Page 1
March 2008
FDA8440 N-Channel PowerTrench
FDA8440
N-Channel PowerTrench
40V, 100A, 2.1mΩ
Features
•R
•Q
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single P
• 160A Guarantee for 2 sec
•RoHS Compliant
= 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A
DS(on)
= 345nC (Typ.)@ VGS = 10V
g(tot)
ulse and Re
petitive Pulse)
®
MOSFET
Application
• Automotive Engine Control
• Powertrain Management
• Motors, Solenoids
• Electronic Steering
• Integrated Starter/ Alternator
• Distributed Power Architectures and VRMs
• Primary Switch for 12V systems
tm
®
MOSFET
D
G
TO-3PN
GSD
MOSFET Maximum Ratings
TC = 25oC unless otherwise noted
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
E
AS
P
D
T
J, TSTG
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current
- Continuous (T
- Continuous (T
- Pulsed
Single Pulsed Avalanche Energy (Note 1) 1682 mJ
Power dissipation 306 W
Derate above 25
Operating and Storage Temperature -55 to +175
= 155oC)
C
= 25oC, VGS = 10V, R
A
o
C 2.04 W/oC
= 40oC/W )
θJA
100
30
500
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 0.49
Thermal Resistance, Junction to Ambient (Note 2) 40
o
C/W
o
C/W
A
A
A
o
C
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDA8440 Rev. A2
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape W idth Quantity
FDA8440 FDA8440 TO-3PN N/A N/A 30units
FDA8440 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(tot)
Q
g(2)
Q
gs
Q
gs2
Q
gd
Switching Characteristics
t
ON
t
d(on)
t
r
t
d(off)
t
f
t
OFF
Drain-Source Diode Characteristics and Maximum Ratings
V
SD
t
rr
Q
RR
Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA 40 -- -- V
Zero Gate Voltage Drain Current
V
= 32V
DS
= 0 V
V
GS
= 150oC -- -- 250 μA
T
C
-- -- 1 μA
Gate to Body Leakage Current VGS = ±20V -- -- ±100 nA
Gate to Source Threshold Voltage VDS = VGS, ID = 250μA 1 -- 3 V
V
= 4.5V, ID = 80A -- 1.56 2.2
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance -- 1840 2450 pF
Reverse Transfer Capacitance -- 1400 2100 pF
GS
V
= 10V, ID = 80A -- 1.46 2.1
GS
= 10V, ID = 80A,
V
GS
= 175oC
T
C
-- 2.82 4.1
-- 18600 24740 pF
V
= 25V, VGS = 0V,
DS
f = 1.0MHz
mΩ
Gate Resistance VGS = 0.5V, f = 1MHz -- 1.1 -- Ω
Total Gate Charge at 10V VGS = 0V to 10V
= 20V
Threshold Gate Charge VGS = 0V to 2V -- 32.5 -- nC
Gate to Source Gate Charge -- 49 -- nC
Gate Charge Threshold to Plateau -- 16.5 -- nC
V
DD
I
= 80A
D
= 1.0mA
I
g
-- 345 450 nC
Gate to Drain “Miller” Charge -- 74 -- nC
(V
= 10V)
GS
Turn-On Time
Turn-On Dela y Time -- 43 95 ns
Rise Time -- 130 275 ns
= 20V,ID = 80A
V
DD
V
GS
= 10V, R
GEN
= 7Ω
-- 175 360 ns
Turn-Off Delay Time -- 435 875 ns
Fall Time -- 290 590 ns
Turn-Off Ti me -- 730 1470 ns
I
= 80A -- -- 1.25 V
Source to Drain Diode Voltage
SD
= 40A -- -- 1.0 V
I
SD
Reverse Recovery Time ISD = 75A, dISD/dt = 100A/μs -- 59 -- ns
Reverse Recovery Charge ISD = 75A, dISD/dt = 100A/μs -- 77 -- nC
®
MOSFET
NOTES:
1: Starting T
2: Pulse width = 100s
= 25°C, L = 1mH, IAS = 58A, VDD = 36V, VGS = 10V.
