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FDB016N04AL7
N-Channel PowerTrench® MOSFET
40V, 306A, 1.6mW
FDB016N04AL7 N-Channel PowerTrench
December 2010
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
= 1.16mW ( Typ.)@ VGS = 10V, ID = 80A
DS(on)
R
DS(on)
D2-PAK-7L
FDB Series with suffix - L7
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
®
MOSFET
D(Pin4, tab)
G
(Pin1)
S(Pin2,3,5,6,7)
MOSFET Maximum Ratings T
Symbol Parameter FDB016N04AL7 Units
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
TJ, T
STG
T
L
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 160A.
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 1) 1224 A
Single Pulsed Avalanche Energy (Note 2) 1350 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted*
C
- Continuous (TC = 25oC, Silicon Limited) 306*
- Continuous (TC = 25oC, Package Limited) 160
(TC = 25oC) 283 W
- Derate above 25oC 1.89 W/oC
300
Thermal Characteristics
Symbol Parameter Ratings Units
R
qJC
R
qJA
©2010 Fairchild Semiconductor Corporation
FDB016N04AL7 Rev. A1
Thermal Resistance, Junction to Case 0.53
Thermal Resistance, Junction to Ambient 62.5
www.fairchildsemi.com1
o
C/W
A- Continuous (TC = 100oC, Silicon Limited) 216*
o
C
o
C
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB016N04A
FDB016N04AL7 D2-PAK-7L 330mm 24mm 800
FDB016N04AL7 N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
DBV
DT
I
DSS
I
GSS
DSS
J
Drain to Source Breakdown Voltage ID = 250mA, VGS = 0V, TC = 25oC 40 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
ID = 250mA, Referenced to 25oC - 0.03 - V/oC
VDS = 32V, V
= 0V - - 10
GS
VDS = 32V, TC = 150oC - - 500
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250mA 1.0 - 3.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 80A - 1.16 1.6 mW
Forward Transconductance VDS = 10V, ID = 80A (Note 4) - 381 - S
Dynamic Characteristics
C
C
C
Q
Q
Q
Q
iss
oss
rss
g(tot)
gs
gs2
gd
Input Capacitance
Output Capacitance - 2035 2710 pF
Reverse Transfer Capacitance - 230 - pF
VDS = 25V, VGS = 0V
f = 1MHz
Total Gate Charge at 10V
Gate to Source Gate Charge - 28 - nC
Gate Charge Threshold to Plateau - 12 - nC
Gate to Drain “Miller” Charge - 17 - nC
VDS = 32V, ID = 80A
VGS = 10V
(Note 4, 5)
- 8715 11600 pF
- 129 167 nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
ESR Equivalent Series Resistance (G-S) - 1.25 - W
Turn-On Delay Time
Turn-On Rise Time - 14 38 ns
Turn-Off Delay Time - 118 246 ns
Turn-Off Fall Time - 33 76 ns
VDD = 20V, ID = 80A
R
= 4.7W, VGS = 10V
GEN
(Note 4, 5)
- 21 52 ns
mA
®
MOSFET
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 30A, VDD = 25V, RG = 25W, Starting TJ = 25°C
3. ISD £ 80A, di/dt £ 200A/ms, VDD £ BV
4. Pulse Test: Pulse width £ 300ms, Duty Cycle £ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDB016N04AL7 Rev. A1
Maximum Continuous Drain to Source Diode Forward Current - - 306 A
Maximum Pulsed Drain to Source Diode Forward Current - - 1224 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 84 - nC
, Starting TJ = 25°C
DSS
= 0V, I
GS
VGS = 0V, I
dIF/dt = 100A/ms (Note 4)
= 80A - - 1.3 V
SD
= 80A
SD
2
- 68 - ns
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Page 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
500
V
= 10.0 V
GS
8.0 V
7.0 V
6.0 V
5.0 V
100
,Drain Current[A]
D
I
10
0.01 0.1 1 10
4.5 V
4.0 V
3.5 V
3.0 V
*Notes:
1. 250ms Pulse Test
2. TC = 25oC
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
1.4
1000
*Notes:
1. VDS = 20V
2. 250ms Pulse Test
100
175oC
,Drain Current[A]
10
D
I
1
1 2 3 4
25oC
-55oC
VGS,Gate-Source Voltage[V]
300
FDB016N04AL7 N-Channel PowerTrench
®
MOSFET
1.3
VGS = 10V
[W],
1.2
DS(ON)
R
1.1
VGS = 20V
Drain-Source On-Resistance
*Notes: TC = 25oC
1.0
0 50 100 150 200 250 300 350
ID, Drain Current [A]
10
, Reverse Drain Current [A]
S
I
175oC
25oC
*Notes:
1. VGS = 0V
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
2. 250ms Pulse Test
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
100
100
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
rss
= C
gd
gd
10
1
Capacitances [pF]
*Notes:
1. VGS = 0V
0.1
0.1 1 10 30
2. f = 1MHz
VDS, Drain-Source Voltage [V]
C
iss
C
oss
C
rss
10
8
VDS = 8V
VDS = 20V
VDS = 32V
6
4
, Gate-Source Voltage [V]
GS
V
2
*Notes: ID = 80A
0
0 30 60 90 120 150
Qg, Total Gate Charge [nC]
FDB016N04AL7 Rev. A1
3
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Page 4
Typical Performance Characteristics (Continued)
10000
t
, TIME IN AVALANCHE(ms)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs.
