Datasheet ESDALC6V1xxM6 Datasheet (ST)

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ESDALC6V1xxM6

4 and 5 line low capacitance TRANSIL™ array for ESD protection

Main applications
Computers
Printers
Communication systems
Cellular phone handsets and accessories
Video equipment
Features
4 unidirectional TRANSIL diodes
(ESDALC6V1M6)
5 unidirectional TRANSIL diodes
(ESDALC6V1-5M6)
Breakdown Voltage V
Low diode capacitance (12 pF typ at 0 V)
Low leakage current < 70 nA
Very small PCB area: 1.45 mm
500 microns pitch
Leadfree package
= 6.1 V min
BR
²
Functional diagram
Micro QFN Package
ESDALC6V1M6
1
I/O1
2
GND
I/O2
3
ESDALC6V1-5M6
1
I/O1
2
GND
I/O2
3
6
5
4
6
5
4
I/O5
GND
I/O3
I/O5
I/O4
I/O3
Description
The ESDALC6V1xxM6 is monolithic arrays designed to protect up to 4 or 5 lines against ESD transients.
The device is ideal for applications where both reduced print circuit board space and power absorption capability are required.
Benefits
High ESD protection level
High integration
Suitable for high density boards
January 2006 1/8
Order Code
Part number Marking
ESDALC6V1M6 G
ESDALC6V1-5M6 H
Complies with the following standards:
IEC61000-4-2
15 kV (air discharge)
8 kV (contact discharge)
MIL STD 883E- Method 3015-7: class3
25 kV (human body model)
TM: TRANSIL is a trademark of STMicroelectronics
Rev 3
www.st.com
8
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1 Characteristics ESDALC6V1xxM6

1 Characteristics

1.1 Absolute maximum ratings (T
Symbol Parameter Value Unit
V
PP
P
PP
I
pp
T
T
stg
T
L
T
OP
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
1.2 Electrical characteristics (T
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
αT Voltage temperature coefficient
V
F
ESD discharge – IEC61000-4-2 air discharge IEC61000-4-2 contact discharge
Peak pulse power dissipation (8/20 µs)
Repetitive peak pulse current typical value (8/20 µs) 3 A
Junction temperature 125 °C
j
Storage temperature range -55 + 150 °C
Maximum lead temperature for soldering during 10 s 260 °C
Operating temperature range -40 + 125 °C
amb
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
Peak pulse current
Forward voltage drop
RM
= 25 °C)
amb
(1)
= 25 °C)
Tj initial = T
VV V
BR
RM
Slope= 1/R
± 15
± 8
V
F
30 W
V
V
VVCLV
V
amb
I
I
F
I
RM
I
R
d
I
PP
kV
Parameter Test Condition Min Typ Max Unit
V
BR
I
RM
V
F
R
d
(1)
αT
C
1. ∆VBR = αT * (T
V
=0 V DC, F = 1 MHz, V
R
- 25 °C) * VBR (25 °C)
amb
IR = 1 mA
V
= 3 V
RM
IF = 10 mA
IR = 1 mA,
osc
2/8
= 30 mV
RMS
6.1 7.2 V
70 nA
1V
23
5
10
12 15 pF
-4
/°C
Page 3
ESDALC6V1xxM6 1 Characteristics
Figure 1. Relative variation of peak pulse
power versus initial junction temperature
PPP[Tjinitial] /PPP[Tjinitial=25 ]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150
°C
Tj(°C)
Figure 3. Clamping voltage versus peak pulse
current (typical values, rectangular waveform)
IPP(A)
IPP(A)
100.0
100.0
8/20µs
8/20µs
initial =25°C
initial =25°C
T
T
j
j
Figure 2. Peak pulse power versus
exponential pulse duration
PPP(W)
PPP(W)
1000
1000
100
100
10
10
1 10 100
1 10 100
tP(µs)tP(µs)
Tjinitial = 25°C
Tjinitial = 25°C
Figure 4. Forward voltage drop versus peak
forward current (typical values)
IFM(A)
1.E+00
10.0
10.0
1.0
1.0
0.1
0.1
0 10203040506070
0 10203040506070
VCL(V)VCL(V)
Figure 5. Junction capacitance vesus reverse
voltage applied (typical values)
C(pF)C(pF)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VR(V)VR(V)
V
F=1MHz
OSC
Tj=25°C
=30mV
RMS
1.E-01
1.E-02
1.E-03
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Tj=125°C
Tj=25°C
VFM(V)
Figure 6. Relative variation of leakage current
versus junction temperature (typical values)
IR[Tj]/IR[Tj=25 ]
100
10
1
25 50 75 100 125
°C
VR=3V
Tj(°C)
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Page 4
1 Characteristics ESDALC6V1xxM6
Figure 7. S21 attenuation measurement
results of each channel
dB
0.00
-10.00
-20.00
-30.00
f/Hz
-40.00
100.0k 1.0M 10.0M 100.0M 1.0G
Figure 9. ESD response to IEC6100-4-2
(+15 kV air discharge) on each channel
36V
Figure 8. Analog crosstalk measurements
between channels
dB
0.00
-30.00
-60.00
-90.00
f/Hz
-120.00
100.0k 1.0M 10.0M 100.0M 1.0G
Figure 10. ESD response to IEC6100-4-2
(-15 kV air discharge) on each channel
-34V-34V
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Page 5

