Datasheet FDA28N50 Datasheet (Fairchild)

FDA28N50

N-Channel MOSFET

500V, 28A, 0.155Ω

FDA28N50 N-Channel MOSFET

August 2008

TM

UniFET

Features

•R

• Low gate charge ( Typ. 80nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 5 V/ns

P

D

, T

T

J

T

L

= 0.122Ω ( Typ.)@ VGS = 10V, ID = 14A

DS(on)

( Typ. 42pF)

rss

GSD

Symbol Parameter Ratings Units

Drain to Source Voltage 500 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 112 A

Single Pulsed Avalanche Energy (Note 2) 2391 mJ

Avalanche Current (Note 1) 28 A

Repetitive Avalanche Energy (Note 1) 31 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-3PN

C

= 25oC unless otherwise noted

-Continuous (T

-Continuous (T

(T

= 25oC) 310 W

C

- Derate above 25

Description

These N-Channel enhancement mode power field effect
transistors are produced using Failchild’s proprietary, planar
stripe, DMOS technology.

This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
correction.

D

G

S

= 25oC) 28

C

= 100oC) 17

C

o

C2.5W/

300

o

o

A

o

C

C

C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

θCS

R

θJA

©2008 Fairchild Semiconductor Corporation
FDA28N50 Rev. A

Thermal Resistance, Junction to Case 0.4

Thermal Resistance, Case to Sink Typ. 0.24

Thermal Resistance, Junction to Ambient 40

o

C/WR

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA28N50 FDA28N50 TO-3PN - - 50

FDA28N50 N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250μA, Referenced to 25oC - 0.59 - V/oC

D

V

= 500V, V

DS

= 400V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 14A - 0.122 0.155 Ω

Forward Transconductance VDS = 20V, ID = 14A (Note 4) -34-S

Dynamic Characteristics

C

C

C

Q

Q

Q

iss

oss

rss

g(tot)

gs

gd

Input Capacitance

Output Capacitance - 576 766 pF

Reverse Transfer Capacitance - 42 63 pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 21 - nC

Gate to Drain “Miller” Charge - 32 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 126 262 ns

Turn-Off Delay Time - 210 430 ns

Turn-Off Fall Time - 110 230 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 400V, ID = 28A

DS

V

= 10V

GS

( Note 4, 5)

= 250V, ID = 28A

V

DD

R

= 25Ω

G

( Note 4, 5)

- 3866 5140 pF

- 80 105 nC

- 56 122 ns

μA

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 6.1mH, I

≤ 28A, di/dt ≤ 200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDA28N50 Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 28 A

Maximum Pulsed Drain to Source Diode Forward Current - - 112 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 8 - μC

= 28A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 28A - - 1.4 V

SD

= 28A

SD

2

- 530 - ns

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100

V

= 15.0V

GS

10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

10

,Drain Current[A]

D

I

*Notes:

1. 250

μs Pulse Test

= 25oC

2. T

1

0.2

110

C

20

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.25

200

100

150oC

-55oC

10

,Drain Current[A]

D

I

1

45678

25oC

*Notes:

1. V

2. 250

= 20V

DS

μs Pulse Test

VGS,Gate-Source Voltage[V]

200

FDA28N50 N-Channel MOSFET

100

0.20

[Ω],

DS(ON)

R

0.15

VGS = 10V

Drain-Source On-Resistance

0.10
0 25 50 75 100

*Note: TJ = 25oC

ID, Drain Current [A]

VGS = 20V

10

, Reverse Drain Current [A]

S

I

1

0.2 0.6 1.0 1.4

150oC

25oC

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

8000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

6000

4000

Capacitances [pF]

2000

0

0.1 1 10
VDS, Drain-Source Voltage [V]

gd

gd

*Note:

1. V

= 0V

GS

2. f = 1MHz

C

iss

C

oss

C

rss

30

10

VDS = 100V

= 250V

V

DS

= 400V

V

8

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

020406080

*Note: ID = 28A

Qg, Total Gate Charge [nC]

90

FDA28N50 Rev. A

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

1.2

1.1

3.0

2.5

2.0

FDA28N50 N-Channel MOSFET

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -25 25 75 125 175
TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

D

= 0V

GS

= 250μA

1.5

, [Normalized]

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

-75 -25 25 75 125 175
TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

D

= 10V

GS

= 14A

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

300

100

1ms

10

Operation in This Area
is Limited by R

1

, Drain Current [A]

D

I

DS(on)

0.1

0.01
1 10 100 1000

10ms

DC

*Notes:

1. T

= 25oC

C

2. T

= 150oC

J

3. Single Pulse

VDS, Drain-Source Voltage [V]

60μs

100μs

28

21

14

, Drain Current [A]

D

I

7

0

25 50 75 100 125 150

TC, Case Temperature [oC]

Figure 11. Transient Thermal Response Curve

FDA28N50 Rev. A

]

Thermal Response [Z

θJC

0.1

0.01

1E-3

1

0.5

0.2

0.1

0.05

0.02

0.01

Single pulse

-5

10

P

DM

t

1

t

2

*Notes:

1. Z

(t) = 0.4oC/W Max.

θJC

2. Duty Factor, D= t

3. TJM - TC = PDM * Z

-4

10

-3

10

-2

10

-1

10

1/t2

θJC

110

Rectangular Pulse Duration [sec]

4

(t)

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDA28N50 N-Channel MOSFET

FDA28N50 Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

p

g

p

+

+

V

V

DS

DS

_

_

L

LL

Sam e Type

Sam e Type

as DU T

as DU T

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontrolled by pulse period

•ISDcontrolled by pulse period

G

G

V

V

GS

GS

R

R

G

G

DUT

DUT

I

I

SD

SD

Driver

Driver

V

V

DD

DD

FDA28N50 N-Channel MOSFET

V

V

GS

GS

( D riv e r )

( D riv e r )

I

I

SD

SD

( D U T )

( D U T )

V

V

DS

DS

( DUT )

( DUT )

G ate P ulse W idth

G ate P ulse W idth

G ate P ulse W idth

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

IFM, B ody D iode Forw ard C urrent

IFM, B ody D iode Forw ard C urrent

I

I

RM

RM

Body D iode R everse C urrent

Body D iode R everse C urrent

Body D iode R ecovery dv/dt

Body D iode R ecovery dv/dt

V

V

SD

SD

Body Diode

Body Diode

Forw ard Volta

Forw ard Volta

e D ro

e D ro

di/dt

di/dt

10V

10V

V

V

DD

DD

FDA28N50 Rev. A

6

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Mechanical Dimensions

FDA28N50 N-Channel MOSFET

TO-3PN

FDA28N50 Rev. A

Dimensions in Millimeters

7

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FDA28N50 N-Channel MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDA28N50 Rev. A

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

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Rev. I35