Page 1
FCB20N60 600V N-Channel MOSFET
FCB20N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
•Typ. R
• Ultra low gate charge (typ. Q
• Low effective output capacitance (typ. C
• 100% avalanche tested
• RoHS Compliant
DS(on)
= 0.15Ω
= 75nC)
g
.eff = 165pF)
oss
D
December 2008
SuperFET
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
D
{
{
z
z
z
G
{
{
z
z
z
TM
G
S
{
{
S
Absolute Maximum Ratings
Symbol Parameter FCB20N60 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
20
12.5
60
690 mJ
20 A
20.8 mJ
4.5 V/ns
208
1.67
300 °C
Thermal Characteristics
Symbol Parameter FCB20N60 Unit
R
θJC
* Thermal Resistance, Junction-to-Ambient* 40 °C/W
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount
Thermal Resistance, Junction-to-Case 0.6 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
A
A
A
W
W/°C
©2008 Fairchild Semiconductor Corporation
FCB20N60 Rev. A3
1
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Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCB20N60 FCB20N60 D2-PAK 330mm 24m 800
FCB20N60 600V N-Channel MOSFET
Electrical Characteristics
TC = 25°C unless other wise not ed
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
BV
DS
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
= 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BV
3. I
SD
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V
= 0V, ID = 250µA, TJ = 150°C--650--V
V
GS
Breakdown Voltage Temperature
DSS
Coefficient
J
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V
= 250µA, Referenced to 25°C--0.6--V/°C
I
D
= 0V, ID = 20A -- 700 -- V
V
GS
= 480V, TC = 125°C
V
DS
--
--
--
--
1
10
µA
µA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 10A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 1280 1665 pF
= 10V, ID = 10A -- 0.15 0.19 Ω
V
GS
(Note 4)
-- 17 -- S
-- 2370 3080 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 95 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF
eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF
Turn-On Delay Time VDD = 300V, ID = 20A
= 25Ω
R
Turn-On Rise Time -- 140 290 ns
G
-- 62 135 ns
Turn-Off Delay Time -- 230 470 ns
Turn-Off Fall Time -- 65 140 ns
Total Gate Charge VDS = 480V, ID = 20A
= 10V
V
Gate-Source Charge -- 13.5 18 nC
GS
Gate-Drain Charge -- 36 -- nC
(Note 4, 5)
-- 75 98 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 20A
/dt =100A/µs
dI
Reverse Recovery Charge -- 10.5 -- µC
, Starting TJ = 25°C
DSS
F
(Note 4)
-- 530 -- ns
FCB20N60 Rev. A3
2
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Page 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
2
10
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
1
10
Bottom : 5.5 V
0
, Drain Current [A]
10
D
I
-1
10
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
0.4
2
10
1
10
, Drain Current [A]
D
0
I
Notes :
1. 250
µ
s Pulse Test
= 25°C
2. T
C
0
10
1
10
10
246810
150°C
25°C
-55°C
VGS , Gate-Source Voltage [V]
Note
1. V
2. 250
DS
and Temperatue
2
10
= 40V
µ
s Pulse Test
FCB20N60 600V N-Channel MOSFET
0.3
[O ],
0.2
DS(ON)
R
0.1
Drain-Source On-Resistance
0.0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
ID, Drain Current [A]
VGS = 10V
VGS = 20V
Note : TJ = 25°C
1
10
10
, Reverse Drain Current [A]
DR
I
0
150°C
25°C
Notes :
1. V
2. 250
= 0V
GS
µ
0.20.40.60.81.01.21.41.6
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10000
9000
8000
7000
6000
5000
4000
3000
Capacitanc e [pF]
2000
1000
0
-1
10
C
C
iss
C
rss
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
oss
Notes :
1. V
= 0 V
GS
2. f = 1 MHz
0
10
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 102030 4050607080
QG, Total Gate Charge [nC]
VDS = 100V
VDS = 250V
VDS = 400V
Note : ID = 20A
s Pulse Test
FCB20N60 Rev. A3
3
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Page 4
FCB20N60 600V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.2
1.1
1.0
, (Normalized)
BV
DSS
0.9
Notes :
1. V
2. I
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
TJ, Junction Temperature [°C]
= 0 V
GS
= 250µA
D
3.0
2.5
2.0
1.5
, (Normalized)
DS(ON)
1.0
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature [°C]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
10
10
10
, Drain Current [A]
D
I
10
10
Operation in This Area
2
is Limited by R
1
0
Notes :
1. T
-1
C
2. T
J
3. Single Pulse
-2
0
10
DS(on)
= 25°C
= 150°C
1
10
VDS, Drain-Source Voltage [V]
100 us
25
20
1 ms
10 ms
DC
2
10
3
10
15
10
, Drain Current [A]
D
I
5
0
25 50 75 100 125 150
TC, Case Temperature [°C]
Notes :
1. V
2. I
GS
= 20 A
D
= 10 V
FCB20N60 Rev. A3
Figure 11. Transient Thermal Response Curve
0
10
D=0.5
0.2
-1
10
0.1
0.05
0.02
(t), Thermal Response
0.01
JC
θ
Z
-2
10
-5
10
single pulse
-4
10
-3
10
t1, Sq uare W ave P u lse Dura tion [sec]
N otes :
1. Z
θ
JC
2. Duty F actor, D=t
3. TJM - TC = PDM * Z
P
DM
-2
10
-1
10
4
(t) = 0.6 °C/W Max.
