Datasheet F1251T, F1250T, F0500T, B6002AD, B3204UC Datasheet (TECOR)

Data Book

and Design Guide

TECCOR ELECTRONICS

1800 Hurd Drive

Irving, Texas 75038

United States of America

Phone: +1 972-580-7777

Fax: +1 972-550-1309

Web site: http://www.teccor.com

E-mail: sidactor.techsales@teccor.com

An Invensys company

Teccor Electronics is the proprietor of the SIDACtor®, Battrax®, and Tel eL in k

®

trademarks. All other brand names may be trademarks of their respective companies. Teccor Electronics SIDACtor products are covered by these and other U.S. Patents:

4,685,120 4,827,497 4,905,119 5,479,031 5,516,705

All SIDACtor products are recognized and listed under UL file E133083 as a UL 497B compliant device. All TeleLink fuses are recognized under UL file E191008 and are also listed for CSA marking by certificate LR 702828.

Teccor Electronics reserves the right to make changes at any time in order to improve designs and to supply the best products possible. The information in this catalog has been carefully checked and is believed to be accurate and reliable; however, no liability of any type shall be incurred by Teccor for the use of the circuits or devices described in this publication. Furthermore, no license of any patent rights is implied or given to any purchaser.

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NOTES

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Data Book and Design Guide +1 972-580-7777

Product Selection

Guide

1 Product Selection

Guide

Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-2

Product Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-4

Part Number Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-6

Description of Part Number . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-8

Electrical Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-10

Quality and Reliability. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1-11

Standard Terms and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-12

Product Description

®

Data Book and Design Guide

Product Description

SIDACtor components are solid state crowbar devices designed to protect telecom equipment during hazardous transient conditions. Capitalizing on the latest in thyristor advancements, Teccor makes SIDACtor devices with a patented ion implant technology. This technology ensures effective protection within nanoseconds, up to 5000 A surge current ratings, and simple solutions for regulatory requirements such as GR 1089, TIA-968 (formerly known as FCC Part 68), ITU-T K.20, ITU-T K.21, and UL 60950.

Operation

In the standby mode, SIDACtor devices exhibit a high off-state impedance, eliminating excessive leakage currents and appearing transparent to the circuits they protect. Upon application of a voltage exceeding the switching voltage (VS), SIDACtor devices crowbar and simulate a short circuit condition until the current flowing through the device is either interrupted or drops below the SIDACtor device’s holding current (I

H

). Once this occurs,

SIDACtor devices reset and return to their high off-state impedance.

V-I Characteristics

Advantages

Compared to surge suppression using other technologies, SIDACtor devices offer absolute surge protection regardless of the surge current available and the rate of applied voltage (dv/dt). SIDACtor devices:

• Cannot be damaged by voltage

• Eliminate hysteresis and heat dissipation typically found with clamping devices

• Eliminate voltage overshoot caused by fast-rising transients

• Are non-degenerative

• Will not fatigue

• Have low capacitance, making them ideal for high-speed transmission equipment

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Product Description

Product Selection

Guide

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Data Book and Design Guide +1 972-580-7777

Applications

When protecting telecommunication circuits, SIDACtor devices are connected across Tip and Ring for metallic protection and across Tip and Ground and Ring and Ground for longitudinal protection. They typically are placed behind some type of current-limiting device, such as Teccor’s F1250T Telelink slow blow fuse. Common applications include:

• Central office line cards (SLICs)

• T-1/E-1, ISDN, and xDSL transmission equipment

• Customer Premises Equipment (CPE) such as phones, modems, and caller ID adjunct boxes

• PBXs, KSUs, and other switches

• Primary protection including main distribution frames, five-pin modules, building entrance equipment, and station protection modules

• Data lines and security systems

• CATV line amplifiers and power inserters

• Sprinkler systems

For more information regarding specific applications, design requirements, or surge suppression, please contact Teccor Electronics directly at +1 972-580-7777 or through our local area representative. Access Teccor’s web site at http://www.teccor.com or e-mail us at sidactor.techsales@teccor.com.

Product Packages

®

Data Book and Design Guide

Product Packages

Surface Mount Packages

DO-214AA

Modified

DO-214AA

Modified

MS-013 Six-pin

Surface Mount

(Fuse)

Balanced SIDACtor Device

✓

Battrax Dual Negative SLIC Protector ✓

Battrax Dual Positive/Negative SLIC

Protector

✓

Battrax Quad Negative SLIC Protector ✓

Battrax SLIC Protector ✓✓

CATV/HFC SIDACtor Device

CATV Line Amplifiers/Power Inserters SIDACtor Device

Fixed Voltage SLIC Protector

✓✓

Four-port Metallic Line Protector

High Surge (D-rated) SIDACtor Device ✓

LCAS Asymmetrical Device ✓✓

Longitudinal Protector ✓✓

MC Balanced SIDACtor Device ✓

MC SIDACtor Device ✓✓

Multiport Balanced SIDACtor Device ✓

Multiport Quad SLIC Protector ✓

Multiport SIDACtor Device ✓

SIDACtor Device ✓✓✓

TeleLink Fuse ✓

Twin SLIC Protector ✓

Product Packages

Product Selection

Guide

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Data Book and Design Guide +1 972-580-7777

Through-hole Packages

TO-92

Modified

TO-220 TO-218 Hybrid SIP

✓✓Balanced SIDACtor Device

Battrax Dual Negative SLIC Protector

Battrax Dual Positive/Negative SLIC

Protector

Battrax Quad Negative SLIC Protector

Battrax SLIC Protector

✓✓ CATV/HFC SIDACtor Device

✓✓ CATV Line Amplifiers/Power Inserters

SIDACtor Device

✓ Fixed Voltage SLIC Protector

✓ Four-port Metallic Line Protector

✓ High Surge (D-rated) SIDACtor Device

LCAS Asymmetrical Device

✓✓Longitudinal Protector

✓✓MC Balanced SIDACtor Device

✓✓✓ ✓MC SIDACtor Device

✓ Multiport Balanced SIDACtor Device

Multiport Quad SLIC Protector

✓ Multiport SIDACtor Device

✓✓✓ ✓SIDACtor Device

✓ TeleLink Fuse

Twin SLIC Protector

Part Number Index

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Data Book and Design Guide

Part Number Index

Note: For explanation of part numbers, see "Description of Part Number" on page 1-8.

Part Number Page

A1220U_4 2-36

A1225U_4 2-36

A2106A_ 2-32

A2106U_ 2-20

A2106U_6 2-24

A2106Z_ 2-40

A5030A_ 2-32

A5030U_ 2-20

A5030U_6 2-24

A5030Z_ 2-40

B1100C_ 2-52

B1101U_ 2-54

B1101U_4 2-58

B1160C_ 2-52

B1161U_ 2-54

B1161U_4 2-58

B1200C_ 2-52

B1201U_ 2-54

B1201U_4 2-58

B2050C_ 2-52

B3104U_ 2-56

B3164U_ 2-56

B3204U_ 2-56

F0500T 2-66

F1250T 2-66

F1251T 2-66

P0080E_ 2-16

P0080S_ 2-4

P0080SA MC 2-8

P0080SC MC 2-6

P0080SD 2-10

P0080Z_ 2-44

P0084U_ 2-22

P0300E_ 2-16

P0300S_ 2-4

P0300SA MC 2-8

P0300SC MC 2-6

P0300SD 2-10

P0300Z_ 2-44

P0304U_ 2-22

P0602A_ 2-28

P0602AC MC 2-30

P0602Z_ 2-42

P0640E_ 2-16

P0640EC MC 2-18

P0640S_ 2-4

P0640SC MC 2-6

P0640SD 2-10

P0640Z_ 2-44

P0641CA2 2-48

P0641S_ 2-46

P0641U_ 2-50

P0642S_ 2-14

P0644U_ 2-22

P0720E_ 2-16

P0720S_ 2-4

P0720SC MC 2-6

P0720SD 2-10

P0720Z_ 2-44

P0721CA2 2-48

P0721S_ 2-46

P0721U_ 2-50

P0722S_ 2-14

P0724U_ 2-22

P0900E_ 2-16

P0900S_ 2-4

P0900SC MC 2-6

P0900SD 2-10

P0900Z_ 2-44

P0901CA2 2-48

P0901S_ 2-46

P0901U_ 2-50

P0902S_ 2-14

P0904U_ 2-22

P1100E_ 2-16

P1100S_ 2-4

P1100SC MC 2-6

P1100SD 2-10

P1100Z_ 2-44

P1101CA2 2-48

Part Number Page

P1101S_ 2-46

P1101U_ 2-50

P1102S_ 2-14

P1104U_ 2-22

P1200S_ 2-38

P1300E_ 2-16

P1300S_ 2-4

P1300SC MC 2-6

P1300SD 2-10

P1300Z_ 2-44

P1304U_ 2-22

P1400AD 2-60

P1402A_ 2-28

P1402AC MC 2-30

P1402Z_ 2-42

P1500E_ 2-16

P1500EC MC 2-18

P1500S_ 2-4

P1500SC MC 2-6

P1500SD 2-10

P1500Z_ 2-44

P1504U_ 2-22

P1553A_ 2-32

P1553AC MC 2-34

P1553U_ 2-20

P1553Z_ 2-40

P1556U_ 2-24

P1602A_ 2-28

P1602AC MC 2-30

P1602Z_ 2-42

P1800AD 2-60

P1800E_ 2-16

P1800S_ 2-4

P1800SC MC 2-6

P1800SD 2-10

P1800Z_ 2-44

P1803A_ 2-32

P1803AC MC 2-34

P1803U_ 2-20

P1803Z_ 2-40

Part Number Page

Part Number Index

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Data Book and Design Guide +1 972-580-7777

Product Selection

Guide

P1804U_ 2-22

P1806U_ 2-24

P1900ME 2-64

P2000AA61 2-26

P2000S_ 2-38

P2103A_ 2-32

P2103AC MC 2-34

P2103U_ 2-20

P2103Z_ 2-40

P2106U_ 2-24

P2200AA61 2-26

P2202A_ 2-28

P2202AC MC 2-30

P2202Z_ 2-42

P2300E_ 2-16

P2300ME 2-64

P2300S_ 2-4

P2300SC MC 2-6

P2300SD 2-10

P2300Z_ 2-44

P2304U_ 2-22

P2353A_ 2-32

P2353AC MC 2-34

P2353U_ 2-20

P2353Z_ 2-40

P2356U_ 2-24

P2400AA61 2-26

P2500AA61 2-26

P2500S_ 2-38

P2600E_ 2-16

P2600EC MC 2-18

P2600S_ 2-4

P2600SC MC 2-6

P2600SD 2-10

P2600Z_ 2-44

P2604U_ 2-22

P2702A_ 2-28

P2702AC MC 2-30

P2702Z_ 2-42

P2703A_ 2-32

Part Number Page

P2703AC MC 2-34

P2703U_ 2-20

P2703Z_ 2-40

P2706U_ 2-24

P3000AA61 2-26

P3002A_ 2-28

P3002AC MC 2-30

P3002CA 2-12

P3002S_ 2-14

P3002Z_ 2-42

P3100AD 2-62

P3100E_ 2-16

P3100EC MC 2-18

P3100S_ 2-4

P3100SC MC 2-6

P3100SD 2-10

P3104U_ 2-22

P3100Z_ 2-44

P3203A_ 2-32

P3203AC MC 2-34

P3203U_ 2-20

P3203Z_ 2-40

P3206U_ 2-24

P3300AA61 2-26

P3403A_ 2-32

P3403AC MC 2-34

P3403U_ 2-20

P3403Z_ 2-40

P3406U_ 2-24

P3500E_ 2-16

P3500S_ 2-4

P3500SC MC 2-6

P3500SD 2-10

P3500Z_ 2-44

P3504U_ 2-22

P3602A_ 2-28

P3602AC MC 2-30

P3602Z_ 2-42

P4202A_ 2-28

P4202AC MC 2-30

Part Number Page

P4202Z_ 2-42

P4802A_ 2-28

P4802AC MC 2-30

P4802Z_ 2-42

P5103A_ 2-32

P5103AC MC 2-34

P5103U_ 2-20

P5106U_ 2-24

P6002A_ 2-28

P6002AC MC 2-30

P6002AD 2-62

P6002CA 2-12

P6002Z_ 2-42

Part Number Page

Description of Part Number

®

Data Book and Design Guide

Description of Part Number

The following illustration shows a description of a sample SIDACtor device part number.

