Datasheet FDA59N30 Datasheet (Fairchild)

FDA59N30

300V N-Channel MOSFET

FDA59N30 300V N-Channel MOSFET

TM

UniFET

Features

• 59A, 300V, R

• Low gate charge ( typical 77 nC)

• Low C

( typical 80 pF)

rss

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.056Ω @V

DS(on)

GS

= 10 V

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

!

"

!

"

" "

"

!

S

GSD

TO-3PN

FDA Series

!

G

Absolute Maximum Ratings

Symbol Parameter FDA59N30 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

Drain-Source Voltage 300 V

Drain Current - Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

59 35

236 A

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (T

= 25°C)

C

- Derate above 25°C

(Note 2)

(Note 1)

(Note 3)

1734 mJ

59 A

50 mJ

4.5 V/ns

500

4

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

300 °C

A A

W

W/°C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

FDA59N30 Rev. A

Thermal Resistance, Junction-to-Case -- 0.25 °C/W Thermal Resistance, Case-to-Sink 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W

1

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA59N30 FDA59N30 TO-3PN - - 30

FDA59N30 300V N-Channel MOSFET

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV / ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage VGS = 0V, I

Breakdown Voltage Temperature

DSS

J

Coefficient

= 250µA, Referenced to 25°C--0.3--V/°C

I

D

Zero Gate Voltage Drain Current VDS = 300V, VGS = 0V

V

DS

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VDS = VGS, I

Static Drain-Source On-Resistance

V

GS

Forward Transconductance VDS = 40V, ID = 29.5A

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 710 920 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 80 120 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time VDD = 150V, ID = 59A

= 25Ω

R

Turn-On Rise Time -- 575 1160 ns

G

Turn-Off Delay Time -- 120 250 ns

Turn-Off Fall Time -- 200 410 ns

Total Gate Charge VDS = 240V, ID = 59A

V

Gate-Source Charge -- 22 -- nC

GS

Gate-Drain Charge -- 40 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Maximum Continuous Drain-Source Diode Forward Current -- -- 59 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 236 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 59A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 59A

/dt =100A/µs

dI

Reverse Recovery Charge -- 6.9 -- µC

F

= 250µA 300 -- -- V

D

= 240V, T

= 10V, I

--

= 125°C

C

= 250µA3.0--5.0V

D

= 29.5A -- 0.047 0.056 Ω

D

(Note 4)

--

-- 52 -- S

--

-- 3590 4670 pF

-- 140 290 ns

(Note 4, 5)

-- 77 100 nC

= 10V

(Note 4, 5)

-- 246 -- ns

(Note 4)

10

1

µA µA

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.83mH, IAS = 59A, VDD = 50V, R

3. I

≤ 59A, di/dt ≤ 200A/µs, VDD ≤ BV

SD

4. Pulse Test: Pulse width ≤ 300 µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

= 25Ω, Starting TJ = 25°C

G

, Starting T

DSS

= 25°C

J

FDA59N30 Rev. A

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDA59N30 300V N-Channel MOSFET

2

10

1

10

, Drain Current [A]

D

I

0

10

V Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

-1

GS

0

10

VDS, Drain-Source Voltage [ V]

2

10

Notes :

※

1. 250µ s Pulse Test

2. T

= 25

℃

C

1

10

1

10

, Drain Current [A]

D

I

0

10

24681012

150oC

25oC

VGS, Gate-Source Voltage [V]

-55oC

※

1. VDS = 40V

2. 250µ s Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.12

0.11

0.10

0.09

[Ω ],

0.08

DS(ON)

R

0.07

0.06

Drain-Source On-Resistance

0.05

0.04 0 25 50 75 100 125 150 175

VGS = 10V

ID, Drain Current [A]

※

VGS = 20V

Note : T

2

10

= 25

℃

J

1

10

, Reverse Dr ain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

150

℃

VSD, Source-Drain voltage [V]

25

℃

Notes :

※

1. VGS = 0V

2. 250µ s Pul se Test

Notes :

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

9000

6000

3000

Capacitances [pF]

FDA59N30 Rev. A

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

oss

C

iss

Note ;

※

10

1

1. VGS = 0 V

2. f = 1 MHz

C

rss

0

-1

10

0

10

VDS, Drain-Source Voltage [V]

12

10

8

VDS = 60V

VDS = 150V

VDS = 240V

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050607080

QG, Total Gate Charge [nC]

3

※

Note : I

= 59A

D

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FDA59N30 300V N-Channel MOSFET

Typical Performance Characteristics

(Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltag e

0.8

-100 -50 0 50 100 150 200

Notes :

※

1. VGS = 0 V

2. I

TJ, Juncti on Temperature [oC]

= 250 µ A

D

3.0

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

Drain-Source On-Resistance

0.5

0.0

-100 - 50 0 50 100 150 200

TJ, Junction Temperature [oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

3

10

2

10

1

10

0

10

, Drain Current [A]

D

I

-1

10

-2

10

0

Operation in Thi s Area is Limited by R

10 ms

100 ms

DC

DS(on)

Notes :

※

1. TC = 25 oC

2. T

J

3. Single Pul se

1

10

VDS, Drain-Source Voltage [V]

1 ms

= 150 oC

10

2

100 µs

10 µs

70

60

50

40

30

, Drain Current [A]

20

D

I

10

0

25 50 75 100 125 150

TC, Case Temperature [ ]

℃

Notes :

※

1. VGS = 10 V

2. I

= 29.5 A

D

Figure 11. Transient Thermal Response Curve

D=0.5

-1

10

0.2

FDA59N30 Rev. A

0.1

0.05

-2

0.02

10

0.01

(t), Thermal Response

θ JC

Z

10

-5

single pulse

-4

10

-3

10

-2

10

t1, Square W ave Pulse Duration [sec]

4

Note s :

※

1. Z

(t) = 0.25 /W Max.

℃

θ JC

2. Du ty Factor, D =t1/t

3. TJM - TC = PDM * Z

P

DM

t

1

t

2

-1

10

2

(t)

θ JC

0

1

10

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12V

200nF

3mA

50KΩ

V

Gate Charge Test Circuit & Waveform

V

GS

300nF

Same Type

as DUT

DUT

V

DS

GS

10V

Resistive Switching Test Circuit & Waveforms

FDA59N30 300V N-Channel MOSFET

Q

g

Q

gs

Q

gd

Charge

10V

R

L

DUT

L

V

DD

V

DS

V

GS

R

G

V

DS

90%

10%

V

GS

t

d(on)tr

t

on

t

d(off)

t

f

t

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

L

LL

V

DS

BV

DSS

V

DSS

I

AS

DD

I

IDI

D

R

G

DUT

t

p

V

DD

1

----

E

=LI

E

=LI

E

AS

2

AS

(t)

I

D

t

p

DSS

--------------------

-------------------BV

BV

DSS-VDD

Time

V

(t)

V

(t)

DS

FDA59N30 Rev. A

5

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Peak Diode Recovery dv /dt Test Circuit & Waveforms

+

DUT

I

SD

Driver

R

G

V

GS

+

V

DS

_

L

LL

Same Type

as DUT

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

FDA59N30 300V N-Channel MOSFET

V

DD

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

Gate Pulse Width

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode

Forward Voltage Drop

di/dt

10V

V

DD

FDA59N30 Rev. A

6

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Mechanical Dimensions

FDA59N30 300V N-Channel MOSFET

TO-3PN

FDA59N30 Rev. A

Dimensions in Millimeters

7

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FDA59N30 300V N-Channel MOSFET

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

8

FDA59N30 Rev. A

Rev. I15

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