Datasheet FDB047N10 Datasheet (Fairchild)

Download

Page 1

FDB047N10

N-Channel PowerTrench® MOSFET

100V, 164A, 4.7mW

FDB047N10 N-Channel PowerTrench

February 2012

Description

• R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handing capability

• RoHS compliant

= 3.9mW ( Typ.) @ VGS = 10V, ID = 75A

DS(on)

General Description

This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application

• DC to DC converters / Synchronous Rectification

G S

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

DSS

GSS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

TJ, T

STG

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current - Continuous (TC = 25oC, Silicon Limited)

- Continuous (TC = 100oC, Silicon Limited)

- Continuous (TC = 25oC, Package Limited)

Drain Current - Pulsed (Note 1) 656* A

Single Pulsed Avalanche Energy (Note 2) 1153 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +175 Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

D2-PAK

FDB Series

= 25oC unless otherwise noted*

(TC = 25oC) 375 W

- Derate above 25oC 2.5 W/oC

164* A

116* A

120 A

300

Thermal Characteristics

Symbol Parameter Ratings Units

qJC

qJA

Thermal Resistance, Junction to Case 0.4

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper) 62.5

Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper) 40

C/W

MOSFET

www.fairchildsemi.com1

Page 2

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB047N10 FDB047N10 D2-PAK

330mm

24mm 800

FDB047N10 N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV DBV

DSS

GSS

DSS

Drain to Source Breakdown Voltage ID = 250mA, VGS = 0V, TJ = 25oC 100 - - V Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±20V, V

ID = 250mA, Referenced to 25oC - 0.1 - V/oC

VDS = 100V, V

= 0V - - 1

= 0V, TC = 150oC - - 500

= 0V - - ±100 nA

On Characteristics

GS(th)

DS(on)

Gate Threshold Voltage VGS = VDS, ID = 250mA 2.5 3.5 4.5 V

Static Drain to Source On Resistance VGS = 10V, ID = 75A - 3.9 4.7 mW

Forward Transconductance VDS = 10V, ID = 75A (Note 4) - 170 - S

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance - 1120 1500 pF

Reverse Transfer Capacitance - 455 680 pF

VDS = 25V, VGS = 0V f = 1MHz

- 11500 15265 pF

Switching Characteristics

d(on)

d(off)

g(tot)

Turn-On Delay Time

Turn-On Rise Time - 386 782 ns

Turn-Off Delay Time - 344 698 ns

Turn-Off Fall Time - 244 499 ns

Total Gate Charge at 10V

Gate to Source Gate Charge - 56 - nC

Gate to Drain “Miller” Charge - 36 - nC

VDD = 50V, ID = 75A VGS = 10V, R

(Note 4, 5)

GEN

= 25W

VDS = 80V, ID = 75A VGS = 10V

(Note 4, 5)

- 174 358 ns

- 160 210 nC

MOSFET

Drain-Source Diode Characteristics

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25W, Starting TJ = 25°C

3. ISD £ 75A, di/dt £ 200A/ms, VDD £ BV

4. Pulse Test: Pulse width £ 300ms, Duty Cycle £ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDB047N10 Rev. C0

Maximum Continuous Drain to Source Diode Forward Current - - 164* A

Maximum Pulsed Drain to Source Diode Forward Current - - 656 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 245 - nC

, Starting TJ = 25°C

DSS

= 0V, I

VGS = 0V, I

= 75A - - 1.25 V

= 75A

dIF/dt = 100A/ms (Note 4)

- 88 - ns

www.fairchildsemi.com

Page 3

Typical Performance Characteristics

Capacitances [pF]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

300

100

10V

6.5 V

6.0 V

5.5 V

,Drain Current[A]

0.1 1

VDS,Drain-Source Voltage[V]

= 5V

*Notes:

1. 250ms Pulse Test

2. TC = 25oC

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

400

100

175oC

-55oC

25oC

,Drain Current[A]

*Notes:

1. VDS = 20V

2 4 6 8

2. 250ms Pulse Test

VGS,Gate-Source Voltage[V]

300

FDB047N10 N-Channel PowerTrench

MOSFET

100

175oC

[mW],

DS(ON)

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

0 100 200 300 400

*Note: TJ = 25oC

ID, Drain Current [A]

, Reverse Drain Current [A]

0.0 0.5 1.0

VSD, Body Diode Forward Voltage [V]

25oC

*Notes:

1. VGS = 0V

2. 250ms Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

16000

14000

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

iss

= C

rss

12000

10000

8000

oss

6000

4000

2000

0.1 1 10

rss

VDS, Drain-Source Voltage [V]

*Note:

1. VGS = 0V

2. f = 1MHz

VDS = 20V

VDS = 50V VDS = 80V

, Gate-Source Voltage [V]

0 30 60 90 120 150 180

*Note: ID = 75A

Qg, Total Gate Charge [nC]

1.4

FDB047N10 Rev. C0

www.fairchildsemi.com

Page 4

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

1.2

1.1

3.0

2.5

2.0

FDB047N10 N-Channel PowerTrench

1.0

, [Normalized]

DSS

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

*Notes:

1. VGS = 0V

2. ID = 250mA

TJ, Junction Temperature [oC]

1.5

, [Normalized]

1.0

DS(on)

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

*Notes:

1. VGS = 10V

2. ID = 75A

TJ, Junction Temperature [oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

1000

100

10ms

, Drain Current [A] I

Operation in This Area is Limited by R

*Notes:

1. TC = 25oC

2. TJ = 175oC

3. Single Pulse

0.1

0.1 1 10 100

DS(on)

100ms

VDS, Drain-Source Voltage [V]

10ms

100ms

1ms

200

150

100

, Drain Current [A]

Limited by package

25 50 75 100 125 150 175

TC, Case Temperature [oC]

Figure 11. Transient Thermal Response Curve

MOSFET

]

qJC

0.5

0.1

0.2

0.1

0.05

0.02

0.01

Single pulse

Thermal Response [Z

1E-3

-5

-4

-3

-2

Rectangular Pulse Duration [sec]

FDB047N10 Rev. C0

*Notes:

1. Z

(t) = 0.4oC/W Max.

qJC

2. Duty Factor, D= t1/t

3. TJM - TC = PDM * Z

-1

qJC

(t)

www.fairchildsemi.com

Page 5

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDB047N10 N-Channel PowerTrench

MOSFET

FDB047N10 Rev. C0

Unclamped Inductive Switching Test Circuit & Waveforms

www.fairchildsemi.com

Page 6

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

Driver

Same Type

as DUT

• dv/dt controlled by R

• ISDcontrolled by pulse period

FDB047N10 N-Channel PowerTrench

MOSFET

( Driver )

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode

Forward Voltage Drop

di/dt

10V

FDB047N10 Rev. C0

www.fairchildsemi.com

Page 7

Mechanical Dimensions

FDB047N10 N-Channel PowerTrench

D2-PAK

MOSFET

FDB047N10 Rev. C0

Dimensions in Millimeters

www.fairchildsemi.com

Page 8

TRADEMARKS

™

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ Auto-SPM™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™

FlashWriter® * FPS™ F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptiHiT™ OPTOLOGIC OPTOPLANAR

FETBench™

PDP SPM™ Power-SPM™ PowerTrench PowerXS™

Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise The Right Technology for Your Success™

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT®* mSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDB047N10 N-Channel PowerTrench

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDB047N10 Rev. C0

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

www.fairchildsemi.com8

Rev. I55