P 210 2 A A

DEVICE TYPE P = SIDACtor

PACKAGE TYPE

A = TO–220

C = Three-leaded DO-214

E = TO–92

M = TO-218

S = DO–214

U = Six-pin SOIC

Z = SIP

LEAD FORM OPTIONS

TO-220 modified type 60, 61, or 62

For U type:

3 = 3 chips 4 = 4 chips 6 = 6 chips

61

CONSTRUCTION VARIABLE 0 = One chip 1 = Unidirectional part 2 = Two chips 3 = Three chips

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PP

RATING

A = 50 A (10x560 µs)

B = 100 A (10x560 µs)

C = 500 A (2x10 µs) D = 1000 A (8x20 µs) E = 3000 A (8x20 µs)

RP

PACKING OPTIONS

RP1 = TO-92 reel pack (0.100" lead spacing) RP2 = TO-92 reel pack (0.200" lead spacing)

AP = Ammo pack

RP = Reel pack

TP = Tube pack

MEDIAN VOLTAGE RATING 210 = 210 V

0 = One SIDACtor Chip

2 = Two Matched SIDACtor Chips

3 = Three Matched SIDACtor Chips

Patented

1

3

2

1

3

2

Description of Part Number

Product Selection

Guide

®

Data Book and Design Guide +1 972-580-7777

The following illustration shows a description of a sample Battrax device part number.

The following illustration shows a description of a sample asymmetrical SIDACtor device part number.

B1 1 U A

DEVICE TYPE B = Battrax

PACKAGE TYPE

C = Three-leaded DO-214

U = Six-pin SOIC

CONSTRUCTION VARIABLE

0 = No diode

1 = Diode

4 = Four Battrax Devives

IPP RATING

A = 50 A (10x560 µs)

B = 100 A (10x560 µs)

C = 500 A (2x10 µs)

HOLDING CURRENT 05 = 50 mA 10 = 100 mA 16 = 160 mA 20 = 200 mA

10

Battrax TYPE 1 = Negative 2 = Positive 3 = Dual

A1806 U C

DEVICE TYPE A = Asymmetrical SIDACtor

PACKAGE TYPE

A = TO-220

M = TO-218

U = Six-pin SOIC

LEAD FORM OPTIONS

TO-220 modified type 60, 61, or 62

For U type: 3 = 3 chips 4 = 4 chips 6 = 6 chips

4

IPP RATING

A = 50 A (10x560 µs)

B = 100 A (10x560 µs)

C = 500 A (2x10 µs) D = 1000 A (8x20 µs) E = 3000 A (8x20 µs)

PACKING OPTIONS

AP = Ammo pack

RP = Reel pack

TP = Tube pack

MEDIAN VOLTAGE RATING 1806 = 180 V and 60 V

TP

3 = Three Matched SIDACtor chips

Patented

1

3

2

Electrical Parameters

®

Data Book and Design Guide

Electrical Parameters

Electrical parameters are based on the following definition of conditions:

• On state (also referred to as the crowbar condition) is the low impedance condition reached during full conduction and simulates a short circuit.

• Off state (also referred to as the blocking condition) is the high impedance condition prior to beginning conduction and simulates an open circuit.

C

O

Off-state Capacitance — typical capacitance measured in off state

di/dt Rate of Rise of Current — maximum rated value of the acceptable rate of

rise in current over time

dv/dt Rate of Rise of Voltage — rate of applied voltage over time

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Switching Current — maximum current required to switch to on state

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Leakage Current — maximum peak off-state current measured at V

DRM

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Holding Current — minimum current required to maintain on state

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Peak Pulse Current — maximum rated peak impulse current

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On-state Current — maximum rated continuous on-state current

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Peak One-cycle Surge Current — maximum rated one-cycle AC current

V

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Switching Voltage — maximum voltage prior to switching to on state

V

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Peak Off-state Voltage — maximum voltage that can be applied while maintaining off state

V

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On-state Forward Voltage — maximum forward voltage measured at rated on-state current

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On-state Voltage — maximum voltage measured at rated on-state current

Quality and Reliability

Product Selection

Guide

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Data Book and Design Guide +1 972-580-7777

Quality and Reliability

It is Teccor’s policy to ship quality products on time. We accomplish this through Total Quality Management based on the fundamentals of customer focus, continuous improvement, and people involvement.

In support of this commitment, Teccor applies the following principles:

• Employees shall be respected, involved, informed, and qualified for their job with appropriate education, training, and experience.

• Customer expectations shall be met or exceeded by consistently shipping products that meet the agreed specifications, quality levels, quantities, schedules, and test and reliability parameters.

• Suppliers shall be selected by considering quality, service, delivery, and cost of ownership.

• Design of products and processes will be driven by customer needs, reliability, and manufacturability.

It is the responsibility of management to incorporate these principles into policies and systems.

It is the responsibility of those in leadership roles to coach their staff and to reinforce these principles.

It is the responsibility of each individual employee to follow the spirit of this statement to ensure that we meet the primary policy — to ship quality products on time.

Standard Terms and Conditions

®

Data Book and Design Guide +1 972-580-7777

Standard Terms and Conditions

Supplier shall not be bound by any term proposed by Buyer in the absence of written agreement to such term signed by an authorized officer of Supplier.

(1) PRICE:

(A) Supplier reserves the right to change product prices at any time but, whenever practicable, Supplier will give Buyer at

least thirty (30) days written notice before the effective date of any price change. Unless Supplier has specifically agreed in writing, signed by an authorized officer of Supplier, that a quoted price shall not be subject to change for a certain time, all products shipped on or after the effective date of a price change may be billed at the new price level.

(B) Whenever Supplier agrees to a modification of Buyer's order (which modification must be in writing and signed by an

authorized officer of Supplier), Supplier reserves the right to alter its price, whether or not such price was quoted as “firm”.

(C) Prices do not include federal, state or local taxes, now or hereafter enacted, applicable to the goods sold. Taxes will

be added by Supplier to the sales prices whenever Supplier has legal obligation to collect them and will be paid by Buyer as invoiced unless Buyer provides Supplier with a proper tax exemption certificate.

(2) PRODUCTION: Supplier may, at its sole discretion and at any time, withdraw any catalog item from further production without

notice or liability to Buyer.

(3) INTEREST:

(A) All late payments shall bear interest thirty (30) days after the due date stated on the invoice until paid at the lower of one

and one-half percent per month or the maximum rate permitted by law. All interest becoming due shall, if not paid when due, be added to principal and bear interest from the due date. At Supplier's option, any payment shall be applied first to interest and then to principal.

(B) It is the intention of the parties to comply with the laws of the jurisdiction governing any agreement between the

parties relating to interest. If any construction of the agreement between the parties indicates a different right given to Supplier to demand or receive any sum greater than that permissible by law as interest, such as a mistake in calculation or wording, this paragraph shall override. In any contingency which will cause the interest paid or agreed to be paid to exceed the maximum rate permitted by law, such excess will be applied to the reduction of any principal amount due, or if there is no principal amount due, shall be refunded.

(4) TITLE AND DELIVERY: Title to goods ordered by Buyer and risk of loss or damage in transit or thereafter shall pass to Buyer

upon Supplier's delivery of the goods at Supplier's plant or to a common carrier for shipment to Buyer.

(5) CONTINGENCIES: Supplier shall not be responsible for any failure to perform due to causes reasonably beyond its control.

These causes shall include, but not be restricted to, fire, storm, flood, earthquake, explosion, accident, acts of public enemy, war rebellion, insurrection, sabotage, epidemic, quarantine restrictions, labor disputes, labor shortages, labor slow downs and sit downs, transportation embargoes, failure or delays in transportation, inability to secure raw materials or machinery for the manufacture of its devices, acts of God, acts of the Federal Government or any agency thereof, acts of any state or local government or agency thereof, and judicial action. Similar causes shall excuse Buyer for failure to take goods ordered by Buyer, from the time Supplier receives written notice from Buyer and for as long as the disabling cause continues, other than for goods already in transit or specially fabricated and not readily saleable to other buyers.

Supplier assumes no responsibility for any tools, dies, and other equipment furnished Supplier by Buyer.

(6) LIMITED WARRANTY AND EXCLUSIVE REMEDY: Supplier warrants all catalog products to be free from defects in materials

and workmanship under normal and proper use and application for a period of twelve (12) months from the date code on the product in question (or if none, from the date of delivery to Buyer.) With respect to products assembled, prepared, or manufactured to Buyer's specifications, Supplier warrants only that such products will meet Buyer's specifications upon delivery. As the party responsible for the specifications, Buyer shall be responsible for testing and inspecting the products for adherence to specifications, and Supplier shall have no liability in the absence of such testing and inspection or if the product passes such testing or inspection. THE ABOVE WARRANTY IS THE ONLY WARRANTY EXTENDED BY SUPPLIER, AND IS IN LIEU OF AND EXCLUDES ALL OTHER WARRANTIES AND CONDITIONS, EXPRESSED OR IMPLIED (EXCEPT AS PROVIDED HEREIN AS TO TITLE), ON ANY GOODS OR SERVICES SOLD OR RENDERED BY SUPPLIER, INCLUDING ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. THIS WARRANTY WILL NOT CREATE WARRANTY COVERAGE FOR ANY ITEM INTO WHICH ANY PRODUCT SOLD BY SUPPLIER MAY HAVE BEEN INCORPORATED OR ADDED.

SUPPLIER'S ENTIRE LIABILITY AND BUYER'S EXCLUSIVE REMEDY UNDER THIS WARRANTY SHALL BE, AT SUPPLIER'S OPTION, EITHER THE REPLACEMENT OF, REPAIR OF, OR ISSUANCE OF CREDIT TO BUYER'S ACCOUNT WITH SUPPLIER FOR ANY PRODUCTS WHICH ARE PROPERLY RETURNED BY BUYER DURING THE WARRANTY PERIOD. All returns must comply with the following conditions:

Standard Terms and Conditions

Product Selection

Guide

®

Data Book and Design Guide +1 972-580-7777

(A) Supplier is to be promptly notified in writing upon discovery of defects by Buyer. (B) Buyer must obtain a Return Material Authorization (RMA) number from the Supplier prior to returning product. (C) The defective product is returned to Supplier, transportation charges prepaid by Buyer. (D) Supplier's examination of such product discloses, to its satisfaction, that such defects have not been caused by

misuse, neglect, improper installation, repair, alteration, or accident.

(E) The product is returned in the form it was delivered with any necessary disassembly carried out by Buyer at Buyer's

expense.

IN NO EVENT SHALL SUPPLIER, OR ANYONE ELSE ASSOCIATED IN THE CREATION OF ANY OF SUPPLIER'S PRODUCTS OR SERVICES, BE LIABLE TO BUYER FOR INCIDENTAL OR CONSEQUENTIAL DAMAGES OF ANY NATURE INCLUDING LOSS OF PROFITS, LOSS OF USE, BUSINESS INTERUPTION, AND THE LIKE. BUYER ACKNOWLEDGES THAT THE ABOVE WARRANTIES AND LIMITATIONS THEREON ARE APPROPRIATE AND REASONABLE IN EFFECTUATING SUPPLIER'S AND BUYER'S MUTUAL INTENTION TO CONDUCT AN EFFICIENT TRANSACTION AT PRICES MORE ADVANTAGEOUS TO BUYER THAN WOULD BE AVAILABLE IN THE PRESENCE OF OTHER WARRANTIES AND ASSURANCES.

