Datasheet EVM692AHJ, E692AHJ Datasheet (Semtech Corporation)

EDGE HIGH-PERFORMANCE PRODUCTS

Edge692

200 MHz Monolithic

Dual Pin Electronics Driver

Description

The Edge692 is a dual pin electronics driver
manufactured in a high-performance, complementary
bipolar process. In Automatic Test Equipment (ATE)
applications, the Edge692 offers two pin drivers suitable
for drive-only channels in memory testers, as well as for
bidirectional channels in memory, VLSI, and mixed- signal
test systems.

The Edge692 is designed to produce excellent waveforms
(low overshoot), especially at low swings (<500 mV), and
have extremely low leakage currents in HiZ mode. In
addition, the Edge692 is pin and functionally compatible
with both the Edge693 and the Bt692.

Each driver is capable of forcing 9V signals over a 12V
range, in addition to going into a high impedance state.
The driver slew rate is adjustable between 2 V/ns and 1
V/ns.

Each driver is completely isolated from the other . There
are separate data, enable, slew rate adjust, high and
low levels, as w ell as power supply inputs for each driver .

Applications

• Memory Test Equipment

• Instrumentation

Functional Block Diagram

SLEWADJA

Combining two independent drivers into a 28 pin PLCC
package offers a highly integrated solution where speed
and density are at a premium.

Features

• 2 V/ns Driver Slew Rates

• Adjustable Driver Slew Rates

• Three Statable

• Low HiZ Leakage

• Low Voltage Driver Swings

• Low Overshoot Waveforms

• 12 V Output Range

• 9 V Output Swings

• 28-Pin PLCC with an Internal
Heat Spreader

• Edge693 Compatible

• Bt692 Compatible

DRVENA

DRVENA*

DHIA

DHIA*

DVHA

DVLA

BIAS

DRVENB

DRVENB*

DHIB

DHIB*

DVHB

DVLB

EN

EN

SLEWADJB

DRIVER A

DOUTA

DRIVER B

DOUTB

Revision 1 / March 31, 1998

1

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EDGE HIGH-PERFORMANCE PRODUCTS

PIN Description

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revirD

*ANEVRD,ANEVRD
*BNEVRD,BNEVRD

*AIHD,AIHD
*BIHD,BIHD

ATUOD
BTUOD

AHVD,ALVD
BHVD,BLVD

APACHVD,APACLVD
BPACHVD,BPACLVD

AJDAWELS
BJDAWELS

SAIB1 roflevelsaiblanretniehtstesedonsihtotnitnerrucevitisopA.tupnigolanA

rewoP

BEEV,AEEV31,71.BrevirddnaArevirdrofylppusrewopevitageN

BCCV,ACCV11,91.BrevirddnaArevirdrofylppusrewopevitisoP

42,52

6,5

82,72

2,3

81
21

32,22

7,8

12,61

9,41

02
01

.Brevirddna

.Brevird

.BrevirddnaArevird

.stuptuoBrevirddnaArevirD

.tuptuo)ylevitcepserBdnaA(revirdehtta)LVDroHVD(

.etatsecnadepmihgihanidecalproegatlovagnicrofsi)ylevitcepser

BdnaA(revirdehtrehtehwenimretedtahtsniptupnilaitnereffidegatlovediW

slevelelbammargorpowtfoenoecroftahtsniptupnilaitnereffidegatlovediW

ArevirdrofsleveltuptuohgihdnawolehtmargorptahtstupnigolanadeereffuB

.niphcaeotdetcennocebdluohsdnuorgotroticapacFµ10.0.snipgolanA

dnaArevirdfosetarwelsllafdnaesirehttsujdatahtstupnitnerrucgolanA

sniPtseT

 2000 Semtech Corp.

BDNG,ADNG4,62.BrevirddnaArevirdrofdnuorgeciveD

EDOIDLAMREHT51 .erutarepmetnoitcnujeidehtkcartotdesutuptuorotinomlamrehT

2

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EDGE HIGH-PERFORMANCE PRODUCTS

PIN Description (continued)

DRVENA

DRVENA*

25

24

28-Pin PLCC

DVHA

DVLA

DVHCAPA

23

22

21

SLEWADJA

20

VCCA

19

GNDA

DHIA

DHIA*

BIAS

DHIB*

DHIB

GNDB

26

27

28

1

2

3

4

5

DRVENB

6

DRVENB*

7

DVHB

8

DVLB

9

10

DVHCAPB

SLEWADJB

18

17

16

15

14

13

12

11

VCCB

DOUTA

VEEA

DVLCAPA

THERMAL DIODE

DVLCAPB

VEEB

DOUTB

 2000 Semtech Corp.

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EDGE HIGH-PERFORMANCE PRODUCTS

