Datasheet FDA24N40F Datasheet (Fairchild)

tm

FDA24N40F

N-Channel MOSFET, FRFET

400V, 23A, 0.19Ω

FDA24N40F N-Channel MOSFET

December 2007

TM

UniFET

Features

•R

• Low gate charge (Typ. 46nC)

• Low Crss (Typ.25pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt apability

• RoHS compliant

= 0.15Ω ( Typ.)@ VGS = 10V, ID = 11.5A

DS(on)

Descripition

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D

G

TO-3PN

GSD

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

, T

T

J

STG

T

L

Drain to Source Voltage 400 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 92 A

Single Pulsed Avalanche Energy (Note 2) 1190 mJ

Avalanche Current (Note 1) 23 A

Repetitive Avalanche Energy (Note 1) 23.5 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted*

C

-Continuous (T

(T

= 25oC) 235 W

C

- Derate above 25

= 25oC) 23

C

= 100oC) 13.8

C

o

C1.8W/

S

o

300

o

A

o

C

Thermal Characteristics

Symbol Parameter Min. Max. Units

R

θJC

θCS

R

θJA

Thermal Resistance, Junction to Case - 0.53

Thermal Resistance, Case to Sink Typ. 0.24 -

Thermal Resistance, Junction to Ambient - 40

o

C/WR

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FDA24N40F N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDA24N40F FDA24N40F TO-3PN - - 30

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 400 - - V Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC-0.5-V/

D

V

= 400V, V

DS

= 320V, TC = 125oC - - 100

V

DS

= 0V - - 10

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V

Static Drain to Source On Resistance VGS = 10V, ID = 11.5A - 0.15 0.19 Ω

Forward Transconductance VDS = 20V, ID = 11.5A (Note 4) -29-S

Input Capacitance

Output Capacitance - 370 490 pF

Reverse Transfer Capacitance - 25 38 pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 13 - nC

Gate to Drain “Miller” Charge - 18 - nC

= 25V, VGS = 0V

V

DS

f = 1MHz

= 320V

V

DS

I

= 23A

D

(Note 4, 5)

- 2280 3030 pF

-4660nC

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 92 195 ns

Turn-Off Delay Time - 120 250 ns

Turn-Off Fall Time - 75 160 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 4.5mH, I

≤ 23A, di/dt ≤ 200A/µs, VDD ≤ BV

3: I

SD

4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 23 A

Maximum Pulsed Drain to Source Diode Forward Current - - 92 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 0.3 - µC

= 23A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC

AS

, Starting TJ = 25°C

DSS

= 200V, ID = 23A

V

DS

R

= 25Ω

G

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 23A - - 1.5 V

SD

= 23A

SD

-4090ns

(Note 4, 5)

-110 -ns

FDA24N40F Rev. A

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

70

V

= 15.0V

GS

10.0V

8.0 V

7.0 V

6.5 V

10

6.0 V

5.5 V

1

,Drain Current[A]

D

I

*Notes:

1. 250

µs Pulse Test

= 25oC

2. T

0.1

0.02

0.1 1 10

C

15

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.36

100

10

,Drain Current[A]

D

I

1

45678

150oC

25oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

VGS,Gate-Source Voltage[V]

200

FDA24N40F N-Channel MOSFET

0.32

100

0.28

[Ω],

0.24

DS(ON)

R

0.20

0.16

Drain-Source On-Resistance

VGS = 10V

VGS = 20V

*Note: TJ = 25oC

0.12 0 20406080

ID, Drain Current [A]

150oC

10

, Reverse Drain Current [A]

S

I

1

0.0 0.4 0.8 1.2 1.6

VSD, Body Diode Forward Voltage [V]

25oC

*Notes:

1. VGS = 0V

µs Pulse Test

2. 250

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000

4000

3000

C

oss

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

iss

2000

Capacitances [pF]

1000

C

rss

0

0.1 1 10 VDS, Drain-Source Voltage [V]

gd

*Note:

1. V

= 0V

GS

2. f = 1MHz

30

10

VDS = 100V V

= 200V

8

V

DS

= 320V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

*Note: ID = 23A

0

0 1020304050

Qg, Total Gate Charge [nC]

FDA24N40F Rev. A

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. Maximum Safe Operating Area vs. Temperature

1.2

1.1

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

= 0V

GS

= 250µA

D

TJ, Junction Temperature [oC]

Figure 9. Maximum Drain Current vs. Case Temperature

25

200

100

10

Operation in This Area is Limited by R

1

, Drain Current [A]

D

I

DS(on)

0.1

0.01 110100

VDS, Drain-Source Voltage [V]

1ms

10ms

DC

*Notes:

= 25oC

1. T

C

2. T

= 150oC

J

3. Single Pulse

30µs

100µs

800

FDA24N40F N-Channel MOSFET

20

15

10

, Drain Current [A]

D

I

5

0

25 50 75 100 125 150

TC, Case Temperature [oC]

Figure 10. Transient Thermal Response Curve

1

]

0.5

θJC

0.2

0.1

Thermal Response [Z

0.01

1E-3

0.1

0.05

0.02

0.01

Single pulse

-5

10

-4

10

-3

10

-2

10

-1

10

Rectangular Pulse Duration [sec]

P

DM

*Notes:

1. Z

(t) = 0.53oC/W Max.

θJC

2. Duty Factor, D= t

3. TJM - TC = PDM * Z

0

10

t

1

t

2

1/t2

θJC

1

10

(t)

2

10

FDA24N40F Rev. A

4

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDA24N40F N-Channel MOSFET

FDA24N40F Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

p

g

p

+

V

DS

_

L

LL

Sam e Type

as DU T

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

V

GS

R

Driver

G

DUT

I

SD

V

DD

FDA24N40F N-Channel MOSFET

V

GS

( D riv e r )

I

SD

( D U T )

V

DS

( DUT )

G ate P ulse W idth

--------------------------

D =

Gate Pulse Period

IFM, Body Diode Forw ard C urrent

I

RM

Body D iode R everse C urrent

Body D iode R ecovery dv/dt

V

SD

Body D iode

Forw ard Volta

e D ro

di/dt

10V

V

DD

FDA24N40F Rev. A

6

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Mechanical Dimensions

FDA24N40F N-Channel MOSFET

TO-3PN

FDA24N40F Rev. A

Dimensions in Millimeters

7

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FDA24N40F N-Channel MOSFET

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data; supplementary data will be pub-

Preliminary First Production

lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

This datasheet contains specifications on a product that has been discontin-

Obsolete Not In Production

ued by Fairchild semiconductor. The datasheet is printed for reference information only.

FDA24N40F Rev. A

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Rev. I32