Page 1
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - MARCH 1999
FEATURES
* 2W POWER DISSIPATION
* 6A Peak Pulse Current
* Gain of 400 @I
* Very Low Saturation Voltage
=1Amp
C
FCX690B
C
Complimentary Type - FCX790A
Partmarking Detail - 690
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
CBO
CEO
EBO
CM
C
tot
j:Tstg
s. Duty cycle 2%
45 V
45 V
5V
6A
2A
1 †
2 ‡
-55 to +150 °C
W
W
E
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FCX690B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer
Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
ibo
obo
on
t
off
45 V
=100A
I
C
45 V IC=10mA*
5V
0.1
0.1
A
A
80
300mVmV
=100A
I
E
V
=35V
CB
V
=4V
EB
IC=0.1A, IB=0.5mA *
I
=1A, IB=5mA *
C
0.9 V IC=1A, IB=10mA *
0.85 V IC=1A, VCE=2V *
500
400
150
IC=100mA, VCE=2V*
I
=1A, VCE=2V*
C
I
=2A, VCE=2V*
C
150 MHz IC=50mA, VCE=5V
f=50MHz
200 pF VEB=0.5V, f=1MHz
16 pF VCB=10V, f=1MHz
33
1300
s. Duty cycle 2%
ns
ns
IC=500mA, IB1=IB2=50mA
V
=10V
CC
Page 3
TYPICA L CHARACTERIS TI C S
FCX690B
0.8
0.6
olts)
- (V
)
0.4
at
(s
E
C
V
0.2
0
IC - Collector Current (Amps)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- Normalised Gain
E
0.2
F
h
0
+100°C
+25°C
-55°C
0
IC -
1.6
1.4
1.2
olts)
1.0
- (V
E
0.8
B
V
0.6
0.4
0.2
0
0
IC - Collector Current (Amps)
T
=25°C
IC/IB=200
IC/IB=100
IC/IB=10
0.01 0.1 1 10
amb
olts)
- (V
)
at
(s
E
C
V
0.8
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
IC/IB=100
IC - Collector Current (Amps)
CE(sat)
V
0.01 0.1
v IC
1
VCE=2V
1.5K
1K
ypical Gain
500
- T
E
F
h
10
1.6
1.4
)
lts
1.2
o
V
(
1.0
-
)
0.8
at
(s
E
0.6
B
V
0.4
0.2
0
Collector Current (Amps)
hFEv IC V
10
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
BE(on)
V
v IC
VCE=2V
ps)
Am
(
1
nt
e
r
Cur
r
to
c
le
l
Co
-
C
I
D.C.
1s
100ms
10ms
0.1
0.01
0.1 100110
V
CE(sat)
V
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC -
Single Pulse Test at T
1.0ms
0.1ms
- Collector Voltage (Volts)
CE
BE(sat)
v IC
v IC
IC/IB=100
=25°C
amb
Safe Operating Area
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