Datasheet FDH50N50, FDA50N50 Datasheet (Fairchild)

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FDH50N50 / FDA50N50 500V N-Channel MOSFET

TM

UniFET

FDH50N50 / FDA50N50

500V N-Channel MOSFET

Features

• 48A, 500V, R

• Low gate charge ( typical 105 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 45 pF)

rss

G

= 0.105Ω @VGS = 10 V

DS(on)

D

S

TO-247

FDH Series

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

!

"

!

"

" "

"

!

S

GSD

TO-3P

FDA Series

!

G

Absolute Maximum Ratings

Symbol Parameter FDH50N50/FDA50N50 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

T

J, TSTG

T

L

Drain-Source Voltage 500 V Drain Current - Continuous (TC = 25°C)

- Continuous (T Drain Current - Pulsed Gate-Source voltage ±20 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

- Derate above 25°C Operating and Storage Temperature Range -55 to +150 °C Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 1) (Note 1) (Note 3)

48

30.8 192 A

1868 mJ

48 A

62.5 mJ

4.5 V/ns

625

5

300 °C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.2 °C/W Thermal Resistance, Case-to-Sink 0.24 -- °C/W Thermal Resistance, Junction-to-Ambient -- 40 °C/W

A A

W

W/°C

FDH50N50 / FDA50N50 Rev. A

1

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDH50N50 FDH50N50 TO-247 - - 30 FDA50N50 FDA50N50 TO-3P - - 30

FDH50N50 / FDA50N50 500V N-Channel MOSFET

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV / ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

C

oss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 -- -- V Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.5--V/°C

D

V

= 400V, TC = 125°C

DS

--

25

250µAµA Gate-Body Leakage Current, Forward VGS = 20V, VDS = 0V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -20V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V Static Drain-Source

On-Resistance Forward Transconductance VDS = 40V, ID = 48A

Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance -- 760 1000 pF

= 10V, ID = 24A -- 0.089 0.105 Ω

V

GS

(Note 4)

-- 20 -- S

-- 4979 6460 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 50 65 pF Output Capacitance VDS = 400V, VGS = 0V, f = 1.0MHz -- 161 -- pF

eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 342 -- pF

Turn-On Delay Time VDD = 250V, ID = 48A

R

= 25Ω

Turn-On Rise Time -- 360 730 ns

G

-- 105 220 ns

Turn-Off Delay Time -- 225 460 ns Turn-Off Fall Time -- 230 470 ns Total Gate Charge VDS = 400V, ID = 48A

= 10V

V

Gate-Source Charge -- 33 -- nC

GS

Gate-Drain Charge -- 45 -- nC

(Note 4, 5)

-- 105 137 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 48 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 192 A Drain-Source Diode Forward Voltage VGS = 0V, IS = 48A -- -- 1.4 V Reverse Recovery Time VGS = 0V, IS = 48A

/dt =100A/µs

dI

Reverse Recovery Charge -- 10 -- µC

F

(Note 4)

-- 580 -- ns

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1.46mH, I

3. ISD ≤ 48A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

= 48A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

FDH50N50 / FDA50N50 Rev. A

2

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Typ ical Perform ance Character istics

FDH50N50 / FDA50N50 500V N-Channel MOSFET

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

V

2

10

1

10

0

10

, Drain Current [A]

D

I

-1

10

Top : 15.0 V 10 .0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

-1

GS

VDS, Drain-Source Voltage [V]

100

10

150oC

!

25oC

1

, Drain Current [A]

D

Notes :

1. 250

µ

s Pulse Test

2. T

= 25oC

!

0

10

C

1

10

I

0.1 45678910

!

VGS , Gate-Source Voltage [V]

-55oC

!

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.4

0.3

],

Ω

[

0.2

DS(ON)

R

0.1

Drain-Source On-Resistance

0.0 0 25 50 75 100 125 150 175

VGS = 10V

ID, Drain Current [A]

VGS = 20V

Note : TJ = 25oC

160

120

80

40

, Reverse Drain Current [A]

DR

I

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD , Source-Drain Voltage [V]

150oC

25oC

Notes :

1. V

2. 250

Notes :

1. V

2. 250

= 40V

DS

µ

s Pulse Test

= 0V

GS

µ

s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

12,000

10,000

8,000

6,000

4,000

Capacitance [pF]

2,000

0

-1

10

FDH50N50 / FDA50N50 Rev. A

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

C

oss

C

rss

0

10

1

10

VDS, Drain-Source Voltage [V]

12

gd

10

VDS = 100V

VDS = 250V

VDS = 400V

8

iss

Notes :

1. V

= 0 V

GS

2. f = 1 MHz

2

10

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 20 40 60 80 100 120

Note : ID = 48A

QG, Total Gate Charge [nC]