(7) PATENTS: Buyer shall notify Supplier in writing of any claim that any product or any part of use thereof furnished under this

agreement constitutes an infringement of any U.S. patent, copyright, trade secret, or other proprietary rights of a third party. Notice shall be given within a reasonable period of time which should in most cases be within ten (10) days of receipt by Buyer of any letter, summons, or complaint pertaining to such a claim. At its option, Supplier may defend at its expense any action brought against Buyer to the extent that it is based on such a claim. Should Supplier choose to defend any such claim, Supplier may fully participate in the defense, settlement, or appeal of any action based on such claim.

Should any product become, or in Supplier's opinion be likely to become, the subject of an action based on any such claim, Supplier may, at its option, as the Buyer's exclusive remedy, either procure for the Buyer the right to continue using the product, replace the product or modify the product to make it noninfringing. IN NO EVENT SHALL SUPPLIER BE LIABLE FOR ANY INCIDENTAL OR CONSEQUENTIAL DAMAGES BASED ON ANY CLAIM OF INFRINGEMENT.

Supplier shall have no liability for any claim based on modifications of a product made by any person or entity other than Supplier, or based on use of a product in conjunction with any other item, unless expressly approved by Supplier. Supplier does not warrant goods against claims of infringement which are assembled, prepared, or manufactured to Buyer's specifications.

(8) NON-WAIVER OF DEFAULT: Each shipment made under any order shall be treated as a separate transaction, but in the

event of any default by Buyer, Supplier may decline to make further shipments without in any way affecting its rights under such order. If, despite any default by Buyer, Supplier elects to continue to make shipments, its action shall not constitute a waiver of that or any default by Buyer or in any way affect Supplier's legal remedies for any such default. At any time, Supplier's failure to exercise any right to remedy available to it shall not constitute a waiver of that right or remedy.

(9) TERMINATION: If the products to be furnished under this order are to be used in the performance of a Government contract

or subcontract, and the Government terminates such contract in whole or part, this order may be canceled to the extent it was to be used in the canceled portion of said Government contract and the liability of Buyer for termination allowances shall be determined by the then applicable regulations of the Government regarding termination of contracts. Supplier may cancel any unfilled orders unless Buyer shall, upon written notice, immediately pay for all goods delivered or shall pay in advance for all goods ordered but not delivered, or both, at Supplier's option.

(10) LAW: The validity, performance and construction of these terms and conditions and any sale made hereunder shall be gov-

erned by the laws of the state of Texas.

(11) ASSIGNS: This agreement shall not be assignable by either Supplier or Buyer. However, should either Supplier or Buyer be

sold or transferred in its entirety and as an ongoing business, or should Supplier or Buyer sell or transfer in its entirety and as an ongoing concern, any division, department, or subsidiary responsible in whole or in part for the performance of this Agreement, this Agreement shall be binding upon and inure to the benefit of those successors and assigns of Supplier, Buyer, or such division, department, or subsidiary.

(12) MODIFICATION OF STANDARD TERMS AND CONDITIONS: No attempted or suggested modification of or addition to any

of the provisions upon the face or reverse of this form, whether contained or arising in correspondence and/or documents passing between Supplier and Buyer, in any course of dealing between Supplier or Buyer, or in any customary usage prevalent among businesses comparable to those of Supplier and/or Buyer, shall be binding upon Supplier unless made and agreed to in writing and signed by an officer of Supplier.

(13) QUANTITIES: Any variation in quantities of electronic components, or other goods shipped over or under the quantities

ordered (not to exceed 5%) shall constitute compliance with Buyer's order and the unit price will continue to apply.

NOTES

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

2 Data Sheets

This section presents complete electrical specifications for Teccor’s SIDACtor solid state overvoltage protection devices.

DO-214AA Package Symbolization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3

DO-214AA

SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4

MicroCapacitance (MC) SC SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-6

MicroCapacitance (MC) SA SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-8

High Surge Current (D-rated) SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10

Compak Two-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-12

Ethernet/10BaseT/100BaseT Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-14

TO-92

SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-16

MicroCapacitance (MC) SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-18

Modified MS-013 (Six-pin Surface Mount)

Balanced Three-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-20

Multiport SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-22

Multiport Balanced SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-24

Modified TO-220

SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-26

Two-chip SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-28

Two-chip MicroCapacitance (MC) SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-30

Balanced Three-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-32

Balanced Three-chip MicroCapacitance (MC) SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . 2-34

LCAS

LCAS Asymmetrical Multiport Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-36

LCAS Asymmetrical Discrete Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-38

SIP Hybrid Overvoltage and Overcurrent Protector

Four-Port Balanced Three-chip Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-40

Four-Port Longitudinal Two-chip Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-42

Four-Port Metallic Line Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-44

SLICs

Fixed Voltage SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-46

Twin SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-48

Multiport SLIC Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-50

Battrax

Battrax SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-52

Battrax Dual Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-54

Battrax Dual Positive/Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-56

Battrax Quad Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-58

CATVs

CATV and HFC SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-60

High Surge Current SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-62

CATV Line Amplifiers/Power Inserters SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-64

TeleLink Fuse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-66

Acronyms: CATV Community Antenna TV

HFC Hybrid Fiber Coax LCAS Line Circuit Access Switch SIP Single In-line Package SLIC Subscriber Line Interface Circuit

DO-214AA Package Symbolization

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

DO-214AA Package Symbolization

Note: Date code is located below the symbolized part number.

Part Number Part Number Part Number

Catalog Symbolized Catalog Symbolized Catalog Symbolized

P0080SA P-8A P0901SC P91C P2300SB P23B

P0080SA MC P-8AM P1100SA P11A P2300SC P23C

P0080SB P-8B P1100SB P11B P2300SD P23D

P0080SC P-8C P1100SC P11C P2300SC MC P23CM

P0080SD P-8D P1100SD P11D P2500SA P25A

P0080SC MC P-8CM P1100SC MC P11CM P2500SB P25B

P0300SA P03A P1101CA2 P02A P2500SC P25C

P0300SA MC P03AM P1101SA P01A P2500SD P25D

P0300SB P03B P1101SC P01C P2500SC MC P25CM

P0300SC P03C P1200SA P12A P2600SA P26A

P0300SD P03D P1200SB P12B P2600SB P26B

P0300SC MC P03CM P1200SC P12C P2600SC P26C

P0640SA P06A P1200SD P12D P2600SD P26D

P0640SB P06B P1200SC MC P12CM P2600SC MC P26CM

P0640SC P06C P1300SA P13A P3002CB P30B

P0640SD P06D P1300SB P13B P3002SB P30B

P0640SC MC P06CM P1300SC P13C P3100SA P31A

P0641CA2 P62A P1300SD P13D P3100SB P31B

P0641SA P61A P1300SC MC P13CM P3100SC P31C

P0641SC P61C P1500SA P15A P3100SD P31D

P0720SA P07A P1500SB P15B P3100SC MC P31CM

P0720SB P07B P1500SC P15C P3500SA P35A

P0720SC P07C P1500SD P15D P3500SB P35B

P0720SD P07D P1500SC MC P15CM P3500SC P35C

P0720SC MC P07CM P1800SA P18A P3500SD P35D

P0721CA2 P72A P1800SB P18B P3500SC MC P35CM

P0721SA P71A P1800SC P18C P6002CB P60B

P0721SC P71C P1800SD P18D B1100CA B10A

P0900SA P09A P1800SC MC P18CM B1100CC B10C

P0900SB P09B P2000SA P20A B1160CA B16A

P0900SC P09C P2000SB P20B B1160CC B16C

P0900SD P09D P2000SC P20C B1200CA B12A

P0900SC MC P09CM P2000SD P20D B1200CC B12C

P0901CA2 P92A P2000SC MC P20CM B2050CA B25A

P0901SA P91A P2300SA P23A B2050CC B25C

SIDACtor Device

®

Data Book and Design Guide

SIDACtor Device

DO-214AA SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, fax machines, and other CPE.

SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

* For individual “SA”, “SB”, and “SC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB” product. “SC” capacitance is approximately 2x the listed value. The off-state capacitance of the P0080SB is equal to the “SC” device.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Vol ts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

P0080S_ 6 25 4 5 800 2.2 50 100

P0300S_ 25 40 4 5 800 2.2 50 110

P0640S_ 58 77 4 5 800 2.2 150 50

P0720S_ 65 88 4 5 800 2.2 150 50

P0900S_ 75 98 4 5 800 2.2 150 50

P1100S_ 90 130 4 5 800 2.2 150 40

P1300S_ 120 160 4 5 800 2.2 150 40

P1500S_ 140 180 4 5 800 2.2 150 40

P1800S_ 170 220 4 5 800 2.2 150 30

P2300S_ 190 260 4 5 800 2.2 150 30

P2600S_ 220 300 4 5 800 2.2 150 30

P3100S_ 275 350 4 5 800 2.2 150 30

P3500S_ 320 400 4 5 800 2.2 150 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 30 500

SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Val ue Unit

DO-214AA T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 90 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

MicroCapacitance (MC) SC SIDACtor Device

®

Data Book and Design Guide

MicroCapacitance (MC) SC SIDACtor Device

The DO-214AA SC MC SIDACtor series is intended for applications sensitive to load values. Typically, high speed connections require a lower capacitance. C

O

values for the

MicroCapacitance device are 40% lower than a standard SC part.

This MC SIDACtor series is used to enable equipment to meet various regulatory requirements including GR 1089, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68). Contact factory regarding ITU K.20, K.21, and K.45.

* For surge ratings, see table below. ** Contact factory for release date.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

T

Vol ts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

P0080SC MC ** 6 25 4 5 800 2.2 50 55

P0300SC MC ** 25 40 4 5 800 2.2 50 35

P0640SC MC 58 77 4 5 800 2.2 150 60

P0720SC MC 65 88 4 5 800 2.2 150 60

P0900SC MC 75 98 4 5 800 2.2 150 60

P1100SC MC 90 130 4 5 800 2.2 150 50

P1300SC MC 120 160 4 5 800 2.2 150 50

P1500SC MC 140 180 4 5 800 2.2 150 50

P1800SC MC 170 220 4 5 800 2.2 150 40

P2300SC MC 190 260 4 5 800 2.2 150 40

P2600SC MC 220 300 4 5 800 2.2 150 40

P3100SC MC 275 350 4 5 800 2.2 150 40

P3500SC MC 320 400 4 5 800 2.2 150 40

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

C 500 400 200 150 100 30 500

MicroCapacitance (MC) SC SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

DO-214AA T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 90 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

MicroCapacitance (MC) SA SIDACtor Device

®

Data Book and Design Guide

MicroCapacitance (MC) SA SIDACtor Device

The DO-214AA SA MC SIDACtor series is intended for applications sensitive to load values. Typically, high speed connections require a lower capacitance. C

O

values for the

MicroCapacitance device are 40% lower than a standard SA part.

This MC SIDACtor series is used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA968 (formerly known as FCC Part 68).

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

T

Vol ts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

P0080SA MC 6 25 4 5 800 2.2 50 45

P0300SA MC 25 40 4 5 800 2.2 50 25

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

MicroCapacitance (MC) SA SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

DO-214AA T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 90 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

High Surge Current (D-rated) SIDACtor Device

®

Data Book and Design Guide

High Surge Current (D-rated) SIDACtor Device

DO-214AA SIDACtor solid state protection devices with a D surge rating protect telecommunications equipment such as modems, line cards, fax machines, and other CPE.

These SIDACtor devices withstand simultaneous surges incurred in GR 1089 lightning tests. (See "First Level Lightning Surge Test" on page 4-5.) Surge ratings are twice that of a device with a C surge rating. This allows a discrete surface mount version of Teccor’s patented “Y” configuration. (US Patent 4,905,119)

SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

* For surge ratings, see table below. ** Contact factory for release date.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Vol ts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

P0080SD ** 6 25 4 5 800 2.2 50 200

P0300SD ** 25 40 4 5 800 2.2 50 220

P0640SD ** 58 77 4 5 800 2.2 50 100

P0720SD ** 65 88 4 5 800 2.2 50 100

P0900SD ** 75 98 4 5 800 2.2 50 100

P1100SD 90 130 4 5 800 2.2 50 80

P1300SD 120 160 4 5 800 2.2 50 80

P1500SD 140 180 4 5 800 2.2 50 80

P1800SD 170 220 4 5 800 2.2 50 60

P2300SD 190 260 4 5 800 2.2 50 60

P2600SD 220 300 4 5 800 2.2 50 60

P3100SD 275 350 4 5 800 2.2 50 60

P3500SD 320 400 4 5 800 2.2 50 60

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

D 1000 800 400 300 200 50 1000

High Surge Current (D-rated) SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Val ue Unit

DO-214AA T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 90 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Compak Two-chip SIDACtor Device

®

Data Book and Design Guide

Compak Two-chip SIDACtor Device

The modified DO-214AA SIDACtor device provides low-cost, longitudinal protection.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-3 at 1 MHz with a 2 V bias.