1/t2
(t)
θ
JC
t
1
t
2
0
10
1
10
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Page 5
12V
12V
200nF
200nF
3mA
3mA
50KΩ
50KΩ
V
V
Gate Charge Test Circuit & Waveform
V
V
GS
GS
GS
300nF
300nF
Same Type
Same Type
as DUT
as DUT
DUT
DUT
V
V
DS
DS
GS
10V
10V
Resistive Switching Test Circuit & Waveforms
FCB20N60 600V N-Channel MOSFET
Q
Q
g
g
Q
Q
gs
gs
Q
Q
gd
gd
Charge
Charge
10V
10V
10V
10V
R
R
L
DUT
DUT
L
V
V
DD
DD
V
V
DS
DS
V
V
GS
GS
R
R
G
G
V
V
DS
DS
90%
90%
10%
10%
V
V
GS
GS
t
t
d(on)tr
d(on)tr
t
t
on
on
t
t
d(off)
d(off)
t
t
f
f
t
t
off
off
Unclamped Inductive Switching Test Circuit & Waveforms
BV
BV
DSS
L
LL
V
V
DS
DS
BV
BV
DSS
V
V
DSS
I
I
AS
AS
DD
DD
I
IDI
D
D
R
R
G
G
DUT
DUT
t
t
p
p
V
V
DD
DD
1
1
1
1
----
----
----
----
E
=LI
E
=LI
=LI
E
AS
AS
AS
2
2
2
2
2
2
2
AS
AS
AS
I
I
(t)
(t)
D
D
t
t
p
p
DSS
--------------------
-------------------BV
BV
DSS-VDD
DSS-VDD
Time
Time
V
(t)
V
(t)
DS
DS
FCB20N60 Rev. A3
5
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Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
DUT
I
I
SD
SD
Driver
Driver
R
R
G
G
V
V
GS
GS
+
V
V
DS
DS
_
_
L
LL
Same Type
Same Type
as DUT
as DUT
• dv/dt controlled by R
• dv/dt controlled by R
•ISDcontrolled by pulse period
•ISDcontrolled by pulse period
G
G
FCB20N60 600V N-Channel MOSFET
V
V
DD
DD
V
V
GS
GS
( Driver )
( Driver )
I
I
SD
SD
( DUT )
( DUT )
V
V
DS
DS
( DUT )
( DUT )
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
--------------------------
--------------------------
--------------------------
D =
D =
D =
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
IFM, Body Diode Forward Current
IFM, Body Diode Forward Current
I
I
RM
RM
Body Diode Reverse Current
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
V
V
SD
SD
Body Diode
Body Diode
Forward Voltage Drop
Forward Voltage Drop
di/dt
di/dt
10V
10V
V
V
DD
DD
FCB20N60 Rev. A3
6
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Page 7
Mechanical Dimensions
FCB20N60 600V N-Channel MOSFET
D2-PAK
FCB20N60 Rev. A3
Dimensions in Millimeters
7
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Page 8
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intended to be an exhaustive list of all such trademarks.
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FAST
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®
®
tm
®
®
®
®
*
®
F-PFS™
* EZSWITCH™ and FlashWriter
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
FRFET
Global Power Resource
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Green FPS™ e-Series™
GTO™
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MicroFET™
MicroPak™
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OPTOPLANAR
PDP SPM™
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PowerXS™
®
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tm
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SM
Programmable Active Droop™
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QS™
Quiet Series™
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™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FCB20N60 600V N-Channel MOSFET
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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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intended for surgical implant into the body or (b) sup port or sust ain life ,
and (c) whose failure to perform when properly used in accord ance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
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www.fairchildsemi.com, under Sales Support
.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed F ull Production
Obsolete Not In Production
FCB20N60 Rev. A3
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only .
Rev. I37
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