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FCH76N60NF
600V N-Channel MOSFET, FRFET
FCH76N60NF 600V N-Channel MOSFET, FRFET
January 2011
SupreMOS®
tm
Features
•R
• Ultra Low Gate Charge ( Typ.Q
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A
DS(on)
= 230nC)
g
G
D
S
Symbol Parameter Ratings Units
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 218 A
Single Pulsed Avalanche Energy (Note 2) 7381 mJ
Avalanche Current 24.3 A
Repetitive Avalanche Energy 5.43 mJ
MOSFET dv/dt Ruggedness 100
Peak Diode Recovery dv/dt (Note 3) 50
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TO-247
FCH Series
= 25oC unless otherwise noted
C
-Continuous (T
-Continuous (T
(T
= 25oC) 543 W
C
- Derate above 25
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
S
= 25oC) 72.8
C
= 100oC) 46
C
o
C4.34W/
300
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.23
Thermal Resistance, Case to Heat Sink (Typical) 0.24
Thermal Resistance, Junction to Ambient 40
A
V/ns
o
C
o
C
o
C/WR
o
C
©2011 Fairchild Semiconductor Corporation
FCH76N60NF Rev. A2
www.fairchildsemi.com1
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCH76N60NF FCH76N60NF TO-247 - - 30
FCH76N60NF 600V N-Channel MOSFET, FRFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 1mA, Referenced to 25oC - 0.73 - V/oC
D
V
= 480V, V
DS
= 480V, V
V
DS
= 0V - - 10
GS
= 0V, TC = 125oC - - 100
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 38A - 28.7 38.0 mΩ
Forward Transconductance VDS = 20V, ID = 38A - 92 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
eff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 896 - pF
C
oss
Q
g(tot)
Q
gs
Q
gd
ESR Equivalent Series Resistance(G-S) Drain Open - 1.2 - Ω
Input Capacitance
Output Capacitance - 361 480 pF
Reverse Transfer Capacitance - 3.3 5.0 pF
= 100V, VGS = 0V
V
DS
f = 1MHz
- 8305 11045 pF
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 192 - pF
Total Gate Charge at 10V
V
= 380V, ID = 38A,
Gate to Source Gate Charge - 44 - nC
Gate to Drain “Miller” Charge - 95 - nC
DS
= 10V
V
GS
(Note 4)
- 230 300 nC
μA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 44 98 ns
Turn-Off Delay Time - 213 436 ns
Turn-Off Fall Time - 43 96 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
= 24.3 A, RG = 25Ω, Starting TJ = 25°C
2. I
AS
3. I
≤ 72.8 A, di/dt ≤ 1200A/μs, VDD ≤ 380V, Starting TJ = 25°C
SD
4. Essentially Independent of Operating Temp erature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 76 A
Maximum Pulsed Drain to Source Diode Forward Current - - 228 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.8 - μC
= 380V, ID = 38A
V
DD
= 4.7Ω
R
G
(Note 4)
= 0V, I
GS
V
= 0V, I
GS
/dt = 100A/μs
dI
F
= 38A - - 1.2 V
SD
= 38A
SD
-51112ns
- 200 - ns
FCH76N60NF Rev. A2
2
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Page 3
Typical Performance Characteristics
2468
1
10
100
500
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.1 1 10 20
2
10
100
300
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
VGS = 15V
10V
8V
6V
5.5V
5V
4.5V
0.0 0.5 1.0 1.5
1
10
100
400
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 50 100 150 200 250
25
30
35
40
45
50
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.01 0.1 1 10 100 600
1
10
10
2
10
3
10
4
10
5
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 60 120 180 240
0
2
4
6
8
10
*Note: ID = 38A
VDS = 120V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FCH76N60NF 600V N-Channel MOSFET, FRFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FCH76N60NF Rev. A2
3
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Typical Performance Characteristics (Continued)
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. V
GS
= 10V
2. I
D
= 38A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0
20
40
60
80
I
D
, Drain Current [A]
TC, Case Temperature [oC]
1 10 100 1000
0.01
0.1
1
10
100
1000
30μs
100μs
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25oC
2. T
J
= 150oC
3. Single Pulse
DC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
0.3
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θJC
(t) = 0.23oC/W Max.
2. Duty Factor, D = t
1/t2
3. TJM - TC = PDM * Z
θJC
(t)
0.5
Single pulse
Thermal Response [Z
θJC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
FCH76N60NF 600V N-Channel MOSFET, FRFET
Figure 11. Transient Thermal Response Curve
FCH76N60NF Rev. A2
4
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Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCH76N60NF 600V N-Channel MOSFET, FRFET
FCH76N60NF Rev. A2
5
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Page 6
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recoverydv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•ISDcontrolled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recoverydv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
FCH76N60NF 600V N-Channel MOSFET, FRFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCH76N60NF Rev. A2
6
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Page 7
Mechanical Dimensions
FCH76N60NF 600V N-Channel MOSFET, FRFET
TO-247-3L
FCH76N60NF Rev. A2
Dimensions in Millimeters
7
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Page 8
TRADEMARKS
®
The following includes registered and unregistered trademarks and service marks, owned by Fair child Semiconductor and/or its glob al subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
®
*
®
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
max™
G
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
SM
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®*
®
®
The Power Franchise
The Right Technology for Your Success™
®
®
TinyBoost™
TinyBuck™
™
®
®
®
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FCH76N60NF 600V N-Channel MOSFET, FRFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the i ndustry. All manufactures of semicond uctor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many proble ms such as loss of brand reputation , substa ndard perfo rmance, faile d
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either d irectly from Fairchild o r from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FCH76N60NF Rev. A2
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplement ary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
8
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Rev. I51
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