ESDALC6V1xxM6 2 Ordering information scheme

2 Ordering information scheme
ESDA LC 6V1 xx M6
ESD Array
Low capacitance
Breakdown voltage
6V1 = 6.1 Volts min
Number of lines
blank = 4 line
-5 = 5 line protection
Package
M6 = Micro QFN 6 leads

3 Package information

Table 1. Mechanical data

D
112
A
A1
2
b
e
L
k
DIMENSIONS
REF
E
A 0.50 0.55 0.60 0.20 0.22 0.24
A1 0.00 0.02 0.05 0.00 0.01 0.02
b 0.19 0.25 0.30 0.07 0.10 0.12
D 1.34 1.45 1.51 0.53 0.57 0.59
E 0.94 1.00 1.05 0.37 0.39 0.41
e 0.45 0.50 0.55 0.18 0.20 0.22
L 0.30 0.35 0.40 0.12 0.14 0.16
Millimeters Inches
Min Typ Max Min Typ Max
k 0.25 0.30 0.35 0.10 0.12 0.14
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3 Package information ESDALC6V1xxM6

Figure 11. Footprint

0.50
0.25

Figure 12. Tape and reel specification

Dot identifying Pin A1 location
Dot identifying Pin A1 location
0.65
0.30
2.0+/-0.05
2.0+/-0.05
1.60
4.00+/-0.1
4.00+/-0.1
Measurements in mm
φ 1.5 +/- 0.1
φ 1.5 +/- 0.1
1.75 +/- 0.1
1.75 +/- 0.1
3.5 +/- 0.03
3.5 +/- 0.03
8.0 +/- 0.3
8.0 +/- 0.3
1.65
1.65
0.75
0.75
X: Marking
X: Marking
X
XX
1.20
1.20
User direction of unreeling
User direction of unreeling
X
X
4.00
4.00
X
XX
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
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ESDALC6V1xxM6 4 Ordering information

4 Ordering information

Part number Marking Package Weight Base qty Delivery mode
ESDALC6V1M6 G Micro QFN 2.2 mg 30,000 Tape and reel
ESDALC6V1-5M6 H Micro QFN 2.2 mg 30,000 Tape and reel

5 Revision history

Date Revision Changes
19-Sep-2005 1 Initial release.
10-Oct-2005 2 Package title changed from DFN to QFN. No technical changes.
21-Dec-2005 3 Updated package dimensions in Table 1
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5 Revision history ESDALC6V1xxM6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2006 STMicroelectronics - All rights reserved
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