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SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 12A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage E.g. 8mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
Partmarking Detail - 617
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
Characteristics up to 12 Amps
FE
50mΩ at 3A
CBO
CEO
EBO
CM
C
B
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
tot
j:Tstg
FCX617
C
C
B
15 V
15 V
5V
12 A
3A
500 mA
1 †
2 ‡
-55 to +150 °C
W
W
E
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FCX617
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
(on)
(off)
15 V
I
=100µA
C
15 V IC=10mA*
5V
I
=100µA
E
0.3 100 nA VCB=10V
0.3 100 nA VEB=4V
0.3 100 nA V
14
100
230
300
400
mV
mV
mV
mV
mV
8
70
150
=10V
CES
I
=0.1A, IB=10mA*
C
I
=1A, IB=10mA*
C
I
=3A, IB=50mA*
C
I
=4A, IB=50mA*
C
I
=5A, IB=50mA*
C
0.89 1.0 V IC=3A, IB=50mA*
0.82 1.0 V IC=3A, VCE=2V*
200
300
200
150
415
450
320
240
80
IC=10mA, VCE=2V*
I
=200mA, VCE=2V*
C
I
=3A, VCE=2V*
C
I
=5A, VCE=2V*
C
I
=12A, VCE=2V*
C
80 120 MHz IC=50mA, VCE=10V
f=50MHz
30 40 pF VCB=10V, f=1MHz
120 ns VCC=10V, IC=3A
I
=50mA
160 ns
B1=IB2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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TYPICAL CHARACTERISTICS
1
+25 °C
100m
10m
1m
1m 100m 10
10m 1
IC- Collector Current (A)
VCE(SAT) v IC
IC/IB=100
C/IB=60
I
I
C/IB=10
FCX617
0.4
I
C/IB=60
0.3
0.2
0.1
0.0
1mA 10mA 100mA 1A 10A
100°C
25°C
-55°C
Collector Current
VCE(SAT) vs IC
10A
100°C
1.2
1.0
25°C
VCE=2V
0.8
0.6
-55°C
0.4
0.2
0.0
1mA 10mA
Collector Current
100mA
1A 10A
hFE vs IC
1.4
V
=2V
CE
1.2
1.0
0.8
0.6
0.4
-55°C
25°C
100°C
0.2
0.0
1mA 10mA 100mA 1A 10A 100A
Collector Current
VBE(ON) vs IC
100A
450
225
0
1.4
IC/IB=60
1.2
1.0
0.8
0.6
-55°C
25°C
100°C
0.4
0.2
0.0
100mA
10mA1mA
10A1A
Collector Current
VBE(SAT) vs IC
100
10
DC
1
1s
100ms
10ms
1ms
100us
0.1
100m 10 100
1
VCE(VOLTS)
Safe Operating Area
100A
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