3

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FDH50N50 / FDA50N50 500V N-Channel MOSFET

Typ ical Perform ance Character istics

(Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

Notes :

1. V

2. I

= 0 V

GS

= 250 µA

D

2.5

2.0

1.5

, (Normalized)

1.0

DS(ON)

R

0.5

Drain-Source On-Resistance

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

, Drain Current [A] I

D

3

10

2

10

1

10

0

10

-1

10

Notes :

1. T

= 25 oC

C

= 150 oC

2. T

J

3. Single Pulse

0

Operation in This Area is Limited by R

1

10

DS(on)

10 ms

DC

2

10

VDS, Drain-Source Voltage [V]

1 ms

100 us

10 us

50

40

30

20

, Drain Current [A]

D

I

10

3

10

0

25 50 75 100 125 150

TC, Case Temperature [oC]

Notes :

1. V

2. I

GS

= 24 A

D

= 10 V

Figure 11. Typical Drain Current Slope Figure 12. Typical Drain-Source Voltage

vs. Gate Resistance Slope vs. Gate Resistance

4,000

3,500

3,000

2,500

S]

µ

2,000

1,500

di/dt [A/

1,000

500

0

0 5 10 15 20 25 30 35 40 45 50

FDH50N50 / FDA50N50 Rev. A

di/dt(on)

di/dt(off)

RG, Gate resistance [Ω]

Notes :

1. V

2. V

3. I

D

4. T

= 400 V

DS

= 12 V

GS

= 25A

= 125oC

J

45

40

35

30

25

20

dv/dt [V/nS]

15

dv/dt(off)

10

5

0

0 5 10 15 20 25 30 35 40 45 50

dv/dt(on)

Notes :

1. V

2. V

3. I

4. T

= 400 V

DS

= 12 V

GS

= 25A

D

= 125oC

J

!

RG, Gate resistance [Ω]

4

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FDH50N50 / FDA50N50 500V N-Channel MOSFET

Typ ical Perform ance Character istics

(Continued)

Figure 13. Typical Switching Losses vs. Figure 14. Unclamped Inductive Switching

Gate Resistance Capability

1,000

800

J]

600

µ

400

Energy [

200

0

0 5 10 15 20 25 30 35 40 45 50

RG, Gate resistance [Ω]

Eoff

Eon

Notes :

1. V

2. V

3. I

4. T

= 400 V

DS

= 12 V

GS

= 25A

D

= 125oC

J

100

Starting TJ = 150oC

!

10

, Avalanche Current [A]

AS

I

1

0.01 0.1 1 10 100

Notes :

1. If R = 0 Ω tAV = (L)(IAS)/(1.3 Ra te d B V

2. If R ≠ 0

Ω

tAV = (L/R)In[ (IAS x R)/(1.3 Rated BV

Starting TJ = 25oC

tAV, Time In Av a l a n ch e [m s ]

Figure 15. Transient Thermal Resistance Curve

-1

D=0.5

10

0.2

0.1

0.05

-2

10

0.02

0.01

(t), Thermal Response

JC

θ

Z

single pulse

Notes :

1. Z

(t) = 0.2 oC/W Max.

θ

JC

2. Duty Factor, D=t

3. TJM - TC = PDM * Z

1/t2

(t)

θ

JC

- VDD)

DSS

- VDD)+1]

DSS

FDH50N50 / FDA50N50 Rev. A

-3

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

t1, Square Wave Pulse Duration [sec]

5

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Mechanical Dimensions

TO-247AD (FKS PKG CODE 001)

FDH50N50 / FDA50N50 500V N-Channel MOSFET

FDH50N50 / FDA50N50 Rev. A

Dimensions in Millimeters

6

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FDH50N50 / FDA50N50 500V N-Channel MOSFET

Mechanical Dimensions

15.60 ±0.20

13.60 ±0.20

ø3.20 ±0.10

13.90 ±0.20

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20

9.60 ±0.20

(Continued)

TO-3P

3.80 ±0.20

12.76 ±0.20

19.90 ±0.20

3.50 ±0.20

23.40 ±0.20

16.50 ±0.30

18.70 ±0.20

4.80 ±0.20

+0.15

1.50

–0.05

1.40 ±0.20

5.45TYP

±0.30]

[5.45

5.45TYP

[5.45

±0.30]

0.60

+0.15 –0.05

FDH50N50 / FDA50N50 Rev. A

Dimensions in Millimeters

7

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

A

CEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

Across the board. Around the w or ld. ™ The Power Franchise

®

Programmable Active Droop™

®

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ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC

®

OPTOPLANAR™ PACMAN™ POP™

Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET

®

QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™

Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUM E ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FDH50N50 / FDA50N50 500V N-Channel MOSFET

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Forma tive or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

8

FDH50N50 / FDA50N50 Rev. A

Rev. I14

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