• UL 60950 creepage requirements must be considered.

Electrical Parameters

Part

Number

V

DRM

Vol ts

V

S

Vol ts

V

DRM

Vol ts

V

S

Vol ts

V

T

Vol ts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

Pins1-2, 2-3 Pins 1-3 Pins 1-3

P3002CA 140 180 280 360 4 5 800 1 120 15

P6002CA 275 350 550 700 4 5 800 1 120 15

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

1

2

3

(T)

(R)

(G)

Compak Two-chip SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

Modified DO-214AA T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 85 °C/W

Pin 3

Pin 1

Pin 2

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Ethernet/10BaseT/100BaseT Protector

®

Data Book and Design Guide

Ethernet/10BaseT/100BaseT Protector

The DO-214AA SIDACtor Ethernet protection series is intended for applications sensitive to load values. Typically, high speed connections require a lower capacitance. C

O

values are

40% lower than standard devices.

SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias.

** Contact factory for release date of B-rated devices.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Vol ts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

P0642S_ 58 77 4 5 800 2.2 120 25

P0722S_ 65 88 4 5 800 2.2 120 25

P0902S_ 75 98 4 5 800 2.2 120 25

P1102S_ 90 130 4 5 800 2.2 120 20

P3002S_ 280 360 4 5 800 2.2 120 15

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B** 250 250 150 100 80 30 500

Ethernet/10BaseT/100BaseT Protector

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Val ue Unit

DO-214AA T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 90 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

SIDACtor Device

®

Data Book and Design Guide

SIDACtor Device

TO-92 SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, fax machines, and other CPE.

SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68)

.

* For individual “EA”, “EB”, and “EC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “EA” and “EB” product. “EC” capacitance is approximately 2x the listed value. The off-state capacitance of the P0080EB is equal to the “EC” device.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

P0080E_ 6 25 4 5 800 2.2 50 100

P0300E_ 25 40 4 5 800 2.2 50 110

P0640E_ 58 77 4 5 800 2.2 150 50

P0720E_ 65 88 4 5 800 2.2 150 50

P0900E_ 75 98 4 5 800 2.2 150 50

P1100E_ 90 130 4 5 800 2.2 150 40

P1300E_ 120 160 4 5 800 2.2 150 40

P1500E_ 140 180 4 5 800 2.2 150 40

P1800E_ 170 220 4 5 800 2.2 150 30

P2300E_ 190 260 4 5 800 2.2 150 30

P2600E_ 220 300 4 5 800 2.2 150 30

P3100E_ 275 350 4 5 800 2.2 150 30

P3500E_ 320 400 4 5 800 2.2 150 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Val ue Unit

TO-92

T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 90 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

MicroCapacitance (MC) SIDACtor Device

®

Data Book and Design Guide

MicroCapacitance (MC) SIDACtor Device

The TO-92 MC SIDACtor series is intended for applications sensitive to load values. Typically, high speed connections require a lower capacitance. C

O

values for MC devices

are 40% lower than a standard EC part.

This MC SIDACtor series is used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA968 (formerly known as FCC Part 68) without the need of series resistors.

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Vol ts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

P0640EC MC 58 77 4 5 800 2.2 150 60

P1500EC MC 140 180 4 5 800 2.2 150 50

P2600EC MC 220 300 4 5 800 2.2 150 40

P3100EC MC 275 350 4 5 800 2.2 150 40

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

C 500 400 200 150 100 50 500

MicroCapacitance (MC) SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

TO-92

T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 90 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Balanced Three-chip SIDACtor Device

®

Data Book and Design Guide

Balanced Three-chip SIDACtor Device

This balanced protector is a surface mount alternative to the modified TO-220 package. Based on a six-pin surface mount SOIC package, it uses Teccor’s patented “Y” (US Patent 4,905,119) configuration. It is available in surge current ratings up to 500 A.

SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

* For individual “UA”, “UB”, and “UC” surge ratings, see table below. ** Asymmetrical

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-3 and 1-4 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB” and “UC” capacitance is approximately 2x higher.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pFPins 1-3, 1-4 Pins 3-4

P1553U_ 130 180 130 180 8 5 800 2.2 150 40

P1803U_ 150 210 150 210 8 5 800 2.2 150 40

P2103U_ 170 250 170 250 8 5 800 2.2 150 40

P2353U_ 200 270 200 270 8 5 800 2.2 150 40

P2703U_ 230 300 230 300 8 5 800 2.2 150 30

P3203U_ 270 350 270 350 8 5 800 2.2 150 30

P3403U_ 300 400 300 400 8 5 800 2.2 150 30

P5103U_ 420 600 420 600 8 5 800 2.2 150 30

A2106U_3 ** 170 250 50 80 8 5 800 2.2 120 40

A5030U_3 ** 400 550 270 350 8 5 800 2.2 150 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

1

4

6

3

2

5

Balanced Three-chip SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

Modified MS-013 T

J

Operating Junction Temperature Range -40 to +125 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 60 °C/W

2

3

6

5

4

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Multiport SIDACtor Device

®

Data Book and Design Guide

Multiport SIDACtor Device

The multiport line protector is an integrated multichip solution for protecting multiple twisted pair from overvoltage conditions. Based on a six-pin surface mount SOIC package, it is equivalent to four discrete DO-214AA or two TO-220 packages. Available in surge current ratings up to 500 A, the multiport line protector is ideal for densely populated, high-speed line cards that cannot afford PCB inefficiencies or the use of series power resistors.

SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

* For individual “UA”, “UB”, and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM

, and VS is measured at 100 V/µs.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB” and “UC” capacitance is approximately 2x higher.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pFPins 1-2, 3-2, 4-5, 6-5 Pins 1-3, 4-6

P0084U_ 6 25 12 50 4 5 800 2.2 50 100

P0304U_ 25 40 50 80 4 5 800 2.2 50 110

P0644U_ 58 77 116 154 4 5 800 2.2 150 50

P0724U_ 65 88 130 176 4 5 800 2.2 150 50

P0904U_ 75 98 150 196 4 5 800 2.2 150 50

P1104U_ 90 130 180 260 4 5 800 2.2 150 40

P1304U_ 120 160 240 320 4 5 800 2.2 150 40

P1504U_ 140 180 280 360 4 5 800 2.2 150 40

P1804U_ 170 220 340 440 4 5 800 2.2 150 30

P2304U_ 190 260 380 520 4 5 800 2.2 150 30

P2604U_ 220 300 440 600 4 5 800 2.2 150 30

P3104U_ 275 350 550 700 4 5 800 2.2 150 30

P3504U_ 320 400 640 800 4 5 800 2.2 150 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

1

(R1)

2

(G

1

)

3

(T

1

)

6

(T

2

)

4

(R

2

)

5

(G

2

)

Multiport SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

Modified MS-013 T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 60 °C/W

1

2

3

6

5

4

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Multiport Balanced SIDACtor Device

®

Data Book and Design Guide

Multiport Balanced SIDACtor Device

This multiport balanced protector is a surface mount alternative to the modified TO-220 package. It is based on a six-pin surface mount SOIC package and uses Teccor’s patented “Y” (US Patent 4,905,119) configuration. It is available in surge current ratings up to 500 A.

SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

* For individual “UA”, “UB”, and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB” and “UC” capacitance is approximately 10 pF higher.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

Electrical Parameters — Symmetrical

Part

Number *

V

DRM

Volts

V

S

Volts

V

DRM

Volt

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

Pins 1-2, 2-3, 1-3 Pins 4-5, 5-6, 4-6 Pins 3-2, 6-5, 1-2, 4-5

P1556U_ 130 180 130 180 8 5 800 2.2 150 50

P1806U_ 150 210 150 210 8 5 800 2.2 150 50

P2106U_ 170 250 170 250 8 5 800 2.2 150 40

P2356U_ 200 270 200 270 8 5 800 2.2 150 40

P2706U_ 230 300 230 300 8 5 800 2.2 150 40

P3206U_ 270 350 270 350 8 5 800 2.2 150 40

P3406U_ 300 400 300 400 8 5 800 2.2 150 40

P5106U_ 420 600 420 600 8 5 800 2.2 150 40

Electrical Parameters — Asymmetrical

Part

Number *

V

DRM

Volts

V

S

Volts

V

DRM

Volt

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

Pins 1-2, 2-3, 4-5,

5-6

Pins 4-6, 1-3

A2106U_6 170 250 50 80 3.5 5 800 2.2 120 40

A5030U_6 400 550 270 350 3.5 5 800 2.2 150 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

1

4

6

3

2

5

Multiport Balanced SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

Modified MS-013 T

J

Operating Junction Temperature Range -40 to +125 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 60 °C/W

1

2

3

6

5

4

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

SIDACtor Device

®

Data Book and Design Guide

SIDACtor Device

The modified TO-220 Type 61 SIDACtor solid state protection device can be used in telecommunication protection applications that do not reference earth ground.

SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Electrical Parameters

Part

Number *

V

DRM

Vol ts

V

S

Vol ts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

P2000AA61 180 220 4 5 800 2.2 150 30

P2200AA61 200 240 4 5 800 2.2 150 30

P2400AA61 220 260 4 5 800 2.2 150 30

P2500AA61 240 290 4 5 800 2.2 150 30

P3000AA61 270 330 4 5 800 2.2 150 30

P3300AA61 300 360 4 5 800 2.2 150 30

Surge Ratings

Series

I

PP

0.2x310 µs Amps

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

5x320 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz

Amps

di/dt

Amps/µs

A 20 150 150 90 50 75 45 20 500

SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Val ue Unit

Modified

TO-220 Type 61

T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 50 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Two-chip SIDACtor Device

®

Data Book and Design Guide

Two-chip SIDACtor Device

The two-chip modified TO-220 SIDACtor solid state device protects telecommunication equipment in applications that reference Tip and Ring to earth ground but do not require balanced protection.

SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

* For individual “AA”, “AB”, and “AC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “AA” and “AB” product. “AC” capacitance is approximately 2x the listed value.

Electrical Parameters

Part

Number *

V

DRM

Vol ts

V

S

Volts

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pFPins 1-2, 3-2 Pins 1-3

P0602A_ 25 40 50 80 4 5 800 2.2 50 110

P1402A_ 58 77 116 154 4 5 800 2.2 150 50

P1602A_ 65 95 130 190 4 5 800 2.2 150 50

P2202A_ 90 130 180 260 4 5 800 2.2 150 40

P2702A_ 120 160 240 320 4 5 800 2.2 150 40

P3002A_ 140 180 280 360 4 5 800 2.2 150 40

P3602A_ 170 220 340 440 4 5 800 2.2 150 40

P4202A_ 190 250 380 500 4 5 800 2.2 150 30

P4802A_ 220 300 440 600 4 5 800 2.2 150 30

P6002A_ 275 350 550 700 4 5 800 2.2 150 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

1

2

3

(T)

(R)

(G)

Two-chip SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Va lue Unit

Modified

TO-220

T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 50 °C/W

PIN 1

PIN 2

PIN 3

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Two-chip MicroCapacitance (MC) SIDACtor Device

®

Data Book and Design Guide

Two-chip MicroCapacitance (MC) SIDACtor Device

The two-chip modified TO-220 MC SIDACtor solid state device protects telecommunication equipment in applications that reference Tip and Ring to earth ground but do not require balanced protection.

SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.

