Datasheet fda33n25 Datasheet

tm

FDA33N25 N-Channel MOSFET

FDA33N25

N-Channel MOSFET

250V, 33A, 0.094Ω

Features

•R

• Low gate charge ( Typ. 36nC)

• Low C

• Fast switching

• Improved dv/dt capability

• RoHS compliant

= 0.088Ω ( Typ.)@ VGS = 10V, ID = 16.5A

DS(on)

( Typ. 35pF)

rss

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

September 2007

UniFET

D

TM

G

GSD

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

, T

T

J

STG

T

L

Drain to Source Voltage 250 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 132 A

Single Pulsed Avalanche Energy (Note 2) 918 mJ

Avalanche Current (Note 1) 33 A

Repetitive Avalanche Energy (Note 1) 24.6 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-3PN

C

S

= 25oC unless otherwise noted

-Continuous (T

(T

= 25oC) 245 W

C

- Derate above 25

= 25oC) 33

C

= 100oC) 21

C

o

C1.96W/

300

o

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

θCS

R

θJA

Thermal Resistance, Junction to Case 0.51

Thermal Resistance, Case to Sink Typ. 0.24

Thermal Resistance, Junction to Ambient 40

o

C/WR

A

o

C

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA33N25 FDA33N25 TO-3PN - - 50

FDA33N25 N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV ∆BV

∆T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 250 - - V Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC - 0.34 - V/oC

D

V

= 250V, V

DS

= 200V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 16.5A - 0.088 0.094 Ω

Forward Transconductance VDS = 20V, ID = 16.5A (Note 4) - 24.2 - S

Dynamic Characteristics

C

Q

iss

oss

rss

g(tot)

gs

gd

Input Capacitance

Output Capacitance - 315 420 pF

Reverse Transfer Capacitance - 35 55 pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 10.8 - nC

Gate to Drain “Miller” Charge - 16 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 142 293 ns

Turn-Off Delay Time - 77 165 ns

Turn-Off Fall Time - 68 146 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 200V, ID = 33A

DS

V

= 10V

GS

( Note 4 , 5)

= 125V, ID = 33A

V

DD

R

= 25Ω

G

(N ote 4, 5)

- 1655 2200 pF

-3646.8nC

-3376ns

µA

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1.35mH, I

≤ 33A, di/dt ≤ 200A/µs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDA33N25 Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 33 A

Maximum Pulsed Drain to Source Diode Forward Current - - 132 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 2.3 - µC

= 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 33A - - 1.4 V

SD

= 33A

SD

2

- 256 - ns

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100

V

= 15.0 V

GS

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

10

5.5 V

1

,Drain Current[A]

D

I

*Notes:

1. 250

µs Pulse Test

= 25oC

2. T

0.1

0.01 0.1 1 10

C

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.25

200

100

150oC

10

,Drain Current[A]

D

I

1

46810

25oC

-55oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

VGS,Gate-Source Voltage[V]

500

FDA33N25 N-Channel MOSFET

0.20

[Ω],

0.15

DS(ON)

R

VGS = 10V

VGS = 20V

0.10

Drain-Source On-Resistance

0.05 0 20406080100

*Note: TJ = 25oC

ID, Drain Current [A]

100

150oC

25oC

10

, Reverse Drain Current [A]

S

I

1

0.0 0.8 1.6 2.4

*Notes:

1. VGS = 0V

µs Pulse Test

2. 250

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

C

3000

C

2000

Capacitances [pF]

1000

0

0.1 1 10

iss

C

rss

VDS, Drain-Source Voltage [V]

gd

*Note:

1. V

= 0V

GS

2. f = 1MHz

30

10

VDS = 50V

= 125V

V

DS

V

= 200V

8

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

010203040

*Note: ID = 33A

Qg, Total Gate Charge [nC]

FDA33N25 Rev. A

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

1.2

1.1

3.0

2.5

2.0

FDA33N25 N-Channel MOSFET

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

= 0V

GS

= 250µA

D

1.5

, [Normalized]

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

= 10V

GS

= 16.5A

D

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

400

100

100µs

10

Operation in This Area

1

is Limited by R

, Drain Current [A]

D

I

0.1

0.01 110100

DS(on)

*Notes:

= 25oC

1. T

C

2. T

= 150oC

J

3. Single Pulse

VDS, Drain-Source Voltage [V]

1ms

10ms

DC

20µs

400

35

30

25

20

15

, Drain Current [A]

10

D

I

5

0

25 50 75 100 125 150

TC, Case Temperature [oC]

Figure 11. Transient Thermal Response Curve

1

FDA33N25 Rev. A

]

θJC

Thermal Response [Z

0.1

0.01

1E-3

0.5

0.2

0.1

0.05

0.02

0.01

Single pulse

-5

10

P

DM

t

1

t

*Notes:

1. Z

2. Duty Factor, D=t

3. TJM - TC = PDM * Z

-4

10

-3

10

-2

10

-1

10

2

(t) = 0.51oC/W Max.

θJC

0

10

1/t2

θJC

(t)

1

10

Rectangular Pulse Duration [sec]

4

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDA33N25 N-Channel MOSFET

FDA33N25 Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

p

g

p

+

V

DS

_

L

LL

Sam e Type

as DU T

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

V

GS

R

DUT

Driver

G

I

SD

V

DD

FDA33N25 N-Channel MOSFET

V

GS

( D riv e r )

I

SD

( D U T )

V

DS

( DUT )

G ate P ulse W idth

--------------------------

D =

Gate Pulse Period

IFM, B ody Diode Forw ard C urrent

I

RM

Body D iode R everse C urrent

Body D iode R ecovery dv/dt

V

SD

Body D iode

Forw ard Volta

e D ro

di/dt

10V

V

DD

FDA33N25 Rev. A

6

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Mechanical Dimensions

FDA33N25 N-Channel MOSFET

TO-3PN

FDA33N25 Rev. A

Dimensions in Millimeters

7

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FDA33N25 N-Channel MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to result in a significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild Semiconductor. The datasheet is printed for reference information only.

Rev. I31

FDA33N25 Rev. A

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