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FCA35N60
600V N-Channel MOSFET
FCA35N60 N-Channel MOSFET
March 2009
TM
SuperFET
Features
• 650V @ TJ = 150°C
•Typ.R
• Ultra low gate charge ( Typ. Q
• Low effective output capacitance ( Typ. C
• 100% avalanche tested
DS(on)
= 0.079Ω
= 139nC )
g
.eff = 340pF )
oss
Description
SuperFETTM is Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
TO-3PN
GSD
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 600 V
Gate-Soure voltage ±30 V
D r a i n C u r r e n t
D r a i n C u r r e n t - P u l s e d (Note 1) 105 A
Single Pulsed Avalanche Energy (Note 2) 1455 mJ
Avalanche Current (Note 1) 35 A
Repetitive Avalanche Energy (Note 1) 31.25 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 312.5 W
C
- Derate above 25
= 25oC) 35
C
= 100oC) 22.2
C
o
C2.5W/
S
o
300
o
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case - 0.4
Thermal Resistance, Case-to-Heat Sink 0.24 -
Thermal Resistance, Junction to Ambient - 42
o
C/WR
A
o
C
C
C
©2009 Fairchild Semiconductor Corporation
FCA35N60 Rev. A
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FCA35N60 N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FCA35N60 FCA35N60 TO-3PN - - 30
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
I
= 250µA, VGS = 0V, TJ = 25oC 600 - - V
BV
DSS
∆BV
/ ∆T
BV
DS
I
DSS
I
GSS
DSS
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 17.5A - 0.079 0.098 Ω
Forward Transconductance VDS = 40V, ID = 17.5A - 28.8 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 340 - pF
C
oss
Q
g
Q
gs
Q
gd
ESR Equivalent Series Resistance (G-S) Drain Open, F= 1MHZ -1.4-Ω
Input Capacitance
Output Capacitance - 2380 3170 pF
Reverse Transfer Capacitance - 140 - pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz - 113 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 31 - nC
Gate to Drain “Miller” Charge - 69 - nC
D
= 250µA, VGS = 0V, TJ = 150oC- 650 - V
I
D
I
= 250µA, Referenced to 25oC-0.6-V/
D
V
= 0V, ID = 16A - 700 - V
GS
V
= 600V, V
DS
= 480V, TC = 125oC--10
V
DS
= 25V, VGS = 0V
V
DS
f = 1MHz
= 0V - - 1
GS
= 0V - - ±100 nA
DS
- 4990 6640 pF
- 139 181 nC
V
= 480V, ID = 35A
DS
V
= 10V
GS
(Note 4)
µA
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 120 250 ns
Turn-Off Delay Time - 105 220 ns
Turn-Off Fall Time - 73 155 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
= 17.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
2: I
AS
3: I
≤ 35A, di/dt ≤ 200A/µs, VDD ≤ BV
SD
4: Essentially Independent of Operating Temperature Typical Characteristics
FCA35N60 Rev. A
Maximum Continuous Drain to Source Diode Forward Current - - 35 A
Maximum Pulsed Drain to Source Diode Forward Current - - 105 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 16.3 - µC
, Starting TJ = 25°C
DSS
= 300V, ID = 35A
V
DD
R
= 4.7Ω
G
(Note 4)
= 0V, I
GS
= 0V, I
V
GS
dI
/dt = 100A/µs
F
= 35A - - 1.4 V
SD
= 35A
SD
2
-3478ns
- 614 - ns
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
200
V
= 15.0 V
GS
100
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
, Drain Current[A]
D
I
1
0.3
0.1 1 10 20
*Notes:
1. 250
2. T
µs Pulse Test
= 25oC
C
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.24
200
100
10
, Drain Current[A]
D
I
1
150oC
456789
-55oC
25oC
*Notes:
1. V
2. 250
= 20V
DS
µs Pulse Test
VGS, Gate-Source Voltage[V]
500
FCA35N60 N-Channel MOSFET
0.20
100
0.16
[Ω],
0.12
DS(ON)
R
0.08
VGS = 10V
VGS = 20V
Drain-Source On-Resistance
0.04
0 255075100125
*Note: TC = 25oC
ID, Drain Current [A]
10
, Reverse Drain Current [A]
S
I
1
150oC
25oC
*Notes:
1. VGS = 0V
2. 250
µs Pulse Test
0.2 0.4 0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
50000
10000
1000
*Note:
1. V
= 0V
100
Capacitances [pF]
10
GS
2. f = 1MHz
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
rss
= C
gd
gd
0.1 1 10 100 600
VDS, Drain-Source Voltage [V]
C
iss
C
oss
C
rss
10
VDS = 100V
= 250V
V
DS
= 400V
V
8
DS
6
4
, Gate-Source Voltage [V]
GS
V
2
0
04080120160
*Note: ID = 35A
Qg, Total Gate Charge [nC]
FCA35N60 Rev. A
3
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
1.15
3.0
FCA35N60 N-Channel MOSFET
1.10
1.05
1.00
, [Normalized]
DSS
0.95
BV
0.90
Drain-Source Breakdown Voltage
0.85
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
*Notes:
1. V
2. I
D
= 0V
GS
= 250µA
2.5
2.0
1.5
, [Normalized]
1.0
DS(on)
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 50 100 150 200
*Notes:
1. V
2. I
TJ, Junction Temperature [oC]
GS
D
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
300
100
1ms
10
Operation in This Area
is Limited by R
1
, Drain Current [A]
D
I
0.1
0.01
1 10 100 1000
DS(on)
*Notes:
1. T
2. T
3. Single Pulse
DC
= 25oC
C
= 150oC
J
10ms
VDS, Drain-Source Voltage [V]
100µs
10µs
vs. Case Temperature
40
30
20
, Drain Current [A]
D
I
10
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
= 10V
= 17.5A
FCA35N60 Rev. A
]
θJC
Thermal Response [Z
0.001
0.6
0.1
0.01
Single pulse
-5
10
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
*Notes:
1. Z
(t) = 0.4oC/W Max.
θJC
2. Duty Factor, D= t
3. TJM - TC = PDM * Z
-4
10
-3
10
-2
10
-1
10
1/t2
θJC
110
Rectangular Pulse Duration [sec]
4
(t)
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Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FCA35N60 N-Channel MOSFET
FCA35N60 Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
5
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Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCA35N60 N-Channel MOSFET
FCA35N60 Rev. A
6
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Page 7
Mechanical Dimensions
FCA35N60 N-Channel MOSFET
TO-3PN
FCA35N60 Rev. A
7
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Page 8
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THEREIN, WHICH COVERS THESE PRODUCTS.
FCA35N60 N-Channel MOSFET
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FCA35N60 Rev. A
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I38
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