vs. Temperature Temperature
1.2
2.00
FDB016N04AL7 N-Channel PowerTrench
1.1
1.75
1.50
1.0
, [Normalized]
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
*Notes:
1. VGS = 0V
2. ID = 1mA
TJ, Junction Temperature [oC]
1.25
, [Normalized]
1.00
DS(on)
R
Drain-Source On-Resistance
0.75
0.50
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
*Notes:
1. VGS = 10V
2. ID = 80A
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs.
Case Temperature
3000
1000
100
Operation in This Area
10
is Limited by R
, Drain Current [A]
D
I
1
0.1
0.1 1 10 100 200
DS(on)
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
VDS, Drain-Source Voltage [V]
100ms
1ms
10ms
100ms
DC
350
300
250
200
150
, Drain Current [A]
100
D
I
Limited by package
50
0
25 50 75 100 125 150 175
TC, Case Temperature [oC]
Figure 11. Unclamped Inductive
Switching Capability
1000
If R = 0
tAV = (L)(IAS)/(1.3*RATED BV
If R
¹
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV
DSS
- VDD)
DSS
- VDD) +1]
®
MOSFET
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
, AVALANCHE CURRENT(A)
AS
I
1
0.0001 0.01 1 100
FDB016N04AL7 Rev. A1
4
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Page 5
Figure 12. Transient Thermal Response Curve
1
FDB016N04AL7 N-Channel PowerTrench
]
qJC
Thermal Response [Z
0.1
0.01
0.001
0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
-5
10
10
P
DM
t
1
t
*Notes:
1. Z
qJC
2. Duty Factor, D= t1/t
3. TJM - TC = PDM * Z
-4
-3
10
10
-2
-1
10
2
(t) = 0.53oC/W Max.
qJC
2
(t)
1 10
Rectangular Pulse Duration [sec]
®
MOSFET
FDB016N04AL7 Rev. A1
www.fairchildsemi.com5
Page 6
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FDB016N04AL7 N-Channel PowerTrench
®
MOSFET
FDB016N04AL7 Rev. A1
Unclamped Inductive Switching Test Circuit & Waveforms
6
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Page 7
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
DUT
I
I
SD
SD
Driver
Driver
R
R
G
G
V
V
GS
GS
+
V
V
DS
DS
_
_
L
LL
Same Type
Same Type
as DUT
as DUT
• dv/dt controlled by R
• dv/dt controlled by R
• ISDcontrolled by pulse period
• ISDcontrolled by pulse period
G
G
FDB016N04AL7 N-Channel PowerTrench
V
V
DD
DD
®
MOSFET
V
V
GS
GS
( Driver )
( Driver )
I
I
SD
SD
( DUT )
( DUT )
V
V
DS
DS
( DUT )
( DUT )
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
--------------------------
--------------------------
--------------------------
D =
D =
D =
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
IFM, Body Diode Forward Current
IFM, Body Diode Forward Current
I
I
RM
RM
Body Diode Reverse Current
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
V
V
SD
SD
Body Diode
Body Diode
Forward Voltage Drop
Forward Voltage Drop
di/dt
di/dt
10V
10V
V
V
DD
DD
FDB016N04AL7 Rev. A1
7
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Page 8
Mechanical Dimensions
FDB016N04AL7 N-Channel PowerTrench
D2PAK-7L
®
MOSFET
FDB016N04AL7 Rev. A1
Dimensions in Millimeters
8
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Page 9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
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CorePLUS™
CorePOWER™
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CTL™
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DEUXPEED
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EfficentMax™
®
®
ESBC™
®
®
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®
FACT
®
FAST
FastvCore™
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FlashWriter® *
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®
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®
FRFET
Global Power Resource
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Gmax™
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ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
Power-SPM™
®
®
®
SM
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®*
®
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™
®
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®
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®
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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDB016N04AL7 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDB016N04AL7 Rev. A1
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I51
9
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