Electrical Parameters

Part

Number *

V

DRM

Vol ts

V

S

Volts

V

DRM

Vol ts

V

S

Vol ts

V

T

Vol ts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pFPins 1-2, 3-2 Pins 1-3

P0602AC MC 25 40 50 80 4 5 800 2.2 50 60

P1402AC MC 58 77 116 154 4 5 800 2.2 150 60

P1602AC MC 65 95 130 190 4 5 800 2.2 150 60

P2202AC MC 90 130 180 260 4 5 800 2.2 150 50

P2702AC MC 120 160 240 320 4 5 800 2.2 150 50

P3002AC MC 140 180 280 360 4 5 800 2.2 150 50

P3602AC MC 170 220 340 440 4 5 800 2.2 150 40

P4202AC MC 190 250 380 500 4 5 800 2.2 150 40

P4802AC MC 220 300 440 600 4 5 800 2.2 150 40

P6002AC MC 275 350 550 700 4 5 800 2.2 150 40

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

C 500 400 200 150 100 50 500

1

2

3

(T)

(R)

(G)

Two-chip MicroCapacitance (MC) SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Va lue Unit

Modified

TO-220

T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 50 °C/W

PIN 1

PIN 2

PIN 3

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Balanced Three-chip SIDACtor Device

®

Data Book and Design Guide

Balanced Three-chip SIDACtor Device

The three-chip modified TO-220 SIDACtor balanced solid state device is designed for telecommunication protection systems that reference Tip and Ring to earth ground. Applications include any piece of transmission equipment that requires balanced protection. This device is built using Teccor’s patented “Y” (US Patent 4,905,119) configuration.

The SIDACtor device is used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20,K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

* For individual “AA”, “AB”, and “AC” surge ratings, see table below. ** Asymmetrical

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “AA” product. “AB” and “AC” capacitance is approximately 2x the listed value.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

DRM

Volts

V

S

Volts

V

T

Vol ts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pFPins 1-2, 2-3 Pins 1-3

P1553A_ 130 180 130 180 8 5 800 2.2 150 40

P1803A_ 150 210 150 210 8 5 800 2.2 150 40

P2103A_ 170 250 170 250 8 5 800 2.2 150 40

P2353A_ 200 270 200 270 8 5 800 2.2 150 40

P2703A_ 230 300 230 300 8 5 800 2.2 150 30

P3203A_ 270 350 270 350 8 5 800 2.2 150 30

P3403A_ 300 400 300 400 8 5 800 2.2 150 30

P5103A_ 420 600 420 600 8 5 800 2.2 150 30

A2106A_3 ** 170 250 50 80 8 5 800 2.2 120 40

A5030A_3 ** 400 550 270 350 8 5 800 2.2 150 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

1

2

3

Balanced Three-chip SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Va lue Unit

Modified

TO-220

T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 50 °C/W

PIN 1

PIN 2

PIN 3

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Balanced Three-chip MicroCapacitance (MC) SIDACtor Device

®

Data Book and Design Guide

Balanced Three-chip MicroCapacitance (MC) SIDACtor Device

The balanced three-chip TO-220 MC SIDACtor solid state device protects telecommunication equipment in high-speed applications that are sensitive to load values and that require a lower capacitance. CO values for the MC are 40% lower than a standard AC part.

This MC SIDACtor series is used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68) without the need of series resistors.

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pFPins 1-2, 2-3 Pins 1-3

P1553AC MC 130 180 130 180 8 5 800 2.2 150 40

P1803AC MC 150 210 150 210 8 5 800 2.2 150 40

P2103AC MC 170 250 170 250 8 5 800 2.2 150 40

P2353AC MC 200 270 200 270 8 5 800 2.2 150 40

P2703AC MC 230 300 230 300 8 5 800 2.2 150 30

P3203AC MC 270 350 270 350 8 5 800 2.2 150 30

P3403AC MC 300 400 300 400 8 5 800 2.2 150 30

P5103AC MC 420 600 420 600 8 5 800 2.2 150 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

C 500 400 200 150 100 50 500

1

2

3

Balanced Three-chip MicroCapacitance (MC) SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Va lue Unit

Modified

TO-220

T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 50 °C/W

PIN 1

PIN 2

PIN 3

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

LCAS Asymmetrical Multiport Device

®

Data Book and Design Guide

LCAS Asymmetrical Multiport Device

This is an integrated multichip solution for protecting multiple twisted pair from overvoltage conditions. Based on a six-pin surface mount SOIC package, it is equivalent to four discrete DO-214AA or two TO-220 packages. Available in surge current ratings up to 500 A, the multiport line protector is ideal for densely populated line cards that cannot afford PCB inefficiencies or the use of series power resistors.

For a diagram of an LCAS (Line Circuit Access Switch) application, see Figure 3.21.

* For individual “UA”, “UB”, and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB” and “UC” capacitance is approximately 2x higher.

Electrical Parameters

Part

Number *

V

DRM

Vol ts

V

S

Vol ts

V

DRM

Vol ts

V

S

Vol ts

V

T

Vol ts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

Pins 3-2, 6-5 Pins 1-2, 4-5 Pins 3-2, 6-5, 1-2, 4-5

A1220U_4 100 130 180 220 4 5 800 2.2 120 30

A1225U_4 100 130 230 290 4 5 800 2.2 120 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

1

(R1)

2

(G

1

)

3

(T

1

)

6

(T

2

)

4

(R

2

)

5

(G

2

)

LCAS Asymmetrical Multiport Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

Modified MS-013 T

J

Operating Junction Temperature Range -40 to +125 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 60 °C/W

1

2

3

6

5

4

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

LCAS Asymmetrical Discrete Device

®

Data Book and Design Guide

LCAS Asymmetrical Discrete Device

These DO-214AA SIDACtor devices are intended for LCAS (Line Circuit Access Switch) applications that require asymmetrical protection in discrete (individual) packages. They enable the protected equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, K.45, IEG 60950, UL 60950, and TIA-968.

* For individual “SA”, “SB”, and “SC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB” product. “SC” capacitance is approximately 10 pF higher.

Electrical Parameters

Part

Number *

V

DRM

Vol ts

V

S

Vol ts

V

T

Vol ts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

P1200S_ 100 130 4 5 800 2.2 120 40

P2000S_ 180 220 4 5 800 2.2 120 30

P2500S_ 230 290 4 5 800 2.2 120 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

LCAS Asymmetrical Discrete Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

DO-214AA T

J

Operating Junction Temperature Range -40 to +125 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 60 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Four-Port Balanced Three-chip Protector

®

Data Book and Design Guide

Four-Port Balanced Three-chip Protector

This hybrid Single In-line Package (SIP) protects four twisted pairs from overcurrent and overvoltage conditions. Comprised of twelve discrete DO-214AA SIDACtor devices and eight TeleLink surface mount fuses, it is ideal for densely populated line cards that cannot afford PCB inefficiencies or the use of series power resistors. Surge current ratings up to 500 A are available.

* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below. ** Asymmetrical

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 4-3 and Pins 2-3 at 1 MHz with a 2 V bias and is a typical value for “ZA” product. “ZB” and “ZC” capacitance is approximately 10 pF higher.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

1

2

3

4

5

Tip

Gnd

Ring

F2

F1

Z1

Z3

Z2

6

7

8

9

10

Tip

Gnd

Ring

F4

F3

Z4

Z6

Z5

11

12

13

14

15

Tip

Gnd

Ring

F6

F5

Z7

Z9

Z8

16

17

18

19

20

Tip

Gnd

Ring

F8

F7

Z10

Z12

Z11

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

Pins 2-3, 4-3, 7-8, 9-8,

12-13, 14-13, 17-18, 19-18

Pins 2-4, 7-9,

12-14, 17-19

Pins 1-3

P1553Z_ 130 180 130 180 8 5 800 2.2 150 40

P1803Z_ 150 210 150 210 8 5 800 2.2 150 40

P2103Z_ 170 250 170 250 8 5 800 2.2 150 40

P2353Z_ 200 270 200 270 8 5 800 2.2 150 40

P2703Z_ 230 300 230 300 8 5 800 2.2 150 30

P3203Z_ 270 350 270 350 8 5 800 2.2 150 30

P3403Z_ 300 400 300 400 8 5 800 2.2 150 30

A2106Z_ ** 170 250 50 80 8 5 800 2.2 120 40

A5030Z_ ** 400 550 270 350 8 5 800 2.2 150 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

Four-Port Balanced Three-chip Protector

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Val ue Unit

SIP T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 90 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Value

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Waveform

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Four-Port Longitudinal Two-chip Protector

®

Data Book and Design Guide

Four-Port Longitudinal Two-chip Protector

This hybrid Single In-line Package (SIP) protects four twisted pairs from overcurrent and overvoltage conditions. Comprised of eight discrete DO-214AA SIDACtor devices and eight TeleLink surface mount fuses, it is ideal for densely populated line cards that cannot afford PCB inefficiencies or the use of series power resistors. Surge current ratings up to 500 A are available.

* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 4-3 and Pins 2-3 at 1 MHz with a 2 V bias and is a typical value for “ZA” product. “ZB” and “ZC” capacitance is approximately 2x higher.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

• Lower capacitance MC versions may be available. Contact factory for further information.

1

2

3

4

5

Tip

Gnd

Ring

F2

F1

Z1

Z2

6

7

8

9

10

Tip

Gnd

Ring

F4

F3

Z3

Z4

11

12

13

14

15

Tip

Gnd

Ring

F6

F5

Z5

Z6

16

17

18

19

20

Tip

Gnd

Ring

F8

F7

Z7

Z8

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

Pins 2-3, 4-3, 7-8, 9-8,

12-13, 14-13, 17-18, 19-18

Pins 2-4, 7-9,

12-14, 17-19

Pins

2-3, 3-4

P0602Z_ 25 40 50 80 4 5 800 2.2 50 110

P1402Z_ 58 77 116 154 4 5 800 2.2 150 50

P1602Z_ 65 95 130 190 4 5 800 2.2 150 50

P2202Z_ 90 130 180 260 4 5 800 2.2 150 40

P2702Z_ 120 160 240 320 4 5 800 2.2 150 40

P3002Z_ 140 180 280 360 4 5 800 2.2 150 40

P3602Z_ 160 220 320 440 4 5 800 2.2 150 40

P4202Z_ 190 250 380 500 4 5 800 2.2 150 30

P4802Z_ 220 300 440 600 4 5 800 2.2 150 30

P6002Z_ 275 350 550 700 4 5 800 2.2 150 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

Four-Port Longitudinal Two-chip Protector

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Val ue Unit

SIP T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 90 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Value

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Waveform

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Four-Port Metallic Line Protector

®

Data Book and Design Guide

Four-Port Metallic Line Protector

The four-port hybrid Single In-line Package (SIP) line protector protects multiple twisted pair from overcurrent and overvoltage conditions. Based on a SIP, it is equivalent to four discrete DO-214AA SIDACtor devices and four surface mount fuses. Available in surge current ratings up to 500 A, this four-port SIP line protector is ideal for densely populated line cards that cannot afford PCB inefficiencies or the use of series power resistors.

* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM

.

• V

S

is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “ZA” and “ZB” product. “ZC” capacitance is approximately 2x the listed value.

• Lower capacitance MC versions may be available. Contact factory for further information.

1

3

2

Tip

Ring

F1

Z1

4

6

5

Tip

Ring

F2

Z2

7

9

8

Tip

Ring

F3

Z3

10

12

11

Tip

Ring

F4

Z4

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

P0080Z_ 6 25 4 5 800 2.2 50 100

P0300Z_ 25 40 4 5 800 2.2 50 110

P0640Z_ 58 77 4 5 800 2.2 150 50

P0720Z_ 65 88 4 5 800 2.2 150 50

P0900Z_ 75 98 4 5 800 2.2 150 50

P1100Z_ 90 130 4 5 800 2.2 150 40

P1300Z_ 120 160 4 5 800 2.2 150 40

P1500Z_ 140 180 4 5 800 2.2 150 40

P1800Z_ 170 220 4 5 800 2.2 150 30

P2300Z_ 190 260 4 5 800 2.2 150 30

P2600Z_ 220 300 4 5 800 2.2 150 30

P3100Z_ 275 350 4 5 800 2.2 150 30

P3500Z_ 320 400 4 5 800 2.2 150 30

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

Four-Port Metallic Line Protector

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

SIP T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 90 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Value

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Waveform

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Fixed Voltage SLIC Protector

®

Data Book and Design Guide

Fixed Voltage SLIC Protector

These DO-214AA unidirectional protectors are constructed with a SIDACtor device and an integrated diode. They protect SLICs (Subscriber Line Interface Circuits) from damage during transient voltage activity and enable line cards to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA968 (formerly known as FCC Part 68).

