Datasheet FDA70N20 Datasheet (Fairchild)

FDA70N20

200V N-Channel MOSFET

FDA70N20 200V N-Channel MOSFET

TM

UniFET

Features

• 70A, 200V, R

• Low gate charge ( typical 66 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 89 pF)

rss

= 0.035Ω @VGS = 10 V

DS(on)

GSD

TO-3PN

FDA Series

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

{

z





z

{

G

z z

z

{

S

Absolute Maximum Ratings

Symbol Parameter FDA70N20 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

Drain-Source Voltage 200 V

Drain Current - Continuous (TC = 25°C)

- Continuous (T

Drain Current - Pulsed

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 70 A

Repetitive Avalanche Energy (Note 1) 41.7 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

70 45

280 A

1742 mJ

417

3.3

300 °C

A A

W

W/°C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

FDA70N20 Rev. A

Thermal Resistance, Junction-to-Case -- 0.3 °C/W

Thermal Resistance, Case-to-Sink 0.24 -- °C/W

Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA70N20 FDA70N20 TO-3PN - - 30

FDA70N20 200V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV / ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 200 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.2--V/°C

D

= 160V, TC = 125°C

V

DS

--

1

10

µA µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V

Static Drain-Source On-Resistance

Forward Transconductance VDS = 40V, ID = 35A

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 750 980 pF

= 10V, ID = 35A -- 0.029 0.035 Ω

V

GS

(Note 4)

-- 47 -- S

-- 3050 3970 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 89 130 pF

Turn-O n Delay Time VDD = 100V, ID = 70A

= 25Ω

R

Turn-On Rise Time -- 235 480 ns

G

-- 71 150 ns

Turn-Off Delay Time -- 65 140 ns

Turn-Off Fall Time -- 39 88 ns

Total Gate Charge VDS = 160V, ID = 70A

V

= 10V

Gate-Source Charge -- 19 -- nC

GS

Gate-Drain Charge -- 26 -- nC

(Note 4, 5)

-- 66 86 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 70 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 280 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 70A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 70A

/dt =100A/µs (Note 4)

dI

Reverse Recovery Charge -- 4.1 -- µC

F

-- 175 -- ns

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.533mH, IAS = 70A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 70A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDA70N20 Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

FDA70N20 200V N-Channel MOSFET

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

, Drain Current [A] I

2

10

1

10

D

0

10

V Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V Bottom : 6.0 V

-1

GS

0

10

VDS, Drain-Source Voltage [V]

2

10

150oC

Notes :※

1. 250µ s Pulse Test

2. T

= 25℃

C

1

10

1

10

, Drain Current [A]

D

I

0

10

24681012

25oC

VGS, Gate-Source Voltage [V]

-55oC

Notes :※

1. VDS = 40V

2. 250µ s Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.06

0.05

VGS = 10V

0.04

VGS = 20V

[Ω ],Drain-Source On-Resistance

0.03

DS(ON)

R

0 25 50 75 100 125 150 175 200

Note : T※J = 25℃

ID, Drain Current [A]

2

10

1

10

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1. 6 1.8

150℃

VSD, Source-Drain voltage [V]

25℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

8000

6000

4000

Capacitances [pF]

2000

0

-1

10

FDA70N20 Rev. A

C

oss

C

iss

C

rss

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

Note ;※

1. VGS = 0 V

2. f = 1 MHz

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 10203040506070

VDS = 40V

VDS = 100V

VDS = 160V

Note : I※D = 70A

QG, Total Gate Charge [nC]

3 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

1.1

3.0

2.5

2.0

FDA70N20 200V N-Channel MOSFET

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

Notes :※

1. VGS = 0 V

2. I

TJ, Junction Temperature [oC]

= 250 µ A

D

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

? Notes :

1. V

GS

2. I

= 35 A

D

= 10 V

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature

, Drain Current [A]

D

I

3

10

2

10

1

10

Operation in This Area is Limited by R

0

10

-1

10

-2

10

0

10

1 ms

10 ms

100 ms

DC

DS(on)

? Notes :

1. T

C

2. T

J

3. Single Puls e

1

10

VDS, Drain-Source Voltage [V]

100 µs

= 25 oC

= 150 oC

10

80

10 µs

2

70

60

50

40

30

, Drain Current [A]

D

I

20

10

0

25 50 75 100 125 150

TC, Case Temperature [ ]℃

Figure 11. Transient Thermal Response Curve

D=0.5

-1

10

0.2

0.1

(t), Thermal Response

Z

FDA70N20 Rev. A

0.05

0.02

θ JC

-2

10

0.01

-5

10

-4

10

single pulse

t1, Square Wave Pulse Duration [sec]

P

DM

t

1

t

2

No tes :※

1. Z

(t) = 0.3 /W Max.℃

θ JC

2. D uty Fa ctor , D =t1/t

3. TJM - TC = PDM * Z

-3

10

-2

10

-1

10

2

(t)

θ JC

0

10

1

10

4 www.fairchildsemi.com

12V

200nF

3mA

50KΩ

V

Gate Charge Test Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

10V

Resistive Switching Test Circuit & Waveforms

FDA70N20 200V N-Channel MOSFET

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off )

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

AS

2

AS

I

(t)

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

FDA70N20 Rev. A

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

FDA70N20 200V N-Channel MOSFET

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

FDA70N20 Rev. A

6 www.fairchildsemi.com

Mechanical Dimensions

FDA70N20 200V N-Channel MOSFET

TO-3PN

FDA70N20 Rev. A

Dimensions in Millimeters

7 www.fairchildsemi.com

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FDA70N20 200V N-Channel MOSFET

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

8 www.fairchildsemi.com

FDA70N20 Rev. A

Rev. I14