Datasheet fdb14n30 Datasheet

FDB14N30

D

G

S

G

S

D

D2-PAK

FDB Series

300V N-Channel MOSFET

FDB14N30 300V N-Channel MOSFET

February 2007

TM

UniFET

Features

• 14A, 300V, R

• Low gate charge ( typical 18 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 17 pF)

rss

= 0.29Ω @VGS = 10 V

DS(on)

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Absolute Maximum Ratings

Symbol Parameter FDB14N30 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

T

J, TSTG

T

L

Drain-Source Voltage 300 V

Drain Current - Continuous (TC = 25°C)

Drain Current - Pulsed

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 14 A

Repetitive Avalanche Energy (Note 1) 14 mJ

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

- Continuous (TC = 100°C)

(Note 1)

(Note 2)

- Derate above 25°C

14

8.4

56 A

330 mJ

140

1.12

300 °C

W/°C

A A

W

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θJA*

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

FDB14N30 Rev. A

Thermal Resistance, Junction-to-Case -- 0.89 °C/W

Thermal Resistance, Junction-to-Ambient* -- 40 °C/W

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tap e Width Quantity

FDB14N30 FDB14N30TM D2-PAK 330mm 24mm 800

FDB14N30 300V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

ΔBV / ΔT

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 300 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 300V, VGS = 0V

ID = 250μA, Referenced to 25°C -- 0.3 -- V/°C

VDS = 240V, TC = 125°C

--

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V

Static Drain-Source On-Resistance

Forward Transconductance VDS = 40V, ID = 7A

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 150 195 pF

VGS = 10V, ID = 7A -- 0.24 0.29 Ω

(Note 4)

-- 10.5 -- S

-- 815 1060 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 17 25 pF

Turn-O n Delay Time VDD = 150V, ID = 14A

Turn-O n Rise Time -- 105 120 ns

RG = 25Ω

-- 20 50 ns

Turn-O ff Delay Time -- 30 70 ns

Turn-O ff Fall Time -- 75 160 ns

Total Gate Charge VDS = 240V, ID = 14A

Gate-Source Charge -- 4.5 -- nC

VGS = 10V

Gate-Drain Charge -- 8 -- nC

(Note 4, 5)

-- 18 25 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 14 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 56 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 14A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 14A

Reverse Recovery Charge -- 1.6 -- μC

dIF/dt =100A/μs (Note 4)

-- 235 -- ns

10

1

μA μA

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 2.8mH, IAS = 14A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 14A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDB14N30 Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

10

-1

10

0

10

1

10

-1

10

0

10

1

10

2

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

24681012

10

0

10

1

10

2

150oC

25oC

-55oC

* Notes :

1. V

DS

= 40V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

0 5 10 15 20 25 30 35 40 45

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

R

DS(ON)

[Ω], Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

10

0

10

1

10

2

150oC

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

25oC

I

DR

, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

1000

2000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

VDS, Drain-Source Volt age [V]

0 2 4 6 8 10 12 14 16 18 20

0

2

4

6

8

10

12

VDS = 150V

VDS = 60V

VDS = 240V

* Note : ID = 14A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

FDB14N30 300V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDB14N30 Rev. A

3 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. V

GS

= 10 V

2. I

D

= 7 A

R

DS(ON)

, (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 - 50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

* Notes :

1. V

GS

= 0 V

2. I

D

= 250μA

BV

DSS

, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

10

0

10

1

10

2

10

-2

10

-1

10

0

10

1

10

2

100 ms

1 ms

10 μs

DC

10 ms

100 μs

Operation in This Area is Limited by R

DS(on)

* Notes :

1. T

C

= 25 oC

2. T

J

= 150 oC

3. Single Puls e

I

D

, Drain Current [A]

VDS, Drain- Source Volt age [V]

25 50 75 100 125 150

0

5

10

15

I

D

, Drain Current [A]

TC, Case Temperature [oC]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

* No tes :

1. Z

θJC

(t) = 0.89 oC/W Max.

2. D uty Fa cto r, D =t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z

θJC

(t), Thermal Response

t1, Square Wave Pulse Duration [sec]

t

1

P

DM

t

2

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

* No tes :

1. Z

θJC

(t) = 0.89 oC/W Max.

2. D uty Fa cto r, D =t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z

θJC

(t), Thermal Response

t1, Square Wave Pulse Duration [sec]

t

1

P

DM

t

2

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs . Ca se T em pe ra tu re

FDB14N30 300V N-Channel MOSFET

Figure 11. Transient Thermal Response Curve

FDB14N30 Rev. A

4 www.fairchildsemi.com

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDB14N30 300V N-Channel MOSFET

FDB14N30 Rev. A

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDB14N30 300V N-Channel MOSFET

FDB14N30 Rev. A

6 www.fairchildsemi.com

Mechanical Dimensions

D2-PAK

FDB14N30 300V N-Channel MOSFET

FDB14N30 Rev. A

7 www.fairchildsemi.com

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development. Specifications may change in any manner without notice.

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published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

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