Datasheet FCX619 Datasheet (Zetex Semiconductor)

SOT89 NPN SILICON POWER

FCX619

(SWITCHING) TRANSISTOR

ISSUE 5 - SEPTEMBER 1999

FEATURES

* 2W POWER DISSIPATION

* 6A PEAK PULSE CURRENT
* EXCELLENT h

CHARACTERISTICS UP TO 6 Amps

FE

* EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ.
* EXTREMELY LOW EQUIVALENT ON-RESISTANCE;

*R

87mat 2.75A

CE(sat)

COMPLIMENTARY TYPE - FCX720
PARTMARKING DETAIL - 619

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at T

Operating and Storage Temperature Range T

† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.
**Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for these devices

=25°C P

amb

calculated using FR4 measuring 15x15x0.6mm

tot

Refer to the handling instructions for soldering surface mount components.

CBO

CEO

EBO

CM

C

B

tot

j:Tstg



s. Duty cycle  2%

-55 to +150 °C

C

E

C

B

50 V

50 V

5V

6A

2.75 A

500 mA

1†
2‡

W

FCX619

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base

Breakdown Voltage
Collector-Emitter

Breakdown Voltage
Emitter-Base

Breakdown Voltage
Collector Cut-Off

Current
Emitter Cut-Off Current I
Collector Emitter

Cut-Off Current
Collector-Emitter

Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current
Transfer Ratio

Transition
Frequency

Output Capacitance C
Turn-On Time t
Turn-Off Time t

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

EBO

I

CES

V

CE(SAT)

V

BE(SAT)

V

BE(ON)

h

FE

f

T

OBO

(ON)

(OFF)

*Measured under pulsed conditions. Pulse width=300

50 190 V

=100A

I

C

50 65 V IC=10mA*

58.3 V

=100A

I

E

100 nA VCB=40V

100 nA VEB=4V

13
150
190
240

100 nA V

25
220
260
320

mV
mV
mV
mV

=40V

CES

IC=0.1A, IB=10mA*
I

=1A, IB=10mA*

C

I

=2A, IB=50mA*

C

=2.75A,IB=100mA*

I

C

0.97 1.1 V IC=2.75A,
I

=100mA*

B

0.89 1.0 V IC=2.75A, VCE=2V*

200
300
200
100

400
450
400
200
30

IC=10mA, VCE=2V*
I

=200mA, VCE=2V*

C

I

=1A, VCE=2V*

C

I

=2A, VCE=2V*

C

I

=6A, VCE=2V*

C

100 165 MHz IC=50mA, VCE=10V

f=100MHz

12 20 pF VCB=10V, f=1MHz
170 ns VCC=10V, IC=1A

I

=-IB2=10mA

750 ns



s. Duty cycle  2%

B1

Spice parameter data is available upon request for this device

FCX619