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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP Epitaxial Planar Silicon Composite Transistor
Low-Frequency General-Purpose Amp,
Driver Applications
Ordering number:EN3964
FC149
Features
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC149 is formed with two chips, being equivalent to the 2SA1813, placed in one package.
· Adoption of FBET process.
· High DC current gain (hFE=500 to 1200).
· High V
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
EBO
(V
EBO
Package Dimensions
unit:mm
2067A
[FC149]
≥15V).
1:Emitter 1
2:Base 1
3:Collector 2
4:Emitter 2
5:Base 2
6:Collector 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
noitapissiDlatoTP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
oitaRniaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
Note:The specifications shown above are for each individual transistor.
Marking:149
OBC
OEC
OBE
C
PC
B
C
T
OBC
OBE
EF
EF
)egral
T
tinu1 002Wm
V
V
V
/llams(
V
V
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V02–=
BC
BE
EC
EC
EC
BC
0=1.0–Aµ
E
I,V01–=
0=1.0–Aµ
E
I,V5–=
Am1–=0050080021
C
I,V5–=
Am1–=7.089.0
C
I,V01–=
Am01=012zHM
C
zHM1=f,V01–=6.2Fp
I,Am05–=
Am1–=51.0–3.0–V
B
I,Am05–=
Am1–=87.0–1.1–V
B
I,Aµ01–=
0=03–V
E
R,Am1–=
=∞ 52–V
EB
I,Aµ01–=
=0 51–V
C
SANYO:CP6
sgnitaR
nimpytxam
03–V
52–V
51–V
051–Am
003–Am
03–Am
003Wm
˚C
˚C
tinU
52098HA (KT)/53094TH (KOTO) 8-7599 No.3964-1/3
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FC149
No.3964-2/3
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FC149
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3964-3/3
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