Datasheet FDA24N50 Datasheet (Fairchild)

FDA24N50

N-Channel MOSFET

500V, 24A, 0.19Ω

FDA24N50 N-Channel MOSFET

August 2008

TM

UniFET

Features

•R

• Low gate charge ( Typ. 65nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

, T

T

J

T

L

= 0.16Ω ( Typ.)@ VGS = 10V, ID = 12A

DS(on)

( Typ. 35pF)

rss

GSD

Symbol Parameter Ratings Units

Drain to Source Voltage 500 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 96 A

Single Pulsed Avalanche Energy (Note 2) 1872 mJ

Avalanche Current (Note 1) 24 A

Repetitive Avalanche Energy (Note 1) 2.7 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-3PN

C

= 25oC unless otherwise noted

-Continuous (T

-Continuous (T

(T

= 25oC) 270 W

C

- Derate above 25

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advance technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switching mode power supplies and active power factor
correction.

D

G

S

= 25oC) 24

C

= 100oC) 14

C

o

C2.2W/

300

o

o

A

o

C

C

C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

θCS

R

θJA

©2008 Fairchild Semiconductor Corporation
FDA24N50 Rev. A

Thermal Resistance, Junction to Case 0.46

Thermal Resistance, Case to Sink Typ. 0.24

Thermal Resistance, Junction to Ambient 40

o

C/WR

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA24N50 FDA24N50 TO-3PN - - 30

FDA24N50 N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250μA, Referenced to 25oC - 0.66 - V/oC

D

V

= 500V, V

DS

= 400V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 12A - 0.16 0.19 Ω

Forward Transconductance VDS = 20V, ID = 12A (Note 4) -28-S

Dynamic Characteristics

C

C

C

Q

Q

Q

iss

oss

rss

g(tot)

gs

gd

Input Capacitance

Output Capacitance - 460 615 pF

Reverse Transfer Capacitance - 35 52 pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 18 - nC

Gate to Drain “Miller” Charge - 26 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 108 226 ns

Turn-Off Delay Time - 164 338 ns

Turn-Off Fall Time - 86 182 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 400V, ID = 24A

DS

V

= 10V

GS

( Note 4, 5)

= 250V, ID = 24A

V

DD

R

= 25Ω

G

( Note 4, 5)

- 3120 4150 pF

-6585nC

- 47 104 ns

μA

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 6.5mH, I

≤ 24A, di/dt ≤ 200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDA24N50 Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 24 A

Maximum Pulsed Drain to Source Diode Forward Current - - 96 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 8.1 - μC

= 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 24A - - 1.4 V

SD

= 24A

SD

2

- 540 - ns

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

60

10

V

= 15.0V

GS

10.0V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

100

150oC

10

-55oC

FDA24N50 N-Channel MOSFET

,Drain Current[A]

D

I

1

0.5

0.1 1 10

*Notes:

1. 250

2. T

μs Pulse Test

= 25oC

C

VDS,Drain-Source Voltage[V]

,Drain Current[A]

D

I

1

45678

VGS,Gate-Source Voltage[V]

25oC

*Notes:

1. V

2. 250

= 20V

DS

μs Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.35

0.30

0.25

[Ω],

0.20

DS(ON)

R

0.15

Drain-Source On-Resistance

0.10
0 20406080

ID, Drain Current [A]

VGS = 10V

VGS = 20V

*Note: TJ = 25oC

150

100

150oC

10

, Reverse Drain Current [A]

S

I

1

0.2 0.6 1.0 1.4

25oC

*Notes:

1. VGS = 0V

μs Pulse Test

2. 250

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

7500

6000

4500

3000

Capacitances [pF]

1500

FDA24N50 Rev. A

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

rss

0

0.1 1 10

= C

gd

gd

*Note:

1. V

2. f = 1MHz

C

C

oss

C

VDS, Drain-Source Voltage [V]

10

VDS = 100V

= 250V

V

DS

= 400V

V

DS

GS

8

= 0V

6

iss

4

, Gate-Source Voltage [V]

GS

V

2

rss

30

0

0204060

*Note: ID = 24A

70

Qg, Total Gate Charge [nC]

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

1.2

1.1

3.0

2.5

2.0

FDA24N50 N-Channel MOSFET

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -25 25 75 125 175
TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

D

= 0V

GS

= 250μA

1.5

, [Normalized]

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

-75 -25 25 75 125 175
TJ, Junction Temperature [oC]

*Notes:

1. V

2. I

D

= 10V

GS

= 12A

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

200

100

1ms

10

Operation in This Area

1

, Drain Current [A]

D

I

is Limited by R

DS(on)

0.1

0.01
1 10 100 1000

VDS, Drain-Source Voltage [V]

10ms

DC

*Notes:

1. T

= 25oC

C

= 150oC

2. T

J

3. Single Pulse

100μs

40μs

vs. Case Temperature

24

18

12

, Drain Current [A]

D

I

6

0

25 50 75 100 125 150

TC, Case Temperature [oC]

Figure 11. Transient Thermal Response Curve

FDA24N50 Rev. A

]

θJC

Thermal Response [Z

0.001

0.1

0.01

1

0.05

0.02

0.01

-5

10

0.5

0.2

0.1

Single pulse

P

DM

t

1

t

*Notes:

1. Z

θJC

2. Duty Factor, D= t

3. TJM - TC = PDM * Z

-4

10

-3

10

-2

10

-1

10

2

(t) = 0.46oC/W Max.

1/t2

(t)

θJC

0

10

Rectangular Pulse Duration [sec]

4

1

10

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDA24N50 N-Channel MOSFET

FDA24N50 Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

p

g

p

+

+

V

V

DS

DS

_

_

L

LL

Sam e Type

Sam e Type

as DU T

as DU T

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontrolled by pulse period

•ISDcontrolled by pulse period

G

G

V

V

GS

GS

R

R

Driver

Driver

G

G

DUT

DUT

I

I

SD

SD

V

V

DD

DD

FDA24N50 N-Channel MOSFET

V

V

GS

GS

( D riv e r )

( D riv e r )

I

I

SD

SD

( D U T )

( D U T )

V

V

DS

DS

( DUT )

( DUT )

G ate Pulse W idth

G ate Pulse W idth

G ate Pulse W idth

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

IFM, B ody Diode Forw ard C urrent

IFM, B ody Diode Forw ard C urrent

I

I

RM

RM

Body D iode R everse C urrent

Body D iode R everse Current

Body D iode R ecovery dv/dt

Body D iode R ecovery dv/dt

V

V

SD

SD

Body Diode

Body Diode

Forw ard Volta

Forw ard Volta

e D ro

e D ro

di/dt

di/dt

10V

10V

V

V

DD

DD

FDA24N50 Rev. A

6

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Mechanical Dimensions

FDA24N50 N-Channel MOSFET

TO-3PN

FDA24N50 Rev. A

Dimensions in Millimeters

7

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FDA24N50 N-Channel MOSFET

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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.

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As used herein:

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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDA24N50 Rev. A

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

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Rev. I35