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SOT-227
PRODUCT SUMMARY
V
DSS
DC 180 A
I
D
R
DS(on)
Type Modules - MOSFET
Package SOT-227
Power MOSFET, 180 A
FEATURES
• Fully isolated package
• Easy to use and parallel
• Very low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low drain to case capacitance
• Low internal inductance
• UL pending
• Compliant to RoHS directive 2002/95/EC
100 V
0.0065
DESCRIPTION
5th Generation, high current density Power MOSFETs are
paralled into a compact, high power module providing the
best combination of switching, ruggedized design, very low
on resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
and easy connection to the SOT-227 package contribute to
its universal acceptance throughout the industry.
FB180SA10P
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Continuous drain current at V
Pulsed drain current I
Power dissipation P
Linear derating factor 2.7 W/°C
Gate to source voltage V
Single pulse avalanche energy E
Avalanche current I
Repetitive avalanche energy E
Peak diode recovery dV/dt dV/dt
Operating junction and storage temperature range T
Insulation withstand voltage (AC-RMS) V
Mounting torque M4 screw 1.3 Nm
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8)
(2)
Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A (see fig. 12)
(3)
ISD 180 A, dI/dt 83 A/μs, VDD V
Document Number: 94541 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-Jul-10 [email protected]
10 V I
GS
, TJ 150 °C
(BR)DSS
D
(1)
DM
D
GS
(2)
AS
(1)
AR
(1)
AR
, T
J
Stg
ISO
TC = 25 °C 180
= 100 °C 120
C
720
TC = 25 °C 480 W
± 20 V
700 mJ
180 A
48 mJ
(3)
5.7 V/ns
- 55 to + 150 °C
2.5 kV
AT
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FB180SA10P
Vishay Semiconductors
Power MOSFET, 180 A
THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case R
Case to sink, flat, greased surface R
thJC
thCS
-0.26
0.05 -
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V(
Breakdown voltage temperature
coefficient
V
Static drain to source on-resistance R
Gate threshold voltage V
Forward transconductance g
Drain to source leakage current I
Gate to source forward leakage I
Total gate charge Q
Gate to drain ("Miller") charge Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Internal source inductance L
Input capacitance C
Reverse transfer capacitance C
Note
(1)
Pulse width 300 μs, duty cycle 2 %
BR)DSS
(BR)DSS
DS(on)
GS(th)
fs
DSS
GSS
g
gs
- 110 165
gd
d(on)
r
d(off)
-335-
f
S
iss
oss
rss
VGS = 0 V, ID = 250 μA 100 - - V
/TJReference to 25 °C, ID = 1 mA - 0.093 - V/°C
(1)
VGS = 10 V, ID = 180 A - 0.0065 -
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
VDS = 25 V, ID = 180 A 93 - - S
VDS = 100 V, VGS = 0 V
= 80 V, VGS = 0 V, TJ = 125 °C
V
DS
--50
- - 500
VGS = 20 V - - 200
V
= - 20 V - - - 200
GS
ID = 180 A
V
= 80 V
DS
V
= 10.0 V; see fig. 6 and 13
GS
VDD = 50 V
I
= 180 A
D
R
= 2.0(internal)
g
= 0.27, see fig. 10
R
D
(1)
(1)
- 250 380
-4060
-45-
-351-
-181-
Between lead, and center of die contact - 5.0 - nH
VGS = 0 V
= 25 V
V
DS
f = 1.0 MHz, see fig. 5
- 10 700 -
- 2800 -
- 1300 -
μA
nA
nCGate to source charge Q
ns
pFOutput capacitance C
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current
(body diode)
Pulsed source current (body diode) I
Diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Forward turn-on time t
SM
SD
rr
I
S
(1)
(2)
(2)
rr
on
MOSFET symbol
showing the integral
reverse p-n junction diode.
G
TJ = 25 °C, IS = 180 A, VGS = 0 V - - 1.3 V
TJ = 25 °C, IF = 180 A; dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 8)
(2)
Pulse width 300 μs, duty cycle 2 %
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2 [email protected]
, [email protected], [email protected] Revision: 30-Jul-10
D
- - 180
- - 720
S
- 300 450 ns
-2.63.9μC
A
Page 3
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4 5 6 7 8 9 10
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
180A
1 10 100
0
5000
10000
15000
20000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
FB180SA10P
Fig. 1 - Typical Output Characteristics
Power MOSFET, 180 A
Fig. 4 - Normalized On-Resistance vs. Temperature
Vishay Semiconductors
Fig. 2 - Typical Output Characteristics
Document Number: 94541 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-Jul-10 [email protected]
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
20
I =
180 A
D
V = 80V
DS
V = 50V
DS
V = 20V
15
10
5
GS
V , Gate-to-Source Voltage (V)
0
0 50 100 150 200 250 300 350 400
Q , Total Gate Charge (nC)
G
DS
FOR TEST CIRCUIT
SEE FIGURE
13
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
Page 4
FB180SA10P
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
°
T = 25 C
J
°
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
D.U.T.
