Page 1
FDB3860
N-Channel PowerTrench® MOSFET
100 V, 30 A, 37 mΩ
Features
Max r
High performance trench technology for extremely low r
100% UIL tested
RoHS Compliant
= 37 mΩ at VGS = 10 V, ID = 5.9 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low r
ruggedness for a wide range of switching applications
Applications
DC-AC Conversion
Synchronous Rectifier
March 2009
and low Qg figure of merit, with avalanche
DS(on)
FDB3860 N-Channel PowerTrench
.
®
MOSFET
D
G
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Silicon limited) TC = 25 °C 30
-Pulsed 60
Single Pulse Avalanche Energy (Note 3) 96 mJ
Power Dissipation TC = 25 °C 71
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
TO-263AB
FDB Series
= 25 °C unless otherwise noted
C
= 25 °C (Note 1a) 6.4
A
= 25 °C (Note 1a) 3.1
A
G
D
S
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.75
Thermal Resistance, Junction to Ambient (Note 1a) 40
Package Marking and Ordering Information
A -Continuous T
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDB3860 FDB3860 TO-263AB 330 mm 24 mm 800 units
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
1
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FDB3860 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 100 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 µA, referenced to 25 °C 104 mV/°C
D
= 0 V 1 µA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 2.5 3.8 4.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -11 mV/°C
D
V
= 10 V, ID = 5.9 A 31 37
GS
= 10 V, ID = 5.9 A, TJ = 125 °C 56 67
V
GS
Forward Transconductance VDS = 10 V, ID = 5.9 A 18 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 100 130 pF
Reverse Transfer Capacitance 40 65 pF
Gate Resistance 1.7 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 612ns
Turn-Off Delay Time 17 31 ns
Fall Time 310ns
Total Gate Charge at 10 V
Gate to Source Charge 6.9 nC
Gate to Drain “Miller” Charge 5.4 nC
= 50 V, VGS = 0 V,
V
DS
f = 1 MHz
= 50 V, ID = 5.9 A,
V
DD
V
= 10 V, R
GS
= 50 V, ID = 5.9 A
V
DD
GEN
= 6 Ω
1310 1740 pF
12 22 ns
21 30 nC
mΩ
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
R
θJC
a. 40 °C/W when mounted on a 1 in
b. 62.5 °C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: Starting T
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 37 60 nC
is the sum of the juncti on-t o- cas e a nd cas e-t o -am bi en t th e rma l res ist an ce whe re the ca s e th er ma l ref ere nc e i s de f ine d as the s older mounting surface of the drain pins.
is guaranteed by design while R
= 25 °C, L = 3 mH, IAS = 8 A, VDD = 100 V, VGS = 10 V.
J
is determined by the user’s board design.
θJA
2
pad of 2 oz copper
V
= 0 V, IS = 2.0 A (Note 2) 0.7 1.2
GS
= 0 V, IS = 5.9 A (Note 2) 0.8 1.3
V
GS
= 5.9 A, di/dt = 100 A/µs
I
F
2
35 56 ns
V
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FDB3860 N-Channel PowerTrench
Typical Characteristics T
60
VGS = 10 V
50
40
30
20
DRAIN CURRENT (A)
,
D
I
10
0
012345
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
2.2
2.0
On Region Characteristics Figure 2.
ID = 5.9 A
= 10 V
V
GS
1.8
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
0.4
-75 -50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (
J
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
= 25 °C unless otherwise noted
J
VGS = 8.0 V
VGS = 7.0 V
VGS = 6.5 V
VGS = 6.0 V
o
C)
3.0
VGS = 6.0 V
V
= 6.5 V
GS
VGS = 7.0 V
V
= 8.0 V
GS
V
GS
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0 102030405060
I
,
DRAIN CURRENT (A)
D
NORMALIZED
2.5
2.0
1.5
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
Nor mal ized O n-R esi sta nce
vs Drain Current and Gate Voltage
100
)
Ω
m
80
(
60
DRAIN TO
,
40
DS(on)
r
20
SOURCE ON-RESISTANCE
0
5678910
V
,
GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 5.9 A
TJ = 125 oC
TJ = 25 oC
= 10 V
®
MOSFET
Figure 3. N or malized On Re sistanc e
vs Junction Temperature
60
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
50
V
= 10 V
DS
40
30
TJ = 150 oC
20
, DRAIN CURRENT (A)
D
I
10
0
246810
VGS, GATE TO SOURCE VO LTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
TJ = 25 oC
TJ = -55 oC
Figure 4.
On-Resist ance vs Gate to
Source Voltage
100
V
= 0 V
GS
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 150 oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to D rain Diode
TJ = 25 oC
TJ = -55 oC
Forward Voltage vs Source Current
3
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Page 4
FDB3860 N-Channel PowerTrench
Typical Characteristics T
10
ID = 5.9 A
8
V
6
4
2
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
0 5 10 15 20 25
Figure 7.
Qg, GATE CHARGE (nC)
Gate Charge Characteristics Figure 8.
10
8
6
4
3
2
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100
tAV, TIME IN AVALA NCHE (ms)
= 25 V
DD
TJ = 125 oC
VDD = 50 V
TJ = 25 oC
= 25 °C unless otherwise noted
J
VDD = 75 V
TJ = 100 oC
5000
1000
100
CAPACITANCE (pF)
f = 1 MHz
= 0 V
V
GS
10
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Cap aci t anc e vs Dra in
to Source Voltage
35
28
V
= 10 V
GS
21
14
, DRAIN CURRENT (A)
D
I
7
R
= 1.75 oC/W
θJC
0
25 50 75 100 125 150
T
, CASE TEMPERATURE (
C
o
C)
C
iss
C
oss
C
rss
®
MOSFET
Figure 9.
Unc l amp e d In d uct i ve
Switching Capability
100
10
1
, DRAIN CURRENT (A)
D
I
0.1
0.1 1 10 100 300
THIS AREA IS
LIMITED BY r
SINGLE PULSE
= MAX RATED
T
J
R
θ
JC
= 25 oC
T
C
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
DS(on)
= 1.75 oC/W
100 us
1 ms
10 ms
DC
Figure 10.
Ma ximum Contin uo us Drain
Current vs Case Temperature
5
10
10
10
10
), PEAK TRANSIENT POWER (W)
PK
P(
10
4
3
2
-6
10
Figure 12.
VGS = 10 V
SINGLE PULSE
= 1.75
R
θJC
o
= 25
C
T
C
-5
-4
-3
10
10
t, PULSE WIDTH (sec)
10
-2
10
10
Single P ulse Maximum
o
C/W
-1
1
Power Dissipation
4
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Page 5
FDB3860 N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
θJC
Z
0.1
IMPEDANCE,
0.01
NORMALIZED THERMAL
0.001
θJA
Z
0.1
IMPEDANCE,
0.01
NORMALIZED THERMAL
0.001
0.1
0.05
0.02
0.01
-6
10
10
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
-4
10
-3
10
SINGLE PULSE
R
-5
= 25 °C unless otherwise noted
J
=1.75 oC/W
θJC
-4
10
t, RECTANGULAR PULSE DURATION (sec)
SINGLE PULSE
= 62.5 oC/W
R
θJA
(Note 1b)
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (sec)
P
DM
t
1
t
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
θJC
1/t2
x R
2
+ T
θJc
C
®
-3
10
110
-2
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
100 1000
1
MOSFET
Figure 14.
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
Junction-to-Ambient Transient Thermal Response Curve
5
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Page 6
Preliminary Datasheet
tm
®
tm
tm
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®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I38
6
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