Page 1
tm
FDB3502
B
N-Channel Power Trench® MOSFET
75V, 14A, 47mΩ
Features
Max r
100% UIL Tested
RoHS Compliant
= 47mΩ at VGS = 10V, ID = 6A
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
May 2008
®
process that has
FDB3502 N-Channel Power Trench
Application
Synchronous rectifier
D
D
G
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
Drain to Source Voltage 75 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 14
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 40
Single Pulse Avalanche Energy (Note 3) 54 mJ
Power Dissipation TC = 25°C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
TO-263A
FDB Series
= 25°C unless otherwise noted
C
= 25°C 22
C
= 25°C (Note 1a) 6
A
= 25°C (Note 1a) 3.1
A
G
S
®
MOSFET
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 40
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB3502 FDB3502 TO-263AB 330 mm 24 mm 800 units
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
°C/W
1
www.fairchildsemi.com
Page 2
FDB3502 N-Channel Power Trench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 75 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current VGS = ±20V, V
ID = 250µA, referenced to 25°C 70 mV/°C
= 0V, VDS = 60V, 1 µA
GS
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2.5 3.8 4.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = 10V, ID = 6A 13 S
ID = 250µA, referenced to 25°C -10 mV/°C
VGS = 10V, ID = 6A 37 47
VGS = 10V, ID = 6A, TJ = 125°C 63 80
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 75 105 pF
Reverse Transfer Capacitance 35 40 pF
VDS = 40V, VGS = 0V,
f = 1MHz
615 815 pF
Gate Resistance f = 1MHz 1.5 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 3 10 ns
Turn-Off Delay Time 13 22 ns
VDD = 40V, ID = 6A,
VGS = 10V, R
GEN
= 6Ω
9 17 ns
Fall Time 3 10 ns
Total Gate Charge at 10V
Gate to Source Charge 4 nC
Gate to Drain “Miller” Charge 3 nC
VDD = 40V
ID = 6A
11 15 nC
mΩ
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
1: R
θJA
R
θJC
a. 40°C/W when mounted on a 1 in
b. 62.5°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 75V, VGS = 10V.
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 17 32 nC
is guaranteed by design while R
is determined by the user’s board design.
θJA
2
pad of 2 oz copper
V
= 0V, IS = 2.6A (Note 2) 0.78 1.2
GS
V
= 0V, IS = 6A (Note 2) 0.83 1.3
GS
IF = 6A, di/dt = 100A/µs
2
25 41 ns
V
www.fairchildsemi.com
Page 3
FDB3502 N-Channel Power Trench
Typical Characteristics T
40
35
30
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
Figure 1.
2.0
1.8
1.6
1.4
1.2
NORMALIZED
1.0
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
Figu r e 3. Nor m a lized O n - R esist a n c e
VGS = 10V
VGS = 9V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
012345
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
ID = 6A
V
= 10V
GS
-75 -50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (
J
vs Junction Temperature
= 25°C unless otherwise noted
J
VGS = 8V
VGS = 7V
VGS = 6V
o
C)
3.0
VGS = 6V
VGS = 7V
2.5
VGS = 8V
2.0
V
1.5
NORMALIZED
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0 5 10 15 20 25 30 35 40
I
, DRAIN CURRENT(A)
D
= 9V
GS
V
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
Norma l i z e d O n - Resistance
vs Drain Current and Gate Voltage
150
120
(mΩ)
90
DRAIN TO
,
60
DS(on)
r
30
SOURCE ON-RESISTANCE
0
5678910
V
, GATE TO SO U RCE VOLTAGE (V)
GS
Figure 4.
On-Resista nce vs Gate to
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 6A
TJ = 125oC
TJ = 25oC
Source Voltage
= 10V
®
MOSFET
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
30
V
= 7V
DS
20
10
, DRAIN CURRENT (A)
D
I
0
246810
TJ = 150oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
TJ = 25oC
TJ = -55oC
40
V
= 0V
GS
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 6.
TJ = 150oC
TJ = 25oC
TJ = -55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Dr ai n Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
Page 4
FDB3502 N-Channel Power Trench
Typical Characteristics T
10
ID = 6A
8
V
= 30V
DD
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
V
0
024681012
Figure 7.
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10
Figure 9.
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
Uncl a m p e d I n duct i v e
Switching Capability
= 25°C unless otherwise noted
J
VDD = 40V
VDD = 50V
TJ = 25oC
1000
100
CAPACITANCE (pF)
f = 1MHz
= 0V
V
GS
10
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
to Source Voltage
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
Figure 10.
Limited by Package
R
= 3oC/W
θJC
25 50 75 100 125 150
T
, CASE TEMPERATURE (
C
Ma xim um C ont inu ous Drain
V
o
C)
Current vs Case Temperature
GS
C
iss
C
oss
C
rss
= 10V
®
MOSFET
100
10
, DRAIN CURRENT (A)
D
I
0.1
0.05
1
THIS AREA IS
LIMITED BY r
0.1 1 10 100 300
VDS, DRAIN to SOURCE VOLTAGE (V)
DS(on)
SINGLE PULSE
= MAX RATED
T
J
o
= 3
C/W
R
θJC
o
T
= 25
C
C
Figure 11. Forward Bias Safe
Operating Area
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
4
10
VGS = 10V
3
100us
1ms
10ms
100ms
DC
10
10
), PEAK TRANSIENT POWER (W)
PK
P(
10
2
-5
10
Figure 12.
SINGLE PULSE
o
R
= 3
C/W
θJC
o
= 25
C
T
C
-4
10
-3
10
t, PULSE WIDTH (sec)
10
-2
-1
10
Single Pulse Maximum
1
Power Dissipation
4
www.fairchildsemi.com
Page 5
FDB3502 N-Channel Power Trench
Typical Characteristics T
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
θJC
Z
0.1
IMPEDANCE,
NORMALIZED THERMAL
0.01
10
2
1
θJA
Z
0.1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θJC
-5
10
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
= 25°C unless otherwise noted
J
NOTES:
-2
10
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
= 3oC/W
-4
-3
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
θJc
θJc
C
-1
10
1
®
MOSFET
P
DM
IMPEDANCE,
0.01
NORMALIZED THERMAL
0.001
-4
10
10
-3
SINGLE PULSE
R
= 62.5oC/W
θJA
(Note 1b)
-2
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
110
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
100 1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14.
Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
5
www.fairchildsemi.com
Page 6
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
®
ACEx
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
EfficentMax™
EZSWITCH™ *
™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FlashWriter
®
*
®
* EZSWITCH™ and FlashWriter
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
®
PDP-SPM™
Power-SPM™
PowerTrench
SM
Programmable Active Droop™
QFET
®
®
QS™
Quiet Series™
RapidConfigure™
Saving our world 1mW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
FDB3502 N-Channel Power Trench
®
MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NO TICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE U NDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND TH E TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
Obsolete Not In Production
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
www.fairchildsemi.com
Rev. I34
Loading...