10 V
+
-
V
DS
R
D
V
DD
R
G
V
GS
Vishay Semiconductors
Fig. 7 - Typical Source Drain Diode Forward Voltage
10000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
Power MOSFET, 180 A
200
175
150
125
100
D
I , Drain Current (A)
75
50
25
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig. 9 - Maximum Drain Current vs.
Case Temperature
100
D
I , Drain Current (A)I , Drain Current (A)
10
100us
1ms
10ms
°
= 25 C
C
°
T T= 150 C
J
Single Pulse
1
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
Fig. 8 - Maximum Safe Operating Area
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig. 10b - Switching Time Waveforms
Fig. 10a - Switching Time Test Circuit
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, [email protected], [email protected] Revision: 30-Jul-10
Page 5
0.01 Ω
D.U.T
L
+
-
Driver
A
15 V
20 V
R
G
V
DS
I
AS
t
p
V
DD
t
p
V
(BR)DSS
I
AS
FB180SA10P
Power MOSFET, 180 A
1
thJC
D = 0.50
(Z )
0.1
0.20
0.10
0.05
0.02
0.01
0.01
Thermal Response
0.001
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
Vishay Semiconductors
P
DM
t
1
t
2
1 2
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
1500
1200
TOP
BOTTOM
I
D
71A
100A
160A
Fig. 12a - Unclamped Inductive Test Circuit
900
600
300
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
°
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 94541 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-Jul-10 [email protected]
Fig. 13a - Basic Gate Charge Waveform
Page 6
FB180SA10P
+
-
+
+
+
-
-
-
• dV/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by duty factor "D"
• D.U.T. - Device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
1
2
4
3
R
G
V
DD
Vishay Semiconductors
Power MOSFET, 180 A
Current regulator
Same type as D.U.T.
50 kΩ
12 V
0.2 µF
V
GS
0.3 µF
3 mA
I
G
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
D.U.T.
I
+
V
DS
-
D
Fig. 13c - Peak Diode Recovery dV/dt Test Circuit
Driver Gate Drive
P.W.
D.U.T. I
Reverse
Recovery
Current
D.U.T. V
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Re-Applied
Voltage
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Period
Waveform
SD
Body Diode Forward
Current
Waveform
DS
Body Diode Forward Drop
Ripple ≤ 5%
di/dt
Diode Recovery
dv/dt
Fig. 14 - For N-Channel Power MOSFETs
, [email protected], [email protected] Revision: 30-Jul-10
D =
P. W .
Period
=10V
V
*
GS
V
DD
I
SD
Page 7
1 - Power MOSFET
2 - Generation 5 MOSFET silicon DBC construction
3 - Current rating (180 = 180 A)
4 - Single switch
5 - SOT-227
6 - Voltage rating (10 = 100 V)
- P = Lead (Pb)-free
7
Device code
51324
67
F B 180 S A 10 P
FB180SA10P
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
Power MOSFET, 180 A
CIRCUIT
Vishay Semiconductors
CIRCUIT DRAWING
D (3)
Single switch no diode S
G (2)
S (1-4)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037
Lead assignment
4
1
S
D
3
2
G
S
Document Number: 94541 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-Jul-10 [email protected]
Page 8
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
-A-
4
12
3
12.50 (0.492)
7.50 (0.295)
Ø 4.40 (0.173)
Ø 4.20 (0.165)
30.20 (1.189)
29.80 (1.173)
15.00 (0.590)
6.25 (0.246)
25.70 (1.012)
25.20 (0.992)
-B-
R full
Chamfer
2.00 (0.079) x 45°
2.10 (0.082)
1.90 (0.075)
8.10 (0.319)
7.70 (0.303)
4 x
2.10 (0.082)
1.90 (0.075)
-C-
0.12 (0.005)
12.30 (0.484)
11.80 (0.464)
MMM
0.25 (0.010)
CA B
4 x M4 nuts
Outline Dimensions
Vishay Semiconductors
SOT-227
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
www.vishay.com
Page 9
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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