Datasheet FDP5645, FDB5645 Datasheet (Fairchild Semiconductor)

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Page 1

FDP5645/FDB5645

60V N-Channel PowerTrench

MOSFET

March 2000

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R

specifications.

DS(ON)

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

• 80 A, 60 V. R

• Critical DC electrical parameters specified at

elevated temperature.

• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient

suppressor.

• High performance trench technology for extremely low R

DS(ON)

= 0.0095 Ω @ VGS = 10 V

DS(ON)

= 0.011 Ω @ VGS = 6 V.

DS(ON)

• 175°C maximum junction temperature rating.

TO-220

FDP Series

Absolute Maximum Ratings T

=25oC unless otherwise noted

TO-263AB

FDB Series

Symbol Parameter FDP5645 FDB5645 Units

DSS

GSS

TJ, T T

STG

Drain-Source Voltage 60 V Gate-Source Voltage

±20

Maximum Drain Current – Continuous (note 3) 80 A

– Pulsed 300

Total Power Dissipation @ TC = 25°C

Derate above 25°C

125 WP

0.83

W/°C Operating and Storage Junction Temperature Range -65 to +175 Maximum lead termperature for soldering purposes,

+275

1/8“ from case for 5 seconds

°C °C

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

 2000 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case 1.2 °C/W Thermal Resistance, Junction-to-Ambient 62.5

°C/W

FDB5645 FDB5645 13” 24mm 800 units FDP5645 FDP5645

note 2

FDP5645/FDB5645 Rev B (W)

Page 2

Electrical Characteristics T

FDP5645/FDB5645

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 1)

DSS

Single Pulse Drain-Source Avalanche Energy

Maximum Drain-Source Avalanche Current

VDD = 40 V, ID = 80 A 800 mJ

80 A

Off Characteristics

DSS

∆BVDSS ∆T

DSS

GSSF

GSSR

Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient

VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C 64 mV/°C

60 V

Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = 20 V, VDS = 0 V –100 nA

µA

On Characteristics (Note 1)

GS(th)

∆VGS( th) ∆T

DS(on)

D(on)

Gate Threshold Voltage Gate Threshold Voltage

Temperature Coefficient

Static Drain–Source On–Resistance

VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C

VGS = 10 V, ID = 40 A VGS=10V, ID = 40 A, TJ=125°C VGS = 6 V, ID = 38 A

2 4 V

-7.8 mV/°C 8

On–State Drain Current VGS = 10 V, VDS = 10 V 60 A Forward Transconductance VDS = 5 V, ID = 40 A 88 S

9.5 18 11

m Ω

Dynamic Characteristics

iss

oss

rss

Input Capacitance 4468 pF Output Capacitance 810 pF Reverse Transfer Capacitance

VDS = 30 V, V f = 1.0 MHz

= 0 V,

198 pF

Switching Characteristics (Note 2)

d(on)

d(off)

Drain–Source Diode Characteristics and Maximum Ratings

Notes:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.

3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A

Turn–On Delay Time 21 30 ns Turn–On Rise Time 13 20 ns

VDD = 30 V, ID = 1 A, VGS = 10 V, R

GEN

= 6 Ω

Turn–Off Delay Time 77 90 ns Turn–Off Fall Time Total Gate Charge 76 107 nC Gate–Source Charge 18 nC

VDS = 30 V, ID = 80 A, VGS = 10 V

Gate–Drain Charge

42 50 ns

21 nC

Maximum Continuous Drain–Source Diode Forward Current 80 A Maximum Pulsed Drain–Source Diode Forward Current 300 A Drain–Source Diode Forward

VGS = 0 V, IS = 40 A 0.9 1.3 V

Voltage

FDP5645/FDB5645 Rev. B (W)

Page 3

Typical Characteristics

FDP5645/FDB5645

100

VGS = 10V

7.0V

, DRAIN-SOURCE CURRENT (A)

0 1 2 3 4 5

6.0V

5.0V

4.5V

4.0V

VDS, DRAIN-SOURCE VOLTAGE (V)

1.8

1.6 VGS = 4.5V

1.4

, NORMALIZED

1.2

DS(ON)

DRAIN-SOURCE ON-RESISTANCE

0.8

0 20 40 60 80 100

5.0V

6.0V

7.0V

ID, DRAIN CURRENT (A)

8.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.2 ID = 42A

VGS = 10V

1.8

1.6

1.4

1.2

, NORMALIZED

DS(ON)

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (oC)

0.024

0.02

0.016

0.012

0.008

, ON-RESISTANCE (OHM)

DS(ON)

0.004

3 4 5 6 7 8 9 10

VGS, GATE TO SOURCE VOLTAGE (V)

TA = 125oC

TA = 25oC

10V

ID = 42A

90 80 70 60 50 40 30

, DRAIN CURRENT (A)

20 10

2 3 4 5 6

Figure 3. On-Resistance Variation

withTemperature.

