Page 1
FCPF400N60
G
S
D
TO-220F
G
S
D
600V N-Channel MOSFET
FCPF400N60 N-Channel
March 2012
SuperFET® II
Features
• 650V @TJ = 150°C
•Max. R
• Ultra low gate charge (typ. Q
• Low effective output capacitance (typ. C
• 100% avalanche tested
DS(on)
= 400mΩ
= 28nC)
g
.eff = 90pF)
oss
Absolute Maximum Ratings T
Symbol Parameter FCPF400N60 Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 600 V
Gate to Source Voltage
Drain Current
Drain Current - Pulsed (Note 1) 30* A
Single Pulsed Avalanche Energy (Note 2) 211.6 mJ
Avalanche Current (Note 1) 2.3 A
Repetitive Avalanche Energy (Note 1) 1.06 mJ
Peak Diode Recovery dv/dt (Note 3) 20
MOSFET dv/dt 100
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted
C
-DC ±20
-AC (f>1HZ) ±30
-Continuous (T
-Continuous (T
(T
= 25oC) 31 W
C
- Derate above 25
Description
SuperFET®II is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET
power conversion in switching mode operation for system miniaturization and higher efficiency.
= 25oC) 10*
C
= 100oC) 6.3*
C
o
C0.25W/
®
II is very suitable for various AC/DC
300
V
A
V/ns
o
C
o
C
MOSFET
o
C
Thermal Characteristics
Symbol Parameter
R
θJC
θCS
R
θJA
©2012 Fairchild Semiconductor Corporation
FCPF400N60 Rev. C2
Thermal Resistance, Junction to Case 4
Thermal Resistance, Case to Heat Sink (Typical) 0.5
Thermal Resistance, Junction to Ambient 62.5
FCPF400N60
www.fairchildsemi.com1
Units
o
C/WR
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCPF400N60 FCPF400N60 TO-220F - - 50
FCPF400N60 N-Channel
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
V
= 0V, ID = 10mA, TJ = 25°C 600 - - V
BV
ΔBV
ΔT
BV
I
DSS
I
GSS
DSS
DSS
J
DS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
GS
= 0V, ID = 10mA, TJ = 150°C 650 - - V
V
GS
I
= 10mA, Referenced to 25oC-0.6-V/
D
V
= 0V, ID = 10A - 700 - V
GS
V
= 480V, V
DS
= 480V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA2.5-3.5V
Static Drain to Source On Resistance VGS = 10V, ID = 5A - 0.35 0.40 Ω
V
Forward Transconductance
= 20V, ID = 5A
DS
-11-S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 90 - pF
C
oss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 860 1144 pF
Reverse Transfer Capacitance - 43 54 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Output Capacitance VDS = 380V, VGS = 0V, f = 1.0MHz - 22 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 5 - nC
Gate to Drain “Miller” Charge - 10 - nC
V
= 380V, ID = 5A
DS
V
= 10V
GS
(Note 4)
ESR Equivalent Series Resistance Drain Open 1 Ω
- 1180 1580 pF
-2838nC
μA
o
C
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 7 24 ns
Turn-Off Delay Time - 43 95 ns
Turn-Off Fall Time - 6 21 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
= 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
2. I
AS
3. I
≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4. Essentially Independent of Operating Temperature Typical Characteristics
FCPF400N60 Rev. C2
Maximum Continuous Drain to Source Diode Forward Current - - 10 A
Maximum Pulsed Drain to Source Diode Forward Current - - 30 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 2.7 - μC
, Starting TJ = 25°C
DSS
= 380V, ID = 5A
V
DD
V
= 10V, RG = 4.7Ω
GS
(Note 4)
= 0V, I
GS
= 0V, I
V
GS
dI
/dt = 100A/μs
F
= 5A - - 1.2 V
SD
= 5A
SD
2
-1337ns
- 240 - ns
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Page 3
Typical Performance Characteristics
0.1 1 10
0.1
1
10
50
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
345678
1
10
100
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltag e [V]
0 5 10 15 20 25 30
0.2
0.4
0.6
0.8
1.0
1.2
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.3 0.6 0.9 1.2 1.5
1
10
100
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10 100 1000
0.1
1
10
100
1000
10000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V ]
0 9 18 27 36
0
2
4
6
8
10
*Note: ID = 5A
VDS = 120V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [n C]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FCPF400N60 N-Channel
MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FCPF400N60 Rev. C2
3
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Page 4
Typical Performance Characteristics (Continued)
-80 -40 0 40 80 120 160
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 1mA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-80 -40 0 40 80 120 160
0.5
1.0
1.5
2.0
2.5
*Notes:
1. V
GS
= 10V
2. I
D
= 5A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0
3
6
9
12
I
D
, Drain Current [A]
TC, Case Temperature [oC]
0.1 1 10 100 1000
0.01
0.1
1
10
100
10μs
100μs
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25oC
2. T
J
= 150oC
3. Single Pulse
DC
0 100 200 300 400 500 600
0
1
2
3
4
5
6
E
OSS
, [μJ]
VDS, Drain to Source Voltage [V]
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 11. Maximum Drain Current
vs. Case Temperature
FCPF400N60 N-Channel
MOSFET
Figure 12. Eoss vs. Drain to Source Voltage
Switching Capability
FCPF400N60 Rev. C2
4
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Page 5
Typical Performance Characteristics (Continued)
10
-5
10
-4
10
-3
10
-2
10
-1
110
100
0.01
0.1
1
5
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θJC
(t) = 4oC/W Max.
2. Dut y Factor, D= t
1/t2
3. TJM - TC = PDM * Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
Figure 13. Transient Thermal Response Curve - FCPF400N60
FCPF400N60 N-Channel
MOSFET
FCPF400N60 Rev. C2
www.fairchildsemi.com5
Page 6
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCPF400N60 N-Channel
MOSFET
FCPF400N60 Rev. C2
6
www.fairchildsemi.com
Page 7
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recoverydv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recoverydv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
FCPF400N60 N-Channel
Peak Diode Recovery dv/dt Test Circuit & Waveforms
MOSFET
FCPF400N60 Rev. C2
7
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Page 8
Package Dimensions
TO-220F (Retractable)
FCPF400N60 N-Channel
MOSFET
FCPF400N60 Rev. C2
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
8
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Page 9
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FCPF400N60 N-Channel
MOSFET
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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
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Definition of Terms
.
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Preliminary First Productio n
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Rev. I61
FCPF400N60 Rev. C2 www.fairchildsemi.com9
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