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40
General Description
η
28.0
V, Vgs = 0V,
V, Vgs = 0V,
V, Vgs = 0V,
F1008
polyfet rf devices
8/1/97
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOSTRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
40Watts Gemini
Laser Driver and others.
"Polyfet" process features
TM
Package Style AK
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
t
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
performance
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation Resistance Temperature Voltage Voltage Voltage
170Watts 1.05
Junction to
Case Thermal
o
C/W
Maximum
Junction
o
C
200 -65 to 150
Storage
Temperature
o
C
DC Drain
Current
o
C
8 A
o
Drain to
Gate
Drain to
Source
VV70 70
Gate to
Source
RF CHARACTERISTICS ( WATTS OUTPUT )
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Gps
Common Source Power Gai
13
dB
Idq =
0.8
A,
28.0Vds = V,
F = 400MHz
30V
VSWR
Drain Efficiency
Load Mismatch Toleranc
60
20:1
%
Relative
Idq =
Idq =
0.8
0.8
A,
A,
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
65
2
1
71
1.6
0.7
11
66
8
40
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
POLYFET RF DEVICES
0.1Ids = A,
Vds = V, Vgs = 0V
Vds = 0 V, Vgs = 30V
0.2Ids = A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 8
Vgs = 20V, Vds = 10V
28.0Vds =
28.0Vds =
28.0Vds =
REVISION
28.0Vds = V,
28.0Vds = V,
Vgs = 0V
A
F = 400MHz
F = 400MHz
F = 1 MHz
F = 1 MHz
F = 1 MHz
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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F1008
8/1/97
POUT VS PIN GRAPH
F1008 POUT vs PIN Idq=0.8A F=400 Mhz Vds=28v
70
60
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
GAIN
POUT
Efficiency = 50%
PIN IN WATTS
POUT GAIN
IV CURVE ID AND GM VS VGS
F1B 2 DICE IV CURVE
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V
Vds in Volts
CAPACITANCE VS VOLTAGE
F1B 2 DICE CAPACITANCE
17
16
15
14
13
12
11
10
1000
100
10
1
0 5 10 15 20 25 30
100
10
1
0.1
0 2 4 6 8 10 12 14
Coss
Crss
Ciss
VDS IN VOLTS
F1B 2 DIE GM & ID vs VGS
Gm
Vgs in Volts
Id
S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
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