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FDP4030L / FDB4030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
March 1998
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process has been especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as DC/DC converters and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
20 A, 30 V. R
R
= 0.035 Ω @ VGS=10 V
DS(ON)
= 0.055 Ω @ VGS=4.5V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings T
Symbol Parameter FDP4030L FDB4030L Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1) 20 A
= 25°C unless otherwise noted
C
- Pulsed (Note 1) 60
P
D
Total Power Dissipation @ TC = 25°C 37.5 W
Derate above 25°C 0.25 W/°C
TJ,T
T
L
THERMAL CHARACTERISTICS
R
JC
θ
R
θJA
© 1998 Fairchild Semiconductor Corporation
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case 4 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
FDP4030L Rev.B1
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Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
OFF CHARACTERISTICS
W
DSS
Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 7 A 50 mJ
I
AR
BV
∆BV
I
DSS
DSS
DSS
Maximum Drain-Source Avalanche Current 7 A
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25oC 33 mV/oC
/∆T
J
Zero Gate Voltage Drain Current VDS = 24 V, V
= 0 V 10 µA
GS
TJ = 125°C 1 mA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 1)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.6 2 V
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25oC -4.1 mV/oC
/∆T
J
Static Drain-Source On-Resistance VGS = 10 V, ID = 10 A 0.025 0.035
TJ = 125°C 0.048 0.06
VGS = 10 V, ID = 4.5 A 0.046 0.055
I
g
D(on)
FS
On-State Drain Current VGS = 10 V, VDS = 10 V 30 A
Forward Transconductance VDS = 10 V, ID = 10 A 11 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 210 pF
f = 1.0 MHz
Reverse Transfer Capacitance 70 pF
365 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 15 V, ID = 10 A,
Turn - On Rise Time 8 15 nS
VGS = 10 V, R
GEN
= 10 Ω
8 15 nS
Turn - Off Delay Time 20 40 nS
Turn - Off Fall Time 10 20 nS
Total Gate Charge V
Gate-Source Charge 2 nC
= 24 V
DS
ID = 10 A, VGS= 10 V
13 18 nC
Gate-Drain Charge 4 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current 20 A
ISM Maximum Pulsed Drain-Source Diode Forward Current 60 A
V
SD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A (Note 1) 1.12 1.3 V
TJ = 125°C 1.08 1.2
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Ω
FDP4030L Rev.B1
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Typical Electrical Characteristics
40
V = 10V
GS
30
20
10
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
6.0V
5.0V
4.5V
4.0V
3.5V
V , DRAIN-SOURCE VOLTAGE (V)
DS
2.5
2
V =4.5V
GS
5.0V
1.5
1
DS(ON)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.5
0 10 20 30 40
5.5V
6.0V
7.0V
I , DRAIN CURRENT (A)
D
8.0V
10V
Figure 1. On-Region Characteristics.
1.8
I = 10A
D
1.6
V = 10V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation
with Temperature.
15
12
9
V = 10V
DS
T = -55°C
J
125°C
25°C
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.16
I = 10A
0.12
0.08
T =125°C
A
0.04
DS(ON)
R , ON-RESISTANCE (OHM)
0
2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
GS
T = 25°C
A
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
V =0V
GS
T = 125°C
1
0.1
J
25°C
-55°C
D
6
D
I , DRAIN CURRENT (A)
3
0
1 1.5 2 2.5 3 3.5 4 4.5 5
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
0.01
0.001
S
I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP4030L Rev.B1
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Typical Electrical Characteristics (continued)
15
I = 10A
D
12
9
6
3
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 4 8 12 16 20
Q , GATE CHARGE (nC)
g
V = 6V
DS
12V
24V
Figure 7. Gate Charge Characteristics.
100
50
DS(ON)
R Limit
20
10
5
V = 10V
GS
SINGLE PULSE
2
D
I , DRAIN CURRENT (A)
1
0.5
0.5 1 3 5 10 20 30 50
o
R = 4 C/W
JC
θ
T = 25 °C
C
V , DRAIN-SOURCE VOLTAGE (V))
DS
100ms
DC
100µs
1ms
10ms
10µs
1000
400
200
100
CAPACITANCE (pF)
f = 1 MHz
V = 0V
GS
40
0.1 0.3 1 4 10 30
V , DRAIN TO SOURCE VOLTAGE (V)
DS
C
C
C
iss
oss
rss
Figure 8. Capacitance Characteristics.
1000
800
600
400
POWER (W)
200
0
0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R = 4°C/W
JC
θ
T = 25°C
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.5
0.2
0.2
0.1
0.1
0.05
Single Pulse
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.05
0.0001 0.001 0.01 0.1 1 10
t ,TIME (sec)
1
R (t) = r(t) * R
JC
θ
R = 4.0 °C/W
JC
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
C
Duty Cycle, D = t /t
θ
θ
JC
1 2
Figure 11. Transient Thermal Response Curve.
JC
FDP4030L Rev.B1
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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