Datasheet ESM765PI-800 Datasheet (SGS Thomson Microelectronics)

®

MAIN PRODUCTS CHARACTE RISTICS

ESM765PI-800

RECOVERY RECTIFIER DIODES

I

F(AV)

V

RRM

10 A

800 V

Tj (max) 150°C

V

(max) 1.35 V

F

trr (max) 300 ns

FEATURES

HIGH VOLTAGE CAPABILITY
FAST AND SOFT RECOVERY
THE SPECIFICATIONS AND CURVES

ENABLE THE DETERMINATION OF THE trr
AND I

AT 100°C UNDER USERS

RM

CONDITIONS
MOTOR CONTROLS AND CONVERTERS
SWITCH MO DE POWE R SU PP LIES
INSULATED PACKAGE: TO-220AC

Insulating voltage = 2500 V

RMS

DESCRIPTION

Fast recovery rectifiers suited for applications in
combination with superswitch transistors.

A

K

Insulated TO-220AC

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 100° C

Surge non repetitive forward current Tp = 10 ms

tp ≤ 20µs800 V

16 A
10 A

δ

= 0.5

120 A

Sinusoidal

P

T

stg

Tj

August 1999 - Ed: 2B

Power dissipation

tot

Storage temperature range
Maximum operating junction temperature

Tc = 100°C 20 W

- 40 to + 150

°

+ 150

C

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ESM765PI-800

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

Junction to case

3.5 °C/ W

STATIC ELECTRICAL CHARACTE RISTICS

Symbol Parameters Test conditions Min. Typ. Max. Unit

*

I

R

**

V

F

Pulse test : * tp = 5 ms, δ < 2 %

Reverse leakage current Tj = 25°CV

Forward voltage drop Tj = 25°CI

** tp = 380 µs, δ < 2 %

Tj = 100°C

Tj = 100°C

= V

R

= 10 A

F

RRM

20 mA

1mA

1.4 V

1.35

To evaluate the conduction losses use the following equation :
P = 1.2 x I
VF = 1.2 + 0.015 I

+ 0.015 x I

F(AV)

F2(RMS)

F

RECOVERY CHARAC TERISTICS

Symbol Test conditions Min. Typ. Max. Unit

trr T
Qrr T

= 25°CI

j

= 25°CI

j

= 1A dIF/dt = - 15A/µs VR = 30V

F

= 10A dIF/dt = - 50A/µs VR = 200V

F

300 ns

2.3

µ

C

Fig. 1:

Low frequency power losses versus

average current.

2/4

Fig. 2:

Peak current ve r su s f o rm f a ct or.

ESM765PI-800

Fig. 3:

Non repetitive peak surge current versus

overload duration.

Fig. 5:

Voltage drop versus forward current.

Fig. 4:

Thermal impedance versus pulse width.

Fig. 6:

Capacitance versus applied reverse

voltage

Fig. 7:

Recovery charge versus dI

F

/dt.

Fig. 8:

Recovery time versus dI

F

/dt.

3/4

ESM765PI-800

Fig. 9:

Peak reverse current versus dI

PACKAGE MECHANICAL DATA

Insulated TO-220AC

F

/dt.

B

I

L

b2

C

REF.

Millimeters Inches

DIMENSIONS

Min. Max. Min. Max.

A 14.23 15.87 0.560 0.625

F

a1 4.50 0.177
a2 12.70 14.70 0.500 0.579

A

B 10.20 10.45 0.402 0.411

b1 0.64 0.96 0.025 0.038

a1

b2 1.15 1.39 0.045 0.055

C 4.48 4.82 0.176 0.190

c1 0.35 0.65 0.020 0.026

l2

a2

b1

c2 2.10 2.70 0.083 0.106

e 4.58 5.58 0.180 0.220
F 5.85 6.85 0.230 0.270

I 3.55 4.00 0.140 0.157

c1

e

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