Datasheet FDP2670, FDB2670 Datasheet (Fairchild Semiconductor)

FDP2670/FDB2670

/

200V N-Channel PowerTrench



MOSFET

FDP2670

November 2001

FDB2670

General Description

This N-Channel MOSFET has been designed
specifically for switching on the primary side in the
isolated DC/DC converter application. Any applicat ion
requiring a 200V MOSFETs with low on-resistance and
fast switching will benefit.

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable

specifications.

RDS

(ON)

The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

G

G

D

S

TO-220

FDP Series

Absolute Maximum Ratings T

S

=25oC unless otherwise noted

A

Features

• 19 A, 200 V. R

• Low gate charge (27 nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

D

= 130 mΩ @ VGS = 10 V

DS(ON)

G

D

TO-263AB

FDB Series

S

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns
TJ, T

STG

Drain-Source Voltage 200 V
Gate-Source Voltage
Drain Current – Continuous (Note 1) 19 A

– Pulsed (Note 1) 40 A

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range –65 to +175

± 20

93 W

0.63

W°/C

V

°C

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case 1.6
Thermal Resistance, Junction-to-Ambient 62.5

°C/W
°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDB2670 FDB2670 13’’ 24mm 800 unit s
FDP2670 FDP2670 Tube n/a 45 units

2001 Fairchild Semiconductor Corporation

FDP2670/FDB2670 Rev C1(W)

FDP2670

/

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)

W

DSS

I

AR

Single Pulse Drain-Source
Avalanche Energy

Maximum Drain-Source Avalanche
Current

VDD = 100 V, ID = 10 A

375

10 A

Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

Zero Gate Voltage Drain Current VDS = 160 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

200 V

241

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain–Source

On–Resistance

= VGS, ID = 250 µA

V

DS

I

= 250 µA, Referenced to 25°C

D

VGS = 10 V, ID = 10 A

= 10V, ID = 10 A, TJ = 125°C

V

GS

On–State Drain Current VGS = 10 V, VDS = 10 V 20 A
Forward Transconductance VDS = 10 V, ID = 10 A 24 S

244.5V
–9
98

205

130
285

mV/°C

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1320 pF
Output Capacitance 71 pF
Reverse Transfer Capacitance

= 100 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

24 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 14 25 ns
Turn–On Rise Time 5 10 ns

= 100 V, ID = 1 A,

V

DD

= 10 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 26 41 ns
Turn–Off Fall Time
Total Gate Charge 27 38 nC
Gate–Source Charge 7 nC

V

= 100 V, ID = 10 A,

DS

= 10 V

V

GS

Gate–Drain Charge

23 37 ns

10 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. Calculated continuous current based on maximum allowable junction temperature.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
≤ 3A, di/dt ≤ 100A/µs, VDD ≤ BV

3. I

SD

Maximum Continuous Drain–Source Diode Forward Current 19 A
Drain–Source Diode Forward

Voltage

, Starting TJ = 25°C

DSS

V

= 0 V, IS = 10 A (Note 2) 0.8 1.3 V

GS

FDB2670

mJ

µA

FDP2670/FDB2670 Rev C1(W)

Typical Characteristics

)

E

)

)

A

/

FDP2670

30

VGS = 10V

24

18

12

, DRAIN CURRENT (A

D

I

6

0

0 3 6 9 12 15

7.0V

6.5V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

6.0V

1.5

1.4

1.3

1.2

1.1

, NORMALIZED

DS(ON)

1

R

0.9

DRAIN-SOURCE ON-RESISTANCE

0.8
0 6 12 18 24 30

VGS = 6V

, DRAIN CURRENT (A)

I

D

6.5V

7.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.6
ID =10A

2.2

= 10V

V

GS

1.8

1.4

, NORMALIZED

1

DS(ON)

R

0.6

DRAIN-SOURCE ON-RESISTANC

0.2

-50 -25 0 25 50 75 100 125 150 175

, JUNCTION TEMPERATURE (oC)

T

J

0.35

0.3

0.25

0.2

0.15

, ON-RESISTANCE (OHM)

0.1
TA = 25oC

DS(ON)

R

0.05

0

5678910

V

GS

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

FDB2670

10V

ID = 5A

Figure 3. On-Resistance Variation with

Temperature.

40

VDS = 50V

30

20

TA = 125oC

, DRAIN CURRENT (A

10

D

I

0

3.5 4.5 5.5 6.5 7.5

V

, GATE TO SOURCE VOLTAGE (V)

GS

25oC

-55oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

T

= 125oC

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

I

0.0001

00.20.40.60.811.2

25oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP2670/FDB2670 Rev C1(W)

Typical Characteristics

)

)

/

FDP2670

10

ID = 10A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 5 10 15 20 25 30

, GATE CHARGE (nC)

Q

g

VDS = 50V

100V

75V

2000

C

1500

1000

CAPACITANCE (pF)

500

C

RSS

0

0 25 50 75 100 125 150 175 200

ISS

C

OSS

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

VGS = 10V

1

SINGLE PULSE

, DRAIN CURRENT (A

D

I

= 1.6oC/W

R

θ

JC

T

= 25oC

C

0.1
1 10 100 1000

, DRAIN-SOURCE VO LTAGE (V)

V

DS

DC

100ms

10ms

10us

100us

1ms

2000

SINGLE PULSE

R

= 1.6°C/W

θ

JC

1500

1000

500

P(pk), PEAK TRANSIENT POWER (W)

0

0.00001 0.0001 0.001 0.01 0.1 1

, TIME (sec)

t

1

T

C

f = 1MHz
V

= 25°C

GS

FDB2670

= 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

r(t), NORMALIZED EFFECTIVE

0.1

TRANSIENT THERMAL RESISTANCE

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

R

(t) = r(t) * R

JC

θ

R

= 1.6 °C/W

JC

θ

P(pk

t

1

t

2

T

- TC = P * R

J

Duty Cycle, D = t

JC

θ

(t)

θJC

/ t

1

2

0.00001 0.0001 0.001 0.01 0.1 1

t

, TIME (sec)

1

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.

FDP2670/FDB2670 Rev C1(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4