Datasheet ESM5045DV Datasheet (SGS Thomson Microelectronics)

NPN DARLINGTON POWER MODULE

■ HIGH CURRENTPOWER BIPOLAR MODULE

■ VERY LOW R

■ SPECIFIEDACCIDENTAL OVERLOAD

AREAS

■ ULTRAFASTFREEWHEELING DIODE

■ ISOLATEDCASE (2500V RMS)

■ EASY TO MOUNT

■ LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIALAPPLICATIONS:

■ MOTOR CONTROL

■ SMPS & UPS

■ WELDING EQUIPMENT

JUNCTION CASE

th

ESM5045DV

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

CEO(sus)

V

I

I
P
T

V

Collector-Emitter Voltage (VBE= -5 V) 600 V

CEV

Collector-Emitter Voltage (IB= 0) 450 V
Emitter-Base Voltage (IC=0) 7 V

EBO

Collector Current 60 A

I

C

Collector Peak Current(tp=10ms) 90 A

CM

Base Current 6 A

I

B

Base Peak Current (tp=10ms) 12 A

BM

Tota l Dissipat io n at Tc=25oC 175 W

tot

Storage Temperature -55 to 150

stg

Max. OperatingJunctionTemperature 150

T

j

Insulation WithstandVoltage (AC-RMS) 2500

ISO

o

C

o

C

o

C

September1997

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ESM5045DV

THERMAL DATA

R

thj-case

R

thj-case

R

thc-h

Thermal Resistance Ju nction-case (transistor) Max
Thermal Resistance Ju nction-case (diode) Max
Thermal Resistance Cas e-heatsinkWith Conductive
Grease Applied Max

0.71

1.2

0.05

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

# Collector Cut-off

CER

I

CEV

I

EBO

V

CEO(SUS)

Curren t (R

BE

=5Ω)

# Collector Cut-off

Curren t (V

BE

=-5)

# Emitter Cut-off Current

(I

=0)

C

* Co lle cto r- Emitter

Sustaining Voltage

∗ DC Current Gain IC=50A VCE= 5 V 150

h

FE

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Ba se -Emit ter

BE(sat )

Saturation Voltage

di

/dt RateofRiseof

C

On-state Collector

(3 µs)••Collector-Emitter

V

CE

Dynamic Voltage

(5 µs)•• C o lle c t o r -Emitter

V

CE

Dynamic Voltage
Storage Time

s

Fall Time

t

f

Cross-over Time

c

Maximum Co llect or

V

t
t

CEW

Emitter Voltage
Without Snubber

∗ Diode Forward Voltage IF=50A Tj=100oC1.51.8V

V

F

I

RM

Reverse Recovery
Current

∗ Pulsed:Pulse duration= 300µs, duty cycle1.5%
Toevaluatethe conductionlosses ofthe diodeuse the followingequations:
V

= 1.5+ 0.0055IFP =1.5I

F

# Seetestcircuits in databookintroduction

F(AV)

+ 0.0055I

V

CE=VCEV

VCE=V
V

CE=VCEV

VCE=V

=5V 1 mA

V

EB

IC=0.2A L=25mH
V

= 450 V

clamp

IC=35A IB= 0.7 A
I

=35A IB=0.7A Tj= 100oC

C

I

=50A IB= 2.8 A

C

I

=50A IB=2.8A Tj= 100oC

C

IC=50A IB= 2.8 A
I

=50A IB=2.8A Tj= 100oC

C

VCC=300V RC=0 tp=3µs
I

=1.05A Tj= 100oC

B1

VCC= 300 V RC=8.5Ω
I

=1.05A Tj= 100oC

B1

VCC= 300 V RC=8.5 Ω
I

=1.05A Tj= 100oC

B1

I

= 35A VCC=50V

C

V

=-5V RBB=0.6Ω

BB

V

= 450 V IB1=0.7A

clamp

L = 0.07 mH T
I

=60A IB1=2.8A

CWo f f

V

=-5V VCC=50V

BB

L=42µHR
T

=125oC

j

VCC=200V IF=50A
di

/dt = -300 A/µsL<0.05µH

F

T

=100oC

j

2

F(RMS)

CEV

CEV

Tj= 100oC

Tj= 100oC

= 100oC

j

=0.6Ω

BB

450 V

1.2

1.4

1.4

1.6

2.3

2.3 3

300 400 A/µs

4.5 8 V

2.5 4.5 V

3.2

0.25

0.75

450 V

32 38 A

1.5
20

1

13

2
2

5

0.5

1.5

mA
mA

mA
mA

V
V
V
V

V
V

µs
µs
µs

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ESM5045DV

Safe OperatingAreas

Derating Curve

Thermal Impedance

Collector-emitter Voltage Versus
base-emitterResistance

CollectorEmitter Saturation Voltage

Base-Emitter SaturationVoltage

3/8

ESM5045DV

ReverseBiased SOA

ReverseBiased AOA

FowardBiased SOA

ForwardBiased AOA

Switching Times Inductive Load

4/8

SwitchingTimes Inductive Load Versus
Temperature

ESM5045DV

Dc Current Gain Typical VFVersus I

F

Peak Reverse Current Versus diF/dt Turn-onSwitching Test Circuit

Turn-on Switching Waveforms

5/8

ESM5045DV

Turn-onSwitching Test Circuit Turn-offSwitching Waveforms

Turn-offSwitching Test Circuit of Diode Turn-offSwitching Waveform of Diode

6/8

ISOTOPMECHANICALDATA

ESM5045DV

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003

G 31.5 31.7 1.240 1.248

H 4 0.157

J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193

M 37.8 38.2 1.488 1.503

N 4 0.157

O 7.8 8.2 0.307 0.322

mm inch

G

A

B

O

N

D

E

F

H

J

C

K
L

M

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ESM5045DV

Informationfurnished is believed to be accurate andreliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use of such informationnor for any infringementof patents or otherrights of third partieswhich may results from its use.No
license isgrantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in thispublication are subjectto change without notice. This publicationsupersedes and replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin lifesupportdevices orsystems withoutexpress
written approvalof SGS-THOMSONMicroelectonics.

 1997 SGS-THOMSONMicroelectronics - Printed in Italy- All Rights Reserved

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