Page 1
150
General Description
η
50.0
V, Vgs = 0V,
V, Vgs = 0V,
V, Vgs = 0V,
F1415
polyfet rf devices
8/1/97
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOSTRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
150Watts Single Ended
Laser Driver and others.
"Polyfet" process features
TM
Package Style AM
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
t
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
performance
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation Resistance Temperature Voltage Voltage Voltage
250Watts 0.8
Junction to
Case Thermal
o
C/W
Maximum
Junction
o
C
200 -65 to 150
Storage
Temperature
o
C
DC Drain
Current
o
C
10 A
o
Drain to
Gate
Drain to
Source
VV150 150
Gate to
Source
RF CHARACTERISTICS ( WATTS OUTPUT )
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Gps
Common Source Power Gai
13
dB
Idq =
0.6
A,
50.0Vds = V,
F = 150MHz
30V
VSWR
Drain Efficiency
Load Mismatch Toleranc
65
20:1
%
Relative
Idq =
Idq =
0.6
0.6
A,
A,
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
125
12
1
71
4.8
0.25
28.8
270
13.2
120
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
POLYFET RF DEVICES
0.1Ids = A,
Vds = V, Vgs = 0V
Vds = 0 V, Vgs = 30V
Ids = A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids =10
Vgs = 20V, Vds = 10V
50.0Vds =
50.0Vds =
50.0Vds =
REVISION
50.0Vds = V,
50.0Vds = V,
Vgs = 0V
A
F = 150MHz
F = 150MHz
F = 1 MHz
F = 1 MHz
F = 1 MHz
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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F1415
ID IN AMPS
Id in amps; Gm in mhos
8/1/97
POUT VS PIN GRAPH
F1415 POUT VS PIN F=150 MHZ; IDQ=0.5A; VDS=50V
220
180
140
100
Efficiency = 60%
60
20
0 2 4 6 8 10 12 14 16 18 20
PIN IN WATTS
IV CURVE ID AND GM VS VGS
F1E 6 DICE IV
30
25
20
15
10
POUT GAIN
16.00
15.00
14.00
13.00
12.00
11.00
10.00
9.00
CAPACITANCE VS VOLTAGE
F1E 6 DICE CAPACITANCE
1000
Ciss
100
Crss
10
0 5 10 15 20 25 30 35 40 45 50
F1E 6 DICE ID & GM Vs VG
100.00
10.00
1.00
Coss
VDS IN VOLTS
Id
gM
5
0
0 2 4 6 8 10 12 14 16 18 20
vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v
VDS IN VOLTS
0.10
0 2 4 6 8 10 12 14 16 18 20
Vgs in Volts
S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
POLYFET RF DEVICES
REVISION
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