Circuit Description

Introduction

The driver circuit will force the DOUT output to one of
three states:

1. DVH (driver high voltage level)

2. DVL (driver low voltage level)

3. High Impedance (Hi Z).

Both driver digital control inputs (DHI/DHI*, DRVEN/
DRVEN*) are wide-voltage differential inputs capable of
receiving ECL, TTL, and CMOS signals. Single-ended
operation is achievable by generating the proper
threshold levels for the inverting inputs.

Drive Enable

The drive enable (DRVEN/DRVEN*) inputs control
whether the driver is forcing a voltage or is placed in a
high-impedance state. If DRVEN is more positive than
DRVEN*, the output will force either DVL or DVH,
depending on the driver data inputs. When DRVEN is
more negative than DRVEN*, the output is set to high­impedance, independent of the driver data inputs.

Driver Data

The driver data inputs (DHI/DHI*) determine whether
the driver output is high or low. If DHI is more positive
than DHI*, the output will force DVH when the driver is
enabled. If DHI is more negative than DHI*, the output
will force DVL when the driver is enabled.

T able 1 summarizes the functionality of the driver enable
and driver data pins.

Driver Levels

DVH and DVL are high input impedance voltage controlled
inputs that establish the driver logical high and low levels
respectively.

DVLCAP / DVHCAP

These two analog nodes are brought out to better
stabilize the high and low driver levels. Much like placing
decoupling capacitors on the DVL and DVH input pins,
the DVLCAP and DVHCAP pins require a fixed .01 µF
chip capacitor (with good high frequency characteristics)
to ground. A tight layout with minimum etch is
recommended.

Driver Bias

The BIAS pin is an analog current input that establishes
a reference current for the driver and influences the
overall speed and power consumption of the chip. The
BIAS input current may be varied from 1.0 mA to 2.0
mA. Ideally , a current source would supply this current.
However, a resistor to a voltage source, typically VCC, is
acceptable.

The BIAS input structure is shown in Figure 1.

VCC

REXT

BIAS

*NEVRD,NEVRD*IHD,IHDTUOD

*NEVRD>NEVRD*IHD>IHDHVD

*NEVRD>NEVRD*IHD<IHDLVD

*NEVRD<NEVRDXZiH

Table 1. DRVEN and DHI Pin Functionality

 2000 Semtech Corp.

50

VEE

Figure 1. BIAS Input Structure

4

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EDGE HIGH-PERFORMANCE PRODUCTS

Circuit Description (continued)

The desired value for the external resistor can be
determined from the relationship:

IBIAS = (VCC - .7) / (Rext + 50).

The actual IBIAS level is determined by selecting the
desired performance and power level. The charts listed
in the Application Information section enable the user
to quickly determine the appropriate bias level.

Thermal Monitor

The Edge692 includes an on-chip thermal monitor
accessible through the THERMAL DIODE pin. This node
connects to 5 diodes in series to VEE (see Figure 2) and
may be used to accurately measure the junction
temperature at any time.

Thermal Diode

Bias Current

Slew Rate Adjustment

The driver rising and falling slew rates are adjustable
from 2 V/ns to 1 V/ns. The actual slew rate realized is a
function of the chip bias and slew rate adjust input
currents.

The SLEWADJ input is determined by selecting the
desired performance and power level (after the BIAS
current is first chosen.) The charts listed in the
Application Information section enable the user to quickly
determine the appropriate SLEWADJ level.

SLEWADJ is a current controlled input that varies the
rising and falling edge slew rates. Ideally, a current DA C
would be used to establish this current. However, a
resistor to a positive voltage, typically VCC, is acceptable.

Figure 3 shows a simplified schematic of the SLEWADJ
input stage. Once a desired input current is selected,
the external resistor value is determined by the following
relationship:

Temperature coefficient = –10 mV/

VEE

C

˚

Figure 2. Thermal Diode String

A bias current of 100 µA is injected into this node, and
the measured voltage corresponds to a specific junction
temperature with the following equation:

TJ(˚C) = {[(VTHERMAL DIODE – VEE) / 5] – .7} / (–.00208).

(VCC - .7) / (Rext + 860) = Islewadj.