For specific design criteria, see details in Figure 3.21.

* For individual “SA” and “SC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• V

DRM

is measured at I

DRM.

• VS and VF are measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB” product. “SC” capacitance is approximately 2x the listed value.

• Parallel capacitive loads may affect electrical parameters.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

T

Volts

V

F

Vol ts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

P0641S_ 58 77 4 5 5 800 1 120 70

P0721S_ 65 88 4 5 5 800 1 120 70

P0901S_ 75 98 4 5 5 800 1 120 70

P1101S_ 95 130 4 5 5 800 1 120 70

Surge Ratings (Preliminary Data)

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

C 500 400 200 120 100 50 500

(T/R)

(G)

Cathode

Fixed Voltage SLIC Protector

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Val ue Unit

DO-214AA T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 90 °C/W

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

DRM

V

DRM

V

T

+V

+I

V

S

I

S

I

T

VF

-V

-I

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Twin SLIC Protector

®

Data Book and Design Guide

Twin SLIC Protector

Subscriber Line Interface Circuits (SLIC) are highly susceptible to transient voltages, such as lightning and power cross conditions. To minimize this threat, Teccor provides this dualchip, fixed-voltage SLIC protector device.

For specific design criteria, see details in Figure 3.23.

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• V

DRM

is measured at I

DRM.

• VS and VF are measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured across pins 1-2 or 2-3 at 1 MHz with a 2 V bias. Capacitance across pins 1-3 is approximately half.

• Parallel capacitive loads may affect electrical parameters.

• Compliance with GR 1089 or UL 60950 power cross tests may require special design considerations. Contact the factory for further information.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

DRM

Volts

V

S

Volts

V

T

Volts

V

F

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pFPins 1-2, 2-3 Pins 1-3

P0641CA2 58 77 58 77 4 5 5 800 1 120 60

P0721CA2 65 88 65 88 4 5 5 800 1 120 60

P0901CA2 75 98 75 98 4 5 5 800 1 120 60

P1101CA2 95 130 95 130 4 5 5 800 1 120 60

Surge Ratings (Preliminary Data)

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

1

3

2

(T)

(G)

(R)

Twin SLIC Protector

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

Modified DO-214AA T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 85 °C/W

Pin 3

Pin 1

Pin 2

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

DRM

V

DRM

V

T

+V

+I

V

S

I

S

I

T

VF

-V

-I

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Multiport SLIC Protector

®

Data Book and Design Guide

Multiport SLIC Protector

This multiport line protector is designed as a single-package solution for protecting multiple twisted pair from overvoltage conditions. Based on a six-pin SOIC package, it is equivalent to four discrete DO-214AA packages. Available in surge current ratings up to 500 A for a 2x10 µs event, the multiport line protector is ideal for densely populated line cards that cannot afford PCB inefficiencies or the use of series power resistors.

For specific design criteria, see details in Figure 3.24.

* For individual “UA” and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• V

DRM

is measured at I

DRM.

• VS and VF are measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured across pins 1-2, 2-3, 4-5, or 5-6 at 1 MHz with a 2 V bias and is a typical value. Capacitance across pins 1-3 or 4-6 is approximately half. “UC” capacitance is approximately 2x the listed value for “UA” product.

• Parallel capacitive loads may affect electrical parameters.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

DRM

Volts

V

S

Volts

V

T

Volts

V

F

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

Pins

1-2, 2-3,

4-5, 5-6

Pins

1-3, 4-6

P0641U_ 58 77 58 77 4 5 5 800 1 120 70

P0721U_ 65 88 65 88 4 5 5 800 1 120 70

P0901U_ 75 98 75 98 4 5 5 800 1 120 70

P1101U_ 95 130 95 130 4 5 5 800 1 120 70

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

C 500 400 200 120 100 50 500

1

4

6

3

2

5

(T

1

)

(R

1

)

(G

1

)

(T

2

)

(R

2

)

(G2)

Multiport SLIC Protector

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

Modified MS-013 T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 60 °C/W

1

2

3

6

5

4

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

DRM

V

DRM

V

T

+V

+I

V

S

I

S

I

T

VF

-V

-I

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Battrax SLIC Protector

®

Data Book and Design Guide

Battrax SLIC Protector

This solid state protection device can be referenced to either a positive or negative voltage source. The B1xx0C_ is for a -V

REF

and the B2050C_ is for a +V

REF

. Designed using an

SCR and a gate diode, the B1xx0C_ Battrax begins to conduct at |-V

REF

| + |-1.2 V| while the

B2050C_ Battrax begins to conduct at |+V

REF

|+|1.2V|.

For a diagram of a Battrax application, see Figure 3.29.

* For individual “CA” and “CC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• I

PP

ratings assume V

REF

= ±48 V.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “CC” product is approximately 2x the listed value.

• Positive Battrax information is preliminary data.

• V

REF

maximum value for the negative Battrax is -200 V.

• V

REF

maximum value for the positive Battrax is 110 V.

Pin 3

(-V

REF

)

Pin 1

(Line)

Pin 2

(Ground)

Gate

-Battrax

B1xx0C_

Pin 3

(+V

REF

)

Pin 2

(Ground)

Pin 1

(Line)

+Battrax

B2050C_

Electrical Parameters

Part

Number *

V

DRM

Vol ts

V

S

Vol ts

V

T

Volts

I

DRM

µAmps

I

GT

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

B1100C_ |-V

REF

| + |-1.2 V| |-V

REF

| + |-10 V| 4 5 100 1 100 50

B1160C_ |-V

REF

| + |-1.2 V| |-V

REF

| + |-10 V| 4 5 100 1 160 50

B1200C_ |-V

REF

| + |-1.2 V| |-V

REF

| + |-10 V| 4 5 100 1 200 50

B2050C_ |+V

REF

| + |1.2 V| |+V

REF

| + |10 V| 4 5 50 1 5 50

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 60 50 40 500

C 500 400 200 150 100 50 500

Battrax SLIC Protector

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

Modified DO-214AA T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 85 °C/W

Pin 3

(V

REF

)

Pin 1

(Line)

Pin 2

(Ground)

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

DRM

V

DRM

V

T

+V

+I

V

S

I

S

I

T

-V

-I

V-I Characteristics for Negative Battrax

I

H

I

DRM

V

DRM

V

T

+V

+I

V

S

I

S

I

T

-V

-I

V-I Characteristics for Positive Battrax

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Battrax Dual Negative SLIC Protector

®

Data Book and Design Guide

Battrax Dual Negative SLIC Protector

This solid state Battrax protection device is referenced to a negative voltage source. Its dual-chip package also includes internal diodes for transient protection from positive surge events.

For a diagram of a Battrax application, see Figure 3.27.

* For individual “UA” and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• I

PP

ratings assume a V

REF

= -48 V.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.

• V

REF

maximum value for the B1101, B1161, and/or B1201 is -200 V.

** Call factory for release date.

Electrical Parameters

Part

Number *

V

DRM

Vol ts

V

S

Vol ts

V

T

Volts

V

F

Vol ts

I

DRM

µAmps

I

GT

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

B1101U_ |-V

REF

| + |-1.2V| |-V

REF

| + |-10V| 4 5 5 100 1 100 50

B1161U_ |-V

REF

| + |-1.2V| |-V

REF

| + |-10V| 4 5 5 100 1 160 50

B1201U_ |-V

REF

| + |-1.2V| |-V

REF

| + |-10V| 4 5 5 100 1 200 50

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

C** 500 400 200 120 100 50 500

1 32

5

(T) (-V

REF

) (R)

(G)

Battrax Dual Negative SLIC Protector

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

Modified MS-013 T

J

Operating Junction Temperature Range -40 to +125 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 60 °C/W

1

2

3

6

5

4

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

DRM

V

DRM

V

T

+V

+I

V

S

I

S

I

T

VF

-V

-I

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Battrax Dual Positive/Negative SLIC Protector

®

Data Book and Design Guide

Battrax Dual Positive/Negative SLIC Protector

This Battrax device protects Subscriber Line Interface Circuits (SLIC) that use both a positive and negative Ring voltage. It limits transient voltages with rise times of 100 V/ µs to V

REF

±10 V.

Teccor’s six-pin Battrax devices are constructed using four SCRs and four gate diodes. The SCRs conduct when a voltage that is more negative than -V

REF

(and/or more

positive than +V

REF

) is applied to the cathode (Pins 1 and 3) of the SCR. During conduction, the SCRs appear as a low-resistive path which forces all transients to be shorted to ground.

For a diagram of a Battrax application, see Figure 3.30.

* For individual “UA” and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• I

PP

ratings assume a V

REF

= ±48 V.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.

• Positive Battrax information is preliminary data.

• V

REF

maximum value for the negative Battrax is -200 V.

• V

REF

maximum value for the positive Battrax is 110 V.

** Call factory for release date.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

GT

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

B3104U_ |-V

REF

| + |±1.2V| |-V

REF

| + |±10V| 4 5 100 1 100 50

B3164U_ |-V

REF

| + |±1.2V| |-V

REF

| + |±10V| 4 5 100 1 160 50

B3204U_ |-V

REF

| + |±1.2V| |-V

REF

| + |±10V| 4 5 100 1 200 50

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

C** 500 400 200 120 100 50 500

1

3

2

(T)

(-V

REF

)

(R)

Ground

4, 6

5

(+V

REF

)

Battrax Dual Positive/Negative SLIC Protector

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

Modified MS-013 T

J

Operating Junction Temperature Range -40 to +125 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 60 °C/W

1

2

3

6

5

4

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

Positive Battrax Characteristics

Negative Battrax Characteristics

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Battrax Quad Negative SLIC Protector

®

Data Book and Design Guide

Battrax Quad Negative SLIC Protector

This Battrax device is an integrated overvoltage protection solution for SLIC-based (Subscriber Line Interface Circuit) line cards. This six-pin device is constructed using four SCRs and four gate diodes.

The device is referenced to V

BAT

and conducts when a voltage that is more negative

than -V

REF

is applied to the cathode (pins 1, 3, 4, or 6) of the SCR. During conduction, all negative transients are shorted to Ground. All positive transients are passed to Ground by steering diodes.

For specific diagrams showing these Battrax applications, see Figure 3.28.

* For individual “UA” and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• I

PP

ratings assume a V

REF

= ±48 V.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.

• V

REF

maximum value for the negative Battrax is -200 V.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

GT

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

B1101U_4 |-V

REF

| + |-1.2V| |-V

REF

| + |-10V| 4 5 100 1 100 50

B1161U_4 |-V

REF

| + |-1.2V| |-V

REF

| + |-10V| 4 5 100 1 160 50

B1201U_4 |-V

REF

| + |-1.2V| |-V

REF

| + |-10V| 4 5 100 1 200 50

Surge Ratings

Series

I

PP

2x10 µs

Amps

I

PP

8x20 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

C 500 400 200 120 100 50 500

1

(T)

3

(R)

2

(-V

REF

)

Ground

5

(T)

6

(R)

4

Battrax Quad Negative SLIC Protector

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Valu e Unit

Modified MS-013 T

J

Operating Junction Temperature Range -40 to +125 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 60 °C/W

1

2

3

6

5

4

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

Positive Battrax Characteristics

Negative Battrax Characteristics

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

CATV and HFC SIDACtor Device

®

Data Book and Design Guide

CATV and HFC SIDACtor Device

This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package. It protects equipment located in the severe surge environment of Community Antenna TV (CATV) applications.

