Datasheet FDB024N06 Datasheet (Fairchild)

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FDB024N06

N-Channel PowerTrench® MOSFET

60V, 265A, 2.4mΩ

FDB024N06 N-Channel PowerTrench

July 2008

Features

•R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

• RoHS compliant

= 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application

• DC to DC convertors / Synchronous Rectification

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

DSS

GSS

dv/dt Peak Diode Recovery dv/dt (Note 3) 3.5 V/ns P

, T

STG

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Drain to Source Voltage 60 V Gate to Source Voltage ±20 V

Drain Current - Continuous (TC = 25oC, Silicon Limited)

- Continuous (T

- Continuous (T Drain Current - Pulsed (Note 1) 1060 A

Single Pulsed Avalanche Energy (Note 2) 2531 mJ

Power Dissipation Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

D2-PAK

FDB Series

= 25

- Derate above 25

C unless otherwise noted

265* A

= 100oC, Silicon Limited)

= 25oC, Package Limited)

= 25oC) 395 W

C2.6W/

190* A

120 A

300

Thermal Characteristics

Symbol Parameter Ratings Units

θJC

θJA

Thermal Resistance, Junction to Case 0.38 Thermal Resistance, Junction to Ambient 62.5

C/W

MOSFET

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FDB024N06 N-Channel PowerTrench

Package Marking and Ordering Information T

= 25oC unless otherwise noted

Device Marking Device Package Reel Size Tape Width Quantity

FDB024N06 FDB024N06 D2-PAK

330mm

24mm 800

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

DSS

∆BV

DSS

∆T

DSS

GSS

On Characteristics

GS(th)

DS(on)

Dynamic Characteristics

iss

oss

rss

g(tot)

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC= 25oC60 - -V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current VGS = ±20V, V

= 250µA, Referenced to 25oC - 0.04 - V/oC

= 60V, V = 60V, V

= 0V - - 1

= 0V, TC = 150oC - - 500

= 0V - - ±100 nA

Gate Threshold Voltage VGS = VDS, ID = 250µA2.53.54.5V Static Drain to Source On Resistance VGS = 10V, ID = 75A - 1.8 2.4 mΩ Forward Transconductance VDS = 10V , ID = 75A (Note 4) - 200 - S

Input Capacitance Output Capacitance - 1610 2140 pF Reverse Transfer Capacitance - 750 1125 pF

= 25V, VGS = 0V

f = 1MHz

Total Gate Charge at 10V

= 48V, ID = 75A

Gate to Source Gate Charge - 54 - nC Gate to Drain “Miller” Charge - 50 - nC

= 10V

(Note 4, 5)

- 11190 14885 pF

- 174 226 nC

µA

MOSFET

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time Turn-On Rise Time - 324 658 ns Turn-Off Delay Time - 348 706 ns Turn-Off Fall Time - 250 510 ns

Drain-Source Diode Characteristics

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.9mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BV 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 265 A Maximum Pulsed Drain to Source Diode Forward Current - - 1060 A Drain to Source Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge - 152 - nC

, Starting TJ = 25°C

DSS

= 30V, ID = 75A

= 10V, R

(Note 4, 5)

= 0V, I

/dt = 100A/µs (Note 4)

= 25Ω

GEN

= 75A - - 1.3 V

= 75A

- 134 278 ns

-69-ns

FDB024N06 Rev. A3

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

700

= 15.0 V

10.0 V

8.0 V

7.0 V

100

6.5 V

6.0 V

5.5 V

5.0 V

,Drain Current[A]

*Notes:

1. 250

µs Pulse Test

= 25oC

2. T

0.01 0.1 1

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

3.0

1000

*Notes:

= 20V

1. V

µs Pulse Test

2. 250

100

,Drain Current[A]

234567

175oC

25oC

-55oC

VGS,Gate-Source Voltage[V]

500

FDB024N06 N-Channel PowerTrench

MOSFET

2.5

VGS = 10V

2.0

[mΩ],

DS(ON)

VGS = 20V

1.5

Drain-Source On-Resistance

1.0 0 100 200 300 400

*Note: TC = 25oC

ID, Drain Current [A]

100

, Reverse Drain Current [A]

0.00.20.40.60.81.01.21.4

175oC

25oC

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

VSD, Body Diode Forward Voltage [V ]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

16000

iss

12000

8000

Capacitances [pF]

4000

oss

rss

0.1 1 10

C C C

VDS, Drain-Source Voltage [V]

*Note:

1. V

2. f = 1MHz

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss rss

= C

= 0V

VDS = 15V V

= 30V

= 48V

, Gate-Source Voltage [V]

*Note: ID = 75A

0 40 80 120 160 200

Qg, Total Ga te C harge [nC]

FDB024N06 Rev. A3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

1.15

2.0

FDB024N06 N-Channel PowerTrench

1.10

1.6

1.05

1.2

, [Normalized]

DS(on)

0.8

Drain-Source On-Resistance

0.4

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

= 75A

, [Normalized]

1.00

DSS

0.95

Drain-Source Breakdown Voltage

0.90

-100 -50 0 50 100 150 200 TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

= 0V

= 10mA

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

1000

10µs

10ms

= 25oC

= 175oC

100µs

1ms

100

Operation in This Area

is Limited by R

, Drain Current [A]

0.1 110100

DS(on)

*Notes:

1. T

2. T

3. Single Pulse

VDS, Drain-Source Voltage [V]

300

250

200

150

Limited by package

100

, Drain Current [A]

25 50 75 100 125 150 175

TC, Case Tempera ture [oC]

Figure 11. Transient Thermal Response Curve

= 10V

MOSFET

FDB024N06 Rev. A3

]

θJC

Thermal Response [Z

0.01

0.005

0.1

0.5

0.2

0.1

0.05

0.02

0.01

Single pulse

-5

*Notes:

1. Z

2. Duty Fact or, D= t

3. TJM - TC = PDM * Z

-4

-3

-2

-1

(t) = 0.38oC/W Max.

θJC

110

1/t2

θJC

(t)

Rectangular Pulse Duration [sec]

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDB024N06 N-Channel PowerTrench

MOSFET

FDB024N06 Rev. A3

Unclamped Inductive Switching Test Circuit & Waveforms

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

Driver

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

FDB024N06 N-Channel PowerTrench

MOSFET

( Driver )

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recoverydv/dt

Body Diode

Forward Voltage Drop

di/dt

10V

FDB024N06 Rev. A3

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Mechanical Dimensions

FDB024N06 N-Channel PowerTrench

D2-PAK

MOSFET

FDB024N06 Rev. A3

Dimensions in Millimeters

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™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter

* EZSWITCH™ and FlashWriter

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I35