VCC

REXT

SLEWADJ

1.72K 1.72K

Iradj Ifadj

Figure 3. SLEWADJ input circuitry

Notice that the driver A slew rate and driver B slew rate
are independent. However, the rising and falling edge
slew rates on each driver track each other and are not
independent.

 2000 Semtech Corp.

5

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EDGE HIGH-PERFORMANCE PRODUCTS

Application Information

Family of Curves for Rise and Fall Times for 800 mV Swings.

Rise Times for 800 mV Swings

0.75

0.7

0.65

0.6

0.55

0.5

0.45

Rise Time (ns)

0.4
1 1.4 1.8 2.2

Slewadj (mA)

Fall Times for 800 mV Swings

0.85

0.8

Ibias = 1.0 mA

Ibias = 1.25 mA

Ibias = 1.5 mA

Ibias = 1.75 mA

Ibias = 2.0 mA

Ibias = 1.0 mA

Fall Time (ns)

 2000 Semtech Corp.

0.75

0.7

0.65

0.6

0.55

0.5

0.45
1 1.4 1.8 2.2

Slewadj (mA)

Ibias = 1.25 mA

Ibias = 1.5 mA

Ibias = 1.75 mA

Ibias = 2.0 mA

6

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EDGE HIGH-PERFORMANCE PRODUCTS

Application Information (continued)

Family of Curves for Rise and Fall Times for 3V Swings.

Rise Times for 3V Swings

3.5

3

2.5

2

1.5

Rise Time (ns)

1

1 1.4 1.8 2.2

Slewadj (mA)

Fall Times for 3V Swings

3.5

3

Ibias = 1.0 mA

Ibias = 1.25 mA

Ibias = 1.5 mA

Ibias = 1.75 mA

Ibias = 2.0 mA

Ibias = 1.0 mA

2.5

1.5

Fall Time (ns)

 2000 Semtech Corp.

2

1

1 1.4 1.8 2.2

Slewadj (mA)

Ibias = 1.25 mA

Ibias = 1.5 mA

Ibias = 1.75 mA

Ibias = 2.0 mA

7

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EDGE HIGH-PERFORMANCE PRODUCTS

Application Information (continued)

Family of Curves for Rise and Fall Times for 5V Swings.

Rise Times for 5V Swings

5.5
5

4.5
4

3.5
3

Rise Time (ns)

2.5
2

1 1.4 1.8 2.2

Slewadj (mA)

Ibias = 1.0 mA

Ibias = 1.25
mA

Ibias = 1.5 mA

Ibias = 1.75
mA

Ibias = 2.0 mA

Fall Times for 5V Swings

5.5
5

Ibias = 1.0 mA

Fall Time (ns)

 2000 Semtech Corp.

4.5
4

3.5
3

2.5
2

1 1.4 1.8 2.2

Slewadj (mA)

Ibias = 1.25 mA

Ibias = 1.5 mA

Ibias = 1.75 mA

Ibias = 2.0 mA

8

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EDGE HIGH-PERFORMANCE PRODUCTS

Application Information (continued)

Supply Current Family of Curves

Negative Supply Current

160.00

140.00

120.00

100.00

Iee (mA)

80.00

60.00

160.00

140.00

1 1.4 1.8 2.2

Slewadj (mA)

Positive Supply Current

Ibias = 1.0 mA

Ibias = 1.25 mA

Ibias = 1.5 mA

Ibias = 1.75 mA

Ibias = 2.0 mA

Ibias = 1.0 mA

Icc (mA)

 2000 Semtech Corp.

120.00

100.00

80.00

60.00
1 1.4 1.8 2.2

Slewadj (mA)

9

Ibias = 1.25 mA

Ibias = 1.5 mA

Ibias = 1.75 mA

Ibias = 2.0 mA

www.semtech.com

EDGE HIGH-PERFORMANCE PRODUCTS

Application Information (continued)

Power Dissipation Family of Curves

Quiescent Power Consumption

3.00

Conditions:

VCC = +11.5V

VEE = –7.5V

Ta = 40˚C

θJA = 26˚C

2.50

2.00

1.50

Pd (Watts)

1.00

120.00

110.00

100.00

Tj (°C)

1 1.4 1.8 2.2

Slewadj (mA)

