Datasheet fch47n60f Datasheet

FCH47N60F _F133

G

S

D

TO-247

D

G

S

600V N-Channel MOSFET

FCH47N60F _F133 600V N-Channel MOSFET

February

TM

SuperFET

Features

•650V @TJ = 150°C

•Typ. R

• Fast Recovery Type ( t

• Ultra Low Gate Charge (typ. Q

• Low Effective Output Capacitance (typ. C

• 100% avalanche tested

DS(on)

= 0.062Ω

= 240ns)

rr

= 210nC)

g

eff. = 420pF)

oss

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.

This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.

Absolute Maximum Ratings

Symbol Parameter FCH47N60F Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)

Drain Current - Pulsed
Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

- Continuous (T

- Derate above 25°C

= 100°C)

C

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

47

29.7
141

1800 mJ

47 A

41.7 mJ

50 V/ns

417

3.33

300 °C

A
A

A

W

W/°C

Thermal Characteristics

Symbol Parameter Typ. Max. Unit

R

θJC

R

θCS

R

θJA

©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCH47N60F _F133 Rev. A.

Thermal Resistance, Junction-to-Case -- 0.3 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 41.7 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCH47N60F FCH47N60F_F133 TO-247 - - 30

FCH47N60F _F133 600V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV
/ ΔT

BV

DS

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

C

oss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
≤ 47A, di/dt ≤ 1,200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V

= 0V, ID = 250μA, TJ = 150°C -- 650 -- V

V

GS

Breakdown Voltage Temperature

DSS

Coefficient

J

Drain-Source Avalanche Breakdown
Voltage

Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

I

= 250μA, Referenced to 25°C--0.6--V/°C

D

VGS = 0V, ID = 47A

V

= 480V, TC = 125°C

DS

-- 700 -- V

--

--

--

--

10

100μAμA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA3.0--5.0V
Static Drain-Source

On-Resistance
Forward Transconductance VDS = 40V, ID = 23.5A

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 3200 4200 pF

V

= 10V, ID = 23.5A -- 0.062 0.073 Ω

GS

(Note 4)

-- 40 -- S

-- 5900 8000 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 250 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 160 -- pF

eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 420 -- pF

Turn-On Delay Time VDD = 300V, ID = 47A

R

= 25Ω

Turn-On Rise Time -- 210 450 ns

G

-- 185 430 ns

Turn-Off Delay Time -- 520 1100 ns
Turn-Off Fall Time -- 75 160 ns
Total Gate Charge VDS = 480V, ID = 47A

V

= 10V

Gate-Source Charge -- 38 -- nC

GS

Gate-Drain Charge -- 110 - - nC

(Note 4, 5)

-- 210 270 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A -- -- 1 . 4 V
Reverse Recovery Time VGS = 0V, IS = 47A

dI

/dt =100A/μs (Note 4)

Reverse Recovery Charge -- 2.04 -- μC

, Starting TJ = 25°C

DSS

F

-- 240 -- ns

FCH47N60F _F133 Rev. A.

2 www.fairchildsemi.com

Typical Performance Characteristics

246810

10

0

10

1

10

2

- Note

1. V

DS

= 40V

2. 250

μs Pulse Test

-55°C

150°C

25°C

I

D

, Drain Current [A]

VGS , Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

0 20 40 60 80 100 120 140 160 180 200

0.00

0.05

0.10

0.15

0.20

0.25

VGS = 20V

VGS = 10V

* Note : TJ = 25°C

R

DS(ON)

[Ω],Drain-Source On-Resistance

ID, Drain Current [A]

0.20.40.60.81.01.21.41.6

10

0

10

1

10

2

25°C

150°C

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

I

DR

, Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

10

-1

10

0

10

1

0

5000

10000

15000

20000

25000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0 50 100 150 200 250

0

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

* Note : ID = 47A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Ch arge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

FCH47N60F _F133 600V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FCH47N60F _F133 Rev. A.

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Typical Performance Characteristics (Continued)

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

* Notes :

1. V

GS

= 0 V

2. I

D

= 250μA

BV

DSS

, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [°C]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. V

GS

= 10 V

2. I

D

= 23.5 A

R

DS(ON)

, (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [°C]

10

0

10

1

10

2

10

3

10

-1

10

0

10

1

10

2

Operation in This Area
is Limited by R

DS(on)

DC

10 ms

1 ms

100 μs

* Notes :

1. T

C

= 25°C

2. T

J

= 150°C

3. Single Pulse

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 150

0

10

20

30

40

50

I

D

, Drain Current [A]

TC, Case Temperature [°C]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

* Notes :

1. Z

θJC

(t) = 0.3° C/W Max.

2. D uty F a c to r, D = t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z

θJC

(t), Thermal Response

t1, Square Wave Pulse Duration [sec]

t

1

P

DM

t

2

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

FCH47N60F _F133 600V N-Channel MOSFET

FCH47N60F _F133 Rev. A.

Figure 10. Transient Thermal Response Curve

4 www.fairchildsemi.com

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FCH47N60F _F133 600V N-Channel MOSFET

FCH47N60F _F133 Rev. A.

Unclamped Inductive Switching Test Circuit & Waveforms

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FCH47N60F _F133 600V N-Channel MOSFET

FCH47N60F _F133 Rev. A.

6 www.fairchildsemi.com

Mechanical Dimensions

TO-247AB (FKS PKG CODE 001)

FCH47N60F _F133 600V N-Channel MOSFET

FCH47N60F _F133 Rev. A.

Dimensions in Millimeters

7 www.fairchildsemi.com

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FCH47N60F _F133 600V N-Channel MOSFET

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Definition of Terms

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains specifications on a product that is discontinued by Fairchil d
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FCH47N60F _F133 Rev. A.

Rev. I35