Datasheet FDB035N10A Datasheet (Fairchild)

tm

FDB035N10A

D

G

S

D2-PAK
FDB Series

G

S

D

N-Channel PowerTrench® MOSFET

100V, 214A, 3.5mΩ

FDB035N10A N-Channel PowerTrench

July 2011

Features

•R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P

D

, T

T

J

T

L

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

= 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A

DS(on)

R

DS(on)

o

= 25

C unless otherwise noted

C

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V

- Continuous (T

Drain Current

- Continuous (T
Drain Current - Pulsed (Note 1) 856 A
Single Pulsed Avalanche Energy (Note 2) 658 mJ

(T

= 25oC) 333 W

C

- Derate above 25

STG

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Converters

• Synchronous Rectification for Server/Telecom PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

= 25oC, Silicon Limited) 214*

C

= 100oC, Silicon Limited) 151*

C

= 25oC, Package Limited) 120

C

o

C2.22W/

300

o

o

®

MOSFET

A- Continuous (T

o

C

C
C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

©2011 Fairchild Semiconductor Corporation
FDB035N10A Rev. A3

Thermal Resistance, Junction to Case 0.45
Thermal Resistance, Junction to Ambient 62.5

o

C/W

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB035N10A FDB035N10A D2-PAK 330mm 24mm 800

FDB035N10A N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 100 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC - 0.07 - V/oC

D

V

= 80V, V

DS

= 80V, TC = 150oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 3.0 3.5 mΩ
Forward Transconductance VDS = 10V , ID = 75A (Note 4) - 167 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gs2

Q

gd

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Input Capacitance
Output Capacitance - 2430 3230 pF
Reverse Transfer Capacitance - 210 - pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V
Gate to Source Gate Charge - 24 - nC
Gate Charge Threshold to Plateau - 8 - nC

= 80V, ID = 75A

V

DS

V

= 10V

GS

Gate to Drain “Miller” Charge - 25 - nC

Turn-On Delay Time

V

= 50V, ID = 75A

Turn-On Rise Time - 54 118 ns
Turn-Off Delay Time - 37 84 ns

DD

V

GS

= 10V, R

GEN

= 4.7Ω

Turn-Off Fall Time - 11 32 ns

ESR Equivalent Series Resistance (G-S) - 1.2 - Ω

- 5485 7295 pF

- 89 116 nC

-2254ns

μA

®

MOSFET

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Starting T

3. I

≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BV

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDB035N10A Rev. A3

Maximum Continuous Drain to Source Diode Forward Current - - 214 A
Maximum Pulsed Drain to Source Diode Forward Current - - 856 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 129 - nC

= 25°C, L = 1mH, IAS = 36.3A

J

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs

F

= 75A - - 1.25 V

SD

= 75A, V

SD

2

DD

= 80V

-72-ns

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Typical Performance Characteristics

0.02 0.1 1 10

2

10

100

600

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

23456

1

10

100

300

-55oC

150oC

*Notes:

1. V

DS

= 10V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.2 0.4 0.6 0.8 1.0 1.2

1

10

100

500

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 60 120 180 240 300 360

0.0025

0.0030

0.0035

0.0040

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0306090

0

2

4

6

8

10

*Note: ID = 75A

VDS = 20V
V

DS

= 50V

V

DS

= 80V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te C h arge [nC]

0.1

110

30

100

5000

10000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MH z

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDB035N10A N-Channel PowerTrench

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

®

MOSFET

FDB035N10A Rev. A3

3

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Typical Performance Characteristics

-100 -50 0 50 100 150 200

0.6

0.9

1.2

1.5

1.8

2.1

*Notes:

1. V

GS

= 10V

2. I

D

= 75A

R

DS(on)

, [Normalized]

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.90

0.95

1.00

1.05

1.10

*Notes:

1. V

GS

= 0V

2. I

D

= 10mA

BV

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

0.1 1 10 100 300

0.1

1

10

100

1000

2000

100us

10us

1ms

10ms

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area
is Limited by R

DS(on)

*Notes:

1. T

C

= 25oC

2. T

J

= 175oC

3. Single Pulse

DC

25 50 75 100 125 150 175

0

50

100

150

200

250

Limited by package

I

D

, Drain Current [A]

TC, Case Temperature [oC]

0.01 0.1 1 10 100 1000

1

10

100

STARTING TJ = 150oC

STARTING TJ = 25oC

I

AS

, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

If R = 0
t

AV = (L)(IAS)/(1.3*RATED BVDSS-VDD)

If R = 0
t

AV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

FDB035N10A N-Channel PowerTrench

®

MOSFET

Figure 11. Unclamped Inductive Switching Capability

FDB035N10A Rev. A3

4

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10

-5

10

-4

10

-3

10

-2

10

-1

1

0.001

0.01

0.1

1

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θJC

(t) = 0.45oC/W Max.

2. Duty Fact or, D= t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

0.5

Single pulse

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

Typical Performance Characteristics

Figure 12. Transient Thermal Response Curve

P

DM

t

1

t

2

FDB035N10A N-Channel PowerTrench

®

MOSFET

FDB035N10A Rev. A3

www.fairchildsemi.com5

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDB035N10A N-Channel PowerTrench

®

MOSFET

FDB035N10A Rev. A3

6

www.fairchildsemi.com

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

LL

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recoverydv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

FDB035N10A N-Channel PowerTrench

Peak Diode Recovery dv/dt Test Circuit & Waveforms

®

MOSFET

FDB035N10A Rev. A3

7

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Mechanical Dimensions

LAND PATTERN RECOMMENDATION

DETAIL A, ROTATED 90

SCALE: 2X

2

SEATING

PLANE

3

4

GAGE PL AN E

1

2

1

4

3

SEE
DETAIL A

10.67

9.65

1.68

1.00

9.65

8.38

1.78 MAX

1.78

1.14

0.99

0.51

5.08

(2.12)

6.22 MIN

6.86 MIN

15.88

14.61

1.65

1.14

4.83

4.06

0.74

0.33

8



0

80

2.79

1.78

(5.38)

0.25 MAX

0.25

0.25 ABM M

-A-

-B-

0.10 B

NOTE S: UN L ESS OTHERW ISE SP EC IF IED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M - 1994.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF TH E PACKAG E).
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
F) FILENAME: TO263A02REV6

12.70

9.45

3.80

1.05

(6.40)

10.00

UNLESS NOTED, ALL DIMS TYPICAL

5.08

FDB035N10A N-Channel PowerTrench

D2-PAK

®

MOSFET

FDB035N10A Rev. A3

8

Dimensions in Millimeters

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FDB035N10A N-Channel PowerTrench

®

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used here in:

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and (c) whose failure to perform when properly used in accordance
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Definition of Terms

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed F ull Production

Obsolete Not In Production

FDB035N10A Rev. A3

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I55

9

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