Junction Temperature

90.00

80.00

70.00

60.00
1 1.4 1.8 2.2

Ibias = 1.0 mA

Ibias = 1.25 mA

Ibias = 1.5 mA

Ibias = 1.75 mA

Ibias = 2.0 mA

Ibias = 1.0 mA

Ibias = 1.25 mA

Ibias = 1.5 mA

Ibias = 1.75 mA

Ibias = 2.0 mA

 2000 Semtech Corp.

Slewadj (mA)

10

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EDGE HIGH-PERFORMANCE PRODUCTS

Application Information (continued)

Thermal Information

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ecnatsiseRlamrehT

esaCotnoitcnuJ

riAotnoitcnuJ

riAllitS

MPFL05

MPFL004

θ CJ

θ AJ
θ AJ
θ AJ

31

94
63
62

o

W/C

o

W/C

o

W/C

o

W/C

 2000 Semtech Corp.

11

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EDGE HIGH-PERFORMANCE PRODUCTS



Package Information

PIN Descriptions

0.045 x 45

[1.143]

0.485 – 0.495



[12.32 – 12.57]

SQ

0.450 – 0.456

[11.43 – 11.58]

Pin #1

o



SQ

Pin #1 Ident

28 Pin PLCC Package
θJA = 75 to 80˚C / W

Pin #1

0.300 REF
[7.62]

0.050 
[1.27]
TYP

0.165 – 0.180

.045 x 45

o

[4.19 – 4.57]

[1.14]

0.026 – 0.032

[0.661 – 0.812]

0.390 – 0430

[9.91 – 10.92]

0.026 – 0.032

[0.661 – 0.812]

0.090 – 0.120
[2.29 – 3.04]

Notes: (unless otherwise specified)

1. Dimensions are in inches [millimeters].

2. Tolerances are: .XXX ± 0.005 [0.127].

3. PLCC packages are intended for surface mounting on solder lands on 0.050 [1.27] centers.

 2000 Semtech Corp.

12

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EDGE HIGH-PERFORMANCE PRODUCTS

Recommended Operating Conditions

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ylppuSrewoPevitisoPCCV5.85.115.31V

ylppuSrewoPevitageNEEV5.8-5.7-2.4-V

ylppuSgolanAlatoTEEV-CCV7.210.91V

stupnIgolanA

leveLhgiHrevirD

leveLwoLrevirD

saiBrevirD

tsujdAetaRwelSArevirD
tsujdAetaRwelSBrevirD

erutarepmeTgnitarepOtneibmAAT52+07+

HVD

LVD
SAIB

AJDAWELS

BJDAWELS

5.3+EEV

9.2+EEV

0.1

0.1

0.1

5.1

57.1

57.1

9.2-CCV

5.3-CCV

0.2

2.2

2.2

V
V

Am
Am
Am

o

C

erutarepmeTnoitcnuJJT52+521+

Absolute Maximum Ratings

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)DNGotevitaleR(CCVCCV0 0.41+V

DNGotevitaleR(EEVEEV0.01-0V

ylppuSrewoPlatoTEEV-CCV0.02+V

segatloVtupnIlatigiD*NEVRD,NEVRD

segatloVtupnIlaitnereffiD*NEVRD-NEVRD

segatloVgolanAHVD,LVD,TUODEEVCCVV

stnerruCtupnIgolanA

saiBrevirD

tsujdAetaRwelS

erutarepmeTgnitarepOtneibmAAT55-521+

erutarepmeTegarotSST56-051+

erutarepmeTnoitcnuJJT051+

erutarepmeTgniredloS

)nipmorf"4/1,sdnoces5(

EEV0.6+V

*IHD,IHD

0.5-0.5+V

*IHD-IHD

SAIB

AJDAWELS
BJDAWELS

LOST062

0
0
0

o

C

6.2

8.2

8.2

Am
Am
Am

o

C

o

C

o

C

o

C

Thermal equilibrium is established by applying power for at least 2 minutes while maintaining a transverse
air flow of 400 linear feet per minute over the device mounted either in the test socket or on the printed
circuit board. Thermal resistance measurements are taken with device soldered to PCB.

