Datasheet FDB150N10 Datasheet (Fairchild)

tm

FDB150N10

N-Channel PowerTrench® MOSFET

100V, 57A, 15mΩ

FDB150N10 N-Channel PowerTrench

July 2008

Features

•R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

• RoHS compliant

= 12mΩ ( Typ.) @ VGS = 10V, ID = 49A

DS(on)

D

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application

• DC to DC convertors / Synchronous Rectification

D

G

D2-PAK

G

S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 7.5 V/ns P

D

, T

T

J

STG

T

L

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V

Drain Current Drain Current - Pulsed (Note 1) 228 A

Single Pulsed Avalanche Energy (Note 2) 132 mJ

Power Dissipation Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted

C

-Continuous (T

(T

= 25oC) 110 W

C

- Derate above 25

= 25oC) 57 A

C

= 100oC) 40 A

C

o

C0.88W/

S

o

300

o

®

MOSFET

o

C

C C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.13 Thermal Resistance, Junction to Ambient 62.5

o

C/W

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FDB150N10 N-Channel PowerTrench

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDB150N10 FDB150N10 D2-PAK 330mm 24mm 800

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC= 25oC 100 - - V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current VGS = ±20V, V

I

= 250µA, Referenced to 25oC-0.1-V/

D

V

= 100V, V

DS

= 100V, V

V

DS

= 0V - - 1

GS

= 0V, TC = 150oC - - 500

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.5-4.5V Static Drain to Source On Resistance VGS = 10V, ID = 49A - 12 15 mΩ Forward Transconductance VDS = 20V , ID = 49A (Note 4) - 156 - S

Input Capacitance Output Capacitance - 340 450 pF Reverse Transfer Capacitance - 140 210 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

- 3580 4760 pF

µA

o

C

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g(tot) gs gd

Turn-On Delay Time Turn-On Rise Time - 164 338 ns Turn-Off Delay Time - 86 182 ns Turn-Off Fall Time - 83 176 ns Total Gate Charge at 10V Gate to Source Gate Charge - 19 - nC Gate to Drain “Miller” Charge - 15 - nC

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.11mH, I 3: I

≤ 49A, di/dt ≤ 200A/µs, VDD ≤ BV

SD

4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 57 A Maximum Pulsed Drain to Source Diode Forward Current - - 228 A Drain to Source Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge - 70 - nC

= 49A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 50V, ID = 49A

V

DD

V

= 10V, R

GS

(Note 4, 5)

V

= 80V, ID = 49A

DS

V

= 10V

GS

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 25Ω

GEN

= 49A - - 1.3 V

SD

= 49A

SD

- 47 104 ns

-5369nC

-41-ns

FDB150N10 Rev. A

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

500

V

= 15.0 V

GS

10.0 V

8.0 V

7.0 V

100

6.5 V

6.0 V

5.5 V

,Drain Current[A]

D

I

10

*Notes:

1. 250

µs Pulse Test

= 25oC

2. T

2

0.02

0.1 1 10

VDS,Drain-Source Voltage[V]

C

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

30

1000

*Notes:

= 20V

1. V

DS

µs Pulse Test

2. 250

100

150oC

,Drain Current[A]

10

D

I

1

345678

25oC

-55oC

VGS,Gate-Source Voltage[V]

500

FDB150N10 N-Channel PowerTrench

®

MOSFET

25

100

150oC

20

[mΩ],

15

DS(ON)

R

10

Drain-Source On-Resistance

5

0 100 200 300

VGS = 10V

*Note: TC = 25oC

ID, Drain Current [A]

VGS = 20V

25oC

10

, Reverse Drain Current [A]

S

I

1

0.20.40.60.81.01.21.41.6

*Notes:

1. VGS = 0V

µs Pulse Test

2. 250

VSD, Body Diode Forward Voltage [V ]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000

C

iss

4000

3000

2000

Capacitances [pF]

1000

C

oss

C

rss

0

0.1 1 10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

gd

VDS, Drain-Source Voltage [V ]

*Note:

1. V

2. f = 1MHz

gd

= 0V

GS

30

10

VDS = 25V V

= 50V

8

DS

V

= 80V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

*Note: ID = 49A

0

0 102030405060

Qg, Total Ga te C harge [nC]

FDB150N10 Rev. A

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

1.15

2.4

FDB150N10 N-Channel PowerTrench

1.10

1.05

, [Normalized]

1.00

DSS

BV

0.95

Drain-Source Breakdown Voltage

0.90

-100 -50 0 50 100 150 200 TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

D

= 0V

GS

= 250uA

2.0

1.6

, [Normalized]

1.2

DS(on)

R

0.8

Drain-Source On-Resistance

0.4

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

GS

= 49A

D

= 10V

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

500

100

1ms

10

Operation in This Area is Limited by R

1

, Drain Current [A]

D

I

0.1

0.01 1 10 100

VDS, Drain-Source Voltage [V]

DC

DS(on)

10ms

*Notes:

1. T

C

2. T

J

3. Single Pulse

100µs

= 25oC

= 150oC

10µs

200

vs. Case Temperature

70

60

50

40

30

, Drain Current [A]

D

20

I

10

0

25 50 75 100 125 150

TC, Case Temperatur e [oC]

Figure 11. Transient Thermal Response Curve

2

1

]

θJC

0.5

®

MOSFET

FDB150N10 Rev. A

Thermal Response [Z

0.1

0.01

0.2

0.1

0.05

0.02

0.01 Single pulse

-5

10

P

DM

t

1

t

*Notes:

1. Z

θJC

2. Duty Fact or, D= t

3. TJM - TC = PDM * Z

-4

10

-3

10

-2

10

-1

10

2

(t) = 1.13oC/W Max.

1/t2

θJC

(t)

110

Rectangular Pulse Duration [sec]

4

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDB150N10 N-Channel PowerTrench

®

MOSFET

FDB150N10 Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

FDB150N10 N-Channel PowerTrench

®

V

DD

MOSFET

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recoverydv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

FDB150N10 Rev. A

6

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Mechanical Dimensions

FDB150N10 N-Channel PowerTrench

D2-PAK

®

MOSFET

FDB150N10 Rev. A

Dimensions in Millimeters

7

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TRADEMARKS

tm

®

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.

®

ACEx Build it Now™ CorePLUS™ CorePOWER™

CROSSVOLT™

CTL™ Current Transfer Logic™ EcoSPARK

®

EfficentMax™ EZSWITCH™ *

™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter

®

® ®

®

*

* EZSWITCH™ and FlashWriter

FPS™ F-PFS™

®

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

®

PDP-SPM™ Power-SPM™ PowerTrench

SM

Programmable Active Droop™ QFET

®

QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™

®

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™

®

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic

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TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™

®

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

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FDB150N10 N-Channel PowerTrench

®

MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICEN SE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

in the labeling, can be reasonably expected to result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

Obsolete Not In Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I34

FDB150N10 Rev. A

8

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