
 * High case dielectric strength
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load. 
For capacitive load, derate current by 20%.
 = 1 Amp., Irr = 0.25 Amp.
      2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
 * High surge current capability 
 * High reliability 
 * Low reverse current 
 * Low forward voltage drop 
 * Fast switching for high efficiency 
 * Ideal for printed circuit board
 * Case : Reliable low cost construction 
        utilizing molded plastic technique 
 * Epoxy : UL94V-O rate flame retardant 
 * Lead : Axial lead solderable per 
        MIL - STD 202 , Method 208 guaranteed 
 * Polarity : Polarity symbols marked on case 
 * Mounting position : Any 
 * Weight :  6.1 grams
FAST RECOVERY
BR10
0.520 (13.20)
φ 0.158 (4.00)
0.290 (7.36)
0.210 (5.33)
0.052 (1.32)
0.048 (1.22)
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
0.480 (12.20) 
AC
0.77 (19.56)
0.73 (18.54)
AC
0.75 (19.1) 
Min.
RATING
  Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts 
  Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts 
  Maximum DC Blocking Voltage V 
  Maximum Average Forward Current Tc = 50 °C I 
  Peak Forward Surge Current Single half sine wave 
  Superimposed on rated load (JEDEC Method) IFSM 200 Amps. 
  Current Squared Time at t < 8.3 ms. 
  Maximum Forward Voltage drop per Diode at IF = 4.0 Amps. V 
  Maximum DC Reverse Current     Ta = 25 °C I 
  at Rated DC Blocking Voltage      Ta = 100 °C IR(H) 200 
  Maximum Reverse Recovery Time (Note 1) Trr 150 250 500 ns 
  Typical Thermal Resistance per diode (Note 2) 
  Operating Junction Temperature Range T 
  Storage Temperature Range T
SYMBOL
DC
F(AV)
F
R
RθJC
J
STG
50 100 200 400 600 800 1000 Volts
8.0 Amps.
160
1.3 Volts 
10
2.5
 - 50 to + 150
 - 50 to + 150
UNITS
µ
A
µ
A
°
C/W
°
C
°
C

  RATING AND CHARACTERISTIC CURVES ( FBR800 - FBR810 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω 10 Ω
50 Vdc
(approx)
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
         2. Rise time = 10 ns max., Source Impedance = 50 ohms.
         3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT FIG.3 - MAXIMUM NON-REPETITIVE PEAK 
      RECTIFIED CURRENT       FORWARD SURGE CURRENT
8
6
4
CURRENT, AMPERES
2
AVERAGE FORWARD OUTPUT 
60Hz RESISTIVE OR INDUCTIVE LOAD
    0 25 50 75 100 125 150 175      1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C)
D.U.T.
1 Ω
GENERATOR
OSCILLOSCOPE
( NOTE 1 )
PULSE
( NOTE 2 )
200
120
80
CURRENT, AMPERES
40
PEAK FORWARD SURGE 
NUMBER OF CYCLES AT 60Hz
Trr
SET TIME BASE FOR 50/100 ns/cm
Tc = 55 °C
FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 
       PER DIODE       PER DIODE
100 10
Pulse Width = 300 µs
2% Duty Cycle
10
1.0 0.1
0.1
TJ = 25 °C
 FORWARD CURRENT, AMPERES
1.0
0.01
REVERSE CURRENT, MICROAMPERES
PERCENT OF RATED REVERSE
TJ = 100 °C
TJ = 25 °C
 VOLTAGE, (%)
0.01 
    0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
 FORWARD VOLTAGE, VOLTS