J
FDA8440 Rev. A2
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
0246
1
10
100
-55oC
150oC
* Notes :
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
400
0.1 1
1
10
100
0.4
* Notes :
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 10.0 V
7.0 V
5.0 V
3.5 V
3.0 V
2.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
0.04
400
0.3 0.6 0.9 1.2
1
10
100
1000
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
Notes:
1. V
GS
= 0V
2. 250
μs Pulse Test
0 50 100 150 200 250
1.45
1.50
1.55
1.60
* Note : TJ = 25oC
VGS = 4.5V
VGS = 10V
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
ID, Drain Current [A]
10
-1
10
0
10
1
0
6000
12000
18000
24000
30000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
20
0 100 200 300 400
0
2
4
6
8
10
* Note : ID = 80A
VDS = 25V
V
DS
= 20V
V
DS
= 15V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Vol
and Temperatue
ge Variation vs. Source Current
ta
FDA8440 N-Channel PowerTrench
®
MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDA8440 Rev. A2
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
FDA8440 N-Channel PowerTrench
Figure 7. Breakdown Voltage Variation Figure 8.
vs. Temperature
1.2
1.1
1.0
, [Normalized]
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
* Notes :
1. V
GS
2. I
D
= 0V
= 250μA
TJ, Junction Temperature [oC]
vs. Temperature
, [Normalized]
DS(on)
r
Figure 9. Unclamped Inductive Switching
Capability
200
100
TJ = 25oC
On-Resistance Variation
2.5
2.0
1.5
1.0
0.5
Drain-Source On-Resistance
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
* Notes :
1. V
GS
2. I
= 80A
D
= 10V
Figure 10. Safe Operating Area
5000
1000
100μs
100
®
MOSFET
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100 1000 10000
TJ = 150oC
tAV, TIME IN AVALANCHE(ms)
Figure 11. Transient Thermal Response Curve
1
]
0.5
θJC
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
Thermal Response [Z
0.001
-5
10
Operation in This Area
10
is Limited by R
, Drain Current [A]
D
I
1
0.1
110
DS(on)
* Notes :
= 25oC
1. T
C
2. T
= 175oC
J
3. Single Pulse
VDS, Drain-Source Voltage [V]
1ms
10ms
100ms
50
P
DM
t
1
t
2
* Notes :
(t) = 0.49oC/W Max.
1. Z
θJC
2. Duty Factor, D=t
3. TJM - TC = PDM * Z
-4
10
-3
10
-2
10
1/t2
θJC
-1
10
Rectangular Pulse Duration [sec]
(t)
0
10
FDA8440 Rev. A2
4 www.fairchildsemi.com
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA8440 N-Channel PowerTrench
®
MOSFET
FDA8440 Rev. A2
5 www.fairchildsemi.com
Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDA8440 N-Channel PowerTrench
®
MOSFET
FDA8440 Rev. A2
6 www.fairchildsemi.com
Page 7
Mechanical Dimensions
FDA8440 N-Channel PowerTrench
TO-3PN
®
MOSFET
FDA8440 Rev. A2
Dimensions in Millimeters
7 www.fairchildsemi.com
Page 8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is
not intended to be an exhaustive list of all such trademarks.
Build it Now™
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CorePOWER™
CROSSVOLT™
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EcoSPARK
EfficentMax™
EZSWITCH™ *
™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
®
®
tm
®
®
®
®
*
®
* EZSWITCH™ and FlashWriter
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
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GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
®
tm
SM
®
PDP SPM™
Power-SPM™
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QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
®
®
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
tm
®
®
®
FDA8440 N-Channel PowerTrench
®
MOSFET
DISCLAIMER
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THEREIN, WHICH COVERS THESE PRODUCTS.
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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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.
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Definition of Terms
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Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
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8 www.fairchildsemi.com
FDA8440 Rev. A2
Rev. I35
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