Datasheet ESM6045AV Datasheet (SGS Thomson Microelectronics)

NPN DARLINGTON POWER MODULE

■ HIGH CURRENTPOWER BIPOLAR MODULE

■ VERY LOW R

■ SPECIFIEDACCIDENTAL OVERLOAD

AREAS

■ ISOLATEDCASE (2500V RMS)

■ EASY TO MOUNT

■ LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIALAPPLICATIONS:

■ MOTOR CONTROL

■ SMPS & UPS

■ WELDING EQUIPMENT

JUNCTION CASE

th

ESM6045AV

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

CEO(sus)

V

I

I
P
T

V

Collector-Emitter Voltage (VBE= -5 V) 1000 V

CEV

Collector-Emitter Voltage (IB= 0) 450 V
Emitter-Base Voltage (IC=0) 7 V

EBO

Collector Current 72 A

I

C

Collector Peak Current(tp= 10 ms) 108 A

CM

Base Current 8 A

I

B

Base Peak Current (tp=10ms) 16 A

BM

Tota l Dissipat io n at Tc=25oC 250 W

tot

Storage Temperature -55 to 150

stg

Max. OperatingJunctionTemperature 150

T

j

Insulation WithstandVoltage (AC-RMS) 2500

ISO

o

C

o

C

o

C

September1997

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ESM6045AV

THERMAL DATA

R

thj-case

R

thc-h

Thermal Resistance Ju nction-case Max
Thermal Resistance Cas e-heatsinkWith Conductive
Grease Applied Max

0.5

0.05

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

# Collector Cut-off

CER

I

CEV

I

EBO

V

CEO(SUS)

Curren t (R

BE

=5Ω)

# Collector Cut-off

Curren t (V

BE

=-5)

# Emitter Cut-off Current

(I

=0)

C

* Co lle cto r- Emitter

Sustaining Voltage

∗ DC Current Gain IC=60A VCE= 5 V 150

h

FE

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Ba se -Emit ter

BE(sat )

Saturation Voltage

di

/dt RateofRiseof

C

On-state Collector

(3 µs)••Collector-Emitter

V

CE

Dynamic Voltage

(5 µs)•• C o lle c t o r -Emitter

V

CE

Dynamic Voltage
Storage Time

s

Fall Time

t

f

Cross-over Time

c

Maximum Co llect or

V

t
t

CEW

Emitter Voltage
Without Snubber

∗ Pulsed:Pulse duration= 300µs, duty cycle1.5%
# Seetestcircuits in databookintroduction

V

CE=VCEV

VCE=V
V

CE=VCEV

VCE=V

=5V 1 mA

V

EB

IC=0.2A L=25mH
V

= 450 V

clamp

IC=50A IB=1A
I

=50A IB=1A Tj= 100oC

C

I

=60A IB= 2.4 A

C

I

=60A IB=2.4A Tj= 100oC

C

IC=60A IB= 2.4 A
I

=60A IB=2.4A Tj= 100oC

C

VCC=300V RC=0 tp=3µs
I

=3.6A Tj= 100oC

B1

VCC= 300 V RC=5Ω
I

=3.6A Tj= 100oC

B1

VCC= 300 V RC=5Ω
I

=3.6A Tj= 100oC

B1

I

=60A VCC=50V

C

V

=-5V RBB=0.3Ω

BB

V

= 450 V IB1=2.4A

clamp

L = 0.04 mH T
I

=72A IB1=2.4A

CWo f f

V

=-5V VCC=50V

BB

L=35µHR
T

=125oC

j

CEV

CEV

Tj= 100oC

Tj= 100oC

= 100oC

j

=0.3Ω

BB

450 V

1.2

1.6

1.3

1.55

2.1

2.15 3

450 500 A/µs

47V

2.5 4 V

4.6

0.4

1.2

450 V

1.5
22

1

15

2
2

6

0.6

2

mA
mA

mA
mA

V
V
V
V

V
V

µs
µs
µs

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ESM6045AV

Safe OperatingAreas

Derating Curve

Thermal Impedance

Collector-emitter Voltage Versus
base-emitterResistance

CollectorEmitter Saturation Voltage

Base-Emitter SaturationVoltage

3/7

ESM6045AV

ReverseBiased SOA

ReverseBiased AOA

FowardBiased SOA

ForwardBiased AOA

Switching Times Inductive Load

4/7

SwitchingTimes Inductive Load Versus
Temperature

Dc Current Gain Turn-onSwitching Test Circuit

Turn-onSwitching Waveforms

ESM6045AV

Turn-offSwitching Test Circuit Turn-offSwitching Waveforms

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ESM6045AV

ISOTOPMECHANICALDATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503

F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H 4 0.157

J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193

M 37.8 38.2 1.488 1.503
N 4 0.157
O 7.8 8.2 0.307 0.322

mm inch

G

A

B

O

N

D

E

F

H

J

C

K
L

M

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ESM6045AV

Informationfurnished is believed to be accurate andreliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use of such informationnor for any infringementof patents or otherrights of third partieswhich may results from its use.No
license isgrantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in thispublication are subjectto change without notice. This publicationsupersedes and replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin lifesupportdevices orsystems withoutexpress
written approvalof SGS-THOMSONMicroelectonics.

 1997 SGS-THOMSONMicroelectronics - Printed in Italy- All Rights Reserved

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