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CREAT BY ART
Surface Mount Ultra Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Ultra fast recovery time for high efficiency
- Moisture sensitivity: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case：DO-214AB(SMC)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
ESH3B thru ESH3D
Taiwan Semiconductor
DO-214AB(SMC)
Terminal：Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity：Indicated by cathode band
Weight：0.2 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T
=25℃ unless otherwise noted)
A
PARAMETER SYMBOL ESH3B ESH3C ESH3D UNIT
Maximum repetitive peak reverse voltage 100 150 200
Maximum RMS voltage 70 105 140
Maximum DC blocking voltage 100 150 200
Maximum average forward rectified current 3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 3 A
Maximum reverse current @ rated VR T
T
=25 ℃
J
=125 ℃
J
Maximum reverse recovery time (Note 2) 20
Typical junction capacitance (Note 3) 45
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
125 A
0.90 V
5
I
R
150
Trr nS
Cj pF
V
V
V
A
uA
R
Typical thermal resistance
Operating junction temperature range - 55 to + 175
Storage temperature range - 55 to + 175
θJL
R
θJA
T
J
T
STG
12
47
Note 1：Pulse test with PW=300u sec, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
=0.5A, IR=1.0A, IRR=0.25A
F
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number：DS_D1309021
O
Version:E13
C/W
O
C
O
C
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ORDERING INFORMATION
ESH3B thru ESH3D
Taiwan Semiconductor
PART NO.
PACKING CODE GREEN COMPOUND
PACKAGE PACKING
CODE
ESH3x
(Note 1)
R7
R6 SMC 3000 / 13" Paper reel
Suffix "G"
M6
SMC 850 / 7" Plastic reel
SMC 3000 / 13" Plastic reel
Note 1: "x" defines voltage from 100V (ESH3B) to 200V (ESH3D)
EXAMPLE
PREFERRED P/N PACKING CODE
ESH3D R7 R7
ESH3D R7G R7 G Green compound
PART NO.
ESH3D
ESH3D
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
3.5
FIG.1 FORWARD CURRENT DERATING CURVE
10
3
2.5
2
1.5
1
0.5
AVERAGE FORWARD CURRENT (A)
0
125
100
RESISTER OR
INDUCTIVE LOAD
0 25 50 75 100 125 150 175
LEAD TEMPERATURE (oC)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3mS Single Half Sine Wave
JEDEC Method
INSTANTANEOUS FORWARD CURRENT (A)
1
Pulse Width=300us
1% Duty Cycle
0.1
0.4 0.6 0.8 1 1.2
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
1000
TJ=125℃
100
75
50
25
PEAK FORWARD SURGE CURRENT (A)
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
Document Number：DS_D1309021
TJ=75℃
10
1
INSTANTANEOUS REVERSE CURRENT (uA)
0.1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
TJ=25℃
Version:E13
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FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
75
50
25
CAPACITANCE (pF)
f=1.0MHz
Vsig=50mVp-p
0
0.1 1 10 100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
ESH3B thru ESH3D
Taiwan Semiconductor
SUGGESTED PAD LA YOUT
DIM.
A 2.90 3.20 0.114 0.126
B 6.60 7.11 0.260 0.280
C 5.59 6.22 0.220 0.245
D 2.00 2.62 0.079 0.103
E 1.00 1.60 0.039 0.063
F 7.75 8.13 0.305 0.320
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
Unit(mm) Unit(inch)
Min Max Min Max
MARKING DIAGRAM
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number：DS_D1309021
Symbol Unit(mm)
A3.3
B2.5
C6.8
D4.4
E9.4
Version:E13
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