Datasheet ESM4045DV Datasheet (SGS Thomson Microelectronics)

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWERBIPOLARMODULE

■ VERYLOW R

■ SPECIFIEDACCIDENTAL OVERLOAD

AREAS

■ ULTRAFASTFREEWHEELING DIODE

■ ISOLATEDCASE (2500VRMS)

■ EASY TOMOUNT

■ LOW INTERNAL PARASITICINDUCTANCE

APPLICATIONS:

■ MOTORCONTROL

■ SMPS& UPS

■ DC/DC &DC/AC CONVERTERS

■ WELDINGEQUIPMENT

JUNCTIONCASE

th

ESM4045DV

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V

V

CEO(sus)

V

I

I
P

T

V

Collector-Emitter Voltage (VBE= -5 V) 600 V

CEV

Collector-Emitter Voltage (IB= 0) 450 V
Emitter-Base Voltage (IC=0) 7 V

EBO

Collect or Current 42 A

I

C

Collect or Peak Current ( tp=10ms) 63 A

CM

Base Current 4 A

I

B

Base Peak Current (tp=10ms) 8 A

BM

Total Dissipat ion at Tc=25oC 150 W

tot

Stora ge T emperat u re -55 to 150

stg

Max. Oper at i ng Junction T emperature 150

T

j

Insul at ion Withst and Voltage (AC-RMS) 2500

ISO

o

C

o

C

o

C

July 1997

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ESM4045DV

THERMAL DATA

R

thj-case

R

thj-case

R

thc-h

Thermal Resistance Junction-cas e (transistor) Max
Thermal Resistance Junction-case (diode) Max
Ther mal Res istance Cas e-hea tsink With Conductiv e
Gr ease Applied Max

0.83

1.5

0.05

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

# Collector Cut-off

CER

I

CEV

I

EBO

V

CEO(SUS)

Current (R

BE

=5Ω)

# Collector Cut-off

Current (V

BE

=-5)

# Emitter Cut-off Current

=0)

(I

C

* Collector-Emitter

Sust aining Volt ag e

∗ DC Current G ain IC=35A VCE= 5 V 220

h

FE

V

∗ Co llector- Emitt er

CE(sat)

Saturation Voltage

V

∗ Base-Emitt er

BE(sat )

Saturation Voltage

di

/dt Rate of Rise of

C

On-stat e Collector

(3 µs) Collector-Emitt er

V

CE

Dynamic Voltage

V

(5 µ s) Collect or- E mitt er

CE

Dynamic Voltage
St orage Time

s

t

Fall Time

f

Cross-over Time

c

Maximum Collector

V

t
t

CEW

Emit ter Voltage
Wit hout S nubber

V

∗ Diode For ward V oltage IF=35A Tj= 100oC1.51.85V

F

I

RM

Reverse Recovery
Current

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

To evaluate the conduction losses of the diode use the following equations:

= 1.5 + 0.001 IFP = 1.5 I

V

F

# See test circuits in databook introduction

F(AV)

+ 0.001 I

V

CE=VCEV

VCE=V
V

CE=VCEV

VCE=V
V

=5V 1 mA

EB

CEV

CEV

Tj=100oC

Tj=100oC

IC=0.2A L=25mH

= 450 V

V

clamp

IC=25A IB=0.5A
I

=25A IB=0.5A Tj=100oC

C

=35A IB=2A

I

C

I

=35A IB=2A Tj=100oC

C

IC=35A IB=2A

=35A IB=2A Tj= 100oC

I

C

VCC=300V RC=0 tp=3µs

=0.75A Tj=100oC

I

B1

VCC=300V RC=12Ω

=0.75A Tj=100oC

I

B1

VCC=300V RC=12Ω

=0.75A Tj=100oC

I

B1

IC=25A VCC=50V

=-5V RBB=0.6Ω

V

BB

V

= 450 V IB1= 0.5 A

clamp

L=0.1mH T
I

=42A IB1=2A

CWo f f

=-5V VCC=50V

V

BB

L = 0.06 mH R

= 125oC

T

j

=100oC

j

=0.6Ω

BB

VCC=200V IF=35A
di

/dt = -200 A/µ sL<0.05µH

F

= 100oC

T

j

2

F(RMS)

1.5
20

1

13

mA
mA

mA
mA

450 V

1.15

1.3

1.4

1.5

2.3

2.3 3

2
2

V
V
V
V

V
V

200 250 A/µ s

4.5 8 V

2.5 4.5 V

3.2

0.25

0.75

5

0.5

1.5

µs
µs
µs

450 V

20 24 A

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ESM4045DV

Safe OperatingAreas

Derating Curve

ThermalImpedance

Collector-emitter VoltageVersus
base-emitterResistance

CollectorEmitter SaturationVoltage

Base-EmitterSaturationVoltage

3/8

ESM4045DV

ReverseBiased SOA

ReverseBiased AOA

FowardBiased SOA

ForwardBiased AOA

SwitchingTimes InductiveLoad

4/8

SwitchingTimes InductiveLoad Versus
Temperature

ESM4045DV

Dc Current Gain TypicalV

VersusI

F

F

Peak Reverse Current Versus diF/dt Turn-onSwitching TestCircuit

Turn-onSwitching Waveforms

5/8

ESM4045DV

Turn-onSwitching Test Circuit Turn-off Switching Waveforms

Turn-offSwitching TestCircuit ofDiode Turn-off Switching Waveformof Diode

6/8

ISOTOPMECHANICAL DATA

ESM4045DV

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 11.8 12.2 0.466 0.480

B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003
G 31.5 31.7 1.240 1.248
H 4 0.157

J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594

L 30.1 30.3 1.185 1.193

M 37.8 38.2 1.488 1.503

N 4 0.157
O 7.8 8.2 0.307 0.322

mm inch

G

A

B

O

N

D

E

F

H

J

C

K
L

M

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ESM4045DV

Informationfurnished isbelieved to beaccurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof useof such information nor for any infringementof patents or other rights of third parties which may results fromits use.No
license is grantedby implication or otherwiseunderanypatentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject to change withoutnotice. This publicationsupersedes and replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor use ascritical componentsinlifesupportdevices or systemswithout express
written approvalof SGS-THOMSONMicroelectonics.

 1997 SGS-THOMSONMicroelectronics -Printed in Italy- All Rights Reserved

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