VDS = 5V

TA = 125oC

VGS, GATE TO SOURCE VOLTAGE (V)

25oC

-55oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP5645/FDB5645 Rev. B (W)

Page 4

Typical Characteristics

FDP5645/FDB5645

ID = 85A

, GATE-SOURCE VOLTAGE (V)

0 10 20 30 40 50 60 70 80

Qg, GATE CHARGE (nC)

VDS =

30V

20V

6000

5000

4000

3000

2000

CAPACITANCE (pF)

1000

0 10 20 30 40 50 60

VDS, DRAIN TO SOURCE VOLTAGE (V)

ISS

OSS

RSS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1000

100

LIMIT

DS(ON)

VGS = 10V

, DRAIN CURRENT (A)

SINGLE PULSE

= 1.2oC/W

TC = 25oC

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

10ms

100ms

1ms

100µs

5000

SINGLE PULSE

4000

3000

2000

POWER (W)

1000

0.01 0.1 1 10 100 1000

SINGLE PULSE TIME (ms)

= 1.2oC/W

θJC

TC = 25oC

f = 1MHz

VGS = 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

r(t), NORMALIZED EFFECTIVE

Power Dissipation.

0.5

D = 0.5

0.3

0.2

0.1

0.05

0.03

0.02

TRANSIENT THERMAL RESISTANCE

0.01

0.05

0.02

0.01 Single Pulse

0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000 t ,TIME (ms)

R (t) = r(t) * R

R = 1.2 °C/W

P(pk)

T - T = P * R (t)

Duty Cycle, D = t / t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDP5645/FDB5645 Rev. B (W)

Page 5

TO-220 Tape and Reel Data and Package Dimensions

TO-220 Tube Packing Configuration: Figure 1.0

45 units per Tube

12 Tubes per Bag

530mm x 130mm x 83mm

2 bags per Box

Conduct ive Plastic Bag

Intermediate box

Packaging Description:

TO-220 parts are ship ped normally in tube. The tu be is made of PVC plas tic treated wi th anti -stati c agent .These tubes in s tandard opt ion are placed in side a di ssipativ e plastic bag, barcode labeled, and placed inside a box made of r ecy cl able cor rug ate d pape r. On e bo x c ont ain s tw o ba gs m ax im um (se e fi g. 1. 0). A nd on e or se ver al o f these boxes are placed ins ide a labeled shipp ing box wh ic h c o m es in d i ff er en t s i zes de pe ndi ng o n th e nu m b er of parts shipped. The other option co mes in bulk as described in the Packagin g In fo rm atio n table. The un it s in this op tion ar e placed inside a s mall box laid w ith antistatic bu bble sheet. These smaller box es are indiv idually labeled and plac ed inside a lar ger box (see fig. 3.0). These larger or int ermediate boxes then w ill be placed finally ins ide a labeled ship ping box whic h st ill co mes in diff erent sizes depending on the number of uni ts shipped.

TO-220 Packaging Information: Figure 2.0

TO-220 Packaging Information

Packaging Option Packaging type

Qty per Tube/Box Box Dimension (mm) Max qty per Box Weight per unit (gm)

Note/Comments

Stan dard

(no fl ow code )

Rail/Tube

530x130x83

1,080

1.4378

S62Z

BULK

114x102x51

1,500

1.4378

TO-220 bulk Packing Configuration: Figure 3.0

FSCINT Label

300 units per

EO70 box

114mm x 102mm x 51mm

TO-220 Tube Configuration: Figure 4.0

Note: All dim ensions are in in ches

9852

NDP4060L

300

EO70 Immediate Box

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

Anti-static

Bubbl e Sheets

5 EO70 boxes per per

Intermedi ate Box

9852

NDP4060L

20.000 +0.031

-0.065

NDP4060L

1080 units maximu m

quantity per box

FSCINT Label

0.123

+0.001

-0.003

9852

NDP4060L

9852

NDP4060L

FSCINT Label sample

D/C1:

530mm x 130mm x 83mm

Intermediate box

FSCINT Label

0.450

9852

NDP4060L

±.030

0.800

FAIRCHILD SEMICONDUCTOR CORPORAT ION

LOT:

CBVK741B019

NSID:

FDP7060

SPEC REV:

D9842

1500 units maximu m

quantity per intermediate box

0.165

0.080

0.275

1.300 ±.015

0.032 ±.003

0.275

QA REV:

0.160

HTB:B

QTY:

1080

SPEC:

(FSCINT)

August 1999, Rev. B

Page 6

TO-220 Tape and Reel Data and Package Dimensions, continued

TO-220 (FS PKG Code 37)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 1.4378

September 1998, Rev. A

Page 7

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions

TO-263AB/D2PAK Packaging Configuration: Figure 1.0

ELECTROSTATIC

SENSITIVE DEVICES

DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS

TNR DATE PT NUMBER PEEL STRENGTH MIN ______________gms

Customized Label

MAX _____________ gms

ESD Label

Moisture Sensitive

Antistatic Cover Tape

CAUTION

Label

F63TNR Label

Static Dissipative

Embossed Car rier Tape

FDB603AL

9835

Packaging Description:

TO-263/D2PAK parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 800 unit s per 13" or 330cm di ameter reel. Th e reels are dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further described in the Packaging Information table.

These full reels are individually barcode labeled, dry packed, and placed inside a standard intermediate box (illus trated in fi gure 1.0) ma de of recycla ble corru gated brown paper. One box contains one reel maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts sh ipped.

FDB603AL

9835

FDB603AL

9835

FDB603AL

9835

TO-263AB/D2PAK Packaging Information

Packaging Option Packaging type

Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel

Note/Comments

Standard

(no flow code)

TNR

13" Dia

359x359x57 530x130x83

1.4378 1.4378

1.6050 -

L86Z

Rail/Tube

800 45

800 1,080

F63TNR Label sample

LOT: CBVK741B019

FSID: FDB6320L

D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN:

QTY: 800

SPEC:

N/F: F (F63TNR)3

TO-263AB/D2PAK Tape Leader and Trailer Configuration: Figure 2.0

TO-263AB/D2PAK Unit Orientation

359mm x 359mm x 57mm

Stand a r d In t e rm ed iate box

ESD Label

Moisture Sensitive

Label

F63TNR Label

DRYPACK Bag

Carrier Tape

Cover Tape

Trailer Tape 400mm minimum or 25 empty pockets

Components

Leader Tape 1520mm minimum or 95 empty pockets

September 1999, Rev. B

Page 8

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued

TO-263AB/D2PAK Embossed Carrier Tape Configuration: Figure 3.0

User Direction of Feed

Dimensions are in millimeter

Pkg ty pe

O263AB/

PAK

(24mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

TO-263AB/D

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

10.60

15.80

24.0

1.55

1.60

1.75

22.25

+/-0.10

+/-0.3

+/-0.05

10 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

PAK Reel Configuration:

+/-0.10

Sketch B (Top View)

Component Rotation

min

11.50 +/-0.10

10 deg maximum

Figure 4.0

W1 Measured at Hub

Dim A

max

Dim N

16.0 +/-0.1

Typical component cavity center line

Typical component center line

Dim A

Max

Dim D

min

4.0 +/-0.1

4.90

0.450 +/-0.150

21.0 +/-0.3

0.9mm maximum

+/-0.10

0.9mm maximum

Sketch C (Top View)

Component lateral movement

B Min

Dim C

0.06 +/-0.02

Tape Size

24mm 13" Dia

Reel

Option

DETAIL AA

13" Diameter Option

See detail AA

W2 max Measured at Hub

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

13.00

0.059

1.5

512 +0.020/-0.008 13 +0.5/-0.2

330

0.795

20.2

4.00 100

0.961 +0.078/-0.000

24.4 +2/0

1.197

30.4

0.941 – 0.1.079

23.9 – 27.4

August 1999, Rev. B

Page 9

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued

TO-263AB/D2PAK (FS PKG Code 45)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 1.4378

August 1998, Rev. A

Page 10

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ CoolFET™ CROSSVOLT™

CMOS

FACT™ FACT Quiet Series™

FAST FASTr™ GTO™ HiSeC™

ISOPLANAR™ MICROWIRE™ POP™ PowerTrench



QFET™ QS™

Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8

SyncFET™ TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. D