Used in Hybrid Fiber Coax (HFC) applications, this device replaces the gas tube traditionally used for station protection, because a SIDACtor device has a much tighter voltage tolerance.

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

Pins 1-3

P1400AD 120 160 3 5 800 2.2 50 200

P1800AD 170 220 5.5 5 800 2.2 50 150

Surge Ratings

Series

I

PP

8x20 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz

Amps

di/dt

Amps/µs

D 1000 250 120 500

13

CATV and HFC SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Va lue Unit

Modified

TO-220

T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 60 °C/W

1

3

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

High Surge Current SIDACtor Device

®

Data Book and Design Guide

High Surge Current SIDACtor Device

This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package. It protects equipment located in the severe surge environment of Community Antenna TV (CATV) applications.

This device can replace the gas tubes traditionally used for station protection because SIDACtor devices have much tighter voltage tolerances.

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

Pins 1-3

P6002AD 550 700 5.5 5 800 2.2 50 60

1

2

3

(T)

(R)

(G)

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

T

Volts

I

DRM

µAmps

I

S

mAmps

I

T

Amps

I

H

mAmps

C

O

pF

Pins 1-3

P3100AD 280 360 5.5 5 800 2.2 120 115

Surge Ratings

Series

I

PP

8x20 µs

Amps

I

PP

10x1000 µs

Amps

I

TSM

60 Hz

Amps

di/dt

Amps/µs

D 1000 250 120 1000

High Surge Current SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Note: P6002AD is shown. P3100AD has no center lead.

Thermal Considerations

Package Symbol Parameter Va lue Unit

Modified

TO-220

T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

R

qJA

Thermal Resistance: Junction to Ambient 60 °C/W

PIN 1

PIN 2

PIN 3

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

CATV Line Amplifiers/Power Inserters SIDACtor Device

®

Data Book and Design Guide

CATV Line Amplifiers/Power Inserters SIDACtor Device

This SIDACtor device is a 5000 A solid state protection device offered in a non-isolated TO-218 package. It protects equipment located in the severe surge environment of CATV (Community Antenna TV) applications.

In CATV line amplifiers and power inserters, this device can replace the gas tubes traditionally used for station protection because SIDACtor devices have much tighter voltage tolerances.

* For surge ratings, see table below. ** I

T

is a free air rating; heat sink IT rating is 25 A.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. I

PP

applies to -40 °C through +85 °C temperature range.

• I

PP

is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• V

DRM

is measured at I

DRM.

• VS is measured at 100 V/µs.

• Special voltage (V

S

and V

DRM

) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Electrical Parameters

Part

Number *

V

DRM

Volts

V

S

Volts

V

T

Vol ts

I

DRM

µAmps

I

S

mAmps

I

T

Amps **

I

H

mAmps

C

O

pF

P1900ME 140 220 4 5 800 2.2/25 50 750

P2300ME 180 260 4 5 800 2.2/25 50 750

Surge Ratings

Series

I

PP

8x20 µs

Amps

I

TSM

60 Hz Amps

di/dt

Amps/µs

E 5000 400 500

12

CATV Line Amplifiers/Power Inserters SIDACtor Device

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

* R

qJC

rating assumes the use of a heat sink and on state mode for extended time at 25 A, with average power dissipation of 29.125 W.

Thermal Considerations

Package Symbol Parameter Val ue Unit

TO-218

T

J

Operating Junction Temperature Range -40 to +150 °C

T

S

Storage Temperature Range -65 to +150 °C

T

C

Maximum Case Temperature 100 °C

R

qJC *

Thermal Resistance: Junction to Case 1.7 °C/W

R

qJA

Thermal Resistance: Junction to Ambient 56 °C/W

1

2

3

2

(No Connection)

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

I

H

I

T

I

S

I

DRM

V

DRM

V

T

+V

-V

+I

-I

V

S

V-I Characteristics

50

100

0

t

r

t

d

0

Peak Val u e

Half Value

t – Time (µs)

I

PP

– Peak Pulse Current – %I

PP

tr = rise time to peak value t

d

= decay time to half value

Waveform = t

r

x t

d

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

0

2

4

6

8

10

12

14

Junction Temperature (TJ) – ˚C

Percent of V

S

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (TC) – ˚C

Ratio of

I

H

I

H

(T

C

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

TeleLink Fuse

®

Data Book and Design Guide

TeleLink Fuse

The TeleLink Surface Mount (SM) surge resistant fuse offers circuit protection without requiring a series resistor. When used in conjunction with the SIDACtor Transient Voltage Suppressor (TVS), the TeleLink SM fuse and the SIDACtor TVS provide a complete regulatory-compliant solution for standards such as GR 1089, TIA-968 (formerly known as FCC Part 68), UL 60950, and ITU K.20 and K.21. No series resistor is required for the F1250T and F1251T to comply with these standards.

Contact factory for enhanced K.20 and K.21 details.

* Interrupt test characterized at 50° to 70° phase angle. Phase angles approximating 90° may result in damage to the body of the fuse.

Notes:

• The Tel eLink SM fuse is designed to carry 100% of its rated current for four hours and 250% of its rated current for one second minimum and 120 seconds maximum. Typical time is four to 10 seconds. For optimal performance, an operating current of 80% or less is recommended.

• I

2

t is a non-repetitive RMS surge current rating for a period of 16.7 ms.

Notes:

• Typical inductance @ 4 µH up to 500 MHz.

• Resistance changes 0.5% for every °C.

• Resistance is measured at 10% rated current.

Surge Ratings

Tel eL in k SM Fuse

I

PP

2x10 µs

Amps

I

PP

10x160 µs

Amps

I

PP

10x560 µs

Amps

I

PP

10x1000 µs

Amps

F0500T not rated 75 45 35

F1250T 500 160 115 100

F1251T 500 160 115 100

Interrupting Values

Tel eL in k SM

Fuse

Voltage

Rating

Current

Rating

I2t Measured

at DC Rated

Volta ge

Interrupting Rating

Voltage, Current MIN TYP MAX

F0500T 250 V 500 mA 1.3 A

2

s 600 V, 40 A 1 ms 2 ms 60 ms

F1250T 250 V 1.25 A 22.2 A

2

s 600 V, 60 A * 1 ms 2 ms 60 ms

F1251T 250 V 2 A 30 A

2

s 600 V, 60 A * 1 ms 2 ms 60 ms

Resistance Ratings

TeleL ink SM Fuse

Typical Voltage Drop

@ Rated Current

DC Cold Resistance

MIN MAX

F0500T 0.471 V 0.420 W 0.640 W

F1250T 0.205 V 0.107 W 0.150 W

F1 251T 0.11 0 V 0 .050 W 0.100 W

TeleLink Fuse

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Qualification Data

The F1250T and F1251T meet the following test conditions per GR 1089 without additional series resistance. However, in-circuit test verification is required. Note that considerable heating may occur during Test 4 of the Second Level AC Power Fault Test.

* Test 5 simulates a high impedance induction fault. For specific information, please contact Teccor Electronics.

Notes:

• Power fault tests equal or exceed the requirements of UL 60950 3rd edition.

• Test 4 is intended to produce a maximum heating effect. Temperature readings can exceed 150 °C.

• Test 2 may be dependent on the closing angle of the voltage source. Fuse is characterized at 50° to 70°. Closing angles approximating 90° may result in damage to the body of the fuse.

• Use caution when routing internal traces adjacent to the F1250T and F1251T.

First Level Lightning Surge Test

Test

Surge Voltage

Volts

Wave-form

µs

Surge Current

Amps

Repetitions Each

Polarity

1 ±600 10x1000 100 25

2 ±1000 10x360 100 25

3 ±1000 10x1000 100 25

4 ±2500 2x10 500 10

5 ±1000 10x360 25 5

Second Level Lightning Surge Test

Test

Surge Voltage

Volts

Wave-form

µs

Surge Current

Amps

Repetitions Each

Polarity

1 ±5000 2x10 500 1

First Level AC Power Fault Test

Test

Applied Voltage, 60 Hz

V

RMS

Short Circuit Current

Amps

Duration

1500.3315 min

2 100 0.17 15 min

3 200, 400, 600 1 at 600 V 60 applications, 1 s each

4 1000 1 60 applications, 1 s each

5 * * 60 applications, 5 s each

6 600 0.5 30 s each

7 600 2.2 2 s each

8 600 3 1 s each

9 1000 5 0.5 s each

Second Level AC Power Fault Test for Non-Customer Premises Equipment

Test

Applied Voltage, 60 Hz

V

RMS

Short Circuit Current

Amps

Duration

1 120, 277 30 30 min

2 600 60 5 s

36007 5 s

4 100-600 2.2 at 600 V 30 min

TeleLink Fuse

®

Data Book and Design Guide

Time Current Curve

Time in seconds

Current in Amperes

.01

.02

.03

.04

.05

.06

.07

.08

.09

.1

.2

.3

.4

.5

.6

.7

.8

.9

1

2

3

4

5

6

7

8

9

10

20

30

40

50

60

70

80

90

100

200

300

400

500

600

700

800

1000

F0500T

F1250T

F1251T

.1

.2

.3

.4

.5

.

6

.7.8.9

1

2

3

4

5

6

7

8

9

10

2

0

3

0

40

5

0

6

0

70

80

90

100

TeleLink Fuse

®

Data Book and Design Guide +1 972-580-7777

Data Sheets

Temperature Derating Curve

Operating temperature is -55 °C to +125 °C with proper correction factor applied.

Chart of Correction Factor

* Higher currents and PCB layout designs can affect this parameter.

Notes:

• Readings are measured at rated current after temperature stabilizes

• The F1250T meets the requirements of UL 248-14. However, board layout, board trace widths, and ambient temperature values can cause higher than expected rises in temperature. During UL testing, the typical recorded heat rise for the F1250T at 2.2 A was 120 °C.

Maximum Temperature Rise

TeleLink Fuse Temperature Reading

F0500T £75 °C (167 °F) *

F1250T £75 °C (167 °F) *

F1251T £75 °C (167 °F) *

30

-55 -60 -40 -20 0 20 40 60 80 100 125

40

50

60

70

80

90

100

110

Ambient ˚C

Percent of Rating

Effect on Current Rating

120

130

140

150

Package Symbolization

Marking F0500T F1250T F1251T

Manufactured in

USA

Manufactured in

Tai wan

FU F U

FT F T

JU J U

JT J T

NU N U

NT N T

NOTES

®

Data Book and Design Guide +1 972-580-7777

Reference Designs

3 Reference Designs

This section offers specific examples of how SIDACtor devices can be used to ensure longterm operability of protected equipment and uninterrupted service during transient electrical activity. For additional line interface protection circuits, see "Regulatory Compliant Solutions" on page 4-34.

Customer Premises Equipment (CPE). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-3

High Speed Transmission Equipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-7

ADSL Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-7

HDSL Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-8

ISDN Circuit Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-10

Pair Gain Circuit Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3-11

T1/E1 Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-14

Additional T1 Design Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-16

T3 Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-16

Analog Line Cards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-17

PBX Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-25

CATV Equipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-26

Primary Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-29

Secondary Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-31

Triac Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-33

Data Line Protectors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-34

LAN / WAN Protectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-35

10Base-T Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-35

100Base-T Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-36

Note: The circuits referenced in this section represent typical interfaces used in

telecommunications equipment. SIDACtor devices are not the sole components required to pass applicable regulatory requirements such as UL 60950, GR 1089, or TIA-968 (formerly known as FCC Part 68), nor are these requirements specifically directed at SIDACtor devices.

Customer Premises Equipment (CPE)

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Reference Designs

Customer Premises Equipment (CPE)

CPE is defined as any telephone terminal equipment which resides at the customer’s site and is connected to the Public Switched Telephone Network (PSTN). Telephones, modems, caller ID adjunct boxes, PBXs, and answering machines are all considered CPE.

