Datasheet FB180SA10 Specification

l Fully Isolated Package
l Easy to Use and Parallel
l Very Low On-Resistance
l Dynamic dv/dt Rating
l Fully Avalanche Rated
l Simple Drive Requirements
l Low Drain to Case Capacitance
l Low Internal Inductance

G

Description

Fifth Generation, high current density HEXFETS are
paralled into a compact, high power module providing
the best combination of switching, ruggedized design,
very low ON resistance and cost effectiveness.

The isolated SOT-227 package is preferred for all
commercial - industrial applications at power
dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT­227 package contribute to its universal acceptance
throughout the industry.

PD- 91651C

FB180SA10

HEXFET® Power MOSFET

D

S

V

R

DS(on)

SOT-227

= 100V

DSS

= 0.0065W

ID = 180A

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 180
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 120 A
I

DM

PD @TC = 25°C Power Dissipation 480 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.7 V/ns
T

J

T

STG

V

ISO

Pulsed Drain Current  720

Linear Derating Factor 2.7 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 700 mJ
Avalanche Current 180 A
Repetitive Avalanche Energy 48 mJ

Operating Junction and -55 to + 150 °C
Storage Temperature Range
Insulation Withstand Voltage (AC-RMS) 2.5 kV
Mounting torque, M4 srew 1.3 N•m

Thermal Resistance

Parameter Typ. Max. Units

R

qJC

R

qCS

Junction-to-Case ––– 0.26
Case-to-Sink, Flat, Greased Surface 0.05 ––– °C/W

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2/1/99

FB180SA10

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

DV

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

s

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

/DT

Breakdown Voltage Temp. Coefficient ––– 0.093 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.0065 W VGS = 10V, ID = 108A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 93 ––– ––– S VDS = 25V, ID = 108A

Drain-to-Source Leakage Current

––– ––– 50

––– ––– 500 VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 100V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– 250 380 ID = 180A
Gate-to-Source Charge ––– 40 60 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– 110 165 VGS = 10.0V, See Fig. 6 and 13 
Turn-On Delay Time ––– 45 ––– VDD = 50V
Rise Time ––– 351 ––– ID = 180A
Turn-Off Delay Time ––– 181 ––– RG = 2.0W (Internal)

ns

Fall Time ––– 335 ––– RD = 0.27W, See Fig. 10 
Internal Source Inductance ––– 5.0 ––– nH Between lead,

and center of die contact
Input Capacitance ––– 10700 ––– VGS = 0V
Output Capacitance ––– 2800 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 1300 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

180

720

showing the

A

p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 180A, VGS = 0V 
Reverse Recovery Time ––– 300 450 ns TJ = 25°C, IF = 180A
Reverse Recovery Charge ––– 2.6 3.9 µC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25W, I

= 25°C, L =43µH

J

= 180A. (See Figure 12)

AS

 I

£ 180A, di/dt £83A/µs, V

SD

DD

£ V

(BR)DSS

TJ £ 150°C

 Pulse width £ 300µs; duty cycle £ 2%.

,

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FB180SA10

1000

100

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

4.5V

10

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

1000

°

T = 150 C

J

1000

100

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

4.5V

10

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output Characteristics

2.5

2.0

I =

D

180A

100

1.5

°

T = 25 C

J

1.0

10

D

I , Drain-to-Source Current (A)

V = 25V

DS

1

4 5 6 7 8 9 10

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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FB180SA10

20000

15000

10000

C, Capacitance (pF)

5000

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage

1000

°

T = 150 C

100

J

20

I =

180 A

D

V = 80V

DS

V = 50V

DS

V = 20V

15

10

5

GS

V , Gate-to-Source Voltage (V)

0

0 50 100 150 200 250 300 350 400

Q , Total Gate Charge (nC)

G

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA LIMITED

1000

BY R

DS(on)

10us

13

10

°

T = 25 C

J

1

SD

I , Reverse Drain Current (A)

V = 0 V

0.1

0.2 0.6 1.0 1.4 1.8

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

100

D

I , Drain Current (A)I , Drain Current (A)

10

°

= 25 C

C

T T= 150 C
Single Pulse

1

1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

100us

1ms

10ms

Forward Voltage

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200

175

150

125

100

FB180SA10

V

DS

V

GS

R

G

10V

Pulse Width £ 1 µs
Duty Factor £ 0.1 %

R

D.U.T.

D

+

V

DD

-

75

D

I , Drain Current (A)

50

25

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

Fig 9. Maximum Drain Current Vs.

t

d(on)tr

t

d(off)tf

Case Temperature

Fig 10b. Switching Time Waveforms

1

thJC

D = 0.50

0.1

0.20

0.10

0.05

0.01

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

0.001

0.00001 0.0001 0.001 0.01 0.1

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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FB180SA10

A

15V

DRIVER

+

-

R

G

20V

V

DS

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

1500

TOP

I

D

71A

100A

1200

900

V

DD

600

300

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature( C)

J

BOTTOM

160A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

V

-

D

Fig 13b. Gate Charge Test Circuit

DS

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FB180SA10

Peak Diode Recovery dv/dt Test Circuit



D.U.T

+



-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

· Low Stray Inductance



· Ground Plane

· Low Leakage Inductance
Current Transformer

-

-

· dv/dt controlled by R

G

· Driver same type as D.U.T.

· ISD controlled by Duty Factor "D"

· D.U.T. - Device Under Test

Period

D =

Period



P.W.

+

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFETS

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FB180SA10

SOT-227 Package Details

38.30 ( 1.508 )

4

1

37.80 ( 1.488 )

-A-

30.20 ( 1.189 )

29.80 ( 1.173 )
4X

Tube

8.10 ( .319 )

7.70 ( .303 )

4.40 (.173 )

4.20 (.165 )

12.50 ( .492 )

7.50 ( .295 )

2.10 ( .082 )

1.90 ( .075 )

3

6.25 ( .246 )

2

15.00 ( .590 )

CHA MFE R

2.00 ( .079 ) X 457

25.70 ( 1.012 )

25.20 ( .992 )

-B-

R FULL

0.25 ( .01 0 ) M C A M B M

2.10 ( .082 )

1.90 ( .075 )

-C-

0.12 ( .005 )

LEAD ASSIGMENTS

C

E

G

E

IGBT

A1

K2

4
1

K1

A2

HEXFRED

3
2

S

4

1

S

HEXFET

12.30 ( .484 )

11.80 ( .464 )

D

3
2

G

QUANTITY PER TUBE IS 10
M4 SR EW AND W AS HE R INCLU DE D

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http://www.irf.com/ Data and specifications subject to change without notice. 2/99

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