Datasheet ESM2030DV Datasheet (SGS Thomson Microelectronics)

NPN DARLINGTON POWER MODULE

■ HIGH CURRENTPOWER BIPOLAR MODULE

■ VERY LOW R

■ SPECIFIEDACCIDENTAL OVERLOAD

AREAS

■ ULTRAFASTFREEWHEELING DIODE

■ ISOLATEDCASE (2500V RMS)

■ EASY TO MOUNT

■ LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIALAPPLICATIONS:

■ MOTOR CONTROL

■ UPS

■ DC/DC & DC/AC CONVERTERS

JUNCTION CASE

th

ESM2030DV

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

CEO(sus)

V

I

I
P
T

V

Collector-Emitter Voltage (VBE= -5 V) 400 V

CEV

Collector-Emitter Voltage (IB= 0) 300 V
Emitter-Base Voltage (IC=0) 7 V

EBO

Collector Current 67 A

I

C

Collector Peak Current(tp= 10 ms) 100 A

CM

Base Current 3 A

I

B

Base Peak Current (tp=10ms) 6 A

BM

Tota l Dissipat io n at Tc=25oC 150 W

tot

Storage Temperature -55 to 150

stg

Max. OperatingJunctionTemperature 150

T

j

Insulation WithstandVoltage (AC-RMS) 2500

ISO

o

C

o

C

o

C

September1997

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ESM2030DV

THERMAL DATA

R

thj-case

R

thj-case

R

thc-h

Thermal Resistance Ju nction-case (transistor) Max
Thermal Resistance Ju nction-case (diode) Max
Thermal Resistance Cas e-heatsinkWith Conductive
Grease Applied Max

0.83

1.2

0.05

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

# Collector Cut-off

CER

I

CEV

I

EBO

V

CEO(SUS)

Curren t (R

BE

=5Ω)

# Collector Cut-off

Curren t (V

BE

=-5V)

# Emitter Cut-off Current

(I

=0)

C

* Co lle cto r- Emitter

Sustaining Voltage

∗ DC Current Gain IC=56A VCE= 5 V 300

h

FE

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Ba se -Emit ter

BE(sat )

Saturation Voltage

di

/dt RateofRiseof

C

On-state Collector

(3 µs)••Collector-Emitter

V

CE

Dynamic Voltage

(5 µs)•• C o lle c t o r -Emitter

V

CE

Dynamic Voltage
Storage Time

s

Fall Time

t

f

Cross-over Time

c

Maximum Co llect or

V

t
t

CEW

Emitter Voltage
Without Snubber

∗ Diode Forward Voltage IF=56A Tj=100oC1.151.6V

V

F

I

RM

Reverse Recovery
Current

∗ Pulsed:Pulse duration= 300µs, duty cycle1.5%
# Seetestcircuit in databookintroduction
Toevaluatethe conductionlosses ofthe diodeuse the followingequations:
V

= 1.1+ 0.0045IFP =1.1I

F

F(AV)

+ 0.0045I

V

CE=VCEV

VCE=V
V

CE=VCEV

VCE=V

=5V 1 mA

V

EB

IC=0.2A L=25mH
V

= 300 V

clamp

IC=40A IB= 0.4 A
I

=40A IB=0.4A Tj= 100oC

C

I

=56A IB= 1.6 A

C

I

=56A IB=1.6A Tj= 100oC

C

IC=56A IB= 1.6 A
I

=56A IB=1.6A Tj= 100oC

C

VCC=300V RC=0 tp=3µs
I

=0.6A Tj= 100oC

B1

VCC= 300 V RC=7.5Ω
I

=0.6A Tj= 100oC

B1

VCC= 300 V RC=7.5 Ω
I

=0.6A Tj= 100oC

B1

I

=40A VCC=50V

C

V

=-5V RBB=0.6 Ω

BB

V

= 300 V IB1=0.4A

clamp

L = 0.06 mH T
I

=67A IB1=1.6A

CWo f f

V

=-5V VCC=50V

BB

L=0.037mH R
T

=125oC

j

VCC=200V IF=56A
di

/dt = -220 A/µsL<0.05µH

F

T

=100oC

j

2

F(RMS)

CEV

CEV

Tj= 100oC

Tj= 100oC

= 100oC

j

=0.6Ω

BB

300 V

1.25

1.4

1.5

1.8

2.4

2.5 3

220 260 A/µs

36V

2.2 4 V

2

0.35

0.8

300 V

12 17 A

1.5
16

1

11

1.8

2.2

3

0.6

1.2

mA
mA

mA
mA

V
V
V
V

V
V

µs
µs
µs

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ESM2030DV

Safe OperatingAreas

Derating Curve

Thermal Impedance

Collector-emitter Voltage Versus
base-emitterResistance

CollectorEmitter Saturation Voltage

Base-Emitter SaturationVoltage

3/8

ESM2030DV

ReverseBiased SOA

ReverseBiased AOA

FowardBiased SOA

ForwardBiased AOA

Switching Times Inductive Load

4/8

SwitchingTimes Inductive Load Versus
Temperature

ESM2030DV

Dc Current Gain Typical VFVersus I

F

Peak Reverse Current Versus diF/dt Turn-onSwitching Test Circuit

Turn-on Switching Waveforms

5/8

ESM2030DV

Turn-onSwitching Test Circuit Turn-offSwitching Waveforms

Turn-offSwitching Test Circuit of Diode Turn-offSwitching Waveform of Diode

6/8

ISOTOPMECHANICALDATA

ESM2030DV

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 11.8 12.2 0.466 0.480
B 8.9 9.1 0.350 0.358
C 1.95 2.05 0.076 0.080
D 0.75 0.85 0.029 0.033
E 12.6 12.8 0.496 0.503
F 25.15 25.5 0.990 1.003

G 31.5 31.7 1.240 1.248

H 4 0.157

J 4.1 4.3 0.161 0.169
K 14.9 15.1 0.586 0.594
L 30.1 30.3 1.185 1.193

M 37.8 38.2 1.488 1.503

N 4 0.157

O 7.8 8.2 0.307 0.322

mm inch

G

A

B

O

N

D

E

F

H

J

C

K
L

M

7/8

ESM2030DV

Informationfurnished is believed to be accurate andreliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use of such informationnor for any infringementof patents or otherrights of third partieswhich may results from its use.No
license isgrantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in thispublication are subjectto change without notice. This publicationsupersedes and replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin lifesupportdevices orsystems withoutexpress
written approvalof SGS-THOMSONMicroelectonics.

 1997 SGS-THOMSONMicroelectronics - Printed in Italy- All Rights Reserved

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