Datasheet ESM3045DV Datasheet (SGS Thomson Microelectronics)

NPN DARLINGTON POWER MODULE

■ HIGH CURRENTPOWER BIPOLAR MODULE

■ VERY LOW R

■ SPECIFIEDACCIDENTAL OVERLOAD

AREAS

■ ULTRAFASTFREEWHEELING DIODE

■ ISOLATEDCASE (2500V RMS)

■ EASY TO MOUNT

■ LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIALAPPLICATIONS:

■ MOTOR CONTROL

■ SMPS & UPS

■ DC/DC & DC/AC CONVERTERS

■ WELDING EQUIPMENT

JUNCTION CASE

th

ESM3045DV

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

CEO(sus)

V

I

I
P
T

V

Collector-Emitter Voltage (VBE= -5 V) 600 V

CEV

Collector-Emitter Voltage (IB= 0) 450 V
Emitter-Base Voltage (IC=0) 7 V

EBO

Collector Current 24 A

I

C

Collector Peak Current(tp=10ms) 36 A

CM

Base Current 2.5 A

I

B

Base Peak Current (tp=10ms) 5 A

BM

Tota l Dissipat io n at Tc=25oC 125 W

tot

Storage Temperature -55 to 150

stg

Max. OperatingJunctionTemperature 150

T

j

Insulation WithstandVoltage (AC-RMS) 2500

ISO

o

C

o

C

o

C

September1997

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ESM3045DV

THERMAL DATA

R

thj-case

R

thj-case

R

thc-h

Thermal Resistance Ju nction-case (transistor) Max
Thermal Resistance Ju nction-case (diode) Max
Thermal Resistance Cas e-heatsinkWith Conductive
Grease Applied Max

1
2

0.05

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

# Collector Cut-off

CER

I

CEV

I

EBO

V

CEO(SUS)

Curren t (R

BE

=5Ω)

# Collector Cut-off

Curren t (V

BE

=-5)

# Emitter Cut-off Current

(I

=0)

C

* Co lle ctor- Em it t e r

Sustaining Voltage

∗ DC Current Gain IC=20A VCE= 5 V 120

h

FE

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Ba se -Emit ter

BE(sat)

Saturation Voltage

di

/dt RateofRiseof

C

On-state Collector

(3 µs)••Collector-Emitter

V

CE

Dynamic Voltage

(5 µs)•• C o lle c t o r -Emitte r

V

CE

Dynamic Voltage
Storage Time

s

Fall Time

t

f

Cross-over Time

c

Maximum Co lle ctor

V

t
t

CEW

Emitter Voltage
Without Snubber

∗ Diode Forward Voltage IF=20A Tj=100oC1.72V

V

F

I

RM

Reverse Recovery
Current

∗ Pulsed:Pulseduration = 300 µs,duty cycle 1.5 %
# Seetest circuits in databookintroduction
Toevaluatethe conductionlosses of the diode usethe followingequations:
V

= 1.47+ 0.0026 IFP = 1.47I

F

F(AV)

+ 0.0026I

V

CE=VCEV

VCE=V
V

CE=VCEV

VCE=V

=5V 1 mA

V

EB

IC=0.2A L=25mH
V

= 450 V

clamp

IC=15A IB= 0.3 A
I

=15A IB=0.3A Tj= 100oC

C

I

=20A IB= 1.2 A

C

I

=20A IB=1.2A Tj= 100oC

C

IC=20A IB= 1.2 A
I

=20A IB=1.2A Tj= 100oC

C

VCC=300V RC=0 tp=3µs
I

=0.45A Tj= 100oC

B1

VCC= 300 V RC=20Ω
I

=0.45A Tj= 100oC

B1

VCC= 300 V RC=20Ω
I

=0.45A Tj= 100oC

B1

I

=15A VCC=50V

C

V

=-5V RBB=0.6Ω

BB

V

= 450 V IB1=0.3A

clamp

L = 0.17 mH T
I

=24A IB1=1.2A

CWo f f

V

=-5V VCC=50V

BB

L=0.1mH R
T

=125oC

j

VCC=200V IF=20A
di

/dt = -125 A/µsL<0.05µH

F

T

=100oC

j

2

F(RMS)

CEV

CEV

Tj= 100oC

Tj= 100oC

= 100oC

j

=0.6Ω

BB

450 V

1.2

1.3

1.4

1.6

2.1

2.1 3

125 160 A/µs

4.5 8 V

2.5 4.5 V

2.1

0.15

0.5

450 V

11 14 A

1.5
17

1

12

2
2

4

0.4

1.2

mA
mA

mA
mA

V
V
V
V

V
V

µs
µs
µs

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ESM3045DV

Safe OperatingAreas

Derating Curve

Thermal Impedance

Collector-emitter Voltage Versus
base-emitterResistance

CollectorEmitter Saturation Voltage

Base-Emitter SaturationVoltage

3/8

ESM3045DV

ReverseBiased SOA

ReverseBiased AOA

FowardBiased SOA

ForwardBiased AOA

Switching Times Inductive Load

4/8

SwitchingTimes Inductive Load Versus
Temperature

ESM3045DV

Dc Current Gain Typical VFVersus I

F

Peak Reverse Current Versus diF/dt Turn-onSwitching Test Circuit

Turn-on Switching Waveforms

5/8

ESM3045DV

Turn-onSwitching Test Circuit Turn-offSwitching Waveforms

Turn-offSwitching Test Circuit of Diode Turn-offSwitching Waveform of Diode

6/8

ISOTOPMECHANICALDATA

ESM3045DV

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003

G 31.5 31.7 1.240 1.248

H 4 0.157

J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193

M 37.8 38.2 1.488 1.503

N 4 0.157

O 7.8 8.2 0.307 0.322

mm inch

G

A

B

O

N

D

E

F

H

J

C

K
L

M

7/8

ESM3045DV

Informationfurnished is believed to be accurateand reliable. However, SGS-THOMSON Microelectronicsassumes no responsabilityfor the
consequencesof use of such information nor for any infringementof patents or other rightsof third partieswhich may results from its use. No
license is grantedby implicationor otherwiseunder any patentor patentrights of SGS-THOMSON Microelectronics.Specificationsmentioned
in thispublication are subjectto change withoutnotice. This publicationsupersedesand replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsarenot authorizedforuseas critical componentsin lifesupportdevices or systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.

 1997 SGS-THOMSONMicroelectronics - Printed in Italy - All Rights Reserved

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