Datasheet FDB082N15A Datasheet (Fairchild)

D

G

S

D2-PAK
FDB Series

G

S

D

FDB082N15A

N-Channel PowerTrench® MOSFET

150V, 105A, 8.2mΩ

April 2011

FDB082N15A N-Channel PowerTrench

Features

• R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

P

D

TJ, T

T

L

*Package limitation current is 120A.

= 6.7mΩ ( Typ.)@ VGS = 10V, ID = 75A

DS(on)

R

DS(on)

= 25oC unless otherwise noted

C

Symbol Parameter Ratings Units

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

- Continuous (TC = 25oC, Silicon Limited) 105

- Continuous (TC = 100oC, Silicon Limited) 75

(TC = 25oC) 231 W

- Derate above 25oC 1.54 W/oC

STG

Drain Current

Drain Current - Pulsed (Note 1) 420 A

Single Pulsed Avalanche Energy (Note 2) 542 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

This N-Channel MOSFET is produced using Fairchild Semi-

conductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Converters

• Synchronous Rectification for Server/Telecom PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

o

300

o

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 0.65

Thermal Resistance, Junction to Ambient 62.5

o

C/W

®

MOSFET

A

C

C

©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. A3

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB082N15A FDB082N15A D2-PAK 330mm 24mm 800

FDB082N15A N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 150 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±20V, V

ID = 250µA, Referenced to 25oC - 0.08 - V/oC

VDS = 120V, V

= 0V - - 1

GS

VDS = 120V, TC = 150oC - - 500

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V

Static Drain to Source On Resistance VGS = 10V, I

= 75A - 6.7 8.20 mΩ

D

Forward Transconductance VDS = 10V, ID = 75A (Note 4) - 139 - S

Dynamic Characteristics

C

C

C

Q

Q

Q

Q

iss

oss

rss

g(tot)

gs

gs2

gd

Input Capacitance

Output Capacitance - 1445 1880 pF

Reverse Transfer Capacitance - 100 - pF

VDS = 25V, VGS = 0V
f = 1MHz

Total Gate Charge at 10V

Gate to Source Gate Charge - 19.1 - nC

Gate Charge Threshold to Plateau - 8.7 - nC

VDS = 75V, ID = 75A
VGS = 10V

Gate to Drain “Miller” Charge - 13.5 - nC

ESR Equivalent Series Resistance(G-S) Drain Open, f = 1MHz - 2.5 - Ω

- 4645 6040 pF

- 64.5 84 nC

µA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 58 126 ns

Turn-Off Delay Time - 61 132 ns

Turn-Off Fall Time - 26 62 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Starting TJ = 25°C, L = 3 mH, ISD = 19 A

3. ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 105 A

Maximum Pulsed Drain to Source Diode Forward Current - - 420 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 268 - nC

, Starting TJ = 25°C

DSS

VDD = 75V, ID = 75A
VGS = 10V, R

= 0V, I

GS

VGS = 0V, I
dIF/dt = 100A/µs

= 4.7Ω

GEN

= 75A - - 1.25 V

SD

= 75A, V

SD

DD

= 120V

- 22 54 ns

- 96 - ns

FDB082N15A Rev. A3

2

www.fairchildsemi.com

Typical Performance Characteristics

2 3 4 5 6

1

10

100

300

-55oC

175oC

*Notes:

1. VDS = 10V

2. 250µs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.1 1 10

10

100

500

*Notes:

1. 250µs Pulse Test

2. TC = 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

V

GS

= 10.0V

8.0V

6.5V

6.0V

5.5V

5.0V

0 100 200 300 400

4

6

8

10

12

14

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.0 0.5 1.0 1.5

1

10

100

500

*Notes:

1. VGS = 0V

2. 250µs Pulse Test

175oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0.1 1 10 30

50

100

1000

10000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. VGS = 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 14 28 42 56 70

0

2

4

6

8

10

*Note: ID = 75A

VDS = 30V
VDS = 75V
VDS = 120V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDB082N15A N-Channel PowerTrench

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

®

MOSFET

FDB082N15A Rev. A3

3

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Typical Performance Characteristics (Continued)

-100 -50 0 50 100 150 200

0.90

0.95

1.00

1.05

1.10

*Notes:

1. VGS = 0V

2. ID = 250µA

BV

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes:

1. VGS = 10V

2. ID = 75A

R

DS(on)

, [Normalized]

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

0.1 1 10 100 300

0.1

1

10

100

1000

10µs

100µs

1ms

10ms

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area
is Limited by R

DS(on)

*Notes:

1. TC = 25oC

2. TJ = 175oC

3. Single Pulse

DC

25 50 75 100 125 150 175

0

20

40

60

80

100

120

I

D

, Drain Current [A]

TC, Case Temperature [oC]

0.001 0.01 0.1 1 10 100 1000

1

10

50

STARTING TJ = 150oC

STARTING TJ = 25oC

I

AS

, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

FDB082N15A N-Channel PowerTrench

®

MOSFET

Figure 11. Unclamped Inductive Switching
Capability

FDB082N15A Rev. A3

4

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Typical Performance Characteristics

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

0.001

0.01

0.1

1

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θJC

(t) = 0.65oC/W Max.

2. Duty Factor, D= t1/t

2

3. TJM - TC = PDM * Z

θJC

(t)

0.5

Single pulse

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

Figure 12. Transient Thermal Response Curve

FDB082N15A N-Channel PowerTrench

P

DM

t

1

t

2

®

MOSFET

FDB082N15A Rev. A3

www.fairchildsemi.com5

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDB082N15A N-Channel PowerTrench

®

MOSFET

FDB082N15A Rev. A3

6

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DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

• ISDcontrolled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

• ISDcontrolled by pulse period

V

DD

L

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

FDB082N15A N-Channel PowerTrench

Peak Diode Recovery dv/dt Test Circuit & Waveforms

®

MOSFET

FDB082N15A Rev. A3

7

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Mechanical Dimensions

D2PAKD2PAK

FDB082N15A N-Channel PowerTrench

®

MOSFET

FDB082N15A Rev. A3

Dimensions in Millimeters

8

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THEREIN, WHICH COVERS THESE PRODUCTS.

FDB082N15A N-Channel PowerTrench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDB082N15A Rev. A3

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

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Rev. I53