Protection Requirements

CPE should be protected against overvoltages that can exceed 800 V and against surge currents up to 100 A. In Figure 3.1 through Figure 3.6, SIDACtor devices were chosen because their associated peak pulse current (IPP) rating is sufficient to withstand the lightning immunity test of TIA-968 (formerly known as FCC Part 68) without the additional use of series line impedance. Likewise, the fuse shown in Figure 3.1 through Figure 3.6 was chosen because the amps

2

time (I2t) rating is sufficient to withstand the lightning immunity tests of TIA-968 without opening, but low enough to pass UL power cross conditions.

The following regulatory requirements apply:

• TIA-968 (formerly known as FCC Part 68)

• UL 60950

All CPE intended for connection to the PSTN must be registered in compliance with TIA-968. Also, because the National Electric Code mandates that equipment intended for connection to the telephone network be listed for that purpose, consideration should be given to certifying equipment with an approved safety lab such as Underwriters Laboratories.

CPE Reference Circuits

Figure 3.1 through Figure 3.6 show examples of interface circuits which meet all applicable regulatory requirements for CPE. The P3100SB and P3100EB are used in these circuits because the peak off-state voltage (V

DRM

) is greater than the potential of a Type B ringer

superimposed on a POTS (plain old telephone service) battery.

150 V

RMS

Ö2 + 56.6 VPK = 268.8 V

PK

Note that the circuits shown in Figure 3.1 through Figure 3.6 provide an operational solution for TIA-968 (formerly known as FCC Part 68). However TIA-968 allows CPE designs to pass non-operationally as well.

For a non-operational solution, coordinate the I

PP

rating of the SIDACtor device and the I2t rating of the fuse so that (1) both will withstand the Type B surge, and (2) during the Type A surge, the fuse will open. (See Table 5.1, Surge Rating Correlation to Fuse Rating on page 5-8.)

Note: For alternative line interface protection circuits, see "Regulatory Compliant Solutions"

on page 4-34.

Customer Premises Equipment (CPE)

®

Data Book and Design Guide

Figure 3.1 Basic CPE Interface

Figure 3.2 Transformer Coupled Tip and Ring Interface

Figure 3.3 Modem Interface

P3100SB

or

P3100EB

To Protected Components

Tip

F1250T

Ring

P3100SB

or

P3100EB

Ring

Detect

Ring

+

-

Transmit / Receive

Tip

F1250T

Ring

Detect

P3100SB

or

P3100EB

Relay

Transmit/ Receive Circuitry

Tip

Ring

F1250T

Customer Premises Equipment (CPE)

®

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Reference Designs

Figure 3.4 CPE Transistor Network Interface — Option 1

Figure 3.5 CPE Transistor Network Interface — Option 2

Transistor Network Interface

Option 1

P3100SB

or

P3100EB

Ringer

Hook Switch

Dialer

IC

Speech

Network

DTMF

Handset

Tip

Ring

F1250T

Transistor Network Interface

Ringer

Hook Switch

Option 2

P1800SB

or

P1800EB

Dialer

IC

Speech

Network

DTMF

Handset

Tip

Ring

F1250T

Customer Premises Equipment (CPE)

®

Data Book and Design Guide

Figure 3.6 Two-line CPE Interface

P3100SB

or

P3100EB

Transistor Network Interface

P3100SB

or

P3100EB

Transistor Network Interface

Ring

Detect

Tip

Ring

Tip

Ring

F1250T

Ring

Detect

Note: Different Ground References Shown.

High Speed Transmission Equipment

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Reference Designs

High Speed Transmission Equipment

High speed transmission equipment encompasses a broad range of transmission protocols such as T1/E1, xDSL, and ISDN. Transmission equipment is located at the central office, customer premises, and remote locations.

Protection Requirements

Transmission equipment should be protected against overvoltages that can exceed 2500 V and surge currents up to 500 A. In Figure 3.7 through Figure 3.17, SIDACtor devices were chosen because their associated peak pulse current (IPP) rating is sufficient to withstand the lightning immunity tests of GR 1089 without the additional use of series line impedance. Likewise, the fuse shown in Figure 3.7 through Figure 3.17 was chosen because the amps

2

time (I2t) rating is sufficient to withstand the lightning immunity tests of GR 1089, but low enough to pass GR 1089 current limiting protector test and power cross conditions (both first and second levels).

The following regulatory requirements apply:

• TIA-968 (formerly known as FCC Part 68)

• GR 1089-CORE

• ITU-T K.20/K.21

• UL 60950

Most transmission equipment sold in the US must adhere to GR 1089. For Europe and other regions, ITU-T K.20/K.21 is typically the recognized standard.

ADSL Circuit Protection

Asymmetric Digital Subscriber Lines (ADSLs) employ transmission rates up to 6.144 Mbps from the Central Office Terminal (COT) to the Remote Terminal (RT) and up to 640 kbps from the RT to the COT at distances up to 12,000 feet. (Figure 3.7)

Figure 3.7 ADSL Overview

Digital Network

Local Loop Remote SiteCentral Office Site

ADSL transceiver unit

ATU-C

ATU-R

ADSL transceiver unit

PSTN

voice

data

POTS

video

Splitter

up to 12 kft

High Speed Transmission Equipment

®

Data Book and Design Guide

Protection Circuitry

Longitudinal protection was not used at either the ADSL Transceiver Unit – Central Office (ATU-C) interface or the ADSL Transceiver Unit – Remote (ATU-R) interface due to the absence of earth ground connections. (Figure 3.8) In both instances, the P3500SC MC SIDACtor device and the F1250T TeleLink fuse provide metallic protection. For ATUs not isolated from earth ground, reference the HDSL protection topology.

Figure 3.8 ADSL Protection

Component Selection

The P3500SC MC SIDACtor device and F1250T TeleLink fuse were chosen to protect the ATUs because both components meet GR 1089 surge immunity requirements without the use of additional series resistance. Although the P3100 series SIDACtor device may be used to meet current ANSI specifications, Teccor recommends the P3500 series to avoid interference with the 20 V

P-P

x DSL signal on a 150 V rms ringing signal superimposed on a

56.5 V battery.

HDSL Circuit Protection

HDSL (High-bit Digital Subscriber Line) is a digital line technology that uses a 1.544 Mbps (T1 equivalent) transmission rate for distances up to 12,000 feet, eliminating the need for repeaters. The signaling levels are a maximum of ±2.5 V while loop powering is typically under 190 V. (Figure 3.9)

TIP

RING

ADSL chip set

P3500SC MC

F1250T

High Speed Transmission Equipment

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Reference Designs

Figure 3.9 HDSL Overview

Protection Circuitry

Longitudinal protection is required at both the HDSL Transceiver Unit – Central Office (HTU-C) and HDSL Transceiver Unit – Remote (HTU-R) interfaces because of the ground connection used with loop powering. Two P2300SC MC SIDACtor devices provide overvoltage protection and two F1250T TeleLink fuses (one on Tip, one on Ring) provide overcurrent protection. (Figure 3.10) For the transceiver side of the coupling transformer, additional overvoltage protection is provided by the P0080SA SIDACtor device. The longitudinal protection on the primary coil of the transformer is an additional design consideration for prevention of EMI coupling and ground loop issues.

Figure 3.10 HDSL Protection

DS-1 Rate Interface (1.544 Mbps)

Central Office Site Remote Site

784 kbps Full-Duplex loop

784 kbps Full-Duplex loop < 12,000 ft, 200 kHz BW +2.5 V signal level 2B1Q, Z

O

=135 W

HTU-C HTU-R

HDSL transceiver unit

P2300SC MC

F1250T

Tip

Ring

P0080SA MC

P2300SC MC

F1250T

Tip

Ring

P0080SA MC

TX

RX

HDSL

Transceiver

Power

Sink

HTU-C/HTU-R Interface Protection

High Speed Transmission Equipment

®

Data Book and Design Guide

Component Selection

The P2300SC MC SIDACtor device and the F1250T TeleLink fuse were chosen because both components meet GR 1089 surge immunity requirements without the use of additional series resistance. The P2300SC MC voltage rating was selected to ensure loop powering up to 190 V. For loop powering greater than 190 V, consider the P2600SC MC. The P0080SA MC SIDACtor device was chosen to eliminate any sneak voltages that may appear below the voltage rating of the P2300SC MC.

ISDN Circuit Protection

Integrated Services Digital Network (ISDN) circuits require protection at the Network Termination Layer 1 (NT1) U-interface and at the Terminating Equipment (TE) or Terminating Adapter (TA) S/T interface. Signal levels at the U-interface are typically ±2.5 V; however, with sealing currents and maintenance loop test (MLT) procedures, voltages approaching 150 V rms can occur. (Figure 3.11)

Figure 3.11 ISDN Overview

Protection Circuitry

Longitudinal protection was not used at either the U- or the TA/TE-interface due to the absence of an earth-to-ground connection. (Figure 3.12) At the U-interface, the P2600SC MC SIDACtor device and F1250T TeleLink fuse provide metallic protection, while the TA/TE-interface uses the P0640SC MC SIDACtor device and F1250T Tele Li n k fuse. Figure 3.12 also shows interfaces not isolated from earth ground.

ISDN Compliant Central Office Switching System

Network Termination Layer 1

NT1

CO

ISDN DSL 2-Wire, 160 kbps 2B1Q ±2.5 V

U Reference

TA

TE

NT2 PBX

TE

TA

S

S Reference, 4-Wire

T Reference 4-Wire

T

Terminal Adapter

Terminal Equipment (ISDN Compliant)

POTS

Non-ISDN Terminal

B1

B2

D

ISDN Terminal

B1

B2

D

High Speed Transmission Equipment

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Reference Designs

Figure 3.12 ISDN Protection

Component Selection

The “SC MC” SIDACtor devices and F1250T TeleLink fuse were chosen because these components meet GR 1089 surge immunity requirements without the use of additional series resistance. An MC is chosen to reduce degradation of data rates. The P2600SC MC voltage rating was selected to ensure coordination with MLT voltages that can approach 150 V rms. The voltage rating of the P0640SC MC was selected to ensure coordination with varying signal voltages.

Pair Gain Circuit Protection

A digital pair gain system differs from an ISDN circuit in that ring detection, ring trip, ring forward, and off-hook detection are carried within the 64 kbps bit stream for each channel rather than using a separate D channel. The pair gain system also uses loop powering from 10 V up to 145 V with a typical maximum current of 75 mA. (Figure 3.13)

Figure 3.13 Pair Gain Overview

Tip

Ring

P2600SC MC

Powe r Source

ISDN Transceiver

F1250T

TX

P0640SC MC

RX

F1250T

Powe r Sink

P0640SC MC

RX

TX

ISDN Transceiver

ISDN U-Interface

ISDN S/T Interface

Switching System

Line powered

DSL 2-Wire,

160 kbps

2B1Q

POTS

Line 1

Line 2

MDF Central Office

Terminal (COT)

VF 1

VF 2

HF

VF 1

VF 2

HF

Remote

Te r mi n a l

Remote Terminal (RT)

building or pedestal

mounted

POTS

Customer Premises

(CP)

Central Office (CO)

High Speed Transmission Equipment

®

Data Book and Design Guide

Protection Circuitry

Longitudinal protection is required at the Central Office Terminal (COT) interface because of the ground connection used with loop powering. (Figure 3.14) Two P1800SC MC SIDACtor devices provide overvoltage protection and two F1250T TeleLink fuses (one on Tip, one on Ring) provide overcurrent protection. For the U-interface side of the coupling transformer, the illustration shows the P0080SA MC SIDACtor device used for additional overvoltage protection.

Figure 3.14 Pair Gain COT Protection

For Customer Premises (CP) and Remote Terminal (RT) interfaces where an earth ground connection is not used, only metallic protection is required. Figure 3.15 shows metallic protection satisfied using a single P3100SC MC across Tip and Ring and a single F1250T on either Tip or Ring to satisfy metallic protection.

Tip1

Ring1

P0080SA

Tip2

Ring2

Power Source

U-Interface

Tip

Ring

P1800SC MC

F1250T

Central Office Terminal (COT) Interface

Datasheet F1251T, F1250T, F0500T, B6002AD, B3204UC Datasheet (TECOR)

Specifications and Main Features

Frequently Asked Questions

User Manual