Page 1
SOT-227
PRODUCT SUMMARY
V
DSS
R
DS(on)
I
D
Type Modules - MOSFET
Package SOT-227
Power MOSFET, 57 A
FEATURES
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Dynamic dV/dt rating
• Fully avalanche rated
• Simple drive requirements
• Low gate charge device
• Low drain to case capacitance
• Low internal inductance
• UL pending
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
500 V
0.08 Ω
57 A
DESCRIPTION
Third Generation Power MOSFETs from Vishay HPP provide
the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 500 W. The low thermal resistance
of the SOT-227 contribute to its wide acceptance
throughout the industry.
FA57SA50LCP
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Continuous drain current at V
Pulsed drain current I
Power dissipation P
Linear derating factor 5.0 W/°C
Gate to source voltage V
Single pulse avalanche energy E
Avalanche current I
Repetitive avalanche energy E
Peak diode recovery dV/dt dV/dt
Operating junction and storage temperature range T
Insulation withstand voltage (AC-RMS) V
Mounting torque M4 screw 1.3 Nm
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
(2)
Starting TJ = 25 °C, L = 446 μH, Rg = 25 Ω, IAS = 57 A (see fig. 12)
(3)
ISD ≤ 57 A, dI/dt ≤ 200 A/μs, VDD ≤ V
10 V I
GS
, TJ ≤ 150 °C
(BR)DSS
DM
AR
J
AS
AR
, T
D
D
GS
ISO
TC = 25 °C 57
= 100 °C 36
C
(1)
TC = 25 °C 625 W
(2)
(1)
(1)
(3)
Stg
228
± 20 V
725 mJ
57 A
62.5 mJ
10 V/ns
- 55 to + 150 °C
2.5 kV
AT
Document Number: 94548 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 12-May-10 [email protected]
Page 2
FA57SA50LCP
Vishay Semiconductors
Power MOSFET, 57 A
THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case R
Case to sink, flat, greased surface R
thJC
thCS
-0.20
0.05 -
°C/W
ELECTRICAL CHARACTERISTCS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V
Breakdown voltage temperature coefficient ΔV
Static drain to source on-resistance R
Gate threshold voltage V
Forward transconductance g
Drain to source leakage current I
Gate to source forward leakage
Gate to source reverse leakage V
Total gate charge Q
Gate to drain ("Miller") charge Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Internal source inductance L
Input capacitance C
Reverse transfer capacitance C
(BR)DSS
(BR)DSS
DS(on)
GS(th)
fs
DSS
I
GSS
gs
gd
d(on)
r
d(off)
f
S
iss
oss
rss
g
Note
(1)
Pulse width ≤ 300 μs, duty cycle ≤ 2 %
VGS = 0 V, ID = 1.0 mA 500 - - V
/ΔTJReference to 25 °C, ID = 1 mA - 0.62 - V/°C
(1)
VGS = 10 V, ID = 34 A - - 0.08 Ω
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
VDS = 50 V, ID = 34 A 43 - - S
VDS = 500 V, VGS = 0 V - - 50
V
= 400 V, VGS = 0 V, TJ = 125 °C - - 500
DS
VGS = 20 V - - 200
= - 20 V - - - 200
GS
ID = 57 A
V
= 400 V
DS
= 10 V; see fig. 6 and 13
V
GS
VDD = 250 V
= 57 A
I
D
R
= 2.0 Ω (internal)
g
R
= 4.3 Ω, see fig. 10
D
(1)
(1)
- 225 338
-5177
- 98 147
-32-
- 152 -
- 108 -
- 118 -
Between lead, and center of die contact - 5.0 - nH
VGS = 0 V
V
= 25 V
DS
f = 1.0 MHz, see fig. 5
- 10 000 -
- 1500 -
-50-
μA
nA
nCGate to source charge Q
ns
pFOutput capacitance C
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current (body diode) I
Pulsed source current (body diode) I
Diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Forward turn-on time t
SM
SD
S
(1)
(2)
rr
rr
on
MOSFET symbol showing
the integral reverse p-n
junction diode.
G
TJ = 25 °C, IS = 57 A, VGS = 0 V - - 1.3 V
TJ = 25 °C, IF = 57 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
(2)
Pulse width ≤ 300 μs, duty cycle ≤ 2 %
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94548
2 [email protected]
, [email protected], [email protected] Revision: 12-May-10
D
--57
--228
S
- 901 1351 ns
(2)
-1523μC
A
Page 3
1000
FA57SA50LCP
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20μs PULSE WIDT H
°
T = 25 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig. 1 - Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
Power MOSFET, 57 A
3.0
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
Fig. 4 - Normalized On-Resistance vs. Temperature
15000
12000
9000
Vishay Semiconductors
57A
I =
D
V =
10V
GS
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
V
=
0V,
GS
C
iss gs gd , ds
C
rss gd
C
oss ds gd
f = 1MHz
=
C
+ C
=
C
=
C
+ C
C
iss
°
C SHORTED
10
D
I , Drain-to-Source Current (A)
20μs PULSE WIDT H
°
T = 150 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig. 2 - Typical Output Characteristics
°
T = 150 C
J
100
°
T = 25 C
J
10
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4 5 6 7 8 9 10
V , Gate-to-Source Voltage (V)
GS
20μs PULSE WIDTH
Fig. 3 - Typical Transfer Characteristics
6000
C, Capacitance (pF)
3000
0
1 10 100
-V , Drain-to-Source Voltage (V)
DS
C
oss
C
rss
Fig. 5 - Typical Capacitance vs. Drain to Source Voltage
20
I =
57 A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 60 120 180 240 300 360
V = 400V
DS
V = 250V
DS
V = 100V
DS
FOR TEST CIRCUIT
SEE FIGURE
Q , Total Gate Charge (nC)
G
13
Fig. 6 - Typical Gate Charge vs. Gate to Source Voltage
Document Number: 94548 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 12-May-10 [email protected]
Page 4
FA57SA50LCP
Vishay Semiconductors
1000
°
T = 150 C
J
100
°
T = 25 C
DS
SD
°
J
BY R
DS(on)
10us
100us
1ms
°
10ms
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source Drain Diode Forward Voltage
1000
100
D
I , Drain Current (A)I , Drain Current (A)
OPERATION IN T HIS AREA LIMIT ED
10
= 25 C
C
T T= 150 C
J
Single Pulse
1
1 10 100 1000 10000
V , Drain-to-Source Voltage ( V)
Fig. 8 - Maximum Safe Operating Area
Power MOSFET, 57 A
V = 0 V
GS
60.0
50.0
40.0
30.0
20.0
D
I , Drain Current (A)
10.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D.U.T.
D
+
V
DD
-
V
DS
V
GS
R
G
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90%
0%
GS
t
d(on)tr
t
d(off)tf
Fig. 10b - Switching Time Waveforms
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94548
4 [email protected]
, [email protected], [email protected] Revision: 12-May-10
Page 5
FA57SA50LCP
Power MOSFET, 57 A
1
thJC
D = 0.50
(Z )
0.1
0.20
0.10
0.05
0.01
0.02
0.01
Thermal Response
0.001
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (s ec)
1
Vishay Semiconductors
P
DM
t
1
t
2
1 2
J DM thJC C
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
15 V
t
p
V
(BR)DSS
Driver
+
V
DD
-
A
I
AS
R
20 V
V
DS
G
L
D.U.T
I
AS
0.01 Ω
t
p
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
1500
TOP
1200
900
600
300
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTT OM
°
I
D
25A
35A
57A
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Document Number: 94548 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 12-May-10 [email protected]
Page 6
FA57SA50LCP
Vishay Semiconductors
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
Power MOSFET, 57 A
D.U.T.
+
2
-
+
3
-
Same type as D.U.T.
12 V
V
GS
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
4
-
+
Current regulator
50 kΩ
0.2 µF
0.3 µF
3 mA
Current sampling resistors
+
V
D.U.T.
I
G
I
DS
-
D
Reverse
Recovery
Current
Re-Applied
Voltage
1
R
g
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
controlled by duty factor "D"
SD
• D.U.T. - Device Under Test
Fig. 13c - Peak Diode Recovery dV/dt Test Circuit
Driver Gate Drive
P.W.
D.U.T. I
D.U.T. V
Inductor Curent
Waveform
SD
Waveform
DS
Period
Body Diode Forward
Current
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
di/dt
D =
Period
P. W .
g
+
V
DD
-
=10V
V
V
I
*
GS
DD
SD
*
VGS = 5V for Logic Level Devices
Fig. 14 - For N-Channel Power MOSFETs
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94548
6 [email protected]
, [email protected], [email protected] Revision: 12-May-10
Page 7
FA57SA50LCP
ORDERING INFORMATION TABLE
Device code
F A 57 S A 50 LC P
1 - Power MOSFET
2 - Generation 3, MOSFET silicon, DBC construction
3 - Current rating (57 = 57 A)
4 - Single switch (see Circuit Configuration table)
5 - SOT-227
6 - Voltage rating (50 = 500 V)
7 - Low charge
- P = Lead (Pb)-free
8
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
Power MOSFET, 57 A
CIRCUIT
Vishay Semiconductors
51324678
CIRCUIT DRAWING
D (3)
Single switch no diode S
G (2)
S (1-4)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037
Lead assignment
4
1
S
D
3
2
G
S
Document Number: 94548 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 12-May-10 [email protected]
Page 8
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
-A-
4
12
3
12.50 (0.492)
7.50 (0.295)
Ø 4.40 (0.173)
Ø 4.20 (0.165)
30.20 (1.189)
29.80 (1.173)
15.00 (0.590)
6.25 (0.246)
25.70 (1.012)
25.20 (0.992)
-B-
R full
Chamfer
2.00 (0.079) x 45°
2.10 (0.082)
1.90 (0.075)
8.10 (0.319)
7.70 (0.303)
4 x
2.10 (0.082)
1.90 (0.075)
-C-
0.12 (0.005)
12.30 (0.484)
11.80 (0.464)
MMM
0.25 (0.010)
CA B
4 x M4 nuts
Outline Dimensions
Vishay Semiconductors
SOT-227
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
www.vishay.com
Page 9
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
Loading...