Datasheet FCP9N60N, FCPF9N60NT Datasheet (Fairchild)

tm

FCP9N60N / FCPF9N60NT N-Channel MOSFET

SupreMOS

FCP9N60N / FCPF9N60NT

N-Channel MOSFET

600V, 9A, 0.385Ω

Features

•R

• Ultra low gate charge ( Typ. Qg = 22nC)

• Low effective output capacitance

• 100% avalanche tested

• RoHS compliant

= 0.33Ω ( Typ.)@ VGS = 10V, ID = 4.5A

DS(on)

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.

D

August 2009

TM

G

TO-220

G D S

MOSFET Maximum Ratings T

Symbol Parameter FCP9N60N FCPF9N60NT Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt

P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 600 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current - Pulsed (Note 1) 27 27* A

Single Pulsed Avalanche Energy (Note 2) 135 mJ

Avalanche Current 3 A

Repetitive Avalanche Energy 0.83 mJ

MOSFET dv/dt Ruggedness 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20 V/ns

Power Dissipation

Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

FCP Series

C

D

G

S

= 25oC unless otherwise noted*

-Continuous (T

(T

= 25oC) 83.3 29.8 W

C

- Derate above 25

TO-220F FCPF Series

S

= 25oC) 9.0 9.0*

C

= 100oC) 5.7 5.7*

C

o

C0.670.24W/

300

Thermal Characteristics

Symbol Parameter FCP9N60N FCPF9N60NT Units

R

θJC

θCS

R

θJA

Thermal Resistance, Junction to Case 1.5 4.2

Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5

Thermal Resistance, Junction to Ambient 62.5 62.5

A

o

C

o

C

o

C

o

C/WR

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCP9N60N FCP9N60N TO-220 - - 50

FCPF9N60NT FCPF9N60NT TO-220F - - 50

FCP9N60N / FCPF9N60NT N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV ΔBV

ΔT

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 1mA, Referenced to 25oC - 0.72 - V/oC

D

V

= 480V, V

DS

= 480V, V

V

DS

= 0V - - 10

GS

= 0V, TC = 125oC - - 100

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V

Static Drain to Source On Resistance VGS = 10V, ID = 4.5A - 0.33 0.385 Ω

Forward Transconductance VDS = 40V, ID = 4.5A - 7.5 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 106 - pF

C

oss

Q

g(tot)

Q

gs

Q

gd

Input Capacitance

Output Capacitance - 35 50 pF

Reverse Transfer Capacitance - 2 4 pF

= 100V, VGS = 0V

V

DS

f = 1MHz

Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 20 - pF

Total Gate Charge at 10V

= 380V, ID = 4.5A,

V

Gate to Source Gate Charge - 4.1 - nC

Gate to Drain “Miller” Charge - 7.1 - nC

DS

V

= 10V

GS

(Note 4)

ESR Equivalent Series Resistance (G-S) Drain Open 2.9 Ω

- 930 1240 pF

- 22.0 29 nC

μA

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 8.7 27.4 ns

Turn-Off Delay Time - 36.9 83.8 ns

Turn-Off Fall Time - 10.2 30.4 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. I

= 3A, RG = 25Ω, Starting TJ = 25°C

AS

3. ISD ≤ 9A, di/dt ≤ 200A/μs, VDD = 380V, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

FCP9N60N / FCPF9N60NT Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 9.0 A

Maximum Pulsed Drain to Source Diode Forward Current - - 27 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 2.2 - μC

= 380V, ID = 4.5A

V

DD

= 4.7Ω

R

G

(Note 4)

= 0V, I

GS

= 0V, I

V

GS

dI

/dt = 100A/μs

F

= 4.5A - - 1.2 V

SD

= 4.5A

SD

2

- 12.7 35.4 ns

- 213 - ns

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Typical Performance Characteristics

FCP9N60N / FCPF9N60NT N-Channel MOSFET

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100

V

=

15.0 V

GS

10.0 V

8.0 V

7.0 V

6.5 V

10

6.0 V

5.5 V

5.0 V

1

, Drain Current[A]

D

I

0.1

0.1 1 10 20

VDS, Drain-Source Voltage[V]

*Notes:

1. 250

2. T

μ

s Pulse Test

= 25oC

C

60

10

1

, Drain Current[A]

D

I

0.1 2468

150oC

VGS, Gate-Source Voltage[V]

-55oC

25oC

*Notes:

1. V

2. 250

= 20V

DS

μ

s Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

1.2

1.0

,

0.8

]

Ω

[

0.6

DS(ON)

R

0.4

Drain-Source On-Resistance

0.2 0 5 10 15 20 25

ID, Drain Current [A]

VGS = 10V

*Notes: T

VGS = 20V

= 25oC

C

100

150oC

10

, Reverse Drain Current [A]

S

I

1

0.4 0.6 0.8 1.0 1.2 1.4

25oC

*Notes:

1. VGS = 0V

μ

s Pulse Test

2. 250

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000

4000

3000

2000

Capacitances [pF]

1000

0

0.1 1 10 100 600

FCP9N60N / FCPF9N60NT Rev. A

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted

iss

C

= Cds + C

oss

C

= C

rss

C

oss

C

iss

C

rss

gd

*Notes:

1. V

2. f = 1MHz

)

= 0V

GS

10

VDS = 120V V

= 300V

8

V

DS

= 480V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 5 10 15 20 25

*Notes: I

Qg, Total Gate Charge [nC]

3

= 4.5A

D

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

1.2

1.1

3.0

2.5

2.0

FCP9N60N / FCPF9N60NT N-Channel MOSFET

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200 TJ, Junction Temperature

*Notes:

1. V

2. I

D

o

[

C

]

= 0V

GS

= 1mA

1.5

, [Normalized]

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature

= 10V

GS

= 4.5A

D

o

[

C

]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area

50

10

1

, Drain Current [A]

D

I

0.1

0.01

_ FCP9N60N

10μs

100μs

1ms

10ms

DC

Operation in This Area is Limited by R

1 10 100 1000

DS(on)

*Notes:

1. T

= 25oC

C

= 150oC

2. T

J

3. Single Pulse

VDS, Drain-Source Voltage [V]

_ FCPF9N60NT

100

10

1ms

1

Operation in This Area is Limited by R

, Drain Current [A]

D

I

0.1

0.01 1 10 100 1000

DS(on)

*Notes:

= 25oC

1. T

C

2. T

= 150oC

J

3. Single Pulse

VDS, Drain-Source Voltage [V]

10ms

DC

10μs

100μs

Figure 11. Maximum Drain Current vs. Case Temperature

10

8

6

4

, Drain Current [A]

D

I

2

0

25 50 75 100 125 150

TC, Case Temperature

FCP9N60N / FCPF9N60NT Rev. A

o

[

C

]

4

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Typical Performance Characteristics (Continued)

Figure 12. Transient Thermal Response Curve _ FCP9N60N

2

1

0.5

]

JC

θ

Z

0.2

[

0.1

0.05

0.1

0.02

0.01

Single pulse

Thermal Response

0.01

0.005

-5

10

-4

10

-3

10

Rectangular Pulse Duration [sec]

Figure 13. Transient Thermal Response Curve _ FCPF9N60NT

5

0.5

]

θJC

1

0.2

0.1

0.05

0.02

0.1

0.01

Single pulse

Thermal Response [Z

0.01

-5

10

-4

10

-3

10

-2

10

-1

10

Rectangular Pulse Duration [sec]

P

DM

t

1

t

*Notes:

1. Z

2. Duty Factor, D= t

3. TJM - TC = PDM * Z

-2

10

P

DM

*Notes:

1. Z

2. Duty Factor, D= t

3. TJM - TC = PDM * Z

2

(t) = 1.5oC/W Max.

θ

JC

-1

10

t

1

t

2

(t) = 3.6oC/W Max.

θJC

1/t2

θJC

θ

JC

11010210

(t)

1

(t)

3

FCP9N60N / FCPF9N60NT N-Channel MOSFET

FCP9N60N / FCPF9N60NT Rev. A

5

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FCP9N60N / FCPF9N60NT N-Channel MOSFET

FCP9N60N / FCPF9N60NT Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

6

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

p

g

p

+

V

DS

_

L

LL

Sam e Type

as DU T

• dv/dt controlled by R

•ISDcontrolled by pulse period

G

V

GS

R

DUT

Driver

G

I

SD

V

DD

FCP9N60N / FCPF9N60NT N-Channel MOSFET

V

GS

( D riv e r )

I

SD

( D U T )

V

DS

( DUT )

G ate Pulse W idth

--------------------------

D =

Gate Pulse Period

IFM, B ody D iode Forw ard C urrent

I

RM

Body D iode R everse C urrent

Body D iode R ecovery dv/dt

V

SD

Body D iode

Forw ard Volta

e D ro

di/dt

10V

V

DD

FCP9N60N / FCPF9N60NT Rev. A

7

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Mechanical Dimensions

FCP9N60N / FCPF9N60NT N-Channel MOSFET

TO-220

FCP9N60N / FCPF9N60NT Rev. A

Dimensions in Millimeters

8

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Mechanical Dimensions

FCP9N60N / FCPF9N60NT N-Channel MOSFET

TO-220F

FCP9N60N / FCPF9N60NT Rev. A

Dimensions in Millimeters

9

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Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

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FCP9N60N / FCPF9N60NT N-Channel MOSFET

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As used herein:

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FCP9N60N / FCPF9N60NT Rev. A

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I41