 2000 Semtech Corp.

13

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EDGE HIGH-PERFORMANCE PRODUCTS

DC Characteristics

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LVD,HVD

tupnIsaiB

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tiucriCrevirD

egnaRegatloVtuptuO

gniwSegatloVtuptuO

:tnerruCtuptuOcitatSxaM
V2->TUOD
V2-<TUOD

tnerruCtuptuOcimanyDxaM

)1etoN(tnerruCegakaeLTUOD

ycaruccACD

hgiHrevirD

)2etoN(tesffO

)3etoN(niaG

)4etoN(ytiraeniL

∆ /HVD ∆ TUOD

NII

SAIB

KAELI

002-

0.15.1

TUODV
gniwsV

TUODI
TUODI

TUOD-HVD

TUOD-LVD

5.3+EEV

0

53­02-

001-

1-520.<

051-

59.
02-

99.
01<

002+

0.2

5.3-CCV

0.9
53+

02+

001+

1

053

0.1

02

Aµ

Am

V
V

Am
Am
Am

Aµ

Vm

V/V

Vm

woLrevirD

)2etoN(tesffO

)3etoN(niaG

)4etoN(ytiraeniL

erutarepmeTegatloVtesffO

tneiciffeoC

ecnadepmItuptuOrevirDTUOZ0.10.35.4

RRSPrevirDRRSP03Bd

stupnIlatigiD

*IHD,IHD,*NEVRD,NEVRD

tnerruCtupnI

egnaRegatloVtupnI

gniwStupnIlaitnereffiD

tnerruCylppuSrewoP

ylppuSevitisoP

ylppuSevitageN

∆ /HVD ∆ TUOD

TUOD-HVD

TUOD-LVD

CTTUOD1±/Vm

NII

GNRV

FFIDV

CCI
EEI051-

051-

59.
02-

009-

0.2-

52.0

99.
01<

021
021

053

0.1

02

009+

5.5+

0.4+

051Am

Vm

V/V

Vm

o

C

Ω

Aµ
V
V

Am

Note 1: Device output leakage is specified with DOUT over the entire output voltage range.
Note 2: The offset voltage is defined as the difference between the measured driver output at DOUT under no

load conditions versus the programmed voltage (DVH or DVL) when forced to –1.0 V.

Note 3: The driver gain is defined as the change in driver output voltage (DOUT) divided by the change in

programmed input voltage (DVH or DVL). Measurements are tak en at –1.0 V and +4.0 V programmed
inputs with the output under no-load conditions.

Note 4: Linearity error is defined as the maximum deviation between the theoretical driver output voltage

(predicted by the straight line determined by the offset and gain) and the actual measured output
voltage under no load conditions.

 2000 Semtech Corp.

14

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EDGE HIGH-PERFORMANCE PRODUCTS

AC Characteristics

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)1etoN(TUODotIHDmorfdpTdpT7.1sn

)2etoN(ZiHTUODotNEVRDmorfdpT 7.1sn

)2etoN(evitcATUODotNEVRDmorfdpT 7.1sn

)3etoN(semiTllaF/esiRTUOD

%08-%02,Vm008
%09-%01,V3
%09-%01,V5

fT/rT
fT/rT
fT/rT

5.

52.1

52.2

6.0

6.1

57.2

57.

0.3

0.5

sn
sn
sn

etaRelggoT

Vm008
V3
V5

ZiHniecnaticapaCtuptuOtuoC0.2

)4etoN(htdiWesluPmuminiM

Vm008
V3
V5

xamF

002
051
001

5.2

0.3

0.5

zHM
zHM
zHM

Fp

sn
sn
sn

The specified limits shown can be met only after thermal equilibrium has been established. Thermal
equilibrium is established by applying power for at least two minutes while maintaining the normal operating
environment.

Note 1: Tpd is measured from crossover point of DHI and DHI* to the 50% point in the output. DVL

equals 0 V and DVH equals +3 V.

Note 2: Specification condition: DVL equals -1 V and DVH equals +1 V. Output is terminated to GND by

100 Ω. Tpd is measured from the crossover point of DRVEN and DRVEN* to the point where a
10-percent change in output voltage occurs.

Note 3: The driver load is an 18" 50Ω. transmission line terminated with 1KΩ. in parallel with 2 pF.
Note 4: The output pulse width is measured at the 50-percent points. Output reaches 100% of programmed

value.

 2000 Semtech Corp.

15

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EDGE HIGH-PERFORMANCE PRODUCTS

Ordering Information

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JHA296ECCLPniP-82

JHA296MVEeludoMnoitaulavE296egdE

erutarepmeTtneibmA

egnaR

o

)redaerpStaeHlanretnIhtiw(

52+

o

07+otC

C

Contact Information

 2000 Semtech Corp.

Semtech Corporation

Edge High-Performance Division
10021 Willow Creek Rd., San Diego, CA 92131
Phone: [phone] FAX [phone]

16

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