Datasheet FDP6030L, FDB6030L Datasheet (Fairchild)

FDP6030L/FDB6030L

FDP6030L/FDB6030L

N-Channel Logic Level PowerTrench MOSFET

August 2003

General Description

This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R

specifications.

DS(ON)

The result is a MOSFET that is easy and safer to drive

Features

• 48 A, 30 V R

• Critical DC electrical parameters specified at

elevated temperature

• High performance trench technology for extremely
low R

DS(ON)

= 13 mΩ @ VGS = 10 V

DS(ON)

R

= 17 mΩ @ VGS = 4.5 V

DS(ON)

(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

It has been optimized for low gate charge, low R

DS(ON)

• 175°C maximum junction temperature rating

and fast switching speed.

D

S

G

G

D

S

TO-220

FDP Series

Absolute Maximum Ratings T

D

S

=25oC unless otherwise noted

A

TO-263AB

FDB Series

G

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 30 V
Gate-Source Voltage

± 20

Drain Current – Continuous (Note 1) 48 A

– Pulsed 150

Total Power Dissipation @ TC = 25°C

Derate above 25°C

52 W

0.3

W/°C

Operating and Storage Junction Temperature Range –65 to +175

V

°C

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDB6030L FDB6030L 13’’ 24mm 800 units
FDP6030L FDP6030L Tube n/a 45

2003 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case 2.9
Thermal Resistance, Junction-to-Ambient 62.5

°C/W

FDP6030L/FDB6030L Rev E(W)

Electrical Characteristics T

FDP6030L/FDB6030L

Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)

E

AS

I

AS

Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSS

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

t

rr

Q

rr

Notes:

1. Calculated continuous current based on maximum allowable junction temperature.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

= 25°C unless otherwise noted

A

Single Pulse Drain-Source

VDD = 15 V, ID = 26 A 100 mJ

Avalanche Energy
Maximum Drain-Source Avalanche

26 A

Current

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage

Gate Threshold Voltage
Gate Threshold Voltage

VGS = ± 20 V, VDS = 0 V ± 100

VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C

Temperature Coefficient
Static Drain–Source On–

Resistance

VGS = 10 V, ID = 26 A
VGS = 4.5 V, ID = 21 A
VGS= 10 V, ID = 26 A, TJ=125°C

30 V

23

mV/°C

1 1.9 3 V

13
17
20

mV/°C

mΩ

–5

7.9

10.2

13.0

µA
nA

On–State Drain Current VGS = 10 V, VDS = 10 V 60 A
Forward Transconductance VDS = 10V, ID = 26 A 68 S

Input Capacitance 1250 pF
Output Capacitance 330 pF
Reverse Transfer Capacitance

Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3

Turn–On Delay Time 11 20 ns
Turn–On Rise Time 12 22 ns

VDS = 15 V, V

GS

= 0 V,

f = 1.0 MHz

VDD = 15V, ID = 1 A,
VGS = 10 V, R

GEN

= 6 Ω

155 pF

Ω

Turn–Off Delay Time 29 46 ns
Turn–Off Fall Time
Total Gate Charge 13 18 nC
Gate–Source Charge 3.9 nC

VDS = 15 V, ID = 26 A,
VGS = 5 V

Gate–Drain Charge

12 21 ns

5.2 nC

Maximum Continuous Drain–Source Diode Forward Current 48 A
Drain–Source Diode Forward

Voltage
Diode Reverse Recovery Time 26 nS
Diode Reverse Recovery Charge

VGS = 0 V, IS = 26 A (Note 1) 0.92 1.3 V
IF = 26 A,

diF/dt = 100 A/µs

15 nC

FDP6030L/FDB6030L Rev E(W)

Typical Characteristics

= 3.5V

FDP6030L/FDB6030L

180

150

120

90

60

, DRAIN CURRENT (A)

D

I

30

0

VGS = 10V

0 1 2 3 4 5

6.0V

5.0V

4.5V

4.0V

3.5V

VDS, DRAIN-SOURCE VOLTAGE (V)

3.0V

1.8
V

GS

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8

0 20 40 60 80 100

4.0V

4.5V

ID, DRAIN CURRENT (A)

5.0V

6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.8

ID = 26A

VGS =10V

1.6

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

0.030

0.025

0.020

0.015

, ON-RESISTANCE (OHM)

DS(ON)

R

TA = 25oC

0.010

0.005
2 4 6 8 10

TA = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

10V

ID = 26A

Figure 3. On-Resistance Variation with

90

VDS = 5V

75

60

45

30

, DRAIN CURRENT (A)

D

I

15

0

1.5 2 2.5 3 3.5 4 4.5

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

Temperature.

TA = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

-55oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

1000

VGS = 0V

100

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

with Source Current and Temperature.

FDP6030L/FDB6030L Rev E(W)

Typical Characteristics

100µs

10µs

0.2

FDP6030L/FDB6030L

10

ID = 26A

8

6

4

, GATE-SOURCE VOLTAGE (V)

2

GS

V

0

0 5 10 15 20 25

Qg, GATE CHARGE (nC)

VDS = 10V

15V

20V

2000

1600

C

1200

800

CAPACITANCE (pF)

400

C

rss

0

0 5 10 15 20 25 30

C

oss

VDS, DRAIN TO SOURCE VOLTAGE (V)

iss

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000

R

LIMIT

DS(ON)

100

10

, DRAIN CURRENT (A)

D

I

VGS = 10V

SINGLE PULSE

R

= 2.9oC/W

θJC

TA = 25oC

DC

1mS

10mS

100mS

1

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

5000

SINGLE PULSE

4000

3000

2000

1000

P(pk), PEAK TRANSIENT POWER (W)

0

0.00001 0.0001 0.001 0.01 0.1 1

t1, TIME (sec)

R

= 2.9°C/W

θJC

TA = 25°C

f = 1MHz
VGS = 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

1

0.1

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

D = 0.5

0.1

0.05

0.02

0.01

SINGLE PULSE

Power Dissipation.

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve

R

(t) = r(t) * R

θJC

R

θJC

θJC

= 2.9 °C/W

P(pk

t

1

t

2

TJ - TA = P * R

Duty Cycle, D = t1 / t

FDP6030L/FDB6030L Rev E(W)

(t)

JC

θ

2

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Advance Information

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In Design

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This datasheet contains the design specifications for
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Rev. I5