4 and 5 line low capacitance TRANSIL™ array for ESD protection
Main applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
■ Computers
■ Printers
■ Communication systems
■ Cellular phone handsets and accessories
■ Video equipment
Features
■ 4 unidirectional TRANSIL diodes
(ESDALC6V1M6)
■ 5 unidirectional TRANSIL diodes
(ESDALC6V1-5M6)
■ Breakdown Voltage V
■ Low diode capacitance (12 pF typ at 0 V)
■ Low leakage current < 70 nA
■ Very small PCB area: 1.45 mm
■
500 microns pitch
■ Leadfree package
= 6.1 V min
BR
²
Functional diagram
Micro QFN Package
ESDALC6V1M6
1
I/O1
2
GND
I/O2
3
ESDALC6V1-5M6
1
I/O1
2
GND
I/O2
3
6
5
4
6
5
4
I/O5
GND
I/O3
I/O5
I/O4
I/O3
Description
The ESDALC6V1xxM6 is monolithic arrays
designed to protect up to 4 or 5 lines against ESD
transients.
The device is ideal for applications where both
reduced print circuit board space and power
absorption capability are required.
Benefits
■ High ESD protection level
■ High integration
■ Suitable for high density boards
January 20061/8
Order Code
Part numberMarking
ESDALC6V1M6G
ESDALC6V1-5M6H
Complies with the following standards:
IEC61000-4-2
15 kV(air discharge)
8 kV(contact discharge)
MIL STD 883E- Method 3015-7: class3
25 kV(human body model)
TM: TRANSIL is a trademark of STMicroelectronics
Rev 3
www.st.com
8
Page 2
1 CharacteristicsESDALC6V1xxM6
1 Characteristics
1.1 Absolute maximum ratings (T
SymbolParameterValueUnit
V
PP
P
PP
I
pp
T
T
stg
T
L
T
OP
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
1.2 Electrical characteristics (T
SymbolParameter
V
RM
V
BR
V
CL
I
RM
I
PP
αT Voltage temperature coefficient
V
F
ESD discharge – IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
Peak pulse power dissipation (8/20 µs)
Repetitive peak pulse current typical value (8/20 µs)3A
Junction temperature125°C
j
Storage temperature range-55 + 150°C
Maximum lead temperature for soldering during 10 s260°C
Operating temperature range-40 + 125°C
amb
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
Peak pulse current
Forward voltage drop
RM
= 25 °C)
amb
(1)
= 25 °C)
Tj initial = T
VV V
BR
RM
Slope= 1/R
± 15
± 8
V
F
30W
V
V
VVCLV
V
amb
I
I
F
I
RM
I
R
d
I
PP
kV
ParameterTest ConditionMinTypMaxUnit
V
BR
I
RM
V
F
R
d
(1)
αT
C
1. ∆VBR = αT * (T
V
=0 V DC, F = 1 MHz, V
R
- 25 °C) * VBR (25 °C)
amb
IR = 1 mA
V
= 3 V
RM
IF = 10 mA
IR = 1 mA,
osc
2/8
= 30 mV
RMS
6.17.2V
70nA
1V
23 Ω
5
10
1215pF
-4
/°C
Page 3
ESDALC6V1xxM61 Characteristics
Figure 1.Relative variation of peak pulse
power versus initial junction
temperature
PPP[Tjinitial] /PPP[Tjinitial=25 ]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0255075100125150
°C
Tj(°C)
Figure 3.Clamping voltage versus peak pulse
current (typical values, rectangular
waveform)
IPP(A)
IPP(A)
100.0
100.0
8/20µs
8/20µs
initial =25°C
initial =25°C
T
T
j
j
Figure 2.Peak pulse power versus
exponential pulse duration
PPP(W)
PPP(W)
1000
1000
100
100
10
10
110100
110100
tP(µs)tP(µs)
Tjinitial = 25°C
Tjinitial = 25°C
Figure 4.Forward voltage drop versus peak
forward current (typical values)
IFM(A)
1.E+00
10.0
10.0
1.0
1.0
0.1
0.1
0 10203040506070
0 10203040506070
VCL(V)VCL(V)
Figure 5.Junction capacitance vesus reverse
voltage applied (typical values)
C(pF)C(pF)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0.00.51.01.52.02.53.03.54.04.55.0
VR(V)VR(V)
V
F=1MHz
OSC
Tj=25°C
=30mV
RMS
1.E-01
1.E-02
1.E-03
0.00.20.40.60.81.01.21.41.61.82.0
Tj=125°C
Tj=25°C
VFM(V)
Figure 6.Relative variation of leakage current
versus junction temperature (typical
values)
IR[Tj]/IR[Tj=25 ]
100
10
1
255075100125
°C
VR=3V
Tj(°C)
3/8
Page 4
1 CharacteristicsESDALC6V1xxM6
Figure 7.S21 attenuation measurement
results of each channel
dB
0.00
-10.00
-20.00
-30.00
f/Hz
-40.00
100.0k1.0M10.0M100.0M1.0G
Figure 9.ESD response to IEC6100-4-2
(+15 kV air discharge) on each
channel
36V
Figure 8.Analog crosstalk measurements
between channels
dB
0.00
-30.00
-60.00
-90.00
f/Hz
-120.00
100.0k1.0M10.0M100.0M1.0G
Figure 10. ESD response to IEC6100-4-2
(-15 kV air discharge) on each
channel
-34V-34V
4/8
Page 5
ESDALC6V1xxM62 Ordering information scheme
2 Ordering information scheme
ESDA LC 6V1 xx M6
ESD Array
Low capacitance
Breakdown voltage
6V1 = 6.1 Volts min
Number of lines
blank = 4 line
-5 = 5 line protection
Package
M6 = Micro QFN 6 leads
3 Package information
Table 1.Mechanical data
D
112
A
A1
2
b
e
L
k
DIMENSIONS
REF
E
A0.50 0.55 0.600.200.220.24
A10.00 0.02 0.050.000.010.02
b0.19 0.25 0.300.070.100.12
D1.34 1.45 1.510.530.570.59
E0.94 1.00 1.050.370.390.41
e0.45 0.50 0.550.180.200.22
L0.30 0.35 0.400.120.140.16
MillimetersInches
Min TypMaxMinTypMax
k0.25 0.30 0.350.100.120.14
5/8
Page 6
3 Package informationESDALC6V1xxM6
Figure 11. Footprint
0.50
0.25
Figure 12. Tape and reel specification
Dot identifying Pin A1 location
Dot identifying Pin A1 location
0.65
0.30
2.0+/-0.05
2.0+/-0.05
1.60
4.00+/-0.1
4.00+/-0.1
Measurements in mm
φ 1.5 +/- 0.1
φ 1.5 +/- 0.1
1.75 +/- 0.1
1.75 +/- 0.1
3.5 +/- 0.03
3.5 +/- 0.03
8.0 +/- 0.3
8.0 +/- 0.3
1.65
1.65
0.75
0.75
X: Marking
X: Marking
X
XX
1.20
1.20
User direction of unreeling
User direction of unreeling
X
X
4.00
4.00
X
XX
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com.
6/8
Page 7
ESDALC6V1xxM64 Ordering information
4 Ordering information
Part numberMarkingPackageWeightBase qtyDelivery mode
ESDALC6V1M6GMicro QFN2.2 mg30,000Tape and reel
ESDALC6V1-5M6HMicro QFN2.2 mg30,000Tape and reel
5 Revision history
DateRevisionChanges
19-Sep-20051Initial release.
10-Oct-20052Package title changed from DFN to QFN. No technical changes.
21-Dec-20053Updated package dimensions in Table 1
7/8
Page 8
5 Revision historyESDALC6V1xxM6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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