Datasheet FDP075N15A, FDB075N15A Datasheet (Fairchild)

July 2011

G

S

D

TO-220

G

D

S

D2-PAK
FDB Series

G

S

D

FDP075N15A_F102 / FDB075N15A

FDP075N15A_F102/FDB075N15A N-Channel PowerTrench

N-Channel PowerTrench® MOSFET

150V, 130A, 7.5mΩ

Features

• R

• Fast Switching

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

= 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A

DS(on)

R

DS(on)

Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Converters

• Synchronous Rectification for Telecommunication PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

MOSFET Maximum Ratings T

Symbol Parameter

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

P

D

TJ, T

STG

T

L

*Package limitation current is 120A.

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current

Drain Current - Pulsed (Note 1) 522 A

Single Pulsed Avalanche Energy (Note 2) 588 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted*

C

FDP075N15A_F102

FDB075N15A

-Continuous (TC = 25oC) 130

-Continuous (TC = 100oC) 92

(TC = 25oC) 333 W

- Derate above 25oC 2.22 W/oC

300

Units

o

o

Thermal Characteristics

Symbol Parameter

R

θJC

R

θJA

Thermal Resistance, Junction to Case 0.45

Thermal Resistance, Junction to Ambient 62.5

FDP075N15A_F102

FDB075N15A

Units

o

C/W

®

MOSFET

A

C

C

©2011 Fairchild Semiconductor Corporation
FDP075N15A_F102 / FDB075N15A Rev. C0

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Description Quantity

FDP075N15A FDP075N15A_F102 TO-220 F102: Trimmed Leads 50

Device Marking Device Package Reel Size Tape Width Quantity

FDB075N15A FDB075N15A D2-PAK 330mm 24mm 800

FDP075N15A_F102/FDB075N15A N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 150 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±20V, V

ID = 250µA, Referenced to 25oC - 0.1 - V/oC

VDS = 120V, V

= 0V - - 1

GS

VDS = 120V, TC = 150oC - - 500

= 0V - - ±100 µA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V

Static Drain to Source On Resistance VGS = 10V, I

Forward Transconductance

VDS = 10V, ID = 100A (Note 4)

= 100A - 6.25 7.5 mΩ

D

- 164 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss(er)

Q

g(tot)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 516 685 pF

Reverse Transfer Capacitance - 21 - pF

VDS = 75V, VGS = 0V
f = 1MHz

Energy Related Output Capacitance VDS = 75V, VGS = 0V - 909 - pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 26 - nC

Gate Charge Threshold to Plateau - 11 - nC

VDS = 75V, ID = 100A
VGS = 10V

Gate to Drain “Miller” Charge - 16 - nC

ESR Equivalent Series Resistance(G-S) Drain Open, f = 1MHz - 2.29 - Ω

- 5525 7350 pF

- 77 100 nC

µA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 37 84 ns

Turn-Off Delay Time - 62 134 ns

Turn-Off Fall Time - 21 52 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Starting TJ = 25°C, L = 3 mH, IAS = 19.8 A

3. ISD ≤ 100 A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Dual Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDP075N15A_F102 / FDB075N15A Rev. C0

Maximum Continuous Drain to Source Diode Forward Current - - 130 A

Maximum Pulsed Drain to Source Diode Forward Current - - 520 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 264 - nC

, Starting TJ = 25°C

DSS

VDD = 75V, ID = 100A
VGS = 10V, R

= 0V, I

GS

VGS = 0V, VDD = 75V, I

= 4.7Ω

GEN

= 100A - - 1.25 V

SD

= 100A

SD

dIF/dt = 100A/µs

2

- 28 66 ns

- 97 - ns

www.fairchildsemi.com

Typical Performance Characteristics

2 3 4 5 6

1

10

100

400

-55oC

175oC

*Notes:

1. VDS = 10V

2. 250µs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.1 1 3

7

10

100

400

*Notes:

1. 250µs Pulse Test

2. TC = 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

V

GS

= 15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

0.0 0.5 1.0 1.5

1

10

100

400

*Notes:

1. VGS = 0V

2. 250µs Pulse Test

175oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 100 200 300 400

4

6

8

10

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.1 1 10 100 200

10

100

1000

10000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. VGS = 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 30 60 90

0

2

4

6

8

10

*Note: ID = 100A

VDS = 30V
VDS = 75V
VDS = 120V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP075N15A_F102/FDB075N15A N-Channel PowerTrench

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP075N15A_F102 / FDB075N15A Rev. C0

®

MOSFET

3

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Typical Performance Characteristics (Continued)

-100 -50 0 50 100 150 200

0.90

0.95

1.00

1.05

1.10

*Notes:

1. VGS = 0V

2. ID = 250µA

BV

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes:

1. VGS = 10V

2. ID = 100A

R

DS(on)

, [Normalized]

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

0.1 1 10 100 300

0.01

0.1

1

10

100

1000

100ms

100µs

1ms

10ms

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area
is Limited by R

DS(on)

*Notes:

1. TC = 25oC

2. TJ = 175oC

3. Single Pulse

DC

25 50 75 100 125 150 175

0

20

40

60

80

100

120

140

VGS = 10V

I

D

, Drain Current [A]

TC, Case Temperature [oC]

Limited by package

R

θJC

= 0.45oC/W

0 25 50 75 100 125 150

0

1

2

3

4

5

6

7

E

OSS

, [µJ]

VDS, Drain to Source Voltage [V]

0.01 0.1 1 10 100 500

1

10

50

If R = 0
tAV = (L)(IAS)/(1.3*Rated BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*Rated BVDSS-VDD)+1]

Starting TJ = 25oC

Starting TJ = 150oC

IAS, Avalanche Current

[

A

]

t

, Time In Avalanche [ms]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

FDP075N15A_F102/FDB075N15A N-Channel PowerTrench

Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive
Switching Capability

FDP075N15A_F102 / FDB075N15A Rev. C0

®

MOSFET

4

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

10

-5

10

-4

10

-3

10

-2

10

-1

1

0.001

0.01

0.1

1

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θJC

(t) = 0.45oC/W Max.

2. Duty Factor, D= t1/t

2

3. TJM - TC = PDM * Z

θJC

(t)

0.5

Single pulse

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

t

1

P

DM

t

2

Figure 13. Transient Thermal Response Curve

FDP075N15A_F102/FDB075N15A N-Channel PowerTrench

FDP075N15A_F102 / FDB075N15A Rev. C0

®

MOSFET

www.fairchildsemi.com5

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP075N15A_F102/FDB075N15A N-Channel PowerTrench

®

MOSFET

FDP075N15A_F102 / FDB075N15A Rev. C0

6

www.fairchildsemi.com

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

• ISDcontrolled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

• ISDcontrolled by pulse period

V

DD

L

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

FDP075N15A_F102/FDB075N15A N-Channel PowerTrench

Peak Diode Recovery dv/dt Test Circuit & Waveforms

®

MOSFET

FDP075N15A_F102 / FDB075N15A Rev. C0

7

www.fairchildsemi.com

Mechanical Dimensions

FDP075N15A_F102/FDB075N15A N-Channel PowerTrench

TO-220

(F102: Trimmed Leads)

Dimensions in Millimeters

®

MOSFET

FDP075N15A_F102 / FDB075N15A Rev. C0

8

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Mechanical Dimensions

D2PAKD2PAK

FDP075N15A_F102/FDB075N15A N-Channel PowerTrench

Dimensions in Millimeters

®

MOSFET

FDP075N15A_F102 / FDB075N15A Rev. C0

www.fairchildsemi.com9

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FDP075N15A_F102/FDB075N15A N-Channel PowerTrench

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDP075N15A_F102 / FDB075N15A Rev. C0

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I55

10

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®

MOSFET