
52098HA (KT)/71095MO(KOTO) TA-0112 No.4889-1/4
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN4889
FX606
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egatloVecruoS-ot-niarDV
SSD
06V
egatloVecruoS-ot-etaGV
SSG
51±V
)CD(tnerruCniarDI
D
2A
)esluP(tnerruCniarDI
PD
WP ≤ elcycytud,sµ01 ≤ %18A
noitapissiDrewoPelbawollA
P
D
6W
P
D
5.1W
noitapissiDlatoTP
T
2W
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Package Dimensions
unit:mm
2120
[FX606]
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
SANYO:XP6
(Bottom view)
Features
· Composite type composed of two low ON-resistance
N-channel MOSFET chips for ultrahigh-speed
switching and low-voltage drive.
· Facilitates high-density mounting.
· The FX606 is formed with two chips, each being
equivalent to the 2SK1470, placed in one package.
· Matched pair characteristics.
· Marking:606
Continued on next page.
Switching Time T est Circuit
Specifications
Absolute Maximum Ratings at Ta = 25˚C
˚C
˚C
Mounted on ceramic board (750mm2×0.8mm) 1 unit
Mounted on ceramic board (750mm
2
×0.8mm)
Tc=25˚C, 1 unit
Electrical Connection
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
(Top view)

FX606
No.4889-2/4
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
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sgnitaR
tinU
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SSD)RB(
I
D
V,Am1=
SG
0=06V
tnerruCniarDegatloVetaG-oreZI
SSD
V
SD
V,V06=
SG
0=001Aµ
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SSG
V
SG
V,21±=
SD
0=01±Aµ
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)ffo(SG
V
SD
Am1=DI,V01=0.10.2V
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01=
D
A1=2.10.2S
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
)no(SD
I
D
V,A1=
SG
V01=53.054.0
Ω
R
)no(SD
I
D
V,A1=
SG
V4=54.06.0
Ω
ecnaticapaCtupnI
ssiCV
SD
zHM1=f,V02=051Fp
ecnaticapaCtuptuO
ssoCV
SD
zHM1=f,V02=06Fp
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ssrCV
SD
zHM1=f,V02=21Fp
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t
)no(d
tiucriCtseTdeificepseeS6sn
emiTesiR
t
r
tiucriCtseTdeificepseeS01sn
emiTyaleDFFO-nruT
t
)ffo(d
tiucriCtseTdeificepseeS06sn
emiTllaF
t
f
tiucriCtseTdeificepseeS02sn
egatloVdrawroFedoiD
V
DS
I
S
V,A2.1=
SG
0=0.1V

FX606
PS No.4889-4/4
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.