Page 1
FCH47N60N 600V N-Channel MOSFET
FCH47N60N
N-Channel MOSFET
600V, 47A, 62mΩ
Features
•R
• Ultra Low Gate Charge ( Typ.Q
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
= 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A
DS(on)
g
=115nC)
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
May 2010
TM
SupreMOS
D
G
G
D
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 141 A
Single Pulsed Avalanche Energy (Note 2) 3068 mJ
Avalanche Current 15.7 A
Repetitive Avalanche Energy 3.7 mJ
MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TO-247
S
o
= 25
C unless otherwise noted
C
-Continuous (T
-Continuous (T
(T
= 25oC) 368 W
C
- Derate above 25
= 25oC) 47
C
= 100oC) 29.7
C
o
C2.94W/
300
Thermal Characteristics
Symbol Parameter Ratings Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.34
Thermal Resistance, Case to Heat Sink (Typical) 0.24
Thermal Resistance, Junction to Ambient 40
A
o
C
o
C
o
C
o
C/WR
©2010 Fairchild Semiconductor Corporation
FCH47N60N Rev. A
www.fairchildsemi.com1
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCH47N60N FCH47N60N TO-247 - - 30
FCH47N60N 600V N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 1mA, Referenced to 25oC - 0.78 - V/oC
D
V
= 480V, V
DS
= 480V, V
V
DS
= 0V - - 10
GS
= 0V, TC = 125oC - - 100
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA2-4V
Static Drain to Source On Resistance VGS = 10V, ID = 23.5A 51.5 62.0 mΩ
Forward Transconductance VDS = 40V, ID = 23.5A 56 S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
eff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 511 pF
C
oss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 200 270 pF
Reverse Transfer Capacitance - 2.5 4.0 pF
= 100V, VGS = 0V
V
DS
f = 1MHz
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 108 pF
Total Gate Charge at 10V
V
= 380V, ID = 23.5A,
Gate to Source Gate Charge - 21 nC
Gate to Drain “Miller” Charge - 34 nC
DS
V
= 10V
GS
(Note 4)
ESR Equivalent Series Resistance(G-S) Drain Open - 0.9 Ω
- 5037 6700 pF
- 115 151 nC
μA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 9 28 ns
Turn-Off Delay Time - 135 280 ns
Turn-Off Fall Time - 22 54 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
= 15.7A, RG = 25Ω, Starting TJ = 25°C
2. I
AS
3. I
≤ 47A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C
SD
4. Essentially Independent of Operating Temp erature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 47 A
Maximum Pulsed Drain to Source Diode Forward Current - - 141 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 12 - μC
= 380V, ID = 23.5A
V
DD
R
= 4.7Ω
GEN
(Note 4)
= 0V, I
GS
= 0V, I
V
GS
dI
/dt = 100A/μs
F
= 23.5A - - 1.2 V
SD
= 23.5A
SD
-1132ns
- 495 - ns
FCH47N60N Rev. A
2
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Page 3
Typical Performance Characteristics
FCH47N60N 600V N-Channel MOSFET
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
300
VGS = 15V
10V
8V
100
6V
5V
10
, Drain Current[A]
D
I
1
0.1 1 10 30
*Notes:
1. 250
2. T
μs Pulse Test
= 25oC
C
VDS, Drain-Source Voltage[V]
500
100
150oC
10
, Drain Current[A]
D
I
1
2468
VGS, Gate-Source Voltage[V]
-55oC
25oC
*Notes:
1. V
2. 250
= 20V
DS
μs Pulse Test
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
140
120
100
[mΩ],
80
DS(ON)
R
VGS = 10V
60
Drain-Source On-Resistance
*Note: TC = 25oC
40
0 40 80 120 160
ID, Drain Current [A]
VGS = 20V
400
100
150oC
10
, Reverse Drain Current [A]
S
I
1
0.40.60.81.01.21.4
25oC
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
10
10
10
Capacitances [pF]
10
1
FCH47N60N Rev. A
5
4
3
2
*Note:
1. V
= 0V
GS
2. f = 1MH z
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
rss
= C
gd
gd
C
oss
C
iss
C
rss
0.1 1 10 100 600
VDS, Drain-Source Voltag e [V]
10
8
6
4
, Gate-Source Voltage [V]
GS
V
2
0
0306090120
3
VDS = 120V
= 300V
V
DS
= 480V
V
DS
*Note: ID = 23.5A
Qg, Total Ga te Charge [n C]
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Page 4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
1.1
3.0
2.5
2.0
FCH47N60N 600V N-Channel MOSFET
1.0
, [Normalized]
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
*Notes:
1. V
2. I
TJ, Junction Temperature [oC]
= 0V
GS
= 1mA
D
1.5
, [Normalized]
1.0
DS(on)
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 50 100 150 200
*Notes:
1. V
2. I
TJ, Junction Temperature [oC]
= 10V
GS
= 23.5A
D
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
1000
100
100μs
10
, Drain Current [A]
I
Operation in This Area
1
is Limited by R
D
*Notes:
1. T
0.1
2. T
3. Single Pulse
0.01
1 10 100 1000
= 25oC
C
= 150oC
J
10ms
DS(on)
VDS, Drain-Source Voltage [V]
1ms
DC
10μs
50
40
30
20
, Drain Current [A]
D
I
10
0
25 50 75 100 125 150
TC, Case Temperatu re [oC]
Figure 11. Transient Thermal Response Curve
1
FCH47N60N Rev. A
]
θJC
Thermal Response [Z
0.1
0.01
0.001
0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
-5
10
P
DM
t
1
t
*Notes:
1. Z
θJC
2. Duty Fact or, D = t
3. TJM - TC = PDM * Z
-4
10
-3
10
-2
10
-1
10
2
(t) = 0.24oC/W Max.
1/t2
θJC
110
(t)
Rectangular Pulse Duration [sec]
4
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Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FCH47N60N 600V N-Channel MOSFET
FCH47N60N Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
5
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Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
g
g
+
+
V
V
DS
DS
_
_
L
LL
Sam e Type
Sam e Type
as DUT
as DUT
• dv/dt controlled by R
• dv/dt controlled by R
•ISDcontrolled by pulse period
•ISDcontrolled by pulse period
G
G
V
V
GS
GS
R
R
Driver
Driver
G
G
DUT
DUT
I
I
SD
SD
V
V
DD
DD
FCH47N60N 600V N-Channel MOSFET
V
V
GS
GS
( D riv er )
( D riv er )
I
I
SD
SD
( DUT )
( DUT )
V
V
DS
DS
( DUT )
( DUT )
G ate Pulse W idth
G ate Pulse W idth
G ate Pulse W idth
--------------------------
--------------------------
--------------------------
D =
D =
D =
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
IFM, Body Diode Forw ard Current
IFM, Body Diode Forw ard Current
I
I
RM
RM
Body Diode Reverse Current
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
V
V
SD
SD
Body Diode
Body Diode
e Drop
Forw ard Volta
Forw ard Volta
e Drop
di/dt
di/dt
10V
10V
V
V
DD
DD
FCH47N60N Rev. A
6
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Page 7
Mechanical Dimensions
FCH47N60N 600V N-Channel MOSFET
TO-247-3L
FCH47N60N Rev. A
Dimensions in Millimeters
7
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Page 8
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®
tm
tm
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intended to be an exhaustive list of all such trademarks.
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™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.
FCH47N60N 600V N-Channel MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
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intended for surgical implant into the bo dy or ( b) su pport or sustai n life ,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Forma t ive / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FCH